Nitride semiconductor device and method of manufacturing the same
A nitride semiconductor and semiconductor technology, which is applied in the structure of semiconductor lasers, optical waveguide semiconductors, ion implantation and plating, etc., can solve the problems of affecting the optical characteristics of the device, complicating the process, and decreasing the yield, and achieves restraining electrode peeling. , high output, heat reduction effect
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Embodiment approach 1
[0021] (structure)
[0022] figure 1 It is a cross-sectional view showing main parts of the nitride semiconductor device of this embodiment. A ridge 2 is formed on the upper surface of a P-type nitride semiconductor layer (P-type semiconductor layer) 1 made of a P-type nitride semiconductor, and a ridge 2 is formed from the side surface of the ridge 2 to the top of the P-type nitride semiconductor layer 1 connected to the lower part of the side surface. surface, set SiO in turn in a covering manner 2 film (insulating film) 3, an Si adhesive layer (adhesive layer) 4 made of silicon, and a P-type electrode ( Electrode) 5.
[0023] also, figure 2 is showing figure 1 A cross-sectional view of a light-emitting nitride semiconductor device as an example of the whole of the nitride semiconductor device shown. The n-electrode 8, the n-GaN substrate 9, the n-AlGaN cladding layer 10, the n-GaN guiding layer 11, the active layer 12, the P-GaN guiding layer 13, the P-AlGaN cladding...
Embodiment approach 2
[0036] (structure)
[0037] Figure 7It is a cross-sectional view showing main parts of the nitride semiconductor device of this embodiment. A ridge 2 is formed on the upper surface of the P-type nitride semiconductor layer 1 made of a P-type nitride semiconductor, and SiO is provided from the side surface of the ridge 2 to the upper surface of the P-type nitride semiconductor layer 1 connected to the lower part of the side surface. 2 film16. In addition, with SiO covering the upper surface of the ridge 2 and the side surfaces of the ridge 2 2 On the surface of the membrane 16, a P-type electrode 5 is provided.
[0038] Here, for SiO 2 The silicon composition of the film 16 is controlled so as to be non-uniform in the film thickness direction. Figure 8 is for SiO 2 Diagram of the composition of film 16. SiO 2 The silicon composition of film 16 is oriented towards SiO 2 The surface side of the film 16 is formed so as to increase.
[0039] (Manufacturing method)
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