Etchant compositions for nitride layers and methods of manufacturing semiconductor devices using the same

A technology of etchant and composition, applied in the field of etchant composition and the manufacture of semiconductor devices using the same, can solve the problems of residue adsorption, poor solubility and the like

Inactive Publication Date: 2016-05-11
RAM TECH GROUP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the composition may have poor solubility to solvents such as deionized water, and thus may cause residue adsorption on semiconductor substrates or silicon oxide layers

Method used

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  • Etchant compositions for nitride layers and methods of manufacturing semiconductor devices using the same
  • Etchant compositions for nitride layers and methods of manufacturing semiconductor devices using the same
  • Etchant compositions for nitride layers and methods of manufacturing semiconductor devices using the same

Examples

Experimental program
Comparison scheme
Effect test

experiment example 1

[0158] Experimental Example 1: Evaluation of Etching Properties of Etchant Compositions

[0159] To 85% phosphoric acid and water (DIW) add oximosilane or TEOS as the silicon compound, and NH 4 HF 2 or NH 4 F was used as a fluorine compound to prepare the etchant composition of the comparative example. Ammonium hexafluorosilicate (AHFS) as a silicon-fluorine compound was added to 85% phosphoric acid and water to prepare the etchant composition of each example.

[0160] Each etchant composition was stirred by centrifugation at a rate of about 4,000 rpm and monitored to determine whether the components of the composition had completely dissolved in the phosphoric acid.

[0161] Using an etchant composition measured at 160°C for a silicon nitride layer (Si 3 N 4 ) and thermal oxide layer (SiO 2 ), and use the measured results to calculate the etch selectivity.

[0162] The components of the etchant compositions of the comparative example and the example, and the experiment...

experiment example 2

[0170] Experimental example 2: Measuring the change in etching selectivity with the amount of silicon-fluorine compound

[0171] Change the type and concentration of the silicon-fluorine compound, and measure the etching rate ( / min) and etch selectivity. The results obtained are shown in Table 3 below.

[0172] table 3

[0173]

[0174] *AFS: Ammonium Fluorosilicate, SFS: Sodium Fluorosilicate, STF: Silicon Tetrafluoride, HFSA: Hexafluorosilicate

[0175] Referring to Table 3, when the amount of the silicon-fluorine compound exceeds about 0.01% by weight, etch selectivities greater than about 100 are obtained in all five cases. In addition, etch selectivities of greater than about 200 were obtained when the amount of the silicon-fluorine compound reached about 0.05% by weight. Specifically, when AHFS and HFSA were used, the etch selectivity exceeded 250.

[0176] Etch selectivity was measured at 160°C varying the amount of AHFS in stepwise finer units.

[0177] Fi...

experiment example 3

[0180] Experimental example 3: Measuring the change of etch selectivity with temperature

[0181] Utilize the etchant composition comprising phosphoric acid (85% by weight), silicon-fluorine compound (0.05% by weight) and the rest is water to measure the etch rate for the nitride layer and the oxide layer while changing the temperature ( / minute). The results obtained are shown in Tables 4 to 6 below.

[0182] Table 4: For nitride layer (Si 3 N 4 ) etch rate

[0183] temperature(℃)

AHFS

AFS

SFS

STF

HFS

130

28.26

12.42

11.71

22.53

23.69

135

39.86

17.52

16.52

31.78

33.41

140

56.87

24.71

23.30

44.83

47.13

145

69.52

35.25

33.24

63.96

67.24

150

102.09

51.77

48.82

93.92

98.74

160

134.89

68.4

64.5

124.1

130.47

[0184] Table 5: For the oxide layer (SiO 2 ) etch rate

[0185] ...

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Abstract

The invention provides etchant compositions for nitride layers methods of manufacturing semiconductor devices using the same. Tn etchant composition for nitride layers includes phosphoric acid in an amount ranging from about 80 weight percent to about 90 weight percent, a silicon-fluorine compound in an amount ranging from about 0.02 weight percent to about 0.1 weight percent, and a remainder of water, based on a total weight of the etchant composition. The silicon-fluorine compound includes a bond between a silicon atom and a fluorine atom (Si-F bonding). High-etching selectivity of being above 200 of nitride layers relative to oxide layers can be realized through utilization of the etchant compositions.

Description

[0001] Related Application Cross Reference [0002] This application claims priority to Korean Patent Application No. 10-2014-0148922 filed with the Korean Intellectual Property Office on October 30, 2014, the contents of which are incorporated herein by reference in their entirety. technical field [0003] Exemplary embodiments of the present invention relate to an etchant composition for a nitride layer and a method of manufacturing a semiconductor device using the etchant composition. More particularly, exemplary embodiments of the present invention relate to an etchant composition for a nitride layer including an acid solution and a method of manufacturing a semiconductor device using the etchant composition. Background technique [0004] In the manufacture of semiconductor devices, various insulating layers, such as silicon oxide layers and silicon nitride layers, can be stacked. The silicon nitride layer may be selectively etched according to a pattern structure inclu...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/004H01L21/033
CPCH01L21/31111C09K13/08H10B43/10H10B43/27C09K13/04H01L21/306
Inventor 吉埈仍房哲源金学默张湧守沈金噽
Owner RAM TECH GROUP
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