66results about How to "Low operating voltage" patented technology

A surface-emission laser diode includes a distributed Bragg reflector tuned to wavelength of 1.1 μm or longer, wherein the distributed Bragg reflector includes an alternate repetition of a low-refractive index layer and a high-refractive index layer, with a heterospike buffer layer having an intermediate refractive index interposed therebetween with a thickness in the range of 5-50 nm.

An oral cavity cleaning tool for the purpose of sterilization of the inside of oral cavity is provided that carries out efficient sterilization by using effective chlorine that is obtained through electrolysis. The oral cavity cleaning tool comprises a block handle, a head section extending from the block handle, a pair of electrodes provided on the head section and a power source that supplies electric current to the pair of electrodes, wherein the electrodes are put into contact with an oral fluid that contains chloride ions thereby to cause electric current to flow between the electrodes, so that the chloride ions are transformed into effective chlorine.

This invention relates to liquid crystal (LC) displays comprising cells of well-defined shape, size and aspect ratio which cells are filled with a liquid crystal composition preferably containing dichroic dye(s), and novel processes for their manufacture.

A tandem organic electroluminescent device includes an anode and a cathode. The device also includes a plurality of organic electroluminescent units disposed between the anode and the cathode, wherein each of the organic electroluminescent units includes one or more organic layers including at least a light-emitting layer and an associated light-emitting junction, connecting unit disposed between adjacent organic electroluminescent units, and wherein at least two of the neighboring light-emitting junctions are separated by a distance of less than 90 nanometers.

A subject for the invention is to provide a charge-transporting polymer having high hole-transporting ability and excellent solubility and film-forming properties and a composition for organic electroluminescent element which contains the charge-transporting polymer. Another subject for the invention is to provide an organic electroluminescent element which has a high current efficiency and high driving stability. The charge-transporting polymer comprises a group represented by the following formula (1) as a side chain:wherein in formula (1), the benzocyclobutene ring may have one or more substituents. The substituents may be bonded to each other to form a ring. The spacer represents a group which links the benzocyclobutene ring to the main chain of the charge-transporting polymer through three or more single bonds.

The present invention relates to methods and apparatus for producing an electronic device, such as an organic light-emitting diode (OLED), having an electrode with enhanced injection properties. An example method according to the invention comprises the steps of providing an electrode, depositing a first layer of molecular charge transfer material on the electrode, and cross-linking the molecular charge transfer material. With the method according to the invention, an OLED with higher light efficiency, lower operating voltage, and longer lifetime can be produced. The present invention further relates to an electronic device having an electrode with enhanced injection properties.

This invention provides a small polar electromagnet device of small power consumption. Provided is a polar electromagnet device in which a drive shaft (61) is supported so as to reciprocate in an axis center direction at a center hole (31c) of a spool (31) wound with a coil (32), a movable iron core (42) is attached to a lower end of the drive shaft (61) on the same axis center, and the drive shaft (61) is reciprocated with the movable iron core (42) which reciprocates based on excitation and demagnetization of the coil. A permanent magnet (45) is integrally arranged at the movable iron core (42) on the same axis center.

A white organic light-emitting device is provided by the present invention. The white organic light-emitting device includes an anode, a hole transport layer, a first light-emitting layer, a second light-emitting layer, a third light-emitting layer, an electron transport layer and a cathode, wherein the second light-emitting layer is formed between the first and the third light-emitting layers, the emission wavelength of the second light-emitting layer is longer than that of the first and third light-emitting layers, and the host material of the first and third light-emitting layer are different. The white organic light-emitting device of the present invention is capable of effectively increasing the luminous efficiency, reducing operating voltage, and providing color stability.

Disclosed are an acridine derivative and an organic electro-luminescence device including the same. Specifically, the disclosed acridine derivative compound has an aryl moiety or a heteroaryl moiety, linked to an acridine moiety and an amine moiety, and the disclosed organic electro-luminescence device including the acridine derivative compound requires a low operating voltage, shows high efficiency, and is enhanced in life-span.

Electrode structures including transparent electrode structures, in particular self supporting electrode structures, are described herein. Further, applications of the herein novel electrode structures are provided, including electronic writing tablets, electronic paper and fabrication methods for electronic writing tablets and electronic paper. The electrode structure may be transparent and self-supporting, thereby providing a novel electrode structure as compared to conventional transparent electrodes.

The present provides a semiconductor laser device achieving high output power, long life, and a low operation voltage and a method of manufacturing the device. A first semiconductor layer, an active layer, a second semiconductor layer, and a contact layer are sequentially stacked on a substrate. A ridge portion extending between both facets of a resonator is provided in the second semiconductor layer and the contact layer. A current confining layer is formed to be in contact with the ridge portion. The current confining layer has an opening on an upper surface of the ridge portion. A first electrode in contact with the contact layer is formed in the opening. A second electrode is provided on the first electrode. A non-current injection portion in contact with the contact layer is provided on the upper surface of the ridge portion near the resonator facet. The current confining layer and the non-current injection portion are formed of the same dielectric film. The second electrode is spaced apart from an upper surface region of the non-current injection portion.

The invention discloses a high-voltage DC relay and an assembly method thereof. The high-voltage DC relay comprises two fixed contacts and a movable assembly, wherein the movable assembly comprises a movable spring part, a main spring and a push rod assembly, the push rod assembly comprises two independent parts of a push rod part and an U-shaped basket, the push rod part comprises a fixed piece and a push rod which are fixed together by insulation plastic, the two ends of the fixed piece are respectively fixed with the bottom of the side part of the U-shaped basket after the main spring, the movable spring part and the U-shaped basket are sequentially arranged at the top of the push rod part, so that the main spring is elastically tightened between the bottom surface of the movable spring part and the insulation plastic of the push rod part, and a movable spring piece props against the inner side of the top of the U-shaped basket. By dividing the push rod assembly into two independent parts, the high-voltage DC relay has the characteristics of simplicity in structure, convenience in forming and easiness in ensuring size accuracy; meanwhile, the two parts are easy to assemble, and automatic assembly of parts which are mutually matched is easily achieved; and moreover, the bonding resistant ability also can be enhanced.

The invention discloses a solution regeneration apparatus for a solution deep dehumidifying system, comprising a first solution tank, a heat exchanger, a solar photovoltaic cell, a solution preprocessor, a membrane regenerator, a second solution tank, a third solution tank, a storage battery, a first anticorrosion solution pump, a second anticorrosion solution pump and a regulating valve. The apparatus of the invention heats the dehumidifying solution by the heat exchanger, and then primarily regenerates the dehumidifying solution by the solution preprocessor, which increase the concentration of the inlet solution of a regeneration chamber and a desalination chamber of the membrane regenerator, thereby raising the regeneration effect of the membrane regenerator. Finally, high-concentration dehumidifying solution for the solution deep dehumidifying system is obtained. The apparatus of the invention effectively utilizes the complementarity of solar photovoltaic and photo-heat, thereby raising the running stability of the solar solution deep dehumidifying system, and simultaneously, the apparatus stores energy by the night low-ebb and low-price electric energy, thereby alleviating the peak-valley difference of the electrical loads, and raising the economy of the system.

The present invention relates to an electrochromic material, and a device utilizing the electrochromic material, comprising a substituted-1,1-dioxo-thiopyran of the general structure I: wherein: X is carbon, nitrogen, oxygen, or sulfur; n is 0, 1 or 2; R3 is independently an electron withdrawing group or a substituted or unsubstituted alky or aryl group; R1 and R5 each independently represent a substituted or unsubstituted alkyl group, a substituted or unsubstituted aryl group, or a substituted or unsubstituted heterocyclic group; and R2 and R4 each independently represent hydrogen, or an electron withdrawing group, or a substituted or unsubstituted alkyl group.

An organic memory device comprising two electrodes having a selectively conductive decay media between the two electrodes provides a capability to control a persistence level for information stored in an organic memory cell. A resistive state of the cell controls a conductive decay rate of the cell. A high and / or low resistive state can provide a fast and / or slow rate of conductive decay. One aspect of the present invention can have a high resistive state equating to an exponential conductive decay rate. Another aspect of the present invention can have a low resistive state equating to a logarithmic conductive decay rate. Yet another aspect relates to control of an organic memory device by determining a power state and setting a resistive state of an organic memory cell based upon a current power state and / or an imminent power state.

An exemplary polarization controller includes a first optical element having a first optical axis and configured to receive light having a first phase, a second optical element having a second optical axis and configured to emit the light having a second phase, and a third element having a third optical axis. At least a portion of the third element is interstitial to the first element and the second element. The exemplary controller also includes at least two drivers, both of which can operate in accordance with an exemplary method of present invention.

The invention which discloses a membrane polar distance repolarization natural cyclic ionic membrane electrolytic tank relates to an electrolytic device used in chlor-alkali industry and aims at solving the problem that the tank voltage is influenced by the solution voltage drop existing among the electrodes in the prior art. The invention mainly consists of unit electrolytic tanks (2), an end part semi-unit electrolytic tank and a sealing pad and ionic membranes (3) which are positioned between the unit electrolytic tanks; the invention has the design points that a support net (11) of a cathode side is welded on a cathode plate (9) to form a cathode chamber through a cathode side gluten plate (10); the cathode side of the unit electrolytic tank also comprises a cathode net (13) and an elastic net (12) which is welded on the support net of the cathode side while the cathode net is arranged outside the elastic net and a sealing surface of a frame is lapped and fixed around the cathode net; the ionic membranes of and among all unit electrolytic tanks are serially connected through a side rod (1) of an extruder and the cathode, the ionic membranes and the anode are closely connected. The ionic membrane electrolytic tank has the advantages of more stable running, great resistance to positive-negative pressure difference, low voltage and low electricity consumption.

The invention provides a semiconductor light-emitting element and a manufacturing method capable of easily enlarging the contact area of a p side electrode and a p type contact layer, furthermore the semiconductor light-emitting element with low operation voltage is obtained. An overhanging-shaped resist pattern (91) on a ridge waveguide top face (46a) is used and a metal film (60) is deposited on the ridge waveguide top face in the way of forming a step with an end part of an insulation film (50). The metal film is used as the mask to etch the insulation film (50) of the ridge waveguide top face (46a). Thus the opening width of an opening part (50a) of the insulation film (50) is enlarged without setting a new mask step and the contact area of the p side electrode (70) and the p type contact layer (45) is enlarged.

A complementary logic element including first and second transistor elements. The first and second gate electrodes of the two transistor elements are electrically parallel to form a common gate. Both the coupling layers of the first and the second transistor element include a resistance switching material, a conductivity of which may be altered by causing an ion concentration to alter if an electrical voltage signal of an appropriate polarity is applied. The first and second transistor elements also include an ion conductor layer that is capable of accepting ions from the coupling layer and of releasing ions into the coupling layer. The coupling layers and ion conductor layers are such that the application of an electrical signal of a given polarity to the gate enhances the electrical conductivity of the first coupling layer and diminishes the electrical conductivity of the second, or vice versa.

The present invention relates to a resistive random access memory using the rare earth scandate thin film as the storage medium, comprising a substrate, an insulation layer, a first electrode layer, a resistive memory layer, and a second electrode layer. In the present invention, it uses an amorphous rare earth scandate layer as the resistive memory layer of the resistive random access memory. Therefore, the resistive random access memory using the rare earth scandate thin film as the storage medium having advantages of low operation voltage and low power consumption can easily be manufactured without using any forming process or thermal annealing process. Moreover, through the characteristics of unipolar resistance switching behavior revealed by the amorphous rare earth scandate layer, the resistive random access memory using rare earth scandate thin film as the storage medium is able to perform a high resistance state and a low resistance state.

The invention discloses a multi-generator leading-phase operation method considering generator maximum leading-phase capacity. The method comprises the following steps: selecting some bus node in a network as an observation node and observing drop amount of bus voltage of the selected node; according to the feature that different generators absorb same reactive power, observing drop amount of node bus voltage correspondingly, and calculating leading-phase influence factors of the different generators; and carrying out ranking according to the values of the leading-phase influence factors, and allocating reactive power needed to be absorbed by leading-phase operation according to the rank. The method is characterized in that, through cooperation of a plurality of generator sets, grid operating voltage is reduced as quickly as possible under the condition of considering the generator maximum leading-phase capacity. Compared with a conventional depth leading-phase operation method of random single or multiple generators, the method has larger flexibility, can improve voltage drop rate and can maintain system stability as far as possible under the condition of ensuring the generator maximum leading-phase capacity.

Provided is an arylene derivative including a polar functional group represented by Formula 1:An arylene derivative including a polar functional group has excellent solubility in an organic solvent. A soluble compound of the arylene derivative can be used to form a thermally stable organic layer which can be used to form an organic light emitting device having low operating voltage, high efficiency, and excellent brightness.

The present invention provides an electron emission device based on a hot electron emission cathode. The electron emission device comprises an electron generation unit and a heating unit, the heatingunit comprises a heating assembly, an insulating sleeve and an insulating heat insulation assembly, and the heating assembly comprises a plurality of heating metal wires. A metal pedestal is equippedwith a plurality of through holes, the metal pedestal and the insulating sleeve are in nested arrangement from inside to outside, and a gap is arranged between the metal pedestal and the insulating sleeve. The heating metal wires are located in the gap, one end of each heating metal wire is connected with the metal pedestal, and the other end penetrates the through hole to form one output end of the heating assembly. The insulating heat insulation assembly seals the gap to form the heating space, the electron generation unit comprises the hot electron emission cathode and a hot electron emission anode, the hot electron emission cathode is used to receive the heat of the insulating sleeve to generate the electrons, and the electrons are emitted under the action of an electric field formed between the hot electron emission cathode and the hot electron emission anode. On the condition of keeping the internal high vacuum, the device can provide the high-density electrons to the surroundingatmospheric environment.

The invention discloses a two-stage solar solution film type regeneration device, which comprises a first solution tank, a second solution tank, a third solution tank, a solar photovoltaic cell, a regulating valve, a first corrosion-resistant solution pump, a second corrosion-resistant solution pump, a first-stage film regenerator, a second-stage film regenerator and a storage battery. The solution is preliminarily regenerated by utilizing the first-stage film regenerator, the concentration of an inlet solution of the second-stage film regenerator is improved, and moisture absorbed by a dehumidification solution in a solution dehumidification air-conditioning system is removed, so that the operating stability of the system is improved; and meanwhile, the solution is heated by utilizing the heat dissipated in the process of operating the solar photovoltaic cell, and energy consumption of the film regenerators is reduced. By the device, the complementary property of solar photovoltaics and optothermal is effectively utilized, the dehumidification solution can be stably and efficiently regenerated under high-temperature high-humidity climate conditions, the energy can be stored by utilizing off-peak low-price electricity at night, the power load difference between peak and valley is relieved, and the economical efficiency of the system is improved.

The invention relates to a nonvolatile semiconductor storage element and an associated production and control method, the storage element includes a semiconductor substrate having a source region, a drain region and an intermediate channel region. On a first portion of the channel region, a control layer is formed and insulated from the channel region by a first insulating layer whereas respective charge storage layers are formed in a second portion of the channel region and are insulated from the channel region by a second insulating layer. On the charge storage layer, a programming layer is formed and insulated from the charge storage layer by a third insulating layer and is electrically connected to a respective source region and drain region via a respective interconnect layer.

An organic semiconductor element provided with an FET having a structure that can control a channel length short and prevents contact resistance due to a step part from increasing, and a high aperture ratio organic light emitting display device using the organic FET. On a substrate (1), a first conductive layer (2) is provided as one of source / drain electrodes, and on the first conductive layer (2), an organic semiconductor layer (3) and a second conductive layer (4) to be the other of the source / drain electrodes are provided. Then, on a side plane of the organic semiconductor layer or a front plane of the semiconductor layer (3) exposed by removing a part of the second conductive layer, and on a side plane of the second conductive layer, a gate electrode (third conductive layer) (6) is provided through an insulating layer (5) to form the FET. The organic semiconductor element is provided with the FET. The organic EL display device has the FET having such structure stacked on an organic EL part as a drive element.

The present invention relates to an overvoltage protection device based on hollow electrodes. It includes upper hollow electrode and lower hollow electrode which are parallel and packaged in an insulated closed external shell by means of upper packaging end cover and lower packaging end cover, the interior of upper packaging end cover and lower packaging end cover, the interior of upper electrode or lower electrode is equipped with trigger electrode, and the spacing distance between end face of upper electrode and end face of lower electrode is 1-3 mm, and on the end face of upper electrode and on the end face of lower electrode one or more than one correspondent concentric through hole is cut respectively, and the diameter of said through hole is 2-5 mm, between upper electrode and lower electrode a shielding case is set.

A high-frequency discharge excited gas laser oscillator receiving power from a laser power supply controlled by a pulse command, the high-frequency discharge excited gas laser oscillator provided with a power detecting section for detecting supply power from the laser power supply to a discharge tube and a pulse command control circuit positioned at an upstream side of the laser power supply, comparing an allowable upper limit value (W) of supply power found from a relationship between a discharge tube temperature and supply power and an actual supply power detected by the power detecting section, stopping the pulse command value to the discharge tube when the supply power is higher than the allowable upper limit value, and setting a pulse command value based on the allowable upper limit value.

The invention provides a regeneration method for resin in a continuous electric desalting membrane reactor, belonging to the industrial water processing field. The regeneration method for resin in a continuous electric desalting membrane reactor has the advantages of simple operation and low cost. Moreover, the regeneration method can recover the desalting function of the resin, operating voltage is obviously reduced, and cost in returning a CEDI (continuous electric desalting ion) device to a factory to be maintained and exchanged is reduced. The regeneration method provided by the invention is characterized in that the regeneration method enhances the operating voltage and current, so that the resin can be regenerated under the strong electric field and large current condition.

The invention relates to a nitride semiconductor device and a manufacturing method thereof. The invention aims at preventing the complexity of processes or the reduction in yield, and preventing peeling-off of the electrode in a semiconductor device, in particular the nitride semiconductor device used in the manufacture of laser diodes. The nitride semiconductor device of the invention comprises: a P-type semiconductor layer (1) with a ridge (2) on the surface; an SiO2 film (3) which covers at least the side of the ridge (2); an adherence layer (4) which is formed on the surface of the SiO2 film (3) and is composed mainly of silicon; a P-type electrode (5) formed on the upper surface of the ridge (2) and on the surface of the adherence layer (4).