4 results about "Organic light-emitting transistor" patented technology

This disclosure relates to an organic light-emitting transistor (OLED) and its fabrication method, a display panel, and a display device. At least a portion of a first micro / nano grating structure (71) is provided on the side of the electron transport layer (7) away from the substrate (1), such that at least a portion of a second micro / nano grating structure (82) is formed on the side of the first electrode (8) away from the substrate (1). The first micro / nano grating structure (71) and the second micro / nano grating structure (82) can reduce the wave vector within the waveguide effect surface, thereby effectively reducing the in-plane wave vector. When the in-plane wave vector is less than the wave vector in free space, the excited plasma mode is converted into an emissive mode, effectively extracting the emitted light. This effectively reduces energy loss caused by the OLED surface plasma mode and improves the OLED's luminous efficiency.

An organic light-emitting transistor and a preparation method thereof, and a light-emitting panel, the organic light-emitting transistor comprising: a substrate; a gate electrode layer arranged on one side of the substrate; a gate insulating layer arranged on a side of the gate electrode layer away from the substrate; a first source electrode arranged on a side of the gate insulating layer away from the substrate; a light-emitting functional layer arranged on a side of the first source electrode away from the substrate; and a first drain electrode arranged on a side of the light-emitting functional layer away from the substrate, wherein a surface of the first source electrode away from the substrate has a first optical grating structure. The organic light-emitting transistor of the embodiment of the present disclosure sets the surface of the first source electrode as an optical grating structure, which can weaken the waveguide effect, the substrate effect and the SPP effect caused by the difference in the refractive index between the internal film layers of the device, etc., so that more photons become effective photons, thereby enabling more light to be emitted from the organic light-emitting transistor and improving the efficiency of the organic light-emitting transistor.

The application provides an organic light-emitting transistor and a preparation method thereof, a display panel and a display device. The organic light-emitting transistor comprises a substrate, an auxiliary gate electrode, a first gate insulating layer, a source electrode and a drain electrode, an organic semiconductor layer, a second gate insulating layer and a control gate electrode. The auxiliary gate electrode is located on one side of the substrate. The first gate insulating layer is located on the side, away from the substrate, of the auxiliary gate electrode. The source electrode and the drain electrode are located on the side, away from the substrate, of the first gate insulating layer. The organic semiconductor layer is located on the side, away from the substrate, of the first gate insulating layer. The second gate insulating layer is located on the side, away from the substrate, of the organic semiconductor layer. The control gate electrode is located on the side, away from the substrate, of the second gate insulating layer. The auxiliary gate electrode is used for regulating the electrical properties of the organic light-emitting transistor. The organic light-emitting transistor provided by the application can avoid the capture of electrons in the organic semiconductor layer by the interface between the first gate insulating layer and the organic semiconductor layer, ensure the stability of the current in the working process of the device, and avoid the occurrence of brightness fluctuation.

The application belongs to the field of organic semiconductor polymer photoelectric materials, and solves the problem that most conjugated polymers are difficult to simultaneously realize high carrier mobility and strong light emitting performance through molecular design. The pyrrolopyrrolopyridine polymer based on quinoline side groups provided by the application can be used as channel material of organic field effect transistor (OFET), light emitting layer of organic light emitting diode (OLED) and active layer material of organic light emitting transistor (OLET), and has a structure as shown in Figure 1. The QDPP compound provided by the application has good thermal stability, balanced bipolar transmission characteristics and high photoluminescence quantum yield.