Organic semiconductor element and organic el display device using the same

Abstract

An organic semiconductor element provided with an FET having a structure that can control a channel length short and prevents contact resistance due to a step part from increasing, and a high aperture ratio organic light emitting display device using the organic FET. On a substrate (1), a first conductive layer (2) is provided as one of source / drain electrodes, and on the first conductive layer (2), an organic semiconductor layer (3) and a second conductive layer (4) to be the other of the source / drain electrodes are provided. Then, on a side plane of the organic semiconductor layer or a front plane of the semiconductor layer (3) exposed by removing a part of the second conductive layer, and on a side plane of the second conductive layer, a gate electrode (third conductive layer) (6) is provided through an insulating layer (5) to form the FET. The organic semiconductor element is provided with the FET. The organic EL display device has the FET having such structure stacked on an organic EL part as a drive element.

Description

technical field [0001] The present invention relates to an organic semiconductor element including a field effect transistor (hereinafter referred to as FET) using an organic semiconductor, and an organic EL display device using the organic semiconductor element. More specifically, it relates to an organic semiconductor element that uses an organic semiconductor, but can make the channel length very short, and can constitute a display device only by laminating with an organic EL part, and an organic EL display device using the organic semiconductor element. . Background technique [0002] A known conventional FET structure using an organic semiconductor layer is the structure shown in FIGS. 9A to 9C . That is, the structure shown in FIG. 9A is called a bottom contact (bottom contact) (BC) type, for example, on an insulating film 32 on a gate electrode 31 made of a silicon substrate, a pair of source electrode / drain electrode is provided. 33 and 34, and the organic semicond...

AI Technical Summary

Problems solved by technology

In this structure, since the channel length can be controlled by the thickness of the organic semiconductor layer 35, it is easy to shorten the channel length. Organic semiconductor layer, so there is a problem that its coverage deteriorates and contact resistance increases

Images