Preparation method of semiconductor nano-wire-based organic/inorganic composite solar cell

A technology of solar cells and inorganic composites, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, nanotechnology, etc., can solve the problems of reducing electron transmission rate and battery energy conversion efficiency, etc., to achieve rapid transportation, reduce crystal effect of lattice mismatch

Inactive Publication Date: 2011-08-10
BEIJING UNIV OF CHEM TECH
View PDF4 Cites 22 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in this kind of organic/inorganic composite system, due to the discontinuous existence of inorganic nanorods in the polymer, that is to say, the carriers do not directly and rapidly transport to the bottom electrode through a simple channel, so that the electrons in the nanocrystal The med

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of semiconductor nano-wire-based organic/inorganic composite solar cell
  • Preparation method of semiconductor nano-wire-based organic/inorganic composite solar cell

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0022]The preparation method of the novel semiconductor nanowire-based organic / inorganic composite solar cell will be described in detail below.

[0023] Place n-type single crystal silicon with resistivity of 0.001-50Ω.cm in different crystal orientations (such as , , , etc.) in 0.5-7.0mol / l hydrofluoric acid and 0.01-0.50mol In the autoclave of the mixed solution of ferric nitrate, the solution volume filling degree of the autoclave is 20%-80%, and the nano-silicon substrate is prepared by hydrothermal etching at 70-170 degrees Celsius for 5-100 minutes, or Using hydrofluoric acid and ethanol solution with a volume ratio of 1:5-1:1 as the electrolytic solution, using a carbon rod as the cathode, and carrying out electrochemical corrosion with a current of 50-500mA to prepare the nano-silicon substrate. Zinc powder and oxygen are used as reaction raw materials, nitrogen is used as a protective gas, the mixing ratio of oxygen and nitrogen is 1:20-1:5, and the chemical vapor de...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a preparation method of a semiconductor nano-wire-based organic/inorganic composite solar cell, belonging to the technical field of new energy resources. The method is characterized by comprising the following steps: preparing nano silicon with good light absorption performance in a visible light area by an electrochemical corrosion or hydrothermal corrosion technology; growing a zinc oxide or titanium dioxide or cadmium selenide nano-wire array on the nano silicon substrate by a high-temperature chemical vapor deposition method or low-temperature liquid phase chemical method; spinning poly-3-hexylthiophene (P3HT) or poly[2-methoxy-5-(2-ethyhexyloxy)-1,4-p-phenylene vinylene] (MEH-PPV) or poly(3-octylthiophene) (P3OT) on the nano-wire array to form a three-layer composite structure system; and finally preparing a magnesium fluoride or calcium fluoride surface anti-reflection film and metal film electrode to form a solar cell device. The process disclosed by the invention is simple, the operation is simply and easily implemented, the preparation conditions are mild, the repetition rate reaches 100%, and the prepared organic/inorganic composite material system is an important material for manufacturing a full-silicon-based solar cell device in the future.

Description

Technical field: [0001] The technical field of the present invention belongs to the technical field of high-efficiency solar cells. The development of related devices has good technical application prospects, and relates to a class of nano-silicon, II-VI group compounds zinc oxide, titanium dioxide, cadmium sulfide, cadmium selenide, and cadmium telluride Nanowire arrays, organic polymers poly3-hexylthiophene (P3HT), poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-styrene] (MEH-PPV), poly 3-Octylthiophene (P3OT), three different semiconductor materials are combined to prepare an organic / inorganic composite solar cell structure with high conversion efficiency and stable performance of "organic polymer / II-VI compound nanowire / nano-silicon" new technology. The organic / inorganic composite solar cell realized by the technology of the invention is a technological development attempt of the existing silicon crystal solar cell, conforms to the current energy technology direction of the countr...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L51/48H01L51/42H01L51/46B82Y40/00C30B33/10C25F3/12C30B29/16
CPCY02E10/50Y02E10/549Y02P70/50
Inventor 许海军廛宇飞苏雷李德尧唐颖韦昭孙晓明
Owner BEIJING UNIV OF CHEM TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap