19 results about "Semiconductor radiation detectors" patented technology

The invention discloses an aviation radiation dose global distribution real-time calculation system based on ground detection equipment, which belongs to the technical field of radiation detection and comprises a ground radiation detection module, a dose simulation module and a data correction module. The ground radiation detection module is used for continuously collecting ionizing radiation data of an atmospheric bottom layer in a calm state and a solar high-energy particle event so as to improve data precision and a signal-to-noise ratio under a weak dose, and the dose simulation module receives latitude and longitude, height and time parameters of an aviation flight path, and calculates a standard atmospheric model and a cosmic ray energy spectrum in combination with the standard atmospheric model and the cosmic ray energy spectrum. The data processing module is used for calculating theoretical dose rates and particle type distribution of different height levels based on a Monte Carlo method and outputting the theoretical dose rates and the particle type distribution, and the data correction module is used for dynamically correcting parameters and weights of simulation results by combining measured data based on a deep learning algorithm of deep learning, so that adaptive fusion of the simulation data and the measured data is realized; and the ground radiation detection module comprises a semiconductor radiation detector, a data acquisition and preprocessing unit, a remote control module and a network communication module. The system has the characteristics of high real-time performance and wide coverage range.

The invention discloses a wide-range neutron measurement method, and belongs to the technical field of neutron detection and measurement, and the method comprises the steps: selecting a wide bandgap semiconductor material, an electrode metal material, a neutron conversion material and a neutron conversion material coating method, obtaining a wide bandgap semiconductor radiation detector coated with the neutron conversion material, and taking the wide bandgap semiconductor radiation detector as a neutron detector; a neutron detector is connected with a pre-amplifier, the pre-amplifier is connected with a rear-end digital sampling circuit, the rear-end digital sampling circuit processes pulse waveforms output by the pre-amplifier, and digital pulse signals are output; processing the digital pulse signal by using a pulse counting method and a Campbell method in upper computer software to obtain a pulse counting rate value and a Campbell value, and calculating neutron fluence rates obtained by the two methods; and obtaining the neutron fluence rate as an output result by adopting different methods according to the size of the neutron fluence rate. According to the invention, a neutron fluence rate measurement system with a small size, high temperature resistance, radiation resistance and a wide range can be obtained, and real-time accurate measurement under the condition of large-range change of the neutron fluence rate is realized.

According to an example aspect of the present invention, there is provided semiconductor radiation detectors and photodetectors with a low amount of material in the radiation / photon entrance window.

Disclosed herein is a radiation detector (100), comprising: an electronics layer (120) comprising a first set of electrical contacts (118A) and a second set of electrical contacts (118B); a radiation absorbing layer (110) configured to absorb radiation; a semiconductor substrate (103), a portion of the semiconductor substrate (103) extending into the radiation absorbing layer (110) along its thickness direction, the portion forming a first set of electrodes (119A) and a second set of electrodes (119B); wherein the first set of electrodes (119A) and the second set of electrodes (119B) interdigitate with each other; wherein the semiconductor substrate (103) comprises a p-n junction separating the first set of electrodes (119A) from the second set of electrodes (119B); wherein the electronics layer (120) and the semiconductor substrate (103) are bonded such that the first set of electrodes (119A) is electrically connected to the first set of electrical contacts (118A), and the second set of electrodes (119B) is electrically connected to the second set of electrical contacts (118B).

Disclosed is a collimator protecting components of a semiconductor radiation detector assembly from excess radiation, including: a first plate defining an opening therethrough, the first plate being made of first material; zero or more intermediate plates each defining an opening therethrough, wherein each intermediate plate is made of respective second material having a higher atomic weight than the first material; a third plate that defines an opening therethrough, and wherein the third plate is made of third material having a higher atomic weight than the second material, wherein the zero or more intermediate plates are arranged between the first plate and the third plate to form a stack of plates so the respective atomic weight of the plates in the stack increases from the first plate towards the third plate and so the respective openings through the plates in the stack are substantially centered with respect to each other.

The utility model discloses a detection instrument with a warning structure, which comprises a detection instrument main body and a groove block, the top surface of the detection instrument main body is fixedly connected with a warning mechanism, and the warning mechanism comprises a storage battery, a semiconductor radiation detector main body and an alarm. The right side of the storage battery is electrically connected with a semiconductor radiation detector main body through a power line, the right side of the semiconductor radiation detector main body is electrically connected with an alarm through a power line, the groove blocks are fixedly connected to the periphery of the top surface of the detection instrument main body, and the top surfaces of the four groove blocks are clamped with a protection mechanism. And the protection mechanism comprises insertion blocks and protection shells, and the tops of the four insertion blocks are fixedly connected with a set of protection shells. According to the detection instrument with the warning structure, a worker is timely reminded that surrounding nuclear radiation exceeds the standard, certain safety is achieved, and the detection instrument main body can conveniently detect different positions while the detection instrument main body is conveniently installed and fixed.

The invention belongs to the technical field of semiconductor radiation detector front-end electronics. The invention provides a multi-channel analog front-end integrated circuit based on LDO derating power supply. According to the circuit disclosed by the embodiment of the invention, a special LDO (Low Dropout Regulator) is integrated in each independent channel, and the LDO directly supplies power to all analog front-end circuits in the channel; the key performance of the analog front-end circuit and the global bias circuit outside the channel is kept unchanged when the analog front-end circuit and the global bias circuit work under the slightly derated power supply voltage. By utilizing the characteristic that the LDO maintains the stability of the output voltage in a wide input voltage range, the power supply consistency of the multi-channel circuit is remarkably improved. In addition, independent LDO enabling control is integrated in the channels, independent power-on and power-off of the single channel can be controlled, and system-level power consumption management can be achieved conveniently. The channel consistency of the multi-channel analog front-end circuit is greatly improved, and an effective solution is provided for the power supply problem of a multi-channel analog front-end electronic system.

The invention discloses a method for improving the performance of a perovskite radiation detector and the perovskite radiation detector, and relates to the field of semiconductor radiation detectors. Comprising the steps that a first voltage is applied to first metal of the perovskite radiation detector, a second voltage is applied to second metal of the perovskite radiation detector, the voltage difference between the first voltage and the second voltage is hundred volts, the second voltage is larger than the first voltage, the duration of applying the voltage to the two ends of the metal is a first duration, the first duration is an hour-level duration, and the second duration is a second duration; wherein the first metal is a high work function metal, and the second metal is a low work function metal. According to the method for improving the performance of the perovskite radiation detector, the dark current of the detector is effectively reduced, the carrier collection efficiency of the detector is improved, the energy resolution of the detector is improved, and the yield of the high-performance perovskite radiation detector is improved.

The invention relates to an X-ray detector based on a carbon-doped sapphire crystal, and belongs to the technical field of X-ray direct detection and semiconductor radiation detectors. The carbon-doped sapphire crystal grown based on an edge-defined film-fed growth method shows semiconductor characteristics for direct detection, efficient collection of X-ray photon-generated carriers is realized through a planar electrode structure, and the sensitivity far higher than that of a traditional silicon-based detector is obtained. The wide bandgap oxide crystal has remarkable advantages in the aspects of irradiation resistance, high-temperature stability, detection efficiency and cost controllability, and the application boundary of the wide bandgap oxide crystal in a radiation detector is expanded.

Provided are a reset-type charge-sensitive amplifying circuit, and a method for amplifying and resetting a data signal. The reset-type charge-sensitive amplifying circuit includes a signal input buffer module, a signal output amplifying module, and a reset pulse signal generation module. The signal input buffer module is connected to the signal output amplifying module, a first terminal of the signal input buffer unit is electrically connected to a semiconductor radiation detector, and a second terminal of the signal input buffer unit is electrically connected to a voltage bias unit. The signal output amplifying module is connected to the reset pulse signal generation module. The reset pulse signal generation module includes a voltage comparison unit, a reset pulse width modulation unit, and a reset pulse amplifying unit.

This invention relates to the field of room-temperature semiconductor radiation detector materials and device fabrication technology, and discloses a method for growing CsPbBr3 single crystals using a simple solvent system. The invention employs a simple mixed organic solvent system composed of dimethyl sulfoxide (DMSO) and n-butanol to grow CsPbBr3 single crystals using a reverse-temperature crystallization method. This DMSO + n-butanol solvent system can broaden the reverse-temperature range of CsPbBr3, enabling stable crystal growth at lower temperatures and reducing the crystal growth temperature. The n-butanol additive can also regulate the dissolution-coordination balance in the precursor solution, making the crystal growth process smoother, reducing crystal defect density, and improving crystal quality. Furthermore, compared to crystal growth using other complex solvent systems, the simple DMSO + n-butanol solvent system used in this invention has a clear composition and is easy to operate, which is beneficial for improving the stability and repeatability of crystal growth. The CsPbBr3 single crystals prepared by this method have good crystal quality and electrical properties, and can be applied in optoelectronic devices such as room-temperature semiconductor radiation detectors.

Provided are a reset-type charge-sensitive amplifying circuit, and a method for amplifying and resetting a data signal. The reset-type charge-sensitive amplifying circuit includes a signal input buffer module, a signal output amplifying module, and a reset pulse signal generation module. The signal input buffer module is connected to the signal output amplifying module, a first terminal of the signal input buffer unit is electrically connected to a semiconductor radiation detector, and a second terminal of the signal input buffer unit is electrically connected to a voltage bias unit. The signal output amplifying module is connected to the reset pulse signal generation module. The reset pulse signal generation module includes a voltage comparison unit, a reset pulse width modulation unit, and a reset pulse amplifying unit.

A graphene / 4H-SiC alpha particle detector and a preparation method thereof, and relate to the technical field of semiconductor radiation detectors. The detector comprises: a 4H-SiC substrate, and an n-type epitaxial layer located on the upper surface of the 4H-SiC substrate; an ohmic contact electrode formed on the lower surface of the 4H-SiC substrate; and a Schottky incident window electrode formed on the upper surface of the n-type epitaxial layer; wherein the Schottky incident window electrode is composed of graphene with an atomic level thickness, and the graphene forms a Schottky contact with the n-type epitaxial layer. The atomic level thickness of graphene is used to suppress the "dead layer" effect of the incident window, thereby improving the energy resolution of the detector.

The invention relates to the field of semiconductor radiation detectors, and discloses a layered hybrid halide-cellulose oriented composite film and a preparation method and application thereof. The oriented composite membrane is formed by oriented growth of micro-nano-scale layered hybrid halide crystals on a cellulose membrane; the preparation method comprises the following steps: proportionally adding the raw materials into an organic solvent, heating and dissolving at a constant temperature, putting into a cellulose substrate membrane, fully soaking, drying the cellulose membrane which fully absorbs the solution at a low temperature, and heating at a high temperature under negative pressure to obtain the layered hybrid halide-cellulose composite membrane. According to the method, evaporation is controlled by adopting specific temperature and vacuum degree in the process, so that the large-breadth specific oriented composite film is prepared, and the semiconductor radiation detector prepared based on the oriented composite film can realize high-performance tomography radiation imaging application.

Disclosed is a header for a radiation detector assembly provided for mounting a detector head into an enclosure formed by the header and a detector can to form the radiation detector assembly. The detector head includes a semiconductor radiation detector arranged on a first side of a substrate and a thermoelectric cooler, TEC, arranged on a second side of the substrate, the header including: a base plate having a first side for mounting the TEC and a second side with an attachment mechanism for attaching the radiation detector assembly to a radiation-detecting appliance; contact pins that provide electrical coupling through the base plate protruding from the first side of the base plate to substantially define a rim for accommodating the TEC within the rim; and a draining outlet with an opening through the base plate between its first and second sides transferring a gas to and / or from the enclosure.

The invention discloses a low-leakage-current cadmium zinc telluride or cadmium telluride radiation detector and a surface leakage current suppression method, and relates to the technical field of cadmium zinc telluride or cadmium telluride semiconductor radiation detectors. The radiation detector comprises a cadmium zinc telluride or cadmium telluride semiconductor material of a ray absorption layer, an electron selective contact layer, a hole selective contact layer and a passivation layer. The electron selective contact layer serves as a positive electrode of the device, and the hole selective contact layer serves as a negative electrode of the device; the passivation layers are located between the positive electrodes and between the positive electrodes and the negative electrodes and are located on the surface of the semiconductor material; the electron selective contact layer is made of a high-work-function metal material; the hole selective contact layer is composed of a Te / TeO2 layer on the metal surface, a diffusion layer and a metal material. According to the semiconductor radiation detector prepared by the invention, the surface leakage current is effectively inhibited according to the control of the selective contact layer and the preparation of the passivation layer, and the performance of the detector is improved.

The invention provides a semiconductor radiation detector electrical property co-simulation method. The method comprises the following steps: establishing a device model of a semiconductor radiation detector; aiming at a given incident particle, simulating a transportation process of the incident particle in a semiconductor material by utilizing a first simulation tool so as to obtain ionization energy loss distribution along a transportation path of the incident particle; performing data conversion and structure reconstruction on the ionization energy loss distribution: converting the ionization energy loss distribution from an energy loss rate unit to a generated charge quantity unit within a unit distance based on the average ionization energy of the semiconductor material; discretizing the generated charge quantity which is obtained after conversion and continuously changes along the transport path into a step-shaped data structure composed of a plurality of space segments; taking the stepped data structure as input, and performing single-particle transient analysis on the device model by using a second simulation tool; and obtaining the electrical output characteristics of the semiconductor radiation detector. According to the invention, accurate simulation of the whole process from particle incidence to electric signal output is realized.

The invention discloses a CsPbBr3 material purification method based on a solution method, and belongs to the technical field of semiconductor material preparation. According to the method, firstly, CsBr is purified through an anti-solvent recrystallization technology, and impurity elements such as Li, Na, K, Rb, P, S, I and Cl are effectively removed; meanwhile, PbBr2 is purified by adopting an ultrasonic water washing method, so that the content of elements such as Ca and Tl is remarkably reduced; then CsPbBr3 is purified through a dimethyl sulfoxide-based inverse temperature crystallization method, and impurity elements such as Li, Mg, Ca, Sr, Ba, B, Al, Si, Se, Tl, Bi, Cr, Mn, Fe, Ni and Cu are successfully removed; finally, the CsPbBr3 raw material is further purified through a cooling crystallization method based on a 48wt% HBr aqueous solution, and residues of K, Rb, Ba, Zn, Tl, Bi, P, S, Cl and I elements are remarkably reduced. The method is simple in steps and controllable in process, and a feasible technical scheme worthy of popularization is provided for preparing the high-purity semiconductor radiation detector.

A radiation detector (100) comprising: a radiation absorbing layer (110) configured to absorb radiation; a discrete plurality of first electrodes (119A) on a surface of the radiation absorbing layer (110); a second electrode (119B) on the surface of the radiation absorbing layer (110); wherein each of the plurality of first electrodes (119A) is surrounded by a second electrode (119B); wherein the plurality of first electrodes (119A) do not extend into the radiation absorbing layer (110), and the second electrodes (119B) do not extend into the radiation absorbing layer (110).