316results about How to "Lower injection barrier" patented technology

The invention relates to a flexible organic light emitting transistor display device, which comprises a substrate (1), a source electrode layer (2a), a drain electrode layer (2b), a charge injection layer (3), organic semiconductor layers (4, 5 and 6), a gate insulating layer (7) and a gate electrode layer (8), wherein the source and drain electrode layers (2a and 2b) are made of graphene. The charge injection layer is added, a charge injection material is selected, the drain and source electrode layers are made of the graphene, so that the flexible active matrix organic light emitting transistor display device is transparent and high in aperture opening ratio and brightness, low in operating voltage and long in service life.

The invention discloses a NiO composite film and a quantum dot light-emitting device and the preparation and application thereof, which utilizes an M: NiO/NiO composite film structure, an M: NiO film layer of NiO doped by M metal and an M: NiO/NiO structure formed composite material film with NiO composition gradient composed by the NiO film layer, wherein M metal can be any metal of Li, Mg and Cu or an alloy. The M mole ratio in the M metal doped NiO film layer ranges between 1-5 mol %. The invention can not only solve the problem of hole injection, but also improves the balance of carrier injection in the device with the result being the improvement in the performance and stability of the device and the solution to the problem of short life of the existing quantum dot light-emitting device. In addition to the cathode using vacuum evaporation, all the function layers, including the inorganic hole composite layer, use the solution spin coating method for the film preparation. The materials can be obtained easily, the method is simple and the cost is low.

The present teachings provide methods for depositing and patterning organic light-emitting device (OLED) buffer layers. The method can use a thermal printing process and one or more additional processes, such as vacuum thermal evaporation (VTE), to create an OLED stack. OLED stack structures are also provided wherein which at least one of the charge injection or charge transport layers is formed by a thermal printing method at a high deposition rate. The organic layer can be subject to post-deposition treatment such as baking. The structure of the organic layer can be amorphous, crystalline, porous, dense, smooth, rough, or a combination thereof, depending on deposition parameters and post-treatment conditions. The organic layer can improve light out-coupling efficiency of an OLED, increase conductivity, decrease index of refraction, and/or modify the emission chromaticity of an OLED.

The invention discloses a quantum dot electroluminescent device and a preparation method thereof. In order to reduce the hole injection barrier of a quantum dot light emitting diode device, small molecular materials containing polar coordination groups of lone pair electrons, such as materials containing amino groups, mercapto groups or phosphorus groups, are dissolved in a proton solvent throughin-situ ligand replacement and the obtained product is applied to a filmed quantum dot layer after heat treatment during the preparation of the quantum dot light emitting diode device. Because of thepolar coordination groups (amino groups, mercapto groups and phosphorus groups) of lone pair electrons, a larger interface dipole is introduced, the hole injection barrier is reduced, the hole electron flow is balanced, and the device performance is improved. The surface defects of the quantum dot film are passivated, and exciton quenching is reduced. The method has the characteristics of wide applicability, high efficiency and simplicity.

The invention discloses an optical thin film based on an inorganic perovskite quantum dot and a conjugated organic small molecule eutectic structure. The optical thin film is characterized in that theoptical thin film based on the inorganic perovskite quantum dot and conjugated organic small molecule eutectic structure is obtained by commonly dispersing the inorganic perovskite quantum dot and aconjugated organic small molecule into an organic solvent to form a composite dispersion solution, and carrying out a dipping and drawing, inkjet printing or spin-coating technology on the composite dispersion solution to form the film. According to the optical thin film disclosed by the invention, components can be quantitatively controlled based on components of the composite dispersion solutionto form the eutectic structure, and multiple beneficial effects are provided for functionalized application of the thin film; the fluorescence quantum efficiency and the chemical stability of a quantum dot material can be improved; the thin film can be used for detecting high-energy rays based on absorption properties and a photophysical process of the material designed by the system; a conjugated organic small molecule material with high mobility can reduce energy loss caused by charge injection and transmission under a current driving condition.

The invention belongs to the technical field of display application and provides a QLED device, a display device and a preparation method of the display device. The QLED device comprises a substrate,a bottom electrode, a hole transport layer, a quantum dot light-emitting layer, an electron transport layer, a top electrode and a hole injection layer, wherein the substrate, the bottom electrode, the hole transport layer, the quantum dot light-emitting layer, the electron transport layer and the top electrode are sequentially arranged; the hole injection layer is prepared through doping a hole injection material and an interface-modified material; and the interface-modified material is a p-type conductive material. According to the QLED device, the hole injection layer is prepared through doping the hole injection material and the interface-modified material, so that the hole transport capacity and the ionization energy are improved and the hole injection barrier is reduced, thereby effectively improving the electric conductivity, reducing driving voltage, improving injection balance of charge carriers, simultaneously reducing charges of the device, improving the power efficiency ofthe device and prolonging the service life of the device.

To provide a device whose life is less likely to be reduced by deterioration of a light-emitting layer material, an EL display device includes: a pixel electrode, for each pixel, above a substrate; auxiliary wiring in a different region, above the substrate, from the pixel electrode; a transition metal oxide layer on the pixel electrode and the auxiliary wiring; a light-emitting layer in a region, above the transition metal oxide layer, corresponding to the pixel; a common electrode continuously above the auxiliary wiring and the light-emitting layer, and electrically connected to the auxiliary wiring; and a material deterioration suppressing layer continuously on a portion of the transition metal oxide layer above the auxiliary wiring and the light-emitting layer, mainly containing barium, and having a thickness equal to or greater than a size of a single barium atom and smaller than 10 nm.

The invention discloses an organic light emitting diode device, a display panel and a display device. The organic light emitting diode device is mainly characterized in that existing serial top-emitting OLED devices are improved, a homojunction structure is utilized and functional layers of the top-emitting OLED devices connected in series are improved, so that each function layer comprises a hole injection layer, a hole transmission layer, a hole side light-emitting layer, an electron injection layer, an electron transmission layer, an electron side light-emitting layer and at least one group of charge producing layers a and charge producing layers b located between the hole side light-emitting layer and the electron side light-emitting layer, the hole injection layer, the hole transmission layer and the hole side light-emitting layer are sequentially arranged on the side close to an anode, the electron injection layer, the electron transmission layer and the electron side light-emitting layer are sequentially arranged on the side close to a cathode. A first light-emitting unit ...and an Nth light-emitting unit of each serial top-emitting OLED device are of homojunction structures, the using categories of organic materials are decreased, injection potential barriers of charge carriers in the devices are eliminated, the charge carrier injection efficiency and the efficiency of the devices are improved, and drive voltage of the devices is reduced.

The invention provides a quantum dot light emitting diode comprising an anode, a hole injection layer, a hole transmission layer, a quantum dot luminescent layer, an electron transmission layer and a cathode which are arranged in turn. The quantum dot light emitting diode also comprises an anode modification layer which is arranged on the anode and the hole injection layer. The anode modification layer includes fluorine containing organic material. According to the quantum dot light emitting diode, the fluorine containing organic material acts as the anode modification layer which is arranged between the anode and the hole injection layer, and the fluorinated substituent exerts a high electron withdrawing effect by its high electronegativity so as to enhance hole injection; besides, the chemical property of the fluorine containing organic material is stable so that the luminous efficiency of the quantum dot light emitting diode can be stably enhanced and the service life can be prolonged.

The invention belongs to the technical field of organic synthesis, and particularly relates to a phenyl branching luminescent material and an organic electroluminescent device thereof. According to the invention, through fine design of a hole-transport material subjected to branching twisting, a core light-emitting layer material is further selected, and a high-refraction low-absorption covering layer material is introduced, so that compared with the prior art, the device is obviously improved in comprehensive performance such as starting voltage, light emitting brightness, current efficiency,light color and thermal stability, and is obviously improved in performance stability under a state that the device is operated and heat is accumulated.

The invention provides an organic electroluminescent light emitting device which comprises a conductive anode substrate, a hole injection layer, a hole transmission layer, an electron blocking layer, a light emitting layer, a hole blocking layer, an electron transmission layer, an electron injection layer and a cathode which are stacked in order. The material of the electron blocking layer is a mixture of a first compound and a phosphorescent material. The first compound is a bipolar metal oxide, a lithium salt or a silicone small molecule. According to the organic electroluminescent light emitting device, the transmission rate of a hole can be improved by the electron blocking layer, electrons can be blocked at one side of electron blocking layer close to the light emitting layer, the hole can be blocked at one side of the hole blocking layer close to the light emitting layer by the hole blocking layer, thus the recombination area of excitons are controlled in the light emitting layer, and the light emitting efficiency of the organic electroluminescent light emitting device is improved. In addition, the invention also provides the preparation method of the organic electroluminescent light emitting device.

The invention provides an oil-soluble blue-light quantum dot and a preparation method thereof. The oil-soluble blue-light quantum dot comprises a water-soluble blue-light quantum dot, a water-soluble metallic nano-particle layer coating the surface of the water-soluble blue-light quantum dot, and an oil-soluble ligand layer formed on the surface of the water-soluble metallic nano-particle layer. The preparation method comprises the following steps: providing a mixed solution of the water-soluble blue-light quantum dot and water-soluble metallic nano-particles, adjusting a pH value to 7 to 10, subjecting the obtained mixed solution to intense agitation and carrying out a reaction at a room temperature for 3 to 10 h so as to obtain the water-soluble blue-light quantum dot coated by the metallic nano-particles; and providing an oil-soluble surface modifying agent containing a mercapto group, dissolving and mixing the water-soluble blue-light quantum dot coated by the metallic nano-particles and the oil-soluble surface modifying agent containing the mercapto group, and carrying out heat treatment in an inert atmosphere so as to obtain the oil-soluble blue-light quantum dot.

The invention discloses a PEIE intervention standard inverted QLED device and a preparation method thereof. The preparation method comprises the following steps: (1) depositing a ZnO electron injection layer on a flexible substrate; (2) spin-coating a PEIE solution on the ZnO electron injection layer to prepare an interface modification layer A; (3) depositing a quantum dot light-emitting layer onthe interface modification layer A, wherein the quantum dot light-emitting layer is made of ZnCdSeS/ZnS green light quantum dots; (4) depositing a PEIE solution on the quantum dot light-emitting layer to prepare an interface modification layer B; (5) depositing a hole transport layer and a hole injection layer on the interface modification layer B, wherein the hole transport layer is one or moreof PVK, TFB, poly-TPD, TCTA and CBP, and the hole injection layer is PEDOT: PSS; and (6) evaporating a top electrode, wherein the top electrode is an Al, Ag, Cu, Au or alloy electrode, and after evaporation of the device is completed, packaging the device.

The invention provides a preparation method of an In-doped MoO3 thin film and application of the In-doped MoO3 thin film in a QLED. The preparation method of the In-doped MoO3 thin film comprises the steps of: providing indium salts and MoO3, dissolving the indium salts and the MoO3 in an organic solvent to form a mixed solution, adding inorganic acid into the mixed solution, then carrying out heat treatment on the solution to obtain a precursor solution, wherein the temperature of heat treatment ranges from 50 to 80 DEG C; and providing a substrate, depositing the precursor solution on the substrate by adopting a solution processing method, and then carrying out annealing treatment to obtain the In-doped MoO3 thin film, wherein the annealing temperature ranges from 150 to 350 DEG C, and the time ranges from 15 to 30 min.

The invention discloses a short-circuit-preventing top-emission OLED device and a manufacturing method thereof. Specifically, the OLED device comprises a substrate, a short-circuit-preventing reflective anode, a hole-injection layer, a hole-transporting layer, a light emitting layer, an electronic transmission layer also serving as a spacing layer, an electronic injection layer and a semi-transparent cathode. The manufacturing method comprises the following steps of (1) preprocessing the substrate; (2) performing vapor plating on an aluminum layer in the anode; (3) performing vapor plating on a silver layer in the anode; (4) performing vapor plating on the hole-injection layer; (5) performing vapor plating on the hole-transporting layer; (6) performing vapor plating on the light emitting layer; (7) performing vapor plating on the electronic transmission layer; (8) performing vapor plating on the electronic injection layer; (9) and performing vapor plating on the cathode. The device which adopts an aluminum/silver composite anode makes the high reflectivity characteristics of silver fully developed and meanwhile has the advantage of silver overcoming a device short circuit problem. The short-circuit problem of a pure silver anode is thoroughly solved. Meanwhile, the cathode thickness is optimized. Good conductive capabilities and relatively high light transmittance are further kept.

The invention provides a class of ethylize-pyrazine and quinoxaline derivative and a preparation method thereof, and belongs to the technical field of research of photoluminescence. Ethyl-pyrazine and quinoxaline are used by these derivatives as molecular light nuclei, and the derivatives are connected with the functional groups with different structures and different levels of conjugates at the location of nuclear 9, 10; the synthesis method comprises the steps that 4, 7-dibromine-2,1,3-diazosulfide is used as the raw material, after a series of processes of nitration, reduction and condensation, and the like, the light nuclei connecting two bromide ethyl pyrazine and quinoxaline molecular is synthesized at the location of 9, 10, and then through the Suzuki coupling reaction of the carbazole phenylboronic acid with the neighbor and the space in between, the target derivatives are prepared. These derivatives in the ultraviolet-visible light zone have strong absorption abilities and the diluted solutions are able to emit strong fluorescence, the emission wavelengths are respectively at 450 nm or so, and are within the range of blue-ray, and can be used as materials for organic electroluminescence devices.

The invention discloses an organic light emission diode and a preparation method thereof. The organic light emission diode comprises a substrate, an anode layer, an organic function layer and a cathode layer which are in stack combination in sequence. The organic function layer comprises a hole transfer layer, a light-emitting layer, an organometallic complex barrier layer, an n-dopant-doped organometallic complex barrier layer and an electron transfer layer which are in stack combination in sequence. A preparation method comprises the steps of providing the substrate, preparing the anode layer, preparing the organic function layer comprising the n-dopant-doped barrier layer, and preparing the cathode layer and the like. The organic light emission diode has excellent use stability, long service life, and excellent luminous efficiency; the process is simple and easy to control the condition; the qualified rate of the finished product is high; the production efficiency is improved effectively; the production cost is reduced; and the organic light emission diode and the preparation method are suitable for industrialized production.