An ultra high-resolution
radiation detector and method for fabrication thereof, has a
detector chip, comprising the so-called drift rings and an
amplifier integrated with the
diode component, centrally located n-type
anode on one surface, the
depletion region. The
detector chip has a circular
field of view, the
depletion region which also has a circular
field of view by
ion implanting symmetrical p-n junctions on the surface of the
radiation entrance side of the detector
chip, said centrally n-type
anode located on the opposite surface of the
depletion region, and its position is in the region which outer of the depletion region, said centrally n-type
anode was surrounded by a plurality of p-type drift
electrode rings, which have an gibbous circularity topology; wherein the focus of said p-type drift
electrode rings is the position of the anode, said FET (Field-Effect
Transistor) was integrated in the position of the detector's anode and directly coupled to the detector's anode. The p-type drift
electrode rings is a plurality of drift rings which have gibbous circularity topology, wherein the gibbous circularity topology is encircled by a majority of a large circularity and a small circularity, wherein the maximum of the depletion region is the opposite surface of the region encircled by the outermost p-type drift electrode ring.