168 results about "Ionization energy" patented technology

An apparatus for plasma treatment of a non-conductive hollow substrate, including a plurality of ionization energy sources disposed adjacent to each other all along the part of the substrate to be treated. The apparatus also includes a processor to sequentially power the plurality of ionization energy sources from a radio frequency power source. Each ionization energy source includes two parts sandwiching the substrate. The ionization energy sources can be capacitively or inductively coupled plasma sources.

A light-emitting device comprises an active region configured to generate light in response to injected charge, and an n-type material layer and a p-type material layer, wherein at least one of the n-type material layer and the p-type material layer is doped with at least two dopants, at least one of the dopants having an ionization energy higher than the ionization energy level of the other dopant.

A support electrode (2) and a counter electrode (16) constituting parallel plate electrodes are disposed in a process vessel (1). A substrate (W) with an organic material film formed thereon is supported by the support electrode (2). A high-frequency power of a frequency of 40 MHz or above for generating the plasma is applied to the support electrode (2), so that a high-frequency electric field is formed between the support electrode (2) and the counter electrode (16). A process gas is supplied into the process vessel (1) to generate plasma of the process gas by the high-frequency electric field. The organic material film on the substrate (W) is etched with the plasma, with an organic material film serving as a mask. The process gas includes an ionization accelerating gas, such as Ar, that is ionized from a ground state or metastable state with an ionization energy of 10 eV or below and has a maximum ionization cross-section of 2×10¹⁶ cm² or above.

The present invention provides a thin film transistor realizing improved reliability by suppressing deterioration in electric characteristics. The thin film transistor includes an oxide semiconductor film forming a channel; a gate electrode disposed on one side of the oxide semiconductor film via a gate insulating film; and a pair of electrodes formed as a source electrode and a drain electrode in contact with the oxide semiconductor film and obtained by stacking at least first and second metal layers in order from the side of the oxide semiconductor film The first metal layer is made of a metal having ionization energy equal to or higher than molybdenum (Mo), a metal having oxygen barrier property, or a nitride or a silicon nitride of the metal having oxygen barrier property.

A pre-ionized medium created by a capillary discharge results in more efficient use of laser energy in high-order harmonic generation (HHG) from ions. It extends the cutoff photon energy, and reduces the distortion of the laser pulse as it propagates down the waveguide. The observed enhancements result from a combination of reduced ionization energy loss and reduced ionization-induced defocusing of the driving laser as well as waveguiding of the driving laser pulse. The discharge plasma also provides a means to spectrally tune the harmonics by tailoring the initial level of ionization of the medium.

Techniques for plasma processing a substrate are disclosed, In one particular exemplary embodiment, the tech Pique may be realized, with a method comprising introducing a feed gas proximate to a plasma source, whore the feed gas may comprise a first and second species, where the first and second species have different ionization energies; providing a multi-level RF power waveform to the plasma source, where the multi-level RF power waveform has at least a first power level during and a second power level during a second pulse duration where the second power level may be different from the first power level; ionizing the first species of the feed gas during the first pulse duration; ionizing the second species during the second pulse duration; and providing: a bias to the; substrate during the first poise duration.

The invention relates to a method for identifying and detecting halogenated hydrocarbons, which is characterized by using vacuum ultraviolet as the ionization source of ion mobility spectrometry, adopting the mode of positive-negative ion switching, adopting the principle of photo ionization in the positive ion mode and adopting the principle of photo-electric reflection in the negative ion mode. Being used for detecting halogenated hydrocarbons, the method can widen the type of the compounds measured by the ion mobility spectrometry, greatly improve the capabilities of the ion mobility spectrometry in rapidly identifying and analyzing the samples and simultaneously improve the sensitivity of the ion mobility spectrometry to the compounds with ionization energy lower than that of the vacuum ultraviolet in the negative ion mode.

The invention relates to a laser stirring friction welding method which includes a laser beam, a welding tool and a welded object. The welding tool at least comprises a stirring needle, a shaft shoulder, radiating fins and a hollow inner cavity. During welding, the stirring needle is inserted into the welded object to rotate and advance along a welding gap, the laser beam heats the stirring needle through the hollow inner cavity of the welding tool, and the stirring needle absorbs optical energy of the laser beam, converts the optical energy into heat energy instantaneously and transfers the heat energy to the welded object to conduct welding. When the laser beam heats the stirring needle through the hollow inner cavity of the welding tool, the hollow inner cavity is filled with protection gas which is helium, and the helium is high ionization energy helium. By means of the method, the problem that a micro-size stirring tool used in traditional stirring friction welding is insufficient in heat production is solved, and welding quality and stability of laser direct welding of thin wall aluminum alloy are improved.

The invention discloses an LED epitaxial wafer diffused through Mg, a growing method and an LED structure. The LED epitaxial wafer structurally comprises a substrate, a GaN buffering layer, an undoped GaN layer, an n-type GaN layer, a multi-quantum well layer and a P-type AlGaN layer in sequence from bottom to top. A P-type GaN layer doped with Mg in a gradually-changing mode is arranged on the P-type AlGaN layer and is a GaN layer processed through Mg diffusion. The invention further provides the LED structure. The LED epitaxial wafer has the advantages that P-type GaN doped with the Mg in the gradually-changing mode stops growing after growing out a small section, a great deal of the Mg is introduced for carrying out Mg diffusion processing on the front section of the P-type GaN, the Ga position is better replaced by the Mg through the diffusion mode, Mg-H keys are reduced, Mg atoms of filling types are reduced, and therefore most merged Mg atoms are located at the Ga position; moreover, the proportion of the Mg atoms located at the Ga position is increased, and the proportion of the Mg atoms low in ionization energy is increased.

The invention relates to an ionization source, in particular to a composite ionization source which comprises a VUV single-photon ionization source based on radio-frequency voltage discharge and a chemical ionization source obtained by utilizing photoelectron ionization reagent gas in the photoelectric effect. The composite ionization source comprises a radio-frequency VUV source, an ion transmission optical system and an ion source cavity. An ion repulsing electrode, an ion focusing electrode and a difference interface electrode plate are sequentially arranged in the VUV source emergent direction of radio-frequency discharge, the three electrodes are all round sheet electrodes with round holes in the centers, and the three electrodes are spaced through insulation pads and are coaxially arranged in parallel. The VUV light beam of the radio-frequency voltage discharge and coaxial light beams of all the round sheet electrodes penetrate through the center holes of all the electrodes in the axis direction, and finally the beams are irradiated on the surface of the difference interface electrode plate. Chemical ionization is acted on the photoelectrons after reagent gas is added. Soft ionization of sample molecules with ionization energy higher than the photon energy is achieved, the range of analyzable samples is enlarged, and the detection sensitivity of instruments is improved.

The present invention relates to an improved composition for ion implantation. The composition comprises a dopant source and an assistant species wherein the assistant species in combination with the dopant gas produces a beam current of the desired dopant ion. The criteria for selecting the assistant species is based on the combination of the following properties: ionization energy, total ionization cross sections, bond dissociation energy to ionization energy ratio, and a certain composition.

The invention discloses a novel light-operated light emitting diode based on nano material. The novel light-operated light emitting diode comprises a transparent conductive substrate, a nano oxide layer, a hole transmission layer, a light emitting layer, an electron transmission layer and a metal electrode, wherein the conduction property of the nano oxide can be changed upon illumination. The light-operated light emitting diode can be prepared through a solution method, so as to have the advantages of low manufacture cost and convenience for large scale production; before illumination, the high ionization energy of the nano oxide prevent injection of holes, so that the brightness of the light emitting diode is low; after illumination, due to the photodoping effect of the nano oxide layer, the conduction property of the nano oxide layer is greatly increased, so that the holes go through the highly conductive nano oxide and are injected into illumination layer, the illumination brightness of the device is greatly increased, the light-operation of the light emitting diode is realized, and the ON/OFF ratio of the brightness and the currency density before and after the illumination are 200 and 10,000 respectively.

The invention relates to mass spectrometry instrument, and particularly to a composite ionization source based on vacuum ultraviolet light ionization and atmospheric pressure ionization. The composite ionization source based on vacuum ultraviolet light ionization and atmospheric pressure ionization comprises a vacuum ultraviolet light source, an ionization chamber cavity, an ion funnel and an atmospheric pressure ionization source; a sample gas capillary tube connector, a vacuum gauge connector and a mechanical vacuum pump extraction opening are formed in the wall of the ionization chamber cavity. A direct voltage and a radio-frequency voltage are applied to the ion funnel, so that ions which are not in the axis can be focused on the axis, and the ions are transferred into a mass analyzer below the ion funnel to be analyzed. According to the composite ionization source based on vacuum ultraviolet light ionization and atmospheric pressure ionization, the vacuum ultraviolet light source can ionize polar molecules and nonpolar molecules, the atmospheric pressure ionization source can ionize compounds with the ionization energy higher than the photon energy of vacuum ultraviolet light, and the range of ionizable compounds is widened; in addition, after sample molecules which are not ionized in the atmospheric pressure ionization source enter the ionization chamber cavity, secondary ionization can be conducted on the sample molecules through the vacuum ultraviolet light, and the ionization efficiency and the detection sensitivity are improved.

Provided are a polymer containing a thiophene unit and a thienylenevinylene unit, and an organic field effect transistor and an organic solar cell containing the polymer. The film may be formed by coating a substrate with a polymer containing a thiophene unit and a thienylenevinylene unit using a solution process. Therefore, the production cost may be reduced and a large-scale device may be suitably manufactured since there is no need for an expensive vacuum system to form films. Also, the polymer according to one embodiment of the present invention containing a thiophene unit and a thienylenevinylene unit has very excellent flatness since the thiophene unit is continuously coupled with a vinyl group having excellent flatness. Therefore, the polymer may be useful in further improving the charge mobility since it has high crystallinity caused by the improved ordering property between molecules. Such crystallinity may be further improved by the heat treatment. In addition, the organic compound according to one embodiment of the present invention containing a thienylenevinylene unit may have high oxidative stability because of its high ionization energy.

The invention discloses a method for measuring attosecond X-ray pulses and application of the method. According to the method disclosed by the invention, each measured related phase of a photoelectron is determined by using a parameterized computing formula, and the shape of a pulse and a concrete time structure are rebuilt through one step by using an analytical photoelectron spectrum unscrambling technology; and the time domain characteristics of the attosecond X-ray pulses can be rebuilt from each measured photoelectron spectrum without a large amount of time resolution measurements of a photoelectron spectrum and without a redundant iterative computation and an experimental data fitting process. The time uncertainty of a pulse measurement result is computed from energy bandwidth values of the pulses by using the parameterized formula. Because a direct relation among attosecond pulse time characteristics, important laser parameters (such as peak strength, electric field envelope shape, phase, carrier-envelope phase and the like), atomic or molecular ionization power and the photoelectron spectrum is established by a transformation equation, the method can be used for computing unknown parameters from each known parameter value.

A plasma accelerating apparatus and a plasma processing system, which efficiently elevate a drift velocity of a plasma beam and are simple to manufacture and simple in construction. A channel includes an outlet port opening at an end of the channel. A gas supply portion supplies a gas in the channel. A plasma generator provides ionization energy to the gas in the channel to generate a plasma beam. A plasma accelerating portion includes a plurality of grids transversely arranged spaced apart from each other by a predetermined distance in the channel for accelerating the plasma beam generated by the plasma generator to the outlet port of the channel with an electric field. The plasma accelerating apparatus and the plasma processing system elevate a drift velocity of the plasma beam more efficiently than conventional accelerating apparatuses that use an electromagnetic force induced by a magnetic field and a secondary current.

The invention relates to an atmosphere suspended particulate matter mass concentration detector based on the national environmental protection HJ618-2011 standard, wherein the atmosphere suspended particulate matter mass concentration detector is suitable for detection of mass concentration of particulate matters from PM2.5 to less than PM 10 in an air environment. In the prior art, PM2.5 fine particles are difficultly interdicted on filtration membranes with the existing quartz, mixed cellulose and other organic filtration membranes; and the oscillation frequency of the existing electronic oscillation balance method is affected by excessive thick dust accumulation, and the filtration membrane weight method has disadvantages of complex operation and difficult calibration accuracy. According to the present invention, based on the aerosol characteristic of the less than PM 10 particulate matters, particularly the PM2.5 fine particulate matters in the ambient air, a suitable microgram scale of a beta-source with a nickel-63 low-energy short-range is selected, the ionization energy absorption principle can be completed provided when the electron is loaded, and the atomic nucleus electron of the dust matter is fixed; and compared with the manual filtration membrane weight method, the method of the present invention can achieve the high accuracy requirement.

A plasma accelerating apparatus and a plasma processing system having the same are provided. The apparatus includes a circular channel comprising an inner wall, an outer wall, and an end wall connected to an end of the inner wall and the outer wall to form an outlet port at the other ends of the inner and outer walls; a gas supply portion to supply a gas to an inside of the channel; and a plasma generating and accelerating portion to supply ionization energy to the gas inside the channel to generate a plasma beam, and to accelerate the generated plasma beam toward the outlet port, wherein one of the inner wall and outer wall of the channel is inclined at an angle so that the other end of the wall is located closer to a center of the plasma accelerating apparatus.

The invention discloses a growth method of p-type AlGaN semiconductor material, the semiconductor material is grown by a technical method of adding a gallium source through step into a surfactant-assisted magnesium delta doping, Ammonia gas or dimethylhydrazine nitrogen is used as group V nitrogen source in the growth of p-type AlGaN semiconductor material, Trimethylgallium or triethylgallium is used as a Group III gallium source, trimethylaluminum or triethylaluminum is used as a Group III aluminum source, trimethylindium or triethylindium is used as a Group III indium source, collectively referred to as a Group III metal source, and trimethylindium or triethylindium is also used as a surfactant in the acceptor doping layer. The method of the invention can improve crystal quality, increase doping concentration of acceptor doped magnesium atoms, reduce acceptor ionization energy by enhancing valence band modulation, and further suppress self-compensation effect, thereby obtaining p-type AlGaN semiconductor material with high crystal quality and high hole concentration.

A photoionization detector comprising multiple ionization cells for detecting the presence of chemical compounds in multiple fluid samples. The photoionization detector uses a single source of ultraviolet (UV) radiation to emit high energy photons into at least two ionization cells. Each ionization cell comprises at least one fluid inlet and at least one fluid outlet. Independent samples of fluid can be introduced into each cell and exposed to the UV radiation such that any molecules with an ionization energy lower that the energy of the photons are ionized. Each ionization cell also comprises a set of at least two electrodes arranged to generate an electric field such that ionized molecules are attracted to the electrode at lower voltage potential resulting in an electrical current.

The invention discloses a method and equipment for rapidly preparing a diamond-like carbon film. The plasma is bounded in a specific area by employing a radio frequency hollow cathode effect and is merged in a negative glow area, so that the gas ionization rate is doubled; meanwhile, the electrons are bounded between electrodes in the radio frequency glow discharge process and move back and forth in the discharge space, and the frequency of colliding with gas molecule is increased, so that the ionization capacity is obviously improved; and therefore, the density and energy of plasma are improved, the deposition rate and quality of the film are improved, the production efficiency is obviously improved, the product cost is reduced, and industrial production is easily realized.

The invention provides a high-brightness GaN-based light emitting diode epitaxial growth method. The growth method comprises the following step of dividing into 2 layers, namely a high-temperature P-layer GaN layer (Hp-1) and a high-temperature P-layer GaN layer (Hp-2) for growth in the process of growing a P-layer GaN layer at high temperature. In the high-temperature P-layer GaN, Mg doping adopts uneven growth, and In element doping is contained in the Mg uneven doping growth process, the compensation effect is reduced due to the optimized uneven Mg doping growth method under the low In component condition, the carrier concentration is improved, the formation of P-GaN dislocation is effectively inhibited, the crystal quality is improved, and the service life of a device is improved. Meanwhile, the ionization energy of Mg in the InGaN material is lower than that of the Mg in the GaN, so a higher hole concentration is obtained, the radiation lighting efficiency is improved and the high-brightness light emitting diode can be obtained.

The invention provides a second-order differential flame emission spectrometer. The flame emission spectrometer changes a flame atomization temperature by regulating an oxygen gas flow of oxygen-rich air to meet the requirements of elements different in ionization energy for different atomization temperatures, and generates a characteristic spectral line with an extremely low flame background interference; and adopts the automatic scanning second-order differential precise grating monochromator technology, and can automatically subtract various background interferences near the characteristic spectral line of to-be-analyzed elements to obtain a second-order derivative spectrum. The obtained second-order derivative spectrum is converted into a frequency-modulated alternating-current signal by a photomultiplier, the frequency-modulated alternating-current signal is processed by a micro-current lock-in amplifier to obtain a direct-current analog signal having good linear relationship with the analyzed elements, the direct-current analog signal is subjected to data processing by a microprocessor to obtain a digital signal, and the digital signal is transmitted to a computer data workstation for storing, processing and printing, and realizing control on a spectrometer operating process. The invention is simple in operation, high in sensitivity and good in stability, and the detection limit of sodium ion, potassium ion, iron element and copper element is smaller than 0.1mug/L, which reaches the international leading level.

The invention relates to a novel high-efficiency thermionic power supply. The novel high-efficiency thermionic power supply is characterized in that an emitting electrode (1) is made of thermionic emitting material of which the melting point is higher than the temperature of a high-temperature heat source (7); a receiving electrode (2) is made of non-thermionic emitting material of which the melting point is higher than the temperature of the high-temperature heat source (7); the emitting electrode (1) and the receiving electrode (2) are arranged in a heat-insulating casing (6) and are located in a same high-temperature heat chamber (4); the emitting electrode (1) and the receiving electrode (2) are connected with an electric pump direct current power supply (11) in series through a lead (9) and a lead (10); the thermionic emission of the emitting electrode (1) is caused by heating the emitting electrode (1) through the high-temperature heat source (7), so that the electromotive force of the receiving electrode (2) is higher than the electromotive force of the emitting electrode (1) and further extra power is provided for thermions to move to the receiving electrode (2); the thermions fly to the receiving electrode (2) under the push of the driving electromotive force of the receiving electrode (2) and an induced electric field of the electric pump direct current power supply (11), pass through a clearance between the two electrodes, and are captured on the receiving electrode (2). According to the novel high-efficiency thermionic power supply, various energy sources, such as nuclear energy, heat energy and light energy, can be converted into ionization energy as much as possible.

The invention relates to a mass spectrometry device and particularly relates to a composite ionization source for vacuum ultraviolet (uv) light ionization and chemical ionization on the basis of increase of an ion tunnel radio frequency electric field. The composite ionization source comprises a vacuum uv light source and an ionization room chamber, multiple transmission electrodes and ion funnels are coaxially arranged with intervals in an ionization room, the transmission electrode far from an uv light inlet is pasted with a metal grid mesh, uv light emitted by the vacuum uv light source irradiates on the metal grid mesh to generate photoelectrons, and a radio frequency voltage is exerted on the ion funnel. The composite ionization source is on the basis of vacuum uv light ionization, a photoelectron ionization reagent gas is utilized, a sample is facilitated by reagent ions to generate chemical ionization, efficiency of chemical ionization triggered by the photoelectrons can be improved through the ion funnel radio frequency electric field, in combination with the ion focusing function of the ion funnel, detection sensitivity is improved, moreover, compounds of which ionization energy is greater than vacuum uv light photon energy can be ionized through chemical ionization, and the ionizable compound scope is expanded.

The present invention provides an inorganic scintillator including a matrix material comprising a metal oxide, and a luminescence center made of Ce contained in the matrix material, the inorganic scintillator being adapted to scintillate in response to a radiation; wherein the matrix material further comprises a dopant having a tetravalent ionization energy I [kJ·mol⁻¹] satisfying the condition represented by the following expression (1):

3000≦I≦3500   (1)