109results about How to "Avoid processing defects" patented technology

The present invention proposes a method of forming a dual contact hole, comprising steps of: forming a source/drain region and a replacement gate structure on a semiconductor substrate, the replacement gate structure including a replacement gate; depositing a first inter-layer dielectric layer; planarizing the first inter-layer dielectric layer to expose the replacement gate in the replacement gate structure; removing the replacement gate and depositing to form a metal gate; etching to form a first source/drain contact opening in the first inter-layer dielectric layer; sequentially depositing a liner and filling conductive metal in the first source/drain contact opening to form a first source/drain contact hole; depositing a second inter-layer dielectric layer on the first inter-layer dielectric layer; etching to form a second source/drain contact opening and a gate contact opening in the second inter-layer dielectric layer; and sequentially depositing a liner and filling conductive metal in the second source/drain contact opening and the gate contact opening to form a second source/drain contact hole and a gate contact hole. The present invention also proposes a semiconductor device manufactured by the above process.

A display panel, a manufacturing method of the display panel, and a display device including the display panel are provided. The display panel includes: a substrate; a display unit on the substrate and including a plurality of pixels for displaying an image according to a video signal; a power supply wire on the substrate, coupled to the plurality of pixels, and configured to transmit a driving voltage for driving the plurality of pixels; and a dummy wire on the substrate, separated from the display unit and the power supply wire, and coupled to a ground electrode or a power supply unit for supplying the driving voltage.

A substrate processing apparatus comprises an indexer block, an anti-reflection film processing block, a resist film processing block, a development processing block, and an interface block. An exposure device is arranged adjacent to an interface block. The interface block comprises a drying processing group including two drying processing units and an interface transport mechanism. After a substrate is subjected to exposure processing by the exposure device, the substrate is transported to the drying processing units in the drying processing group by the interface transport mechanism, where the substrate is subjected to cleaning and drying processings.

A coil part is provided. The coil part includes a coil layer including a core and a first coil and a second coil disposed on and under the core, a lower magnetic layer bonded under the coil layer, and an upper magnetic layer bonded on the coil layer. Accordingly, it is possible to improve process and productivity and cut fabrication costs by preventing process defects that occur during the fabrication process of a coil part using a ferrite substrate.

In a tapered roller bearing assembly, a crowning profile formed portion of the roller rolling surface is made up of a contact area crowned portion (7), which is held in contact with an inner ring raceway surface (1a), and a non-contact area crowned portion (8) which is held in non-contact with the inner ring raceway surface (1a). The contact area crowned portion (7) and the non-contact area crowned portion (8) have their generatrices extending in an axial direction of a roller (3), which generatrices are represented by corresponding continuous lines represented by different functions and continued smoothly at a point of connection, and the curvature of the generatrix of the non-contact area crowned portion (8) in the vicinity of the connection point is chosen to be smaller than the curvature of the generatrix of the contact area crowned portion (7).

When a substrate is subjected to bevel cleaning processing, a first magnet plate is arranged at a lower position, and a second magnet plate is arranged at an upper position. In this case, each of chuck pins enters a closed state in a region outside the first magnet plate, while entering an opened state in a region outside the second magnet plate. That is, a holder in each of the chuck pins is maintained in contact with an outer edge of the substrate when it passes through the region outside the first magnet plate, while being spaced apart from the outer edge of the substrate when it passes through the region outside the second magnet plate.

Disclosed is a semiconductor manufacturing process, in which a fluorine radical-containing plasma is used to etch a hard mask and a layer therebeneath; and a treatment is carried out using a gas reactive to fluorine radicals for reacting with residual fluorine radicals to form a fluorine-containing compound and remove it. Thus, precipitates formed by the reaction of fluorine radicals and titanium components existing in the hard mask to cause a process defect can be avoided.

The invention relates to a kitchen garbage slurry anaerobic fermentation wastewater treatment method, in particular to a treatment method for treating wastewater produced in other procedures through wastewater produced after anaerobic fermentation dehydration of kitchen garbage slurry and kitchen garbage. Wastewater is subjected to oil-separation primary precipitation, water amount and water quality adjustment, first pH value adjustment, free ammonia stripping in an ammonia stripping tower, second pH value adjustment, A/O biochemical treatment, precipitation treatment, treatment in a Fenton reactor and treatment in a coagulative precipitation tank, so that pollutants such as COD, BOD5 and SS in the wastewater are removed, TN and TP can be removed effectively, the wastewater chroma can be lowered effectively, the TN and TP removing rates are increased, and pollutants such as COD, BOD5, TN, NH3-N, TP and chroma in the treated wastewater can stably meet the requirements in Integrated Wastewater Discharge Standard (GB8978-1996, grade III standard) and Wastewater Quality Standards for Discharge to Municipal Sewers (GB/T 31962-2015, grade B).

The invention relates to a laser surface processing method of a part and a test piece in a liquid medium, especially to a metal surface laser processing method in a liquid medium with excellent treatment structure and special surface performance by the utilization of a laser preparation means. The concrete implementation process is as follows: the part or test piece is immersed in a container filled with some liquid, and a laser terminal permeates through a liquid water film on the surface of the part or test piece and irradiates on the surface of the test piece or part to be processed. Different requirements for processing the part or test piece can be realized through adjusting height of liquid level, speed of liquid flow and temperature. The method can be used as a method for optimizing laser processing structures and also can be used to preheat the part or test piece to be processed, so as to obtain ideal surface mechanical properties and special functions.

The invention relates to the machining of gear teeth. The machining process comprises: Based on the drawing, it uses the hobber machining the gear to the inspection point A or D, computing the differential change wheel angle t based on the hobber differential mechanism with CB line actual spiral angle and gear and hobber parameter, loosening the differential change wheel, holding the change angle t, imitating the difference of machining small spiral gears, forming fixing point from the end surface fixing theoretical point C. It can get rid of the deficiencies of step, insufficient effective hardening and teeth surface hardness.

A photoresist supply apparatus of semiconductor coating equipment fills a supply line with new photoresist when a used photoresist bottle is replaced. The photoresist supply apparatus includes first and second photoresist bottles, first and second gas supply pipes connected to the bottles, first and second solenoid valves disposed along the gas supply pipes, first and second purge start buttons, first and second photoresist supply pipes, first and second trap tanks to which the supply pipes are connected, a third photoresist supply pipe connected to the trap tanks, a nozzle connected to the third photoresist supply pipe, first and second level sensors disposed at an upper level of the trap tanks, third and fourth level sensors disposed at a lower level of the trap tank, first and second discharge pipes connected to the trap tanks, third and fourth solenoid valves disposed along the discharge pipes, first and second drain sensors associated with the discharge pipes, and a controller.

A substrate processing apparatus comprises an indexer block, an anti-reflection film processing block, a resist film processing block, a drying/development processing block, and an interface block. An exposure device is arranged adjacent to the interface block. The drying/development processing block comprises a drying processing group. The interface block comprises an interface transport mechanism. A substrate is subjected to exposure processing by the exposure device, and subsequently transported to the drying processing group by the interface transport mechanism. The substrate is cleaned and dried by the drying processing group.

An ULPA filter is arranged at the upper portion in a casing. Air outside of the casing is supplied to the ULPA filter through a duct. Clean air that has passed through the ULPA filter is led to an opening of a spin plate through a passage forming member, a connection member, a base, a motor supporting member and a rotating shaft of a spin motor. The spin chuck holds a substrate such that the upper surface of the substrate is opposite to the spin plate. In this state, the spin motor operates, causing the spin plate to rotate and thus the lower surface of the rotating substrate to be cleaned by a cleaning brush.

Transport mechanisms are respectively provided in first and second processing blocks. Each transport mechanism has a hand. The hand holds the other surface of a substrate without coming into contact with an edge of the substrate. The hand is moved such that the substrate is transported between an adhesion reinforcement processing unit or a cooling unit and a coating processing unit or a development processing unit. In the adhesion reinforcement processing unit and the cooling unit, temperature processing is performed on the substrate while the back surface of the substrate is held by suction. In the coating processing unit and the development processing unit, a processing liquid is supplied to the main surface of the substrate while the back surface of the substrate is held by suction by a spin chuck.

In a semiconductor device and method of manufacturing thereof, a first insulation interlayer is formed on a substrate including a lower conductive pattern. The first insulation interlayer has a first opening through which the lower conductive pattern is exposed. An interconnection is formed in the first opening such that the interconnection is contact with the lower conductive pattern and protruded from the first insulation interlayer. A second insulation interlayer is formed on the first insulation interlayer in such a manner that the second insulation interlayer has a second opening through the interconnection is exposed and the second opening is centrally aligned with the interconnection. An upper conductive pattern is formed in the second opening such that the upper conductive pattern is contacted with the interconnection. Accordingly, a mis-alignment between the upper conductive pattern and the interconnection is prevented.

Disclosed is a monitoring TEG for an etching process in a semiconductor device. The TEG includes an etch stopping layer on a substrate and a target layer to be etched provided on the etch stopping layer. The target layer to be etched includes a first opening portion formed by etching a portion of the target layer to be etched and a second opening portion formed by etching another portion of the target layer to be etched. The second opening portion has a smaller depth than the first opening portion. A depth of a partial contact hole formed by a first partial etching process may be measured.

A substrate processing apparatus comprises a multifunctional nozzle having a double-pipe structure. An inner flow path of the multifunctional nozzle is connected to a first supply suction system through a supply suction pipe. An outer flow path is connected to a second supply suction system through the supply suction pipe. The first supply suction system and the second supply suction system have respectively chemical liquid supply sources, rinse liquid supply sources, inert gas supply sources, and ejectors. Such a configuration makes it possible to selectively supply the chemical liquid, supply the rinse liquid, and supply the inert gas and suck in through the inner flow path and the outer flow path of the multifunctional nozzle.