815 results about "Magnesium fluoride" patented technology

A rigid and brittle bright metal flake is formed of a central layer of a reflective material supported on both sides by dielectric layers. In a preferred embodiment, the metal layer is aluminum having a thickness of about 100 nm and the dielectrics are either silicon dioxide or magnesium fluoride, each having a thickness of about 100 nm. The result is a very thin three-layered metal flake about 300 nm thick that exhibits a uniaxial compressive strength of about 8 times a corresponding uniaxial tensile strength. As a result, the metal flake is then afforded the benefits of rigidity and brittle fracture during the manufacturing and applicational processes which ultimately provides favorable planar and specular reflectance characteristics in the visible wavelength range.

A method of mass producing polarizes comprises designing by rigorous diffraction theory an optimized grating profile, replicating the profile in a polymer or other substrate, and slope evaporating a metal onto the substrate. The angle of slope evaporation, the metal, and the thickness of the metal are optimized for a given wavelength using rigorous diffraction theory. The polarizer may be coated with a protective coating, such as an acrylic based lacquer or Magnesium Fluoride (MgF2). The optical effect of the coating is also taken into account in the design using rigorous diffraction theory.

The invention discloses a method for recovering polysilicon ingots, carborundum powder and polyethylene glycol from cutting waste mortar. The recovering method comprises the following steps shown as an attached diagram, wherein the high temperature purification comprises the following steps of: mixing the prepared silicon micro powder with a fluxing agent according to the weight ratio of 1: 0.5-5 into lumps, carrying out high temperature treatment in a high temperature vacuum furnace with the treatment temperature range of 1450-1800 DEG C and the treatment time range of 1-10h; and then carrying out directional solidification on melting-state high purity silicon subjected to the high temperature treatment to obtain the polysilicon ingots; wherein the fluxing agent is selected from one or any mixture of silica, alumina, calcium oxide, magnesium oxide, potassium oxide, sodium oxide, calcium fluoride, magnesium fluoride, sodium fluoride, sodium chloride, potassium chloride and calcium chloride. The invention has the advantages that: the yields of carborundum and polyethylene glycol are high and can reach more than 70-80 percent; and the recovered polysilicon ingots reach the purity of 6-7N and completely satisfy of the requirement for preparing silicon slices of silicon solar cell.

A coated chemically strengthened flexible thin glass includes a coating of an adhesive layer in the form of a silicon mixed oxide layer, which contains or consists of a silicon oxide layer in combination with at least one oxide of aluminum, tin, magnesium, phosphorus, cerium, zirconium, titanium, cesium, barium, strontium, niobium, zinc, or boron, and magnesium fluoride, such as at least aluminum oxide.

The invention discloses a high sensitivity temperature sensor. The sensor is characterized by comprising a magnesium fluoride substrate and a magnesium fluoride film, wherein, an annular micro-resonant cavity structure which is formed by utilizing a polymer micro-nano optical fiber is arranged on the magnesium fluoride substrate, one end of the annular micro-resonant cavity is connected with a standard optical fiber input end by the conical transition zone of a monox micro-nano optical fiber, and the other end is connected with a standard optical fiber output end by the conical transition zone of another monox micro-nano optical fiber; and the annular micro-resonant cavity adopts the mode of evanescent wave coupling to realize light input and output, and the magnesium fluoride film covers the above mentioned components, and fixes and seals the components on the magnesium fluoride substrate. The high sensitivity temperature sensor is a temperature sensor based on the annular resonant cavity of a subwavelength-diameter polymer micro-nano optical fiber, overcomes the defects of the prior art, and has the advantages of high sensitivity and response speed.

The invention discloses an active agent and a method for carrying out surface treatment on materials to be welded of aluminium and aluminium alloys so as to improve the energy utilization rate of the aluminium and the aluminium alloys, deepen the fusion depth of welding seams and further obtain higher welding quality. The active agent for laser welding consists of a chloride and a fluoride, wherein the mass ratio of the chloride to the fluoride is (1-2): (1-4); the chloride is at least one of lithium chloride, sodium chloride, potassium chloride, zinc chloride, magnesium chloride, aluminium chloride, calcium chloride or tin chloride; and the fluoride is at least one of lithium fluoride, sodium fluoride, magnesium fluoride or calcium fluoride. When the surface treatment is carried out, firstly the fluoride and the chloride are mixed fully and uniformly, water is added to form a supersaturated solution, then the supersaturated solution is coated on the surface of a welded test piece as a coating agent, then drying is carried out, and finally laser welding is carried out under the condition of gas protection.

The invention discloses silicon solar cell front face electrode silver paste. The silicon solar cell front face electrode silver paste comprises, by mass, 75-80 percent of silver powder, 3-10 percent of lead-free glass powder, 10-15 percent of organic vehicle and 0.5-3 percent of additive. The silver powder is the spherical micro silver powder with nano bismuth serving as the core, the silver content is 99.1-99.7 percent, the bismuth content is 0.3-0.9 percent, the particle size is 1-2 microns, the tap density is 4.5-5.0 g/ml, the specific surface area is 0.4-1.0 m<2>/g, and the silver powder is prepared by conducting liquid-phase chemical reduction on bismuth nitrate and silver nitrate through glyoxal or acetaldehyde. Bismuth-silicon-antimony-molybdenum lead-free glass powder serves as an adhesive, and potassium fluotitanate, potassium fluoroaluminate, magnesium fluoride and the like are added to serve as the silicon nitride antireflective film eroding additive. According to the silicon solar cell front face electrode silver paste, the contact resistance between a silver electrode and a silicon wafer can be reduced, the stripping strength of the electrode is improved, the electrical property of a solar cell is improved, the production cost of the conductive silver paste is reduced, and the requirement for nonexistence of lead and environmental friendliness are met.

Disclosed is a filter including a second layer disposed between a first layer and a third layer. The first layer is composed of iron. The second layer is composed of 1 part by volume of lithium fluoride, 20 to 50 parts by volume of aluminum, and 50 to 80 parts by volume of aluminum fluoride. The third layer is composed of 1 part by weight of lithium fluoride and 99 to 100 parts by weight of magnesium fluoride.

The invention provides an anti-light reflection ultraviolet light curing coating for plastic surfaces, which comprises urethane acrylate containing vinyl unsaturated groups, acrylate activated monomers containing vinyl unsaturated groups, UV initiators, additives and solvents and is characterized by also being added with nano-scale magnesium fluoride, silicon dioxide or titanium dioxide. The nano-scale magnesium fluoride, silicon dioxide or titanium dioxide is added into the curing coating component of the product of the invention, so that the prepared product has obvious effect on preventing light reflection of ultraviolet light. Compared with the product which is not added with nano-scale magnesium fluoride, silicon dioxide or titanium dioxide, by observation under a yellow monochromatic source by naked eyes, the rainbow patterns of the product of the invention are obviously reduced.

An advanced, very high transmittance, back-illuminated, silicon-on-sapphire wafer substrate design is presented for enabling high quantum efficiency and high resolution, silicon or silicon-germanium avalanche photodiode detector arrays. The wafer substrate incorporates a stacked antireflective bilayer between the sapphire and silicon layers, comprised of single crystal aluminum nitride (AlN) and non-stoichiometric, silicon rich, amorphous silicon nitride (a-SiN_X<1.33), that provides optimal refractive index matching between sapphire and silicon. A one quarter wavelength, magnesium fluoride (λ/4-MgF₂) antireflective layer deposited on the back surface of the thinned sapphire provides refractive index matching at the air-sapphire interface. Selecting a composition of x=0.62 for a-SiN_X, tunes an optimal refractive index for the layer. Selecting design thicknesses of 52 nm for single crystal AlN, 30 nm for a-SiN_0.62, and 120 nm for λ/4-MgF₂ yields a back-illuminated optical transmittance T>50% for 250-300 nm, T>70% for 300-400 nm and T>90% for 400-1100 nm.

The invention discloses a flux-cored wire special for maritime work low-temperature high-strength steel. The flux-cored wire is composed of carbon steel skin and a flux core. The flux-cored wire comprises, by mass, 35%-40% of rutile, 2%-5% of magnesium oxide and/or calcium oxide, 0.5%-2% of zircon sand, 15%-25% of low-carbon ferromanganese, 4%-6% of magnesium fluoride, 2%-4% of aluminum magnesium alloy, 7%-10% of ferrosilicon, 5%-8% of ferrotitanium, 0.5%-2% of rare earth oxide, 9%-11% of nickel powder and the balance iron powder and inevitable impurities. The flux-cored wire does not contain boron (B) and has excellent welding technological performance. The comprehensive performance of deposited metal and welded joints is that the yield strength is larger than or equal to 470 MPa, the tensile strength is larger than or equal to 550 MPa, the elongation is larger than or equal to 22%, and KV2 is larger than or equal to 50 J when the temperature is -60DEG C.

This optical component includes a film formation substrate made of plastic, a magnesium fluoride film formed at an upper side of the film formation substrate and a first silicon oxide film formed on the magnesium fluoride film. The magnesium fluoride film may be formed on a surface of the film formation substrate. Alternatively, the optical component further may include a second silicon oxide film formed on a surface of the film formation substrate and between the film formation substrate and the magnesium fluoride film. The optical component can be realized, which is excellent in film adhesiveness, mechanical strength, drug resistance, environment resistance, and the like, as well as optical characteristics, and which is also excellent in productivity, film formation operability, cost, and the like.

The invention discloses a preparation method of a semiconductor nano-wire-based organic/inorganic composite solar cell, belonging to the technical field of new energy resources. The method is characterized by comprising the following steps: preparing nano silicon with good light absorption performance in a visible light area by an electrochemical corrosion or hydrothermal corrosion technology; growing a zinc oxide or titanium dioxide or cadmium selenide nano-wire array on the nano silicon substrate by a high-temperature chemical vapor deposition method or low-temperature liquid phase chemical method; spinning poly-3-hexylthiophene (P3HT) or poly[2-methoxy-5-(2-ethyhexyloxy)-1,4-p-phenylene vinylene] (MEH-PPV) or poly(3-octylthiophene) (P3OT) on the nano-wire array to form a three-layer composite structure system; and finally preparing a magnesium fluoride or calcium fluoride surface anti-reflection film and metal film electrode to form a solar cell device. The process disclosed by the invention is simple, the operation is simply and easily implemented, the preparation conditions are mild, the repetition rate reaches 100%, and the prepared organic/inorganic composite material system is an important material for manufacturing a full-silicon-based solar cell device in the future.

Provided is a reflective aluminum nanorod array. Each nanorod and a magnesium fluoride layer, an aluminum reflective layer and a dielectric substrate layer corresponding to the nanorod constitute a unit structure. The unit structures have narrow band response to red, green and blue light respectively, and the unit structures are recorded as a unit structure R, a unit structure G and a unit structure B respectively. The three unit structures are alternately arranged in sequence in the length direction of the unit structures. A method for realizing color hologram by using the reflective aluminum nanorod array comprises the steps of determining the main wavelength of response, finding out the side length of the unit structures, the thickness of the magnesium fluoride layers and the width, height and length of the nanorods, calculating the arrangement period size, the number of units and the orientation angle, and arranging the three unit structures alternately for color hologram. The advantages are as follows: the process is simple and has high stability and reliability; the aluminum nanorod corresponding to each structure parameter modulates the phase of light of only one color, and there is no crosstalk between light of different colors; and the reflective aluminum nanorod array and the method can be widely used in true color 3D display, information storage and other fields.

The present invention corresponds to the use of p and n-type oxide semiconductors based on copper nickel (OCu_x Ni_y, with 0<x<3; 0<y<3) or multicomponent Gallium-Tin-Zinc-Copper-Titanium oxide, designated here after as GSZTCO, in different molar compositions, having an amorphous or crystalline structure and with the electrical characteristics of a donor or electron acceptor semiconductor, doped or not doped with impurities, such as, Zirconium or nickel or nitrogen, as a way to control the semiconductor electronic behaviour (valence); including the manufacture process at room temperature or temperatures below 100° C. and their applications in optoelectronic and electronic fields is to manufacture devices, such as, Complementary-Metal-Oxide-Semi-conductors, thin film transistors, pn heterojunctions, logic gates, O-ring oscillators, using as substrate glass, metal foils, polymers or cellulose materials, in which a protection layer based on magnesium fluoride is used, together with a tantalum oxide matching layer of the active semiconductors to a dielectric, such as, silicon dioxide.

The invention belongs to the field of welding material production, and discloses a 9Ni steel sintered flux and a preparation method thereof. The sintered flux comprises the following components in percentage by weight: 20 to 30 percent of dead-burned magnesite clinker, 8 to 18 percent of fluorite, 20 to 30 percent of corundum, 1 to 3 percent of elpasolite, 10 to 20 percent of grammite, 2 to 8 percent of strontium carbonate, 1 to 5 percent of rutile, 1 to 3 percent of silicon iron, 1 to 3 percent of ferrotitanium, 1 to 5 percent of manganese metal, 1 to 5 percent of magnesium fluoride and 1 to 3 percent of chromium oxide green. The preparation method comprises the following steps of: performing dry-mixing on mineral materials and iron alloy in a formula for 5 minutes; adding water glass to perform wet-mixing; then pelleting the mixture; drying pellets for 3 hours under the atmospheric environment; baking the pellets in a baking oven at a low temperature of 150 DEG C for 2 hours; then baking the pellets at a high temperature of 800 DEG C for 1 hour; performing furnace cooking, and crushing and screening the pellets to obtain a 12-60-mesh finished product of the flux. When the flux disclosed by the invention is matched with an ERNiMo-8 welding wire to perform welding, the flux has the following characteristics that: 1) a welding seam process has high performance, electric arcs during welding are stable, the surface of a welding seam is white and bright without an oxide color, molten slag is turned up automatically and can be taken off with a slight contact, the welded seam is formed to have a beautiful appearance, the welding bead height is moderate, and the welded same infiltration angle is moderate; 2) the flux can be matched with the ERNiMo-8 welding wire in use, and the comprehensive mechanical property is high; and 3) the flux can be matched with the ERNiMo-8 in use, and the chemical components of a deposited metal are easy to control.

The invention discloses a long-range surface plasma resonance sensor and a preparation method thereof. The sensor is formed by bonding a BK7 prism and a glass slide through cedar oil, wherein the outer surface of the glass slide is plated with a magnesium fluoride thin film, a silver film and a gold film in turn; the gold film is directly contacted with biological solution to be detected and is used for detecting the biological solution in a mode of angle modulation; magnesium fluoride with the refractive index of about 1.38, which is close to that of the biological solution, can form approximatively symmetric structures on two sides of a metal conductive layer so as to ensure that surface plasmas on the two sides of the metal conductive layer are coupled to form the long-range surface plasma; compared with other metals, the metal silver used as the conductive layer has a narrower half band width of a resonance absorption peak, but has unsteady chemical properties; a conductive layer gold film can make a resonance angle generate a greater transition along with the change of the refractive index of the biological solution to be detected; simultaneously, the conductive layer gold film has stable chemical properties and high biological affinity. The specific multilayer film structure can integrate the advantages of each film and effectively improve the sensitivity of biological sensors.

The invention provides a method for extracting valuable metal from cobalt metallurgical waste. The method comprises the following steps of S1, calcium removal, S2, copper separation, S3, calcium and magnesium removal, and S4 zinc separation. The method has the beneficial effects that 1, impurity removal liquid generated by the impurity removal procedure of cobalt wet metallurgy P204 or the valuable metal in manganese-rich slag after the impurity removal liquid is precipitated can be sufficiently utilized; 2, the metal recovery rate of the method is high, the recovery rate of calcium can reach 85% or over, and the recovery rates of copper, cobalt, manganese and zinc can reach 90% or over; 3, the technological process of the method is short and only has four steps, and applied raw and auxiliary materials are easy to obtain and low in cost; and 4, the technological process does not involve high temperature or high pressure, reaction conditions are mild, and the number of potential safety hazards is small. Calcium sulfate generated through the method can serve as a raw material for production of cement, a small amount of generated calcium fluoride slag and a small amount of generated magnesium fluoride slag can be sent to a fluorination plant to serve as raw materials, and environmental friendliness is achieved.