263 results about "Inorganic fluorine compounds" patented technology

Techniques for forming shallow junctions are disclosed. In one particular exemplary embodiment, the techniques may be realized as a method for forming shallow junctions. The method may comprise generating an ion beam comprising molecular ions based on one or more materials selected from a group consisting of: digermane (Ge₂H₆), germanium nitride (Ge₃N₄), germanium-fluorine compounds (GF_n, wherein n=1, 2, or 3), and other germanium-containing compounds. The method may also comprise causing the ion beam to impact a semiconductor wafer.

Disclosed is a surface treating agent for metallic materials that has various properties such as corrosion resistance and overcoating properties and, when used in coating-type surface treatment, particularly can form a film , which has excellent adhesion to the surface of metallic materials, and can fix, within the film, a component capable of functioning as a corrosion inhibitor for metallic materials. The surface treating agent for metallic materials comprises a silicic acid compound (A), an organoalkoxysilane (B), a metallic compound (C) containing at least one metal element selected from the group consisting of Zr, Ti, Co, Fe, V, Ce, Mo, Mn, Mg, Al, Ni, Ca, W, Nb, Cr, and Zn, at least one compound (D) selected from the group consisting of phosphoric acid compounds and fluoro compounds, water (E), and an alcohol (F) produced upon hydrolysis of the organoalkoxysilan (B). The molar concentration (mol/L) of the alcohol (F) in the treating agent has been regulated in a predetermined range.

A magnet comprising grains of a ferromagnetic material whose main component is iron and a fluorine compound layer or an oxy-fluorine compound layer of fluoride compound particles of alkali metals, alkaline earth metals and rare earth elements, present on the surface of the ferromagnetic material grains, wherein an amount of iron atoms in the fluorine compound particles is 1 to 50 atomic %.

The invention relates to a method utilizing waste gas containing fluoride in fertilizer production or fluorine-containing gas or sodium fluorosilicate in fluorine chemical production as raw materials to product series compounds of fluorine and white carbon black. The ammonium fluoride and/or ammonia are/is introduced into an absorption system to get a (NH4) 2SiF6 solution with the absorbing solution concentration of 25 to 37 percent or the ammonium fluoride and the sodium fluorosilicate react to get a reaction product of sodium fluoride crystallization, fluosilicic acid solution and septenary-fluorine compound NH4F.(NH4)2SiF6 crystallization. The absorption liquid or the reaction product is aminated to get precipitated silica (white carbon black) with the specific surface of 100-180m<2>/g, and the latter can get a sodium fluoride product and an NH4F solution with the concentration of 30 to 45 percent. The solution used as a starting point can nearly prepare all inorganic fluoride chemical products, and ammonium fluoride, sodium fluoride, potassium fluoride, ammonium bifluoride, cryolite, aluminum fluoride, sodium hydrogen diffluoride and hydrofluoric acid production, etc. are main. The method has simplicity, effectiveness and higher economic benefit, and simultaneously, fluorine and silicon in the waste gas containing fluoride of phosphate fertilizer for the pollution of environment can be basically eliminated, and basically no waste water, waste gas and waste residue are discharged.

The present invention provided a method for measuring a halogen gas and/or a hydrofluorocarbon for the purpose of controlling the concentration of the halogen gas and/or the hydrofluorocarbon, in a plant producing a halogen compound or a perfluorocarbon, at a predetermined concentration level quickly, easily, and precisely for the control. The present invention provides also a measurement apparatus for the above measurement which has a compact structure, and in which the parts are exchangeable quickly and readily. The present invention provides further a process for producing a halogen compound or a perfluorocarbon employing the measurement method and the measurement apparatus. In particular, the present invention intends to provide a method for measuring safely and quickly a hydrofluorocarbon concentration in a mixed gas stream in a process of producing a perfluorocarbon by direct fluorination reaction of a hydrofluorocarbon and F2.

A packaged product includes a personal care medium, a propellant, and an aerosol container. The personal care medium and the propellant are stored with the aerosol container. At least one of the personal care medium and the propellant includes a non-flammable volatile agent that includes one or more organofluorine compounds. The one or more organofluorine compounds may include one or more trifluoropropene compounds, one or more tetrafluoropropene compounds, and/or one or more pentafluoropropane compounds.

A surface treatment agent, which contains: (A) a hydrolyzable metal alkoxide or a hydrolyzate thereof, (B) a fluorocompound containing a perfluoroalkyl group and a functional group reactive with the hydrolyzable metal alkoxide (A), and (C) an adhesion improvement agent, can provide a film having transparency and durability while maintaining excellent soil releasability and low refractive index.

The invention discloses an aqueous glass frosting powder chemical composition containing a mixed material of an inorganic fluorine compound capable of generating fluorine ions in water, a solid acid compound capable of dissolving in water, an assistant and a filling agent, wherein the mixed material is doped with at least one surfactant; the adding amount of the inorganic fluorine compound is 20 to 90 percent of the total weight percentage of the frosting powder; the adding amount of the solid acid compound is 10 to 60 percent of the total weight percentage of the frosting powder; the adding amount of the filling agent is 1 to 30 percent of the total weight percentage of the frosting powder; the adding amount of the surfactant is 0.1 to 10 percent of the total weight percentage of the frosting powder; and during use, the water is 20 to 100 percent of the total weight percentage of the frosting powder to prepare frosting powder liquid. The technical scheme can avoid acid pollution of the production environment and natural environment because of the inevitable strong acid medium such as sulphuric acid and hydrochloric acid when frosting a glass product by using the prior glass frosting liquid.

A process for producing a bis(fluorosulfonyl)imide anion compound by substituting a bis(chlorosulfonyl)imide anion compound, obtained from sulfamic acid, chlorosulfonic acid, and a halogenating agent, with fluorine is used as a process for producing a fluorine compound for use, for example, in the synthesis of battery electrolytes and ionic liquids. According to the above process, the inclusion of impurities can be reduced, and a high-purity fluorine compound of a bis(fluorosulfonyl)imide compound can be efficiently produced at a high yield. A base catalyst can be used in the reaction for substituting the bis(chlorosulfonyl)imide anion with fluorine. The base catalyst is preferably a nitrogen-containing compound.

The invention provides an etchant composition employed for selectively etching a metallic material in production of a semiconductor device from an insulating material having high dielectric constant, an insulating material of silicon oxide film or silicon nitride film, and a metallic material, characterized in that the etchant composition is an aqueous solution containing a fluorine compound, and a chelating agent having, in the molecular structure thereof, a phosphorus oxo-acid as a functional group; or is an aqueous solution containing a fluorine compound, a chelating agent having, in the molecular structure thereof, a phosphorus oxo-acid as a functional group, and an inorganic acid and/or an organic acid. The invention also provides a method for producing a semiconductor device employing the etchant composition. According to the invention, a metallic material can be etched selectively and efficiently.

The invention discloses a process method for producing fluorine compounds and silicon compounds by cleanly utilizing fluosilicic acid. The process method comprises the following steps of: preparing fluosilicic acid as a phosphorus chemical by-product into an anhydrous aluminum fluoride product, a sodium fluoride product and a cryolite product, and combining with other industrial waste silicon slags and aluminum slags to prepare a 4A zeolite product. The process method comprehensively utilizes the fluosilicic acid and has high resource recovery rate, wherein the recovery rate of the fluorine element reaches higher than 90 percent. Waste silicon dioxide slags generated in the process can be recycled to produce white carbon black and the 4A zeolite, and a mother liquor, a cleaning solution and waste gas which are generated in the production process are all recycled, thereby the environmental pollution is reduced, and the purposes of zero emission and no pollution are truly achieved, thus the method completely meets the requirement for clean production. The invention has the advantages of advanced production process, good product quality and high value, wherein the fluorine content of the aluminum fluoride is high and between 63-65 percent; the quality index of the obtained white carbon black meets the requirement on the standard of the chemical industry; and the quality of the 4A zeolite product meets the requirements on the national standard and the standard of European and American developed countries.

Apparatus and process for the abatement of fluorine and fluorine-containing compounds from gases containing same, such as effluent gas streams from semiconductor manufacturing operations, wherein a fluorocompound abatement medium is injected into the fluorocompound-containing gas. The fluorocompound abatement medium comprises at least one of steam, methane and hydrogen, with the proviso that when the fluorocompound abatement medium contains methane and/or hydrogen, the injection of the fluorocompound abatement medium is conducted under non-combustion conditions.

Disclosed are compositions prepared by free-radical-driven grafting onto hydrocarbons or hydrocarbon ethers of olefinically unsaturated fluorocarbons containing sulfonyl fluoride, fluorosulfonate, fluorosulfonimide, or fluorosulfonyl methide groups, wherein the grafting step is followed by a hydrolysis step in the case of sulfonyl fluoride.

Disclosed is a semiconductor manufacturing process, in which a fluorine radical-containing plasma is used to etch a hard mask and a layer therebeneath; and a treatment is carried out using a gas reactive to fluorine radicals for reacting with residual fluorine radicals to form a fluorine-containing compound and remove it. Thus, precipitates formed by the reaction of fluorine radicals and titanium components existing in the hard mask to cause a process defect can be avoided.

The present invention provides a chemical conversion solution and the surface treating method for realizing high corrosion resistance and high coating adhesion of the metal surface, as well as high throwing power during electrodeposition, and generating no sludge.

A chemical conversion solution comprising (A) at least one compound selected from water-soluble germanium compound, water-soluble tin compound, and water-soluble copper compound, (B) at least one compound selected from water-soluble titanium compound and water-soluble zirconium compound, (C) at least one water-soluble nitrate compound, (D) at least one compound selected from water-soluble aluminum compound and water-soluble magnesium compound, (E) at least one water-soluble zinc compound, and (F) at least one fluorine compound, and, the coating process for the metal structure.

A fluoropolyether adhesive composition comprising (A) a linear polyfluoro compound having at least two alkenyl groups and a perfluoropolyether structure in its main chain, (B) a fluorinated organohydrogensiloxane containing at least two SiH groups, but not alkoxy and epoxy groups, (C) a platinum group metal-based catalyst, (D) an organosilicon compound having at least one silicon-bonded alkoxy group, and (E) a hydrolytic catalyst can be cured to metal and plastic substrates through addition reaction.

Gas-diffusion electrodes containing modified carbon products are described wherein the modified carbon product is a carbon product having attached at least one organic group. The modified carbon product can be used for at least one component of the electrodes such as the active layer and/or the blocking layer. Methods to extend the service life of electrodes as well as methods to reduce the amount of fluorine containing compounds are also described.

This method for processing an electrolyte solution that contains a fluorine compound and an organic solvent comprises: a cleaning step wherein a used battery containing the electrolyte solution is cleaned with a cleaning solvent, thereby extracting the electrolyte solution; a post-cleaning liquid recovery step wherein a post-cleaning liquid obtained in the cleaning step is recovered; a gasification step wherein a volatile component contained in the recovered post-cleaning liquid is gasified at a reduced pressure; a calcium fluoride recovery step wherein a fluorine component contained in a gas that is obtained in the gasification step is recovered in the form of calcium fluoride by causing the fluorine component to react with calcium; and an organic solvent component recovery step wherein the organic solvent component contained in the gas that is obtained in the gasification step is recovered.