13 results about "Organic light-emitting transistor" patented technology

The application discloses an organic light-emitting transistor, a manufacturing method, a display device and an illuminating device. The organic light-emitting transistor of one embodiment comprises a gate electrode, a gate insulating layer, an active layer, a source electrode and a drain electrode arranged on a substrate, wherein the gate insulating layer comprises an elastomer polymer which deforms to increase the capacitance of the organic light-emitting transistor in response to external pressure. The organic light-emitting transistor provided by the embodiment of the application deforms in response to external pressure by the gate insulating layer comprising the elastomer polymer and increases the capacitance of the organic light-emitting transistor, thereby increasing the current flowing through the organic light-emitting transistor and increasing the luminous brightness of the organic light-emitting material in the organic light-emitting transistor. When the organic light-emitting transistor of the embodiment of the application is applied to the illuminating device, the illuminating brightness can be increased by applying pressure to the illuminating device, and the application prospect is wide.

The invention relates to a display panel and preparation thereof. The display panel at least comprises a substrate, and a conductive layer, an insulating layer, a charge transport layer and a light-emitting layer which are formed on the substrate, a plurality of basic pixel units arranged in an array mode are formed on a substrate of the display panel, each basic pixel unit at least comprises a switch transistor, an energy storage capacitor and an organic light-emitting transistor, and the switch transistor, the energy storage capacitor and the organic light-emitting transistor are electrically connected. According to the display panel, all the organic layers are completed through the photoetching technology, an expensive fine mask plate is not needed, the production process can be simplified, the production cost can be reduced, and the product competitiveness can be improved.

The invention discloses an organic semiconductor material containing a sulfuryl structure as shown in a formula (I) as well as a preparation method and application of the organic semiconductor material. According to the invention, a bromine-substituted sulfuryl-containing condensed ring structure is taken as a substrate, substituent groups are reasonably selected, and the organic semiconductor material with strong luminescence characteristic as shown in the formula (I) is prepared through Suzuki coupling reaction. The organic semiconductor material containing the sulfuryl structure has typical bipolar electrical characteristics, and has practical application value in the organic electronics fields of organic light-emitting diodes, organic field effect transistors, organic light-emitting transistors and the like.

An object of the present invention is to provide a display using a vertical organic light emitting transistor in which voltage fluctuation of a current supply line is reduced. A liquid crystal display device includes: a substrate; a plurality of vertical organic light emitting transistors; a data line that supplies a voltage to a gate electrode of the vertical organic light emitting transistor; a thin film transistor that is connected between the gate electrode of each of the vertical organic light emitting transistors and the data line and controls the supply of voltage to the gate electrode of the vertical organic light emitting transistor; a gate line that is connected to the gate electrode of the thin film transistor and transmits a signal for switching the thin film transistor; and a plurality of current supply lines that are wired outside a formation region of the vertical organic light emitting transistor in a first direction, the current supply lines being in contact with a source electrode of the vertical organic light emitting transistor to supply current to the vertical organic light emitting transistor.

The application discloses a kind of low-voltage high-performance organic light-emitting transistor (OLETs) based on full-layer heterojunction.The OLET of the application adopts full-layer heterojunction structure, comprising drain electrode, drain electrode modification layer, electron transport layer, light-emitting layer, source electrode, source electrode modification layer, hole transport layer, insulating layer, gate electrode and glass substrate in turn from top to bottom.The OLET of the application adopts the device structure of non-planar asymmetric electrode, the gate electrode adopts the double-layer heterojunction structure of high-conductivity material and high-transparency material;The insulating layer adopts the double-layer heterojunction structure of high-dielectric constant material and high-hydrophobic material;The transport layer adopts the double-layer heterojunction structure of high-charge transport material and energy level matching material;The light-emitting layer adopts the double-layer heterojunction structure of P-type host-guest doping and N-type host-guest doping.The OLET of the full-layer heterojunction simultaneously realizes low-voltage, high brightness, high external quantum efficiency, large aperture ratio, high stability and performance uniform OLETs.

The method for producing the vertical organic light emitting transistor device comprises: a step (A) in which a substrate having a main surface on which the vertical organic light emitting transistor device is to be formed is prepared; a step (B) in which an organic material containing a polymer having a hydrocarbon group is applied onto the main surface of the substrate; a step (C) in which a dispersion liquid containing a dispersant and a carbon material is applied to the organic material layer formed in the step (B); a step (D) in which the coating film formed in the step (C) is dried; and a step (E) in which, after performing step (D), a cleaning fluid is applied to remove the dispersant.

The invention discloses an asymmetric organic light-emitting transistor with a horizontal-vertical transmission channel and a method and application thereof, and belongs to the technical field of organic light-emitting transistors. The invention discloses an asymmetric organic light-emitting transistor with a horizontal-vertical transmission channel. The asymmetric organic light-emitting transistor comprises a substrate, a gate electrode, a double-gate electrode layer and an organic channel semiconductor layer which are sequentially arranged from bottom to top, the device further comprises a source electrode layer and a drain electrode. A plurality of layers of organic light-emitting units are also arranged between the source electrode layer and the organic channel semiconductor layer; the multiple layers of organic light-emitting units are of a vertical stacking structure; the source electrode layer is arranged on one side of the organic channel semiconductor layer and is in transverse contact with the organic channel semiconductor layer; the drain electrode is arranged at the top of the multi-layer organic light-emitting unit; and the electrode layer, the drain electrode and the gate electrode are arranged in a spatial non-coplanar manner. The transistor provided by the invention realizes a light-emitting device unit which is high in structural integration level, clear in charge injection path and adaptive to patterned array construction.

This disclosure relates to an organic light-emitting transistor (OLED) and its fabrication method, a display panel, and a display device. At least a portion of a first micro / nano grating structure (71) is provided on the side of the electron transport layer (7) away from the substrate (1), such that at least a portion of a second micro / nano grating structure (82) is formed on the side of the first electrode (8) away from the substrate (1). The first micro / nano grating structure (71) and the second micro / nano grating structure (82) can reduce the wave vector within the waveguide effect surface, thereby effectively reducing the in-plane wave vector. When the in-plane wave vector is less than the wave vector in free space, the excited plasma mode is converted into an emissive mode, effectively extracting the emitted light. This effectively reduces energy loss caused by the OLED surface plasma mode and improves the OLED's luminous efficiency.

An organic light-emitting transistor and a preparation method thereof, and a light-emitting panel, the organic light-emitting transistor comprising: a substrate; a gate electrode layer arranged on one side of the substrate; a gate insulating layer arranged on a side of the gate electrode layer away from the substrate; a first source electrode arranged on a side of the gate insulating layer away from the substrate; a light-emitting functional layer arranged on a side of the first source electrode away from the substrate; and a first drain electrode arranged on a side of the light-emitting functional layer away from the substrate, wherein a surface of the first source electrode away from the substrate has a first optical grating structure. The organic light-emitting transistor of the embodiment of the present disclosure sets the surface of the first source electrode as an optical grating structure, which can weaken the waveguide effect, the substrate effect and the SPP effect caused by the difference in the refractive index between the internal film layers of the device, etc., so that more photons become effective photons, thereby enabling more light to be emitted from the organic light-emitting transistor and improving the efficiency of the organic light-emitting transistor.

The application provides an organic light-emitting transistor and a preparation method thereof, a display panel and a display device. The organic light-emitting transistor comprises a substrate, an auxiliary gate electrode, a first gate insulating layer, a source electrode and a drain electrode, an organic semiconductor layer, a second gate insulating layer and a control gate electrode. The auxiliary gate electrode is located on one side of the substrate. The first gate insulating layer is located on the side, away from the substrate, of the auxiliary gate electrode. The source electrode and the drain electrode are located on the side, away from the substrate, of the first gate insulating layer. The organic semiconductor layer is located on the side, away from the substrate, of the first gate insulating layer. The second gate insulating layer is located on the side, away from the substrate, of the organic semiconductor layer. The control gate electrode is located on the side, away from the substrate, of the second gate insulating layer. The auxiliary gate electrode is used for regulating the electrical properties of the organic light-emitting transistor. The organic light-emitting transistor provided by the application can avoid the capture of electrons in the organic semiconductor layer by the interface between the first gate insulating layer and the organic semiconductor layer, ensure the stability of the current in the working process of the device, and avoid the occurrence of brightness fluctuation.

The invention relates to a synthesis method of several deuterated small molecular materials with anthracene skeletons, which starts from three small molecular materials with high mobility and strong luminescence, namely 2, 6-diphenyl anthracene (DPA), 2, 6-dinaphthyl anthracene (dNaAnt) and 2, 6-dianthryl naphthalene (2, 6-DAN), and realizes selective deuteration of different sites on an aromatic ring. The preparation method is used for preparing the organic light-emitting transistor with high mobility and strong luminescence. Various deuterated small molecules provided by the invention have important application potential and value in the field of preparation of devices such as organic light-emitting transistors (OLET) and the like.

The application belongs to the field of organic semiconductor polymer photoelectric materials, and solves the problem that most conjugated polymers are difficult to simultaneously realize high carrier mobility and strong light emitting performance through molecular design. The pyrrolopyrrolopyridine polymer based on quinoline side groups provided by the application can be used as channel material of organic field effect transistor (OFET), light emitting layer of organic light emitting diode (OLED) and active layer material of organic light emitting transistor (OLET), and has a structure as shown in Figure 1. The QDPP compound provided by the application has good thermal stability, balanced bipolar transmission characteristics and high photoluminescence quantum yield.

The method for producing a vertical organic light-emitting transistor device includes: a step (A) in which a substrate having a main surface, on which the vertical organic light-emitting transistor device is to be formed, is prepared; a step (B) in which an organic material containing a polymer having a hydrocarbon group is applied onto the main surface of the substrate; a step (C) in which a dispersion liquid containing a dispersant and a carbon material is applied onto an organic material layer formed in the step (B); a step (D) in which a coating film formed in the step (C) is dried; and a step (E) in which after the step (D) is performed, a cleaning fluid is applied to remove the dispersant.