20 results about "Ionization energy" patented technology

The invention relates to a carbon ion radiotherapy relative biological effect prediction method and device, and the method comprises the steps: obtaining carbon ion RBE prediction input data comprising carbon ion physical parameters, tumor cell parameters and equivalent W value database data, enabling the input information to adapt to different tumor characteristics, and enabling the subsequent prediction to be more fit with a specific treatment scene; the input data is substituted into a target RBE prediction model which is constructed based on sodium dosimetry and optimized by an average ionization energy correction factor for processing, on one hand, an equivalent W value database provides corrected basic data, and in combination with a model core of the sodium dosimetry, prediction is closer to the actual action effect of carbon ions from the mechanism level, experience errors are reduced, and the prediction efficiency is improved. And on the other hand, the dual design of nanodosimetry and average ionization energy correction can also accurately associate the physical effect and the biological effect of the carbon ions, and it is guaranteed that the output target carbon ion RBE predicted value is more accurate.

The application discloses a high-energy and few-cycle blue light laser generation method and device, and belongs to the technical field of ultrafast laser, wherein the method comprises the following steps: adopting a nonlinear crystal to double frequency of a base frequency pulse after compression, and performing at least twice pulse width compression on the obtained double frequency pulse to obtain high-energy and few-cycle blue light laser; wherein, the double frequency process and the pulse width compression process are both performed in a cavity filled with helium; the pulse width compression process is performed through spectral broadening of a solid sheet; since the helium has extremely low linear dispersion and nonlinear coefficient and extremely high ionization energy, not only the solid sheet damage can be avoided, and a part of spectral broadening is contributed, but also an environment close to vacuum can be provided in terms of dispersion and laser-induced ionization, so that the dispersion compensation of the double frequency pulse is easier, and the energy loss caused by gas ionization and the input energy limitation are avoided, and higher output energy is allowed; the problem that the high-energy and ultra-short pulse width blue light pulse is difficult to be realized simultaneously at present is effectively solved.

The invention discloses a method for detecting the content of elements in alloy or ore by using an ICP emission spectrometer, and belongs to the technical field of spectral analysis. The invention solves the problems of inaccurate measurement result caused by easy ionization element interference and spectral background drift when the existing ICP spectrometry is used for analyzing a complex matrix sample, and the problems of complicated process and low efficiency of the traditional chemical analysis method, and provides a dynamic internal standard introduction technology and combination of low ionization energy and high ionization energy internal standard elements. According to the method, the matrix effect and spectrum background interference can be corrected in real time, the detection accuracy and stability are remarkably improved, meanwhile, through real-time quality monitoring and pre-training of an interference correction model, the detection efficiency and reliability are improved, powerful technical support is provided for high-precision detection of the content of elements in alloy and ore, and finally, the method has good application prospects. The element content is calculated by comparing the corrected net strength of the to-be-detected element with the pre-established standard curve, so that the accuracy and the reliability of a detection result can be remarkably improved.

This electrode substrate comprises a substrate, an electrode disposed on the substrate, and a coating that covers a portion of the surface of the electrode. The electrode has a first metal atom. The coating includes a first coating having a second metal atom that has an ionization energy lower than that of the first metal atom.

This suppresses plasma leakage, which occurs in plasma processing equipment where plasma is present in the exhaust space. [Solution] A plasma processing apparatus comprising a chamber, a substrate support portion provided in the chamber, a gas supply port for supplying a processing gas into the chamber, and a gas outlet to which an exhaust portion for exhausting the chamber is connected, wherein the space within the chamber includes a first space where the substrate is processed and a second space to which the exhaust portion is connected, and further comprises a gas inlet for introducing a predetermined gas with a higher ionization energy than the processing gas into the second space.

The application belongs to the technical field of CrMo high strength and toughness steel design, and discloses a design method of CrMo high strength and toughness steel based on atomic physical feature coupling machine learning and a preparation method thereof. By introducing atomic scale physical and chemical features (especially "weighted variance" features) as key inputs of machine learning, the application accurately designs a CrMo alloy steel which still maintains excellent plasticity under ultrahigh strength (>1400MPa) or maintains high strength under high toughness. The application first introduces atomic physical and chemical feature parameters such as "ionization energy variance" into steel design, reveals the strengthening mechanism at the electron level, avoids blind component trial and error, and significantly reduces the research and development cost.

The application discloses a kind of self-adaptive voltage stabilizing control method and system of ion source power supply, belong to power electronics technical field, including, step 1, obtain the gas ionization energy analog voltage value in the first microsecond of the rising edge of ignition trigger signal, gas pressure analog voltage value, set power analog voltage value, form three-dimensional feature vector;Step 2, the three-dimensional feature vector is non-linearly mapped into jump amplitude, jump time constant and steady-state value after jump, and the pre-compensation coefficient is calculated according to jump amplitude and jump time constant;Step 3, obtain the instantaneous rate of change of feedback current;The application can realize by capturing the analog voltage value corresponding to gas ionization energy, gas pressure, set power in the first microsecond of the rising edge of ignition trigger signal and forming three-dimensional feature vector, load jump parameter is obtained by non-linear mapping, solve the problem that traditional control cannot adapt to load microsecond-level nonlinear mutation, improve control response real-time.

The invention discloses a basic nickel carbonate impurity element detection method and system, and belongs to the technical field of impurity detection.The basic nickel carbonate impurity element detection method is characterized by comprising the steps that the concentration of a nickel matrix is obtained, corrected physical and chemical parameters are obtained according to the concentration of the nickel matrix and a static physical and chemical parameter library, and the physical and chemical parameters comprise ionization energy, a complexing constant and a volatilization coefficient; the concentration of the nickel matrix is obtained according to a to-be-detected solution, and the to-be-detected solution is obtained by digesting an original basic nickel carbonate sample; obtaining an enhanced signal according to the characteristic peak shape template and the solution to be detected; according to the method, the physical and chemical parameters of the impurities are dynamically corrected according to the actual nickel matrix concentration, the parameter mismatch error caused by matrix fluctuation is eliminated, the signal response benchmark is unified through dynamic valence correction, nonlinear quantitative modeling and digestion loss compensation are matched, and the concentration corresponding to each impurity element is obtained. And accurate prediction of the impurity concentration is realized.

A water purification device of the type comprising a unit configured to receive visible radiation, in particular solar radiation, and to convert the visible radiation into electromagnetic energy for amplification and conversion into an ionization energy by means of which the water to be purified is treated, characterized in that the device comprises: a central sphere (10), which is arranged in the central sphere (10); the light source is made of light radiation permeable materials; an equatorial disc (13) of the central sphere (10) made of a material permeable to light radiation and extending beyond the edge of the sphere in an annular equatorial region to define two hemispheres in the sphere; two groups of peripheral spheres, each consisting of four peripheral spheres (12), one sphere (16, 16 ') being placed on the pole of each hemisphere, and the other three spheres (18, 20, 22; 18 ', 20', 22 ') are simultaneously tangent to both the same hemisphere and the annular region of the equatorial disc (13), the polar peripheral spheres (16, 16') in each group being tangent to the three non-polar peripheral spheres (18 ', 20', 22 '; one equilateral pyramid (12, 18, 20, 22) is located at the vertex of the equilateral pyramid, said equilateral pyramid and the other equilateral pyramid interpenetrating at the equatorial disc (13); an equatorial disc (13 ') in each peripheral sphere (12), the equatorial disc (13') being arranged parallel to the equatorial disc (13) of the central sphere (10) made of a material permeable to light radiation; the conveying pipeline (24) is used for water to be purified and is configured to be a Venturi tube (26) which is provided with a contraction section and then connected with a diffusion section; a planar spiral winding (14) made of electrically conductive wires and a planar spiral winding (14 ') made of electrically conductive wires, the planar spiral winding (14) being arranged on the equatorial disc (13) of the central sphere (10) and the planar spiral winding (14') being arranged on the equatorial disc (13 ') of each peripheral sphere (12); a pair of oppositely arranged conical spiral windings (15, 15 ') made of conductive wires, the vertexes of the pair of conical spiral windings (15, 15') being located at the center of the equatorial disc (13 ') of each peripheral sphere (12) and the bottoms of the pair of conical spiral windings (15, 15') being located on the surface of the peripheral sphere; the number of turns of one of the two conical windings is twice of that of the other conical winding, and the winding directions of the two conical windings are opposite; a pair of conductive wire windings (28, 28 ') extending along the contracted section and the diffused section of the transfer conduit (24); a first electrical connection connecting the internal terminals of the conical spiral windings (15, 15 ') of each peripheral sphere (12) to the internal terminals of the planar spiral windings (14') of the same peripheral sphere; a second electrical connection connecting the external terminals of the planar winding (14 ') of each polar peripheral sphere (16, 16') to all other non-polar peripheral spheres (18 ', 20', 22 '; an external terminal of the planar spiral winding (14 ') of the planar spiral winding (18, 18, 20, 22) and an internal terminal of the planar spiral winding (14) of the equatorial disc (13) of the central sphere (10); and a third electrical connection connecting the planar spiral winding (14) of the equatorial disc (13) of the central sphere (10) to the winding (28, 28 ') of the transfer duct (24).

The invention provides a generation method and device of a laser-maintained plasma light source and semiconductor equipment, and the generation method comprises the following steps: injecting a first gas into a discharge chamber irradiated by laser to generate plasma; after it is determined that the plasma is ignited and enters the maintaining stage, second gas is injected into the discharge cavity to generate laser maintaining plasma meeting preset conditions; the ionization energy of the first gas is smaller than that of the second gas. By adopting the generation method of the laser maintenance plasma light source provided by the invention, the success rate that the second gas with high ionization energy is excited and ignited is improved, meanwhile, the starting voltage and the maintenance power of the generation device are reduced, the service lives of a bulb, an electrode and other elements in the discharge chamber are prolonged, and the circuit safety is improved; and instability, arc discharge or plasma shrinkage caused by electric field concentration are avoided, so that the laser maintains the stability and uniformity of a plasma generation process.

The present invention provides a two-dimensional particle-containing composition and a method for producing the two-dimensional particle-containing composition. [Solution] A two-dimensional particle of a layered material comprising one or more layers, and a dispersion medium having a relative permittivity greater than that of water, wherein the one or more layers are of the following formula: M m X n A two-dimensional particle-containing composition comprising a layer body represented by the formula (wherein M is at least one metal element M1 of groups 3, 4, 5, 6, or 7 having an ionization energy higher than Ti, or a combination of metal element M1 accounting for 50 atomic percent or more of M and metal element M2 of groups 3, 4, 5, 6, or 7 other than metal element M1 accounting for 50 atomic percent or less of M, X is a carbon atom, a nitrogen atom, or a combination thereof, n is between 1 and 4, and m is greater than n and 5 or less), and a predetermined modification or termination T present on the surface of the layer body, wherein the two-dimensional particles have fluorine and oxygen elements.

The application provides a laser gyro with an auxiliary electrode and a low-pressure rapid starting method, and relates to the technical field of laser gyros.The laser gyro comprises a frame with a cavity, the cavity comprises a capillary, two first electrodes, a second electrode and an auxiliary electrode are symmetrically arranged on the frame, the first electrodes and the second electrode are opposite in polarity, the second electrode is located between the two first electrodes, the auxiliary electrode is arranged close to the second electrode, the auxiliary electrode is the same in polarity as the first electrode, a control circuit is arranged on one side of the frame, and an optical auxiliary device is further arranged on the frame.By arranging the auxiliary electrode near the second electrode, the discharge channel distance between the auxiliary electrode and the second electrode is shorter, the charge density of the discharge end of the auxiliary electrode is improved, the ionization energy of the working gas can be effectively reduced by the light ionization effect of the optical auxiliary device, the working gas in the capillary can be broken down within a few hundred milliseconds, and the starting speed is greatly improved compared with the starting time of several seconds of a traditional laser gyro.

The surfaces of epitaxial source and drain regions of NMOS (n-type metal-oxide-semiconductor) transistors are heavily doped with an n-type chalcogen (e.g., tellurium, selenium, sulfur) to overcome the limitations of low-ionization-energy n-type dopants (e.g., phosphorus, arsenic, antimony) on free electron concentrations due to Fermi-level pinning. The chalcogen can be introduced into the source and drain regions by diffusion from a chalcogen-rich metal contact layer or by chemical vapor deposition (CVD) processes in which a chalcogen precursor flows over the source and drain regions after its formation. In some embodiments, the CVD process may involve silicon and chalcogen precursors flowing over the surface of the source and drain regions to form a thin layer of silicon heavily doped with a chalcogen.

The invention provides an SLD light source displacement damage evaluation method and system and electronic equipment, and relates to the technical field of semiconductor device detection, and the method comprises the steps: obtaining the change data of the optical power of an SLD light source along with the actual measurement fluence, and determining the optical power degradation ratio according to the change data; determining an average non-ionization energy loss value of the particles in a chip sensitive area of the SLD light source according to the energy and the type of each particle, and converting the actually measured fluence into a displacement equivalent fluence according to the average non-ionization energy loss value; converting the optical power degradation ratio into a normalized degradation amount to obtain a corresponding relation between the normalized degradation amount and a displacement equivalent fluence; performing linear fitting according to the corresponding relation to obtain a displacement damage factor; and according to the displacement damage factor, determining an optical power residual ratio of the SLD light source after in-orbit operation, and obtaining a displacement damage evaluation result. The precision of SLD light source displacement damage evaluation is remarkably improved.

The application discloses a method for reducing the matrix effect of photoionization ion mobility spectrometry for detecting complex samples. The ion mobility spectrometer comprises an ion mobility tube with good air tightness, a photoionization source and an ion receiving electrode oppositely arranged at the left and right ends of the ion mobility tube, and an ion gate between the photoionization source and the ion receiving electrode. The region between the photoionization source and the ion gate is an ionization zone, and the region between the ion gate and the ion receiving electrode is a migration zone. The method maintains the air pressure in the ion mobility tube in the range of 10-80 kPa, and at the same time, adjusts the isolated high-voltage power supply connected with the ionization zone to maintain the electric field in the ionization zone in the range of 300-600 V / cm, so that the ion-molecule reactions such as charge transfer and proton transfer of the ionized complex target compound in the ionization zone are inhibited, thereby being beneficial to eliminating the influence of the complex matrix on the accurate quantification and detection of the ion mobility spectrometer for low proton affinity or high ionization energy target compounds.

The application provides a laser gyro with an auxiliary electrode and a low-pressure rapid starting method, and relates to the technical field of laser gyros.The laser gyro comprises a frame with a cavity, the cavity comprises a capillary, two first electrodes, a second electrode and an auxiliary electrode are symmetrically arranged on the frame, the first electrodes and the second electrode are opposite in polarity, the second electrode is located between the two first electrodes, the auxiliary electrode is arranged close to the second electrode, the auxiliary electrode is the same in polarity as the first electrode, a control circuit is arranged on one side of the frame, and an optical auxiliary device is further arranged on the frame.By arranging the auxiliary electrode near the second electrode, the discharge channel distance between the auxiliary electrode and the second electrode is shorter, the charge density of the discharge end of the auxiliary electrode is improved, the ionization energy of the working gas can be effectively reduced by the light ionization effect of the optical auxiliary device, the working gas in the capillary can be broken down within a few hundred milliseconds, and the starting speed is greatly improved compared with the starting time of several seconds of a traditional laser gyro.

The surfaces of NMOS (n-type metal-oxide-semiconductor) transistor epitaxial source and drain regions are heavily doped with an n-type chalcogen (e.g., tellurium, selenium, sulfur) to overcome the limitations of low-ionization energy n-type dopants (e.g., phosphorous, arsenic, antimony) to free-electron concentrations due to Fermi-level pinning. The chalcogen can be introduced to the source or drain region surfaces by diffusion from a chalcogen-rich metal contact layer or by chemical vapor deposition processes in which a chalcogen precursor flows over the source and drain regions after they are formed. In some embodiments, the chemical vapor deposition process can comprise silicon and chalcogen precursors flowing over the source and drain region surfaces to form a thin layer of silicon highly doped with a chalcogen.

A rope (1A) for seaweed cultivation comprises: a nurturing rope (5) to which seaweed is adhered; a wire (6) attached to the nurturing rope (5); and a magnesium rod (7) that is supported by the nurturing rope (5), is formed from a metal material having a higher ionization tendency than the wire (6), is electrically connected to the wire (6), and supplies electrons to the wire (6) when installed in the sea. The wire (6) may be spirally wound between the strands of the nurturing rope (5). The magnesium rod (7) may be suspended at one end of the nurturing rope (5).

The invention relates to a method and a device for concentrating one or more components of a gas mixture containing at least a first and a second component, wherein the gas mixture is introduced as a gas stream into a flow channel of at least a first concentration stage and flows through it in the longitudinal direction of the flow channel, the gas mixture interacts with at least a first electric field as it passes through the flow channel, in which at least some of the molecules of the first component are already ionized due to a lower ionization energy, while the molecules of the second component remain neutral due to a higher ionization energy, as a result of the interaction with the first electric field and / or with a further electric field downstream of the first electric field in or on the flow channel,The invention relates to a method for operating a deflecting electric field by at least partially separating the gas mixture across the channel cross-section perpendicular to the longitudinal direction, thereby creating a concentration gradient of ionized molecules of the first component. Finally, downstream of the first or subsequent electric field, a first partial flow and a residual or second partial flow are separated from the gas flow such that the first partial flow is fed from a portion of the gas flow exhibiting the concentration gradient, the concentration of which is higher than in the portion of the gas flow that feeds the residual or second partial flow. The invention further relates to a method for operating a unit of a machine and to a printing press with the aforementioned device.