2 results about "Semiconductor radiation detectors" patented technology

This invention relates to the field of room-temperature semiconductor radiation detector materials and device fabrication technology, and discloses a method for growing CsPbBr3 single crystals using a simple solvent system. The invention employs a simple mixed organic solvent system composed of dimethyl sulfoxide (DMSO) and n-butanol to grow CsPbBr3 single crystals using a reverse-temperature crystallization method. This DMSO + n-butanol solvent system can broaden the reverse-temperature range of CsPbBr3, enabling stable crystal growth at lower temperatures and reducing the crystal growth temperature. The n-butanol additive can also regulate the dissolution-coordination balance in the precursor solution, making the crystal growth process smoother, reducing crystal defect density, and improving crystal quality. Furthermore, compared to crystal growth using other complex solvent systems, the simple DMSO + n-butanol solvent system used in this invention has a clear composition and is easy to operate, which is beneficial for improving the stability and repeatability of crystal growth. The CsPbBr3 single crystals prepared by this method have good crystal quality and electrical properties, and can be applied in optoelectronic devices such as room-temperature semiconductor radiation detectors.

A graphene / 4H-SiC alpha particle detector and a preparation method thereof, and relate to the technical field of semiconductor radiation detectors. The detector comprises: a 4H-SiC substrate, and an n-type epitaxial layer located on the upper surface of the 4H-SiC substrate; an ohmic contact electrode formed on the lower surface of the 4H-SiC substrate; and a Schottky incident window electrode formed on the upper surface of the n-type epitaxial layer; wherein the Schottky incident window electrode is composed of graphene with an atomic level thickness, and the graphene forms a Schottky contact with the n-type epitaxial layer. The atomic level thickness of graphene is used to suppress the "dead layer" effect of the incident window, thereby improving the energy resolution of the detector.