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Structures for reducing operating voltage in a semiconductor device

A technology of light-emitting devices and ionization energy, which is applied to semiconductor devices, semiconductor lasers, circuits, etc., and can solve problems such as increasing operating voltage and reducing device performance

Inactive Publication Date: 2007-02-21
AVAGO TECH WIRELESS IP SINGAPORE PTE
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Higher series resistance increases the operating voltage of the device and leads to the generation of heat, which usually degrades the performance of the device

Method used

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  • Structures for reducing operating voltage in a semiconductor device
  • Structures for reducing operating voltage in a semiconductor device
  • Structures for reducing operating voltage in a semiconductor device

Examples

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Embodiment Construction

[0020] Embodiments in accordance with the invention are based on the realization that deep main-level and deep donor-level doping greatly enhances ionization in the depletion region of tunnel junctions or ohmic contacts with minimal impact on the bulk semiconductor material. conductivity of semiconductor materials. In III-V nitride materials, magnesium is commonly used as p-type dopant, and silicon is commonly used as n-type dopant. However, additional dopants with higher ionization or activation energies (i.e. "deeper" impurities) will be ionized in the depletion region, appreciably reducing the width of the depletion region and thus lowering the operating voltage of the semiconductor device .

[0021] In one embodiment of the present invention, the tunnel junction structure of the p-type tunnel junction layer and the n-type tunnel junction layer is formed by using doped semiconductor materials to reduce the valence band energy and n of the p-type tunnel junction layer mater...

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Abstract

A light-emitting device comprises an active region configured to generate light in response to injected charge, and an n-type material layer and a p-type material layer, wherein at least one of the n-type material layer and the p-type material layer is doped with at least two dopants, at least one of the dopants having an ionization energy higher than the ionization energy level of the other dopant.

Description

technical field [0001] The present invention relates to structures for reducing operating voltages in semiconductor devices. Background technique [0002] Semiconductor-based optoelectronic devices are commonly used in optical communication systems and other systems. [0003] Various materials have been employed to fabricate optoelectronic light-emitting devices. In one example, Group III and Group V elements are combined in various compositions to form the layer. One of the material systems using Group III and Group V elements is the Gallium Nitride (GaN) material system. Layers of group III-V elements are often formed to fabricate semiconductor optoelectronic devices. These devices often include a region called a p-n junction. One or more p-n junctions may form part of a semiconductor optoelectronic device. [0004] For optoelectronic devices formed with GaN material systems, the contact resistance of the p-type material is generally higher compared to the contact res...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00
CPCH01S5/305
Inventor 维金奈·M·罗宾斯史蒂文·D·莱斯特尔杰弗里·N·米勒戴维·P·保尔
Owner AVAGO TECH WIRELESS IP SINGAPORE PTE
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