115results about How to "Reduce mismatch" patented technology

The utility model discloses an impedance matcher, a radio frequency assembly and plasma processing equipment. Each impedance matcher comprises an impedance matching network and a control unit, at least one impedance matcher is electrically connected between the radio frequency source and the load end through a radio frequency link, and the impedance matching network is electrically connected with the control unit through a high-speed communication bus, the radio frequency source is electrically connected with the control unit through a high-speed communication bus, and the load end is electrically connected with the control unit through a high-speed communication bus. The impedance matching network, the control unit, the radio frequency source and the load end are provided with industrial Ethernet control automation technology ports and / or gigabit transmit-receive interfaces, so that the high-speed communication bus carries out high-speed signal transmission, and the delay is obviously reduced.

The invention provides an integrated gallium nitride and gallium oxide power chip, a preparation method thereof and electronic equipment, and relates to the technical field of semiconductors. According to the epitaxial structure in the integrated gallium nitride and gallium oxide power chip, a GaN layer and a Ga2O3 layer are integrated and epitaxially arranged on the same substrate, heteroepitaxial lattice mismatch is reduced by adopting a method of epitaxially extending the Ga2O3 layer on the GaN layer, and the crystal quality is improved. According to the epitaxial structure, a first functional component is formed on the first area, a second functional component is formed on the second area, the surface of the first area is the surface of the side, deviating from the substrate, of the barrier layer, the surface of the second area is the surface of the side, deviating from the substrate, of the Ga2O3 layer, and the aim that a Ga2O3 power chip and a GaN power chip are integrally arranged on the same substrate is achieved. The processes of lead interconnection, bonding and the like are reduced, the size of a wide bandgap semiconductor power system can be further reduced, and the problems of parasitic loss, response delay, noise and the like caused when discrete chips are integrated are avoided.

The invention discloses an earth surface exposed geologic body reality sense three-dimensional reconstruction method based on a neural radiation field. The method comprises the steps that an earth surface geologic body image data set is acquired; performing feature matching on the image data set by using a feature matching strategy based on a nearest neighbor algorithm and a LightGlue neural network to generate feature point matching information and a feature description file; sparse three-dimensional point cloud data and camera pose information are obtained based on incremental SfM; and obtaining depth information of an image data set based on sparse three-dimensional point cloud data and camera pose information, and establishing a geologic body realistic three-dimensional reconstruction model by using a neural radiation field optimization method fusing the depth information and Gaussian position coding. According to the method, the feature matching precision and the camera pose calculation accuracy are improved, the texture detail expression ability of a geological structure can be improved, the reconstruction quality of a surface geologic body model is enhanced, and geological information support can be provided for the fields of geological research and engineering application.

The invention relates to the field of green planting, and discloses a transplanting process for planting and cultivating green nursery stocks, which comprises the following steps: S1, preparation before transplanting: preparing before transplanting the green nursery stocks; s2, performing soil fixation operation before transplanting: performing soil fixation on the transplanted greening nursery stocks before transplanting the greening nursery stocks so as to improve the survival rate of the greening nursery stocks; s3, nursery stock transportation: carefully hoisting the nursery stocks bound with the soil balls to a transport vehicle, and transporting the nursery stocks to a specified place for transplanting. In the soil fixation operation before transplanting, the soil fixation agent is prepared according to a scientific and accurate proportion aiming at different types of water-retaining agents and soil adhesives matched with the water-retaining agents, so that the soil stability of the root can be effectively enhanced, the soil ball loosening risk is reduced, damage to the root system due to improper use of the water-retaining agents or the adhesives is avoided, and the survival rate of the root system is improved. Therefore, the survival rate of the seedlings in the transplanting process is obviously improved.

The invention discloses a light-emitting diode epitaxial wafer and a preparation method thereof, and relates to the technical field of semiconductor devices. The light-emitting diode epitaxial wafer comprises a silicon substrate, and a buffer layer, a non-doped AlGaN layer, an N-type AlGaN layer, a multi-quantum well layer, an electron barrier layer, a P-type AlGaN layer and a P-type contact layer which are sequentially stacked on the silicon substrate, the buffer layer comprises an oxide layer and a barrier layer which are sequentially stacked on the silicon substrate; the oxide layer comprises a three-dimensional Si gradient doped Ta2O5 layer, a three-dimensional Si gradient doped Ga2O3 layer and a two-dimensional (AlGa) 2O3 layer which are stacked in sequence; the barrier layer comprises a three-dimensional Mg-H doped BAN layer and a two-dimensional Si3N4 layer which are stacked in sequence. According to the light-emitting diode epitaxial wafer, electric leakage channels can be reduced, the crystal quality is improved, the photoelectric property of an LED device is improved, and the problem of high leakage current of a silicon substrate GaN-based LED is solved.

The invention provides a multi-type storage cluster dynamic nano-management method based on a cloud platform, and belongs to the technical field of cloud platform storage resource management, a storage pool is used as a minimum management unit, a configuration center provides a unified nano-management entrance and is associated with a platform initialization process, and initialization of standardized parameters such as a storage cluster IP, an account and the like is automatically completed; after management, block storage, file storage or object storage types and exclusive parameters thereof are configured for the storage pool according to business requirements, and available storage pools are screened according to binding relations when storage services are created, so that resource mismatching is avoided. Bidirectional synchronization is carried out between the operation and maintenance resource management module and the storage module through a full life cycle by using an equipment SN number, so that state consistency and traceability are realized; expansion of newly added storage pools, unbinding of the storage pools and resource recovery are supported, and the resource utilization rate and the operation and maintenance efficiency are improved.

The invention discloses a light-emitting diode epitaxial wafer, a preparation method thereof and a light-emitting diode, and relates to the field of semiconductor photoelectric devices. The light-emitting diode epitaxial wafer sequentially comprises a substrate, a buffer layer, a non-doped GaN layer, an N-type GaN layer, a multi-quantum well layer, an electron blocking layer and a P-type GaN layer. The multi-quantum well layer sequentially comprises a first multi-quantum well layer, an end well layer and an end barrier layer, the first multi-quantum well layer comprises a quantum well layer and a quantum barrier layer, and the end barrier layer sequentially comprises an AlInGaN layer, a superlattice layer, an AlN layer, a first boron-containing nitride layer and a second boron-containing nitride layer; the superlattice layer comprises AlGaN layers and Mg-doped GaN layers which are alternately stacked; the first boron-containing nitride layer and the second boron-containing nitride layer are BGaN layers and / or BInGaN layers and are doped with Mg, and the Mg doping concentration of the first boron-containing nitride layer and the second boron-containing nitride layer is larger than that of the Mg-doped GaN layer. By implementing the invention, the luminous efficiency of the light-emitting diode can be improved.

The invention relates to a map construction method and device based on visual SLAM (Simultaneous Localization and Mapping). The method comprises the following steps: acquiring a target environment image in real time through a camera; calculating a camera pose according to the target environment image; extracting point, line and surface features in the target environment image, and constructing an error function of similar features and heterogeneous features according to the camera pose; constructing an optimization solver comprising a nonlinear equation and an iterative algorithm, wherein the nonlinear equation is used for calculating the moving trajectory of the camera; inputting the point, line and surface features of the current frame, determining the camera pose of the camera in the next frame relative to the point, line and surface features, and determining the mapping relation of the point, line and surface features of the current frame in the next frame according to the error function; according to the method, the point, line and surface features in the next frame are iteratively optimized according to the mapping relation to complete the construction of the map, and by constructing an error function and iteratively optimizing, the features of different image frames can be effectively matched, mismatching is reduced, and the matching accuracy is improved.

The present application relates to the technical field of array signal processing and wireless communication, and particularly relates to a beacon source assisted self-calibration and robust beamforming method, comprising: collecting array snapshot data and constructing sample covariance; extracting spatial features based on coarse direction prior of auxiliary signal source and performing reliability determination; estimating geometric drift parameters through per-element phase ratio estimation; constructing parameterized covariance model based on calibrated array manifold and estimating noise power; estimating power coefficients of each signal source by using non-negative constraint fitting estimation; reconstructing INCM and optionally diagonally loading to enhance reversibility; calculating MVDR weight vector based on reconstructed INCM and outputting beamforming result; when reliability determination fails, falling back to nominal geometry or preset geometry to avoid false calibration. The present application has the advantages of geometric self-calibration, low snapshot robustness, false calibration prevention and wide application range.

The present application provides semiconductor nanoparticles, thin films containing the semiconductor nanoparticles, and electronic devices including the thin films, wherein the semiconductor nanoparticles include: a cluster composed of a first semiconductor compound; a core covering at least a portion of the surface of the cluster and containing a second semiconductor compound; and a shell covering at least a portion of the surface of the core and containing a third semiconductor compound, wherein the first semiconductor compound and the third semiconductor compound each contain zinc (Zn), the second semiconductor compound contains Zn, tellurium (Te) and selenium (Se), the first semiconductor compound and the second semiconductor compound are different from each other, and the second semiconductor compound and the third semiconductor compound are different from each other.

The rotating electric machine control device includes: a first inverter that applies an AC voltage to the three-phase windings of the first system of the rotating electric machine based on a first DC voltage output from a DC power supply of a first system; a second inverter that applies an AC voltage to the three-phase windings of the second system of the rotating electric machine based on a second DC voltage output from a DC power supply of a second system; a first control unit; and a second control unit, wherein, when the DC voltage of the current system is higher than the DC voltage of other systems, the first control unit and the second control unit respectively use the DC voltage of the other systems to limit the voltage command of the current system related to the voltage applied to the three-phase windings of the current system, and generate a value normalized to the current system voltage command using the DC voltage of the current system as a command value for the inverter of the current system.

This invention provides a light-emitting diode epitaxial wafer and its fabrication method. The light-emitting diode epitaxial wafer includes a substrate, and a buffer layer, an undoped GaN layer, an N-type GaN layer, a multiple quantum well layer, an electron blocking layer, and a P-type GaN layer sequentially deposited on the substrate. The buffer layer includes a nitrided graphene buffer layer, an h-BN buffer layer, and a B-type GaN layer sequentially deposited on the substrate. x Al 1‑x N buffer layer, AlN buffer layer, wherein, the B x Al 1‑x The boron content in the N-buffer layer gradually decreases along the growth direction of the epitaxial layer. This invention achieves this by sequentially arranging a graphene nitride buffer layer, an h-BN buffer layer, and a boron buffer layer between the substrate and the epitaxial structure. x Al 1‑x N-buffer layers and AlN-buffer layers reduce lattice mismatch between structures, lower defect density, and improve the overall quality of LED epitaxial wafers.

There is provided a mask data preparation method including: generating exposure-level pattern data including a first layout and a second layout positioned across a boundary line between a first exposure data region and a second exposure data region adjacent to the first exposure data region; generating a first correction layout and a first plurality of auxiliary patterns associated with the first layout based on the exposure level pattern data; generating a second correction layout and a second plurality of auxiliary patterns associated with the second layout based on the exposure level pattern data; generating corrected exposure level pattern data based on the first correction layout, the first plurality of auxiliary patterns, the second correction layout, and the second plurality of auxiliary patterns; extracting first mask data based on the corrected exposure level pattern data; and extracting second mask data based on the corrected exposure level pattern data.

The invention discloses an epitaxial structure, a preparation method thereof and a light-emitting diode, and belongs to the technical field of semiconductors. The epitaxial structure comprises a substrate, a light-emitting layer formed on the substrate, an N-type current expansion layer and a P-type current expansion layer which are formed on the two sides of the light-emitting layer, and an electron blocking layer formed between the light-emitting layer and the P-type current expansion layer. Wherein the light-emitting layer comprises at least one pair of quantum well layer In < x > Ga < 1-x > N and quantum barrier layer In < y > Ga < 1-y > N, and y < lt > is greater than or equal to 0; x < 1. The material components of the quantum well layer InxGa1-xN and the quantum barrier layer InyGa1-yN both comprise indium, gallium and nitrogen, so that lattice mismatch is reduced, compression stress caused by lattice mismatch is reduced, the piezoelectric polarization effect is weakened, meanwhile, the recombination efficiency of current carriers is improved, the external quantum efficiency is improved, and the performance of the light emitting diode is improved.

The application discloses a kind of time difference risk hedging method and device of insurance fund custody, it is related to financial risk control technical field, the method includes: creating virtual sub-account for each user and being bound with corresponding policy account one by one to realize fund physical isolation;When consumption incentive enters the custody special account, it is frozen to corresponding virtual sub-account by calling bank freezing interface and generates directional payment instruction;When daily business ends, generate custody fund flow sheet snapshot, before batch deduction of insurance company next day, pre-reconciliation is carried out to custody fund flow sheet snapshot and to-be-deducted list, and according to result, unfreezing transfer or difference processing is executed;Risk reserve pool is established simultaneously, when unilateral account is abnormal, first pay, complete account adjustment to realize error recovery after finding out reason and clearing up.The application realizes fund physical isolation by virtual sub-account binding and fund freezing directional transfer, effectively hedges the supervision and operation risk caused by fund circulation time difference, and improves the stability of fund custody.

The invention discloses a field-based interactive teaching device for intelligent education, and the device comprises a connecting rod, the upper surface of the connecting rod is fixedly provided with a butt-joint rod, the upper surface of the butt-joint rod is fixedly provided with a first butt-joint disc, the upper surface of the first butt-joint disc is rotatably provided with a lifting mechanism, and the lifting mechanism is internally provided with a sleeving mechanism in a sliding manner. The LED display screen can be inserted into the sleeving mechanisms in a sliding mode, a first extension plate is installed between the two sleeving mechanisms in a sliding and penetrating mode, and a pushing mechanism is rotationally installed between the connecting rod and the lifting mechanism. Through the design of the sleeving mechanism, no tool needs to be used in the process of mounting and dismounting the LED display screen, the mounting and dismounting process is quicker, tool operation is not needed, the possible accident risk in the tool use process is reduced, the LED display screen can be quickly mounted and dismounted in various environments, and the mounting and dismounting efficiency of the LED display screen is improved. The method is not limited by the availability of tools, and the capability of dealing with emergency situations is improved.

The application discloses a random rotation DEM structure for reducing switch activity, comprising a digital-to-analog converter, a digital input of the digital-to-analog converter is divided into an input code and a random rotation number, the random rotation number is input into a switch activity reduction structure through a barrel shifter output result delayed by a D flip-flop for one period, a feedback output of the switch activity reduction structure is fed back to the barrel shifter as an input, and an output of the barrel shifter after rotation controls corresponding switches and is connected to a corresponding cell array. The application uses input data to replace a pseudo-random number generator, and uses relatively simple logic to realize a switch activity reduction function, so that the complexity is reduced.

The imager pixel includes a forward biased photodetector having a reading transistor for light-to-current conversion, and a ratio reading system including a current-to-pulse width converter. The reading system operates in an optical mode to: generate a first current proportional to the photodetector current and the leakage current under exposure to the photodetector voltage; and converting the first current into a first pulse width; and a reading system operating in a least significant bit (LSB) mode to: generate a second current proportional to a least significant bit (LSB) current and a leakage current under exposure to a gate-to-source voltage, and generate a second current proportional to the leakage current under exposure to a gate-to-source voltage, and to generate a third current proportional to the leakage current under exposure to the gate-to-source voltage, and to generate a fourth current proportional to the second current under exposure to the gate-to-source voltage and the third current under exposure to the gate-to-source voltage. And converting the second current into a second pulse width. The system includes a converter circuit for converting a first pulse width to a count (CNTB) and a second pulse width to a count (CNTA), and a count circuit for providing readings of a radiation measurement based on a ratio of CNTB to CNTA.

The application belongs to the technical field of point cloud processing, and discloses a multi-modal semantic mapping method and system based on a master-slave architecture. The method comprises the following steps: S1, extracting feature points in point cloud data and calculating the covariance matrix of the neighborhood point cloud of each feature point; S2, solving the optimal pose corresponding to the minimum of the target function; S3, converting the obtained point cloud data into a world coordinate system using the optimal pose, fusing all frame point cloud data in the world coordinate system to form a three-dimensional point cloud map, projecting the three-dimensional point cloud map to a camera coordinate system, and inputting the three-dimensional point cloud map projected to the camera coordinate system into a semantic segmentation neural network to obtain the semantic label corresponding to each point cloud in the three-dimensional point cloud map, thereby achieving semantic mapping. Through the application, the problems of weak dynamic adaptability, insufficient model generalization ability and long-term running precision decay of the traditional three-dimensional semantic mapping method in a dynamic complex scene are solved.

The present invention discloses an epitaxial structure with high crystal quality, which comprises, from bottom to top, a substrate, an AlN thin film layer, a high-temperature buffer layer, a non-doped gallium nitride layer, an N-type layer, a multi-quantum well active layer, an electron blocking layer, a P-type layer and a P-type contact layer, wherein the material of the AlN thin film layer is AlN, the material of the high-temperature buffer layer is AlxGa(1‑x)N(0≤x≤1), and the growth temperature is 700-1000°C.

The application discloses a kind of real-time ranging modeling system using double camera, it is related to visual ranging technical field, including: calibration acquisition module, calibration first camera focal length and two camera baseline length, acquisition first camera image and second camera image, generate processing area, establish image cache queue;Static correction module extracts static anchor point in processing area, constructs triangular mesh element, with first camera image as reference, according to triangular mesh element to the position correction of second camera image, form second camera image after position correction;Contour ranging module extracts target contour position based on first camera image, forms target contour circumscribed rectangle, matches the same sequence contour position in second camera image after position correction, generates contour parallax, and according to contour parallax conversion target distance value, forms target contour proximal depth boundary, target contour mid-depth boundary and target contour distal depth boundary.

The application discloses a laser radar multi-target tracking system and method in a complex scene, comprising a detection module, a state prediction module, a data association module, a state updating module and a trajectory management module, three-dimensional laser radar acquires original point cloud data in real time and obtains target detection results by the detection module; the position of each target at t-1 time in the subsequent time period is calculated by the state prediction module; the detection results are associated and matched with the calculation results by the association module; the detection results matched successfully in S3 are taken as new observation data to update the calculation results by the updating module; the associated results are managed by the trajectory management module; in conclusion, the application overcomes the shortcomings of the prior art, is reasonable in design, provides an efficient and accurate three-dimensional laser radar multi-target tracking method in a complex scene, and has high social use value and application prospect.

The invention relates to the technical field of data visualization, and aims to solve the problem that powerful support is difficult to provide for regional industry planning and accurate resource delivery due to the fact that a conventional chart is difficult to map a complex medical and invasive ecological structure when a medical and invasive industry pattern is presented in the prior art. Therefore, the invention provides a visualization system for presenting an industrial map based on medical and invasive data, and the system comprises a data collection module which collects the medical and invasive data of all medical and invasive subjects in a target area; the association map construction module constructs an association map of the subject of the department and wound; the association map processing module adopts a map convolutional network to process the association map of the department and wound subject; the judgment module judges whether the target node has the invasive strength label or not; a label endowing module endowing a matched department invasive strength label to the target node and the potential strength main body associated with the target node; and the industrial map visualization module constructs an industrial map and visually presents the industrial map. According to the invention, the association of the department and wound subjects can be presented in the form of an industrial map, and decision basis is provided for decision makers.

This invention discloses a method for registering industrial printed images based on a lightweight network. The method includes: S1 Image acquisition and dataset construction, which uses a CCD industrial camera to acquire images of the front and back of printed materials and constructs a training dataset by combining multispectral images; S2 Constructing a DHSiam network, which includes two parallel feature extraction networks; S3 Proposing an attention heterogeneous mechanism, which includes a position regression unit and a lightweight unit to enhance data representation and reduce model parameters; S4 Constructing a cross-entropy loss function with additional margin to enhance network performance metrics. This invention builds a hardware platform with 8 parallel GPUs, uses only AMC-Loss to distinguish image similarity, utilizes the attention heterogeneous mechanism to extract important information from feature maps at different scales, and adjusts model parameters to enhance the algorithm's performance on mobile devices, thereby comprehensively improving the model's ability to register printed images with different perspectives and deformations.

This invention discloses a high-elongation cast Al-Cu-Zn-Mg alloy with good resistance to hot cracking. The alloy composition, by mass percentage, includes: Cu 3.5–4.5%, Mg 0.4–1.5%, Mn 0.2–0.5%, Ti 0.10–0.2%, Zn 2.5–3.5%, with the balance being Al and unavoidable impurity elements. Addressing the limitations of existing Al-Cu casting alloys, such as wide solidification temperature range, poor fluidity, and hot cracking, this invention provides a high-Zn-content Al-Cu-Zn-Mg alloy with good resistance to hot cracking. This alloy has a low melting point, a narrowed solidification temperature range, and excellent resistance to hot cracking and mechanical properties. It can be used for various high-strength cast aluminum alloy structural parts, effectively avoiding casting defects such as hot cracking, shrinkage cavities, and porosity, and significantly improving the overall mechanical properties of the alloy.

The present application relates to the technical field of image reconstruction, in particular to a kind of imaging method of 3D space position information and 2D color texture information fusion, comprising the following steps: according to 2D color texture information, extract 2D color texture information internal gray level co-occurrence matrix pixel parameter, generate two-dimensional color mutation boundary, obtain 3D space position information accompanying space isomorphism determination item.In the present application, three-dimensional feature distribution skeleton coordinate set is used to participate in the solution of curved surface control point, so that the spatial curved surface reconstruction has continuity and geometric consistency;Finally, by converting two-dimensional color mutation boundary coordinates into Lagrange multiplier constraint variable and embedding into the solving process, the boundary constraint directly participates in the three-dimensional curved surface generation process, and then the texture pixel value is mapped to the external connection surface of three-dimensional curved surface grid node set, to realize the synchronous expression of space structure and texture information.

The invention discloses a digital-to-analog converter with high linearity. The digital-to-analog converter comprises a dynamic element matching circuit, a cross point adjusting circuit, a current source array, a switching circuit, a comparator module, a load resistor module and a feedback resistor module, the dynamic element matching circuit converts the digital input signal of a binary code into a control signal of a pseudo-random thermometer code, and the cross point adjusting circuit adjusts the control signal and inputs the control signal into the switching circuit to control the switching circuit. The digital-to-analog converter converts a traditional current source array with a current value in a binary multiple relationship into a current source with a current value being a single value, and selects by using a pseudo-random thermometer code control signal adjusted by a cross point, so that the current mismatch is relatively small, the mismatch between the current sources is converted into pseudo-random noise, and the noise is reduced. And the linearity of the digital-to-analog converter is effectively improved.

This invention discloses a method and system for identifying and warning of hazardous sources in mines, relating to the field of mine safety monitoring technology. The method includes: constructing a wireless network inspection system based on the mine inspection area, target facility coordinates, airport deployment location, and wireless communication coverage; controlling a drone to collect inspection control data of the target facilities; performing association and encapsulation on the inspection control data to generate a network inspection data packet; performing consistency verification and validity screening on the network inspection data packet according to a data verification mechanism; sending the screened network inspection data packet into a hazardous source identification model and performing joint judgment based on temperature judgment rules; performing location verification on the joint judgment result to generate a hazardous source control judgment result. This invention, by constructing a wireless network inspection system, achieves collaborative identification and accurate location of hazardous sources in mines, thereby improving the reliability of judgment and reducing data mismatch and false alarms / missed alarms.

The application provides a skull repair implant, a preparation method thereof and a skull repair system. The skull repair implant comprises a main body part, a material of the main body part comprises polyaryletherketone, the main body part has a through hole, an edge of the main body part extends to a region within 1 cm from a center of the main body part, the region is a porous region, the porous region has a plurality of microporous structures, a gel fills the microporous structures to form a composite part, and the gel extends to a region outside the edge of the main body part to form a gel part. The skull repair implant can realize one-time fixation of an inert bone implant, is convenient to use, can shorten operation time, and makes a bone implant process fast and convenient.

The present invention provides a red fluorescent material, a preparation method and an application thereof. The red fluorescent material is a core-shell structure, the core of which is Al m M1 a‑m Al b Si c N d :xEu, housing is A2 n M2 a‑n Al b Si c N d :yEu, A1 and A2 are independently selected from one or more of Ba, Mg, Li, Na and K, M1 includes Sr and Ca, the molar number of M1 is 1, the molar ratio of Sr to M1 is recorded as h, 0.6≤h<1; M2 includes Sr and Ca, the molar number of M2 is 1, the molar ratio of Ca to M2 is recorded as k, 0.6≤k≤1. The red fluorescent material of the present invention adopts a silicon-aluminum-based nitride with a high Sr content as the core, which can provide excellent luminous efficiency, and adopts a silicon-aluminum-based nitride with a high Ca content as the shell, which can provide excellent resistance to water and oxygen corrosion, and the two work together to enable the red fluorescent material to have both high luminous efficiency and high reliability.