This application proposes a PAD structure
layout and its design method. The PAD structure
layout includes: an ESD ring, comprising a VSS ring and a VDD ring, for ESD
discharge; a POWER ring, composed of multiple
layers of
metal connected in parallel, for providing power to the
logic control circuit; multiple N-type ESD protection transistors, including a first N-type ESD protection
transistor and a second N-type ESD protection
transistor; multiple P-type ESD protection transistors, including a first P-type ESD protection
transistor and a second P-type ESD protection transistor; multiple
signal window access points, located between the VSS ring and the VDD ring, configured to connect signals to the N-type ESD protection transistors and the P-type ESD protection transistors respectively; a first window and a second window; a
logic control circuit located below the POWER ring; and a
metal trace structure, including M1 in a first direction and M2 and M3 connected in parallel in a second direction. This application can reduce the
layout area and
chip perimeter, while improving the layout of windows and ESD protection transistors, utilizing space redundancy to reduce latch-up risk and save
chip space.