QLED device, display device and preparation method of display device
A device and interface modification technology, which is applied in semiconductor/solid-state device manufacturing, electric solid-state devices, semiconductor devices, etc., can solve the problems of short service life, unbalanced carrier injection, low power efficiency, etc., and achieve less transmission loss, The effect of improving the overall efficiency and reducing the driving voltage
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[0033] Example one:
[0034] A QLED device includes a substrate 1, a bottom electrode 2, a hole transport layer 3, a quantum dot light-emitting layer 4, an electron transport layer 5, and a top electrode 6 arranged in sequence, and also includes a 5wt% doping with PEDOT:PSS:PFI Hole injection layer 7 made of DMSO. Among them, the substrate 1 is a glass base; the material of the bottom electrode 2 is ITO with a thickness of 120nm; the thickness of the hole injection layer 7 is 40nm, and the weight ratio of PEDOT:PSS:PFI is 1:2.5:11.2; the hole transport layer The material of 3 is TFB with a thickness of 25 nm; the material of the quantum dot light-emitting layer 4 is CdSe / ZnS QDs with a thickness of 40 nm; the material of the electron transport layer 5 is nano-zinc oxide with a thickness of 20 nm; the material of the top electrode 6 is Al.
[0035] In the embodiment of the present invention, 5wt% DMSO is doped with PEDOT:PSS:PFI, so that the work function of the hole injection laye...
Example Embodiment
[0036] Embodiment two:
[0037] A QLED device includes a substrate 1, a bottom electrode 2, a hole transport layer 3, a quantum dot light-emitting layer 4, an electron transport layer 5, and a top electrode 6 arranged in sequence, and also includes a PEDOT:PSS thin film doped with a thickness of 40 nm Hole injection layer 7 made of multi-walled carbon nanotubes doped with 0.1 wt%. Among them, the substrate 1 is a glass substrate; the material of the bottom electrode 2 is ITO with a thickness of 120nm; the material of the hole transport layer 3 is TFB with a thickness of 25nm; the material of the quantum dot light-emitting layer 4 is CdSe / ZnS QDs with a thickness of 40nm; the material of the electron transport layer 5 is nano-zinc oxide with a thickness of 20nm; the material of the top electrode 6 is Al.
[0038] In this embodiment, the PEDOT:PSS thin film is doped with 0.1wt% multi-walled carbon nanotubes, so that the conductivity of the hole injection layer 7 is improved compared...
Example Embodiment
[0039] Embodiment three:
[0040] A QLED device includes a substrate 1, a bottom electrode 2, a hole transport layer 3, a quantum dot light-emitting layer 4, an electron transport layer 5, and a top electrode 6 arranged in sequence, and also includes a PEDOT:PSS thin film doped with a thickness of 40 nm A hole injection layer 7 made of 6wt% liquid bromine. Among them, the substrate 1 is a glass substrate; the material of the bottom electrode 2 is ITO with a thickness of 120nm; the material of the hole transport layer 3 is TFB with a thickness of 25nm; the material of the quantum dot light-emitting layer 4 is CdSe / ZnS QDs with a thickness of 40nm; the material of the electron transport layer 5 is nano-zinc oxide with a thickness of 20nm; the material of the top electrode 6 is Al.
[0041] In this embodiment, the PEDOT:PSS thin film is doped with 6wt% liquid bromine, so that the conductivity of the hole injection layer 7 is increased by 300 times compared with the conductivity of th...
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