9results about How to "Improved energy resolution" patented technology

This invention relates to the field of nuclear radiation detection technology, and more particularly to an energy spectrum processing method for a quasi-hemispherical CdZnTe detector. The method includes: acquiring the raw signal collected by the quasi-hemispherical CdZnTe detector; normalizing the amplitude of the raw signal from the baseline to the highest point during the rise phase; dynamically selecting multiple energy thresholds; performing rise time discrimination on the normalized signal within each energy threshold; filtering out signals with rise times greater than RTflag and determining the rise time range corresponding to that energy threshold; constructing an intermediate energy spectrum corresponding to each energy threshold based on the signals with rise times greater than RTflag and the rise time range; and post-processing the intermediate energy spectrum to obtain the target energy spectrum corresponding to each energy threshold. This invention combines energy threshold discrimination, rise time discrimination, and energy spectrum post-processing algorithms to stably improve the energy resolution of the quasi-hemispherical CdZnTe detector for 662 keV gamma rays from the conventional 2%~3% to less than 1%.

This invention relates to the field of semiconductor detection technology and discloses a mass spectrometry device with a variable configuration energy analyzer and its control method. By coordinating a variable slit mechanism, an electrode system, and a mode switching controller, this invention enables the same mass spectrometry device to flexibly switch between two operating modes: wide energy acquisition and high sensitivity, and narrow passband and high energy resolution. This resolves the contradiction that existing fixed-parameter energy analyzers cannot simultaneously meet the needs of different analytical tasks. Through pre-storing target operating mode parameter sets and a parallel control strategy, parameters for all operating modes are pre-calculated and calibrated, and can be directly recalled during mode switching without real-time calculation. Simultaneously, the slit width, the output voltage of each electrode, and the operating status of the ion source components are adjusted, effectively reducing the mode switching time and ensuring that the switching time is controlled within a set time, meeting the requirements for online real-time switching during process operations.

The present application provides a kind of electrostatic deflection convergent energy analyzer, it has wide receiving angle and high two-dimensional convergent performance, can carry out imaging to two-dimensional real space image or emission angle distribution, and can carry out two-dimensional convergent and imaging under 90 ° deflection relative to the direction of incidence. One or more outer electrodes and multiple inner electrodes are arranged along the shape of two rotors formed on the inner side and outer side of common rotation axis. Among them, the inner surface shape of outer electrode is tapered, the diameter of which decreases towards both ends, and the outer surface shape of inner electrode is tapered, the diameter of which decreases towards both ends. Electron entrance hole and exit hole are formed on the outer electrode at both ends of the rotation axis respectively. Voltage for electron acceleration and deceleration is applied to outer electrode and inner electrode in proportion to the energy of incident electron. Voltage is applied to one or more electrodes except the inner electrode at both ends, which is twice or more than the converted acceleration voltage obtained by converting the energy of electron into acceleration voltage based on the potential of outer electrode where entrance hole is formed.

The invention relates to a multi-doped lanthanum bromide scintillation crystal and a preparation method thereof. The light-emitting non-uniformity of the head part and the tail part of the crystal is not more than 0.1%, the scintillation performance of the head part and the tail part of the crystal is consistent, the crystal quality is greatly improved, the application range of the crystal is widened, and the market prospect is wide. According to the preparation method disclosed by the embodiment of the invention, the preparation method of the multi-doped lanthanum bromide scintillation crystal in a secondary crystal growth mode by taking the crystal which is synthesized by a horizontal zone melting method and is free of surface and tail impurity layers as a raw material is provided for the first time, the operation is simple, the raw materials are easy to obtain, and the implementation of the whole preparation process is easy to realize. The problems of poor luminescence uniformity and the like caused by a component segregation phenomenon are avoided, the luminescence nonuniformity of the head part and the tail part of the crystal is improved to 0.07% from 1.12%, the energy resolution of the crystal is improved to 2.33% at 662 KeV from 2.94% at 662 KeV, and the quality of the crystal is greatly improved.

The present application relates to a kind of variable chamber time projection chamber of low-energy single-energy neutron energy measurement, low-pressure working gas is filled in sealed chamber inside;Polyethylene support column is installed in sealed chamber, and a plurality of mounting slots are provided on polyethylene support column;Multiple cathode plate support is fixed on the mounting slot of polyethylene support column, and the mounting slot position can be replaced along the direction of polyethylene support column, and the moving step of replacement is centimeter level, anode plate is arranged at the lower bottom plate of sealed chamber;Grid plate support is fixed on the mounting slot of polyethylene support column, and the mounting slot position can be replaced along the direction of polyethylene support column, and the moving step of replacement is millimeter level;Single-energy neutron and low-pressure working gas scatter to form electron-ion pair, and move to anode plate along the direction of electric field.By setting variable chamber time projection chamber, the spacing between grid plate and anode plate can be adjusted, the error of recoil nuclear angle is reduced, the energy resolution is improved, and the neutron energy measurement uncertainty can be reduced to within 10%.

The application relates to the technical field of semiconductor detector signal processing, and discloses a semiconductor detector signal processing method based on pixel diagonal pairing and double-path differential reading. The method comprises the following steps: acquiring a pixel array of a pixelated semiconductor detector; dividing the pixel array into a plurality of adjacent pixel modules; connecting two groups of diagonal pixels in each pixel module to form a first reading channel and a second reading channel; reading a first reading signal and a second reading signal; and performing spectral analysis on the two-path differential signals after shaping amplification and selecting the signal with a larger amplitude. Compared with the problem that the low-energy tailing, energy resolution and peak total ratio are reduced due to the small pixel effect of a large-pixel semiconductor detector in the prior art, the application can reduce the low-energy tailing, improve the energy resolution and the peak total ratio without significantly increasing the number of reading channels.

This invention provides a multichannel energy spectrum data communication method based on parity bits. The multichannel energy spectrum detection device sends energy spectrum data to a host computer in real time. During transmission, the 16-bit binary data is divided into two parts: the lower 8 bits are sent as a single byte using either odd or even parity, and the higher 8 bits are sent as a single byte using either even or odd parity. The host computer receives the energy spectrum data from the multichannel energy spectrum detection device and verifies it until all data is received. This invention utilizes serial communication principles, encoding the energy spectrum data uploaded in real time by the multichannel energy spectrum detection device using parity bits as flags. After receiving the data, the host computer judges and reassembles the data based on whether the parity check is incorrect, and the order of correct and incorrect parity checks, thus parsing out the corresponding energy spectrum data. This method is particularly suitable for measuring radioactive samples with high nuclear particle energy resolution and high activity.

The present application relates to a kind of digital pulse energy extraction methods based on multi-section pulse integration, including step 1, extracting digital signal, triggering filtering algorithm is used for the discrimination of signal;Step 2, according to the time of pulse arrival, determine the five-section / seven-section interval integral value of waveform sampling point recorded by firmware and two timestamp information;Step 3, according to the interval integral value and timestamp information in step 2, calculate baseline value;Step 4, according to the interval integral value and timestamp information in step 2 and baseline value in step 3, calculate pulse area.The algorithm is simplified to calculate the integral value of multi-section continuous pulse, which is convenient to realize on FPGA;The method based on five-section integration can solve baseline evaluation under high accumulation rate, and dead time is small;The method based on seven-section integration can improve the energy resolution when containing low-frequency noise.

The invention discloses an aluminum nitride detector with a full-vertical structure and a preparation method of the aluminum nitride detector. The aluminum nitride detector comprises an aluminum nitride substrate, a first semiconductor and an anode metal laminated layer which are arranged on the upper surface of the substrate, and a second semiconductor and a cathode metal laminated layer which are arranged on the lower surface of the substrate, ohmic contact electrodes are formed on the surfaces of the first semiconductor and the second semiconductor respectively, and mesa terminals are formed on the surfaces, not covered by the ohmic contact electrodes, of the first semiconductor and the second semiconductor and the upper surface and the lower surface of the aluminum nitride substrate in an etching mode. After bias voltage is applied to the full-vertical MSM structure, full collection of energy of high-energy particles is realized; the aluminum-gallium-nitrogen interface layers are introduced to the front surface and the back surface of the aluminum nitride substrate at the same time to realize excellent ohmic contact, so that the sensitivity and the energy collection rate of the aluminum nitride high-energy particle detector are improved; and the mesa terminal is prepared by etching the groove in the area outside the active area, so that electric leakage is reduced, and the energy resolution of the aluminum nitride high-energy particle detector is further improved.