The
boron diffusion furnace comprises a furnace body, a furnace door, a bearing
assembly and a flow equalizing plate set, and the bearing
assembly is arranged in a furnace cavity of the furnace body; the flow equalizing plate set comprises a first flow equalizing plate close to the air inlet
pipe and a second flow equalizing plate close to the bearing
assembly, a through hole and a plurality of first through grooves are formed in the first flow equalizing plate in a penetrating mode, and the air outlet
pipe penetrates through the through hole; the second flow equalizing plate is rotationally connected with the inner wall of the furnace cavity of the furnace body, a sliding groove and a plurality of second through grooves are formed in the second flow equalizing plate in a penetrating mode, and the air outlet
pipe is slidably connected with the sliding groove. Therefore, the flow field distribution can be improved by introducing the pore-adjustable flow equalizing plate group, the uniform distribution of gas in the furnace body is realized, the doped gas carried by the gas can be uniformly deposited on the surface of a
silicon wafer, and meanwhile, the furnace tube is maintained in a low-pressure state and is matched with the gas flowing at a
constant speed, so that the uniformity of the
silicon wafer is improved. And the
diffusion uniformity of the
silicon wafers at the front, middle and rear positions in the
quartz boat is further improved, so that the square resistance of the silicon wafers is reduced, and the
electric efficiency is improved.