Patents
Literature
Patsnap Eureka AI that helps you search prior art, draft patents, and assess FTO risks, powered by patent and scientific literature data.

1results about How to "Resistance minimization" patented technology

A pad structure layout and a design method thereof

PendingCN122366328AReduce latchup riskMake full use of the high degree of redundancy within the PadComputer hardwareControl circuit
This application proposes a PAD structure layout and its design method. The PAD structure layout includes: an ESD ring, comprising a VSS ring and a VDD ring, for ESD discharge; a POWER ring, composed of multiple layers of metal connected in parallel, for providing power to the logic control circuit; multiple N-type ESD protection transistors, including a first N-type ESD protection transistor and a second N-type ESD protection transistor; multiple P-type ESD protection transistors, including a first P-type ESD protection transistor and a second P-type ESD protection transistor; multiple signal window access points, located between the VSS ring and the VDD ring, configured to connect signals to the N-type ESD protection transistors and the P-type ESD protection transistors respectively; a first window and a second window; a logic control circuit located below the POWER ring; and a metal trace structure, including M1 in a first direction and M2 and M3 connected in parallel in a second direction. This application can reduce the layout area and chip perimeter, while improving the layout of windows and ESD protection transistors, utilizing space redundancy to reduce latch-up risk and save chip space.
Owner:ARTMEM TECHNOLOGY CO LTD