8 results about "Central layer" patented technology

Disclosed is an absorbent core for use in an absorbent article, the absorbent core extending in a transverse direction and a longitudinal direction and having a thickness in a vertical direction perpendicular to the transverse direction and longitudinal direction, the absorbent core comprising: a liquid-permeable top cover layer; abottom cover layer; a high loft central layer between the top cover layer and the bottom cover layer, the high loft central layer having a top surface and a bottom surface, wherein the high loft central layer has from about 0.05 g / cm3 to about 0.15 g / cm3 at 4.14 kPa (0.6 psi) and / or the initial thickness of the central layer at 4.14 kPa (0.6 psi) is more than about 0.30 mm, as measured using Thickness and Density Measurement Method herein; and a superabsorbent polymer in the form of particles deposited on the high loft central layer, wherein the superabsorbent polymer particles have a capacity of at least about 20g / g as measured by the CRC method described herein; wherein each of the top cover layer and the bottom cover layer are bonded to the top surface and the bottom surface of the high loft central layer, respectively, by a substrate adhesive having a density of less than about 13gsm,; wherein each of the top cover layer and the bottom cover layer are further bonded to the top surface and the bottom surface of the high loft central layer, respectively, by an auxiliary adhesive having a density of more than about 25gsm, the auxiliary adhesive distributed for less than 10%of each of the area of the high loft central layer facing the top cover layer and the bottom cover layer.

This invention provides a method, apparatus, and silicon carbide single crystal preparation method, relating to the field of silicon carbide single crystal technology. The method includes: vertically arranging multiple silicon carbide raw material wafers at intervals at the bottom of a crucible cavity, wherein the multiple silicon carbide raw material wafers have a multilayer structure, and the silicon-to-carbon ratio of the silicon carbide raw material wafers gradually decreases from the central layer to the outer layers; placing a silicon carbide seed crystal in the crucible cavity, the seed crystal being positioned above the multiple silicon carbide raw material wafers; installing the crucible in the furnace cavity of a growth furnace, and growing the silicon carbide single crystal according to a preset growth program. This invention's preparation method, by precisely controlling the ratio of carbon source to silicon source in the raw materials, effectively alleviates the Si / C ratio imbalance problem in the later stages of growth, stabilizes the crystal growth rate, improves the slow growth situation in the later stages, and reduces defects.

An improved method for the production and profiling of insulating panels is herein described, comprising a central layer and two outer coating layers on surfaces which are opposite the central layer, said method comprising production of a continuous strip of insulating panel; first sectioning cut of a first panel segment that is transverse to a sliding direction of the continuous strip; longitudinal lateral profiling of the first panel segment; second multiple transverse cut of the first panel segment into a plurality of second panel segments and preferably transverse squaring and profiling of the second segments; and furthermore comprising at least one of the longitudinal lateral profiling step and / or second multiple transverse cut step and / or transverse squaring and profiling step comprises a removal, or peeling step, and collating at least one portion of at least one or both the two outer layers, and a separate removal and recovery step and collating the related central layer, wherein the removal step comprises an incision, lifting, or removal, removing and collating step of at least one of two strips or both comprising the outer coating layers of surfaces which are opposite the central layer, thus generating a surface groove by cutting and removing the outer layers comprising a first foam thickness adhering thereto at the surface groove. A related production and profiling plant of insulating panels is also described.

The present invention relates to a fiber reinforcement material and a submarine cable comprising same, the fiber reinforcement material comprising, on the basis of a central layer of a specific number of straight fibers, two outer layers of stranded fibers that are a specific number of strands inserted into the vicinity thereof, and being used instead of a conventional non-metal tensile material.

An absorbent core (28) for use in an absorbent article (20), the absorbent core (28) having a high loft central layer (43) between a top layer and a bottom layer, and superabsorbent particles (SAP) at least partially distributed within the high loft layer, the superabsorbent polymer particles having a time to reach 20 g / g absorption (SAP T20) of less than 220 seconds, and / or the absorbent core having a time to reach 15 g / g absorption (Core T15) of less than 200 seconds, and / or the absorbent core having a mass fraction of less than 6.0 x 10 -8 cm 2 These properties are measured according to the K(t) test method described herein.

This disclosure relates to multilayer PEX pipes, wherein the core layer or central layer is cross-linked polyethylene PEX sandwiched between two uncross-linked, stable polyethylene layers. The core PEX-a layer constitutes the majority of the pipe's cross-sectional area and is therefore the primary stress-bearing layer of the pipe product. This disclosure also relates to a method for simultaneously extruding all layers to manufacture a composite PEX pipe.

A monolithic bipolar multi-transport stack component for an electrochemical stack and method for manufacturing such are disclosed. The component comprises a fluidically impermeable and electrically conductive central layer having an anode-side and a cathode-side; recess structures provided on the anode side and on the cathode-side of the central layer, and electrically conductive and fluidically permeable outer layers provided on the recess structures on the anode-side and the cathode-side of the central layer so that the recess structures form flow fields between and parallel to the central layer and the outer layers. The central layer, the recess structures, and the outer layers have been formed via powder processing, adhered together before sintering; and sintered in a single sintering process whereby all layers are monolithically connected. The component is thereby a single monolithic component providing the functionality of a bipolar plate, a flow field, and a porous transport layer for each of two adjacent electrochemical cells. No passivation layers can form between the parts of the component providing the functionalities and therefore no Pt coatings between these parts needed.

The invention relates to a laminate comprising at least one central layer disposed between and in contact with a first adjacent layer and a second adjacent layer. The central layer comprises a polymer composition whose polymer matrix comprises 40% to 60% by mass of at least one polymer A comprising repeat units A1 linked together by an amide bond, and 40% to 60% by mass of at least one thermoplastic elastomer B comprising at least one flexible polyether block and at least one rigid polyamide block, the rigid block comprising repeat units B1 linked together by an amide bond, which B1 units are different from the A1 repeat units. The adjacent layers comprise, respectively, polymers C and D having a polyamide block comprising repeat units C1 identical to the A1 repeat units and a polyamide block comprising repeat units D1 identical to the B1 repeat units.