32results about How to "Lower hole injection barrier" patented technology

The invention discloses an organic electroluminescent display device, which comprises a glass substrate and an ITO conductive layer arranged on the upper surface of the glass substrate, wherein an anode interface modification layer, a hole transport layer, an electron transport layer, a luminescent layer, a metal cathode Mg layer and a metal cathode Al layer are sequentially arranged on the ITO conductive layer, and the anode interface modification layer is ZnO-doping PEDOT: PSS. The device takes the ZnO-doping PEDOT: PSS as the anode interface modification layer so as to reduce the hole injection barrier of a PEDOT: PSS layer and an ITO interface and improve the composite efficiency of holes and electrons, and meanwhile, the ZnO-doping PEDOT: PSS is also taken as a light scattering layer, so that crystal scattering can increase the luminous flux of the PEDOT: PSS layer, reduces the possibility that total-internal emission occurs among organic layers of a luminescent device, and improves the luminescent efficiency and brightness of organic OLED.

The invention discloses a quantum dot electroluminescent device and a preparation method thereof. In order to reduce the hole injection barrier of a quantum dot light emitting diode device, small molecular materials containing polar coordination groups of lone pair electrons, such as materials containing amino groups, mercapto groups or phosphorus groups, are dissolved in a proton solvent throughin-situ ligand replacement and the obtained product is applied to a filmed quantum dot layer after heat treatment during the preparation of the quantum dot light emitting diode device. Because of thepolar coordination groups (amino groups, mercapto groups and phosphorus groups) of lone pair electrons, a larger interface dipole is introduced, the hole injection barrier is reduced, the hole electron flow is balanced, and the device performance is improved. The surface defects of the quantum dot film are passivated, and exciton quenching is reduced. The method has the characteristics of wide applicability, high efficiency and simplicity.

The invention relates to the technical field of organic light-emitting diode manufacturing, in particular to preparation of a top-emitting organic light-emitting diode (OLED) device anode structure. The top-emitting OLED device anode structure is characterized in that four layers of thin films cover a substrate, a base compatible layer, a middle reflectivity layer, a energy level matching layer and an anode modifying layer are respectively arranged on the substrate from bottom to top, multifunctionality of an anode is achieved through adoption of the design of a multi-layer thin film structure, light-emitting efficiency of a top-emitting OLED device is obviously improved, and the service life of the top-emitting OLED device is obviously prolonged. Furthermore, due to the fact that the anode is prepared by materials which are not prone to occurrence of element diffusion, probability of occurrence of shot circuit of device pixels due to the element diffusion is reduced. Due to adoption of metallic simple substance or alloy or metallic compound, raw materials can be easily obtained and are low in price, and thin film preparation methods are various.

The invention discloses a low-roll-off quasi-two-dimensional perovskite light-emitting diode and a preparation method thereof. The low-roll-off quasi-two-dimensional perovskite light-emitting diode issequentially provided with a cathode, a hole transport layer, a hole transport layer and light-emitting layer interface modification layer, a perovskite light-emitting layer, a light-emitting layer and electron transport interface modification layer, an electron transport layer, an electron injection layer and an anode from bottom to top. By modifying the interface of the hole transport layer andthe perovskite light-emitting layer, the hole injection barrier between the hole layer and the light-emitting layer is reduced, the hole injection efficiency is improved, the hole layer can be prevented from quenching the perovskite layer, and the light-emitting efficiency of the perovskite layer is improved. The interface of the perovskite light-emitting layer and the electron transport layer isalso modified, so that the defect state of the perovskite surface can be passivated, the film quality of the light-emitting layer is improved, non-radiative recombination is inhibited, and the light-emitting efficiency of the device is further improved.

The invention relates to the technical field of display, and discloses an organic light emitting device and an organic light emitting apparatus. The organic light emitting device comprises a first electrode layer, carrier function layers, a light emitting layer and a second electrode layer which are stacked together. At least one carrier function layer near the light emitting layer is doped with materials in the light emitting layer. The setting of the carrier function layers is helpful to improve carrier mobility. High carrier mobility can effectively reduce the turn-on voltage of the deviceand improve the power efficiency of the device. As at least one carrier function layer near the light emitting layer is doped with materials in the light emitting layer, the matching degree between the energy level of the light emitting layer and the energy level of the carrier function layer near the light emitting layer is improved, the energy level difference between the light emitting layer and the carrier function layer is reduced, the injection barrier of carriers is reduced, and therefore, the turn-on voltage of the organic light emitting device is reduced.

An inverted blue light quantum-dot thin film electroluminescence device disclosed by the present invention comprises a substrate, a cathode, an electronic transmission layer, a blue light quantum-dot luminescent layer, hole transport layers and an anode which are laminated orderly, and the hole transport layers comprise a third hole transport layer, a second hole transport layer and a first hole transport layer which are laminated orderly. The thickness of the third hole transport layer is between 5 nm and 10 nm, and the HOMO energy level of the second hole transport layer is greater than the HOMO energy level of the first hole transport layer, thereby forming the ladder-like potential barrier between the blue light quantum-dot luminescent layer and the anode, improving the hole-injection ability of the hole transport layers gradually, and satisfying the hole injection requirement of the blue light quantum-dot thin film electroluminescence device. The electroluminescence device of the present invention is low in hole injection barrier and high in carrier direct injection mechanism and luminous efficiency. The present invention also provides a method for preparing the above inverted blue light quantum-dot thin film electroluminescence device.

The invention discloses a quantum dot light-emitting diode and a preparation method thereof. The quantum dot light-emitting diode comprises a substrate, an anode layer, a hole injection functional layer, a quantum dot light-emitting layer, an electron transport layer and a cathode layer; a perfluorinated ion polymer is led into a hole injection layer or a hole transport layer, so that the hole injection functional layer can be formed. According to the quantum dot light-emitting diode and the preparation method thereof of the invention, the perfluorinated ion polymer is led into the hole injection layer or the hole transport layer, so that a work function gradually changed hole injection layer or hole transport layer can be formed, and therefore, a hole injection barrier at an interface can be reduced, and hole injection can be improved; and the structure of the device can be simplified, the use of a multilayer structure can be avoided, and therefore, hole injection can be improved, and preparation cost can be saved.

An organic electroluminescent component comprises a conductive anode substrate, and a hole injection layer, a hole transmission layer, a luminescent layer, an electron transmission layer and a cathode which are sequentially laminated on an anode layer of the conductive anode substrate, wherein the hole injection layer comprises a first hole injection auxiliary layer laminated on the anode layer and a second hole injection auxiliary layer laminated on the first hole injection auxiliary layer; the first hole injection auxiliary layer is made of copper oxide, cuprous oxide, copper fluoride or cuprous fluoride; the second hole injection auxiliary layer is made of nickel oxide. The organic electroluminescent component uses two hole injection auxiliary layers, so that the hole injection efficiency is improved and further the luminescent efficiency of the organic electroluminescent component is improved. The invention further provides a manufacturing method of the organic electroluminescent component.

The invention belongs to the technical field of display, and particularly relates to a quantum dot light emitting diode and a preparation method thereof. A quantum dot light-emitting diode comprises an anode, a cathode and a quantum dot light-emitting layer located between the anode and the cathode; a material layer composed of organic molecules is arranged between the anode and the quantum dot light-emitting layer, and the organic molecules contain electron withdrawing groups. The material layer composed of the electron withdrawing group-containing organic molecules can reduce the hole injection barrier from the anode to the quantum dot material, thereby improving the hole injection efficiency of the device, enabling the injection of holes and electrons to be more balanced, and finally improving the performance of the device.

The invention provides a quantum dot light-emitting diode. The quantum dot light-emitting diode comprises an anode and a cathode which are oppositely arranged, a quantum dot light-emitting layer arranged between the anode and the cathode, and a hole function lamination layer arranged between the anode and the quantum dot light-emitting layer, wherein the hole function lamination layer comprises ahole injection layer, a hole transport layer arranged on the hole injection layer and an interface layer arranged between the hole injection layer and the hole transport layer, the hole injection layer is arranged adjacent to the anode, and the material of the hole injection layer contains a transition metal oxide; the hole transport layer is arranged adjacent to the quantum dot light-emitting layer, and the material of the hole transport layer contains an organic hole transport material; and the interface layer is made of a graphene material.

Provided is a method for preparing a low-voltage driving organic light-emitting diode (OLED) in a p-i-n structure by a solution method. The OLED device is formed by superposing a transparent ITO glasssubstrate, a p-type doped transmission layer, a light-emitting layer, an n-type doped transmission layer, an electronic buffer layer and a metal back electrode. By introducing the composite materialPTAA: AgNWs into the OLED device, the transmission performance of the hole transport layer can be effectively improved, and the hole injection barrier is reduced, so that the driving voltage of the device is reduced; Preparation of PEI: SnS2-by solution process And the QDs are used as an electron transmission layer of the OLED device, so that the injection and transmission capabilities of electrons in the device are further improved. And finally, the light-emitting efficiency of the OLED device is effectively improved while the driving voltage of the device is reduced.

The invention discloses an organic electroluminescent device. The organic electroluminescent device comprises a conductive anode substrate as well as a ,hole transport layer, a light-emitting layer, an electronic transmission layer and a cathode which are stacked on an anode layer of the conductive anode substrate in sequence, wherein the anode layer is made from indium tin oxide; materials of the hole transport layer comprise the organic hole transport material and a doping material doped in the organic hole transport material; the doping material is an oxide of copper or a fluoride of copper; the oxide of the copper is at least one of copper oxide and cuprous oxide; the fluoride of the copper is at least one of copper fluoride and cuprous fluoride; HOMO energy level of the organic hole transport layer is 5.0 eV-5.4 eV; a mass ratio of the doping material to the organic hole transport material is (5:100) to (30:100). The organic electroluminescent device is relatively high in light-emitting efficiency. The invention further provides a preparation method for the organic electroluminescent device.

The invention discloses a nickel oxide film and a preparation method thereof, and a quantum dot light emitting diode, and the nickel oxide film comprises a nickel oxide film layer and a Cl-Ni bond connected to the surface of the nickel oxide film layer. The Cl-Ni bond combined on the surface of the nickel oxide film layer can improve the electrostatic potential energy of electrons on the surface of the nickel oxide film layer, so that the surface work function of the nickel oxide film is improved. When the nickel oxide thin film is applied to a quantum dot light emitting diode as a hole transport layer, the nickel oxide thin film with a relatively high surface work function can reduce a hole injection barrier between the nickel oxide thin film and the quantum dot light emitting layer, so that the light emitting efficiency of a QLED is improved; the Cl-Ni polar bond can also reduce the roughness of the surface of the nickel oxide thin film, so that deposition of the quantum dot light emitting layer is facilitated, interface defects between the hole transport layer and the quantum dot light emitting layer can be reduced, carrier transport traps and a non-radiative recombination center are reduced, and the light-emitting efficiency of the QLED is improved.

The invention discloses a general formula compound with the following structure, wherein R1 is selected from C6-C30 aryl or fused ring aryl, C3-C30 heterocyclic aryl or fused ring heteroaryl; R2 and R3 are independently selected from hydrogen, C1-C12 alkyl, C1-C8 alkoxy, C6-C30 aryl or fused ring aryl, C3-C30 heterocyclic aryl or fused ring heteroaryl; M and n are each independently selected fromintegers of 1 to 4; L is selected from single bonds, or C1-C12 alkyl, C1-C8 alkoxy, C5-C30 arylene, C3-C30 heterocyclic arylene; Ar1 and Ar2 are independently selected from C6-C30 aryl or fused ring aryl respectively; Ar3 and Ar4 are independently selected from C6-C30 aryl or fused ring aryl, C3-C30 heterocyclic aryl or fused ring heteroaryl respectively. The invention also protects the organic electroluminescent device adopting the general formula compound. When the compound is used as a hole transport material in an OLED light emitting layer, the compound exhibits excellent device performance and stability.

The invention discloses a light-emitting field effect transistor with a dielectric layer/quantum dot/dielectric layer structure and a preparation method thereof. A grid, an insulating layer, an electron transport layer, a first dielectric layer, Quantum dot light-emitting layer, second dielectric layer, hole transport layer, source/drain, the first dielectric layer modifies the interface between the electron transport layer and the quantum dot light-emitting layer, and the second dielectric layer modifies the interface between the quantum dot light-emitting layer and the hole Cave transport layer interface. Modifying the interface between the quantum dot light-emitting layer and the hole transport layer through a dielectric layer not only reduces the hole injection barrier between the hole transport layer and the light-emitting layer, but also reduces the pinholes in the light-emitting layer, improves the hole injection efficiency, and reduces the Non-radiative recombination significantly improves the luminous efficiency of light-emitting field-effect transistors. The invention also uses a dielectric layer to modify the interface between the electron transport layer and the quantum dot light-emitting layer, which can reduce the trap density inside the electron transport layer and inhibit non-radiative recombination, thereby further improving the luminous efficiency of the device.

The invention discloses an organic electroluminescence device which comprises a glass substrate, a scattering layer, an anode, a hole injection layer, a hole transmission layer, a light emitting layer, an electron transfer layer, an electron injection layer and a cathode which are overlapped in sequence, wherein the scattering layer comprises a metal material, a hole transfer material and a light emitting material; the power function of the metal material is minus 2.0-minus 3.5eV; the hole transfer material is selected from at least one of 1,1-di[4-[N,N'-di(p-cresyl)amino]phenyl]cyclohexane, 4,4',4''-tri(carbazole-9-yl)triphenylamine and N,N'-(1-naphthyl)-N,N'-diphenyl-4,4'-benzidine. The organic electroluminescence device disclosed by the invention is relatively high in light emission efficiency. The invention further provides a preparation method of the organic electroluminescence device.

The invention provides an organic light-emitting device. The organic light-emitting device comprises an anode, a hole injection layer, a first hole transport layer, a first light-emitting layer, a first electron transport layer, a charge generation layer, a second hole transport layer, a second light-emitting layer, a second electron transport layer, an electron injection layer and a cathode which are laminated sequentially. The charge generation layer comprises a metal oxide layer laminated on the surface of the first electron transport layer and a ternary doped layer formed on the surface of the metal oxide layer, the metal oxide layer is made of materials selected from at least one of molybdenum trioxide, tungsten trioxide and vanadium pentoxide, the ternary doped layer is made of materials including phthalocyanine compounds, metal and hole transport materials, a mass ratio between the metal and the phthalocyanine compounds in the ternary doped layer is 1:50-1:5, and a mass ration between the hole transport materials and the phthalocyanine compounds in the ternary doped layer is 1:1000-1:10. The organic light-emitting device is high in light emitting efficiency. The invention further provides a production method of the organic light-emitting device.