The invention discloses an NiO-doped light-emitting diode and a preparation method therefor, and the method comprises the steps: enabling nickel salt, first doped salt and second doped salt to be mixed in deionized water or 2-methoxyethanol, adding glycine or acetylacetone, carrying out heating, and preparing LixMyNiO, wherein the first doped salt is lithium salt, and the second doped salt is magnesium salt, copper salt or zinc salt. In LixMyNiO, M is Mg, Cu or Zn, x is greater than zero but less than one, y is greater than zero but less than one. According to the invention, an LixMyNiO film is low in preparation temperature, and can be prepared under the temperature 150-200 DEG C. Moreover, a little of ammonia water is added in the preparation process of the LixMyNiO film, thereby guaranteeing the stability of precursor solution. The method improves the stability of hole transmission under the condition of guaranteeing that the work function of nickel oxide is not reduced, and reduces the hole injection barrier. The method enables the light-emitting diode to be higher in efficiency.