Semiconductor light-emitting element and method of manufacturing the same

Abstract

The invention provides a semiconductor light-emitting element and a manufacturing method capable of easily enlarging the contact area of a p side electrode and a p type contact layer, furthermore the semiconductor light-emitting element with low operation voltage is obtained. An overhanging-shaped resist pattern (91) on a ridge waveguide top face (46a) is used and a metal film (60) is deposited on the ridge waveguide top face in the way of forming a step with an end part of an insulation film (50). The metal film is used as the mask to etch the insulation film (50) of the ridge waveguide top face (46a). Thus the opening width of an opening part (50a) of the insulation film (50) is enlarged without setting a new mask step and the contact area of the p side electrode (70) and the p type contact layer (45) is enlarged.

Description

technical field [0001] The present invention relates to a manufacturing method of a semiconductor light-emitting element and a semiconductor light-emitting element, in particular to a ridge-type semiconductor laser element and a manufacturing method thereof. Background technique [0002] A conventional method for manufacturing a ridge-type semiconductor laser device includes forming an overhang-shaped resist with a part of the upper surface exposed on the upper surface of a p-type GaN contact layer formed on the top of a ridge of an AlGaInN-based compound semiconductor. The step of forming an insulating film so as to cover the exposed portion on the resist and the upper surface of the p-type contact layer; removing the resist to peel off the insulating film formed on the resist The process of forming a p-side electrode on the opening of the p-type contact layer and the insulating film, thereby improving the yield in the above-mentioned lift-off process (for example, refer to...

AI Technical Summary

Problems solved by technology

[0004] In the manufacturing method of above-mentioned existing semiconductor light-emitting element, owing to cover the part of the upper surface of the p-type contact layer that is formed on the ridge top by insulating film, so, there is the contact area of ​​p-type contact layer and p-side electrode to reduce, And the problem that the operating voltage of the semiconductor light-emitting element increases

In particular, in blue-violet semiconductor light-emitting elements, since the contact resistance of nitride semiconductors such as GaN used in the p-type contact layer is higher than that of III-V compound semiconductors such as GaAs used in the p-type contact layer of red semiconductor light-emitting elements Due to the high contact resistance of the p-type contact layer and the p-side electrode, there is a problem that the operating voltage of the semiconductor light-emitting element is significantly increased.

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