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32results about How to "Lower hole injection barrier" patented technology
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Organic electroluminescent display device
InactiveCN101587941AIncrease luminous fluxLower hole injection barrierSolid-state devicesSemiconductor/solid-state device manufacturingOrganic layerLuminous flux
The invention discloses an organic electroluminescent display device, which comprises a glass substrate and an ITO conductive layer arranged on the upper surface of the glass substrate, wherein an anode interface modification layer, a hole transport layer, an electron transport layer, a luminescent layer, a metal cathode Mg layer and a metal cathode Al layer are sequentially arranged on the ITO conductive layer, and the anode interface modification layer is ZnO-doping PEDOT: PSS. The device takes the ZnO-doping PEDOT: PSS as the anode interface modification layer so as to reduce the hole injection barrier of a PEDOT: PSS layer and an ITO interface and improve the composite efficiency of holes and electrons, and meanwhile, the ZnO-doping PEDOT: PSS is also taken as a light scattering layer, so that crystal scattering can increase the luminous flux of the PEDOT: PSS layer, reduces the possibility that total-internal emission occurs among organic layers of a luminescent device, and improves the luminescent efficiency and brightness of organic OLED.
Owner:IRICO
Quantum dot electroluminescent device and preparation method thereof
InactiveCN110224074ALower hole injection barrierBalanced hole electron flowSolid-state devicesSemiconductor/solid-state device manufacturingSolventQuantum dot
The invention discloses a quantum dot electroluminescent device and a preparation method thereof. In order to reduce the hole injection barrier of a quantum dot light emitting diode device, small molecular materials containing polar coordination groups of lone pair electrons, such as materials containing amino groups, mercapto groups or phosphorus groups, are dissolved in a proton solvent throughin-situ ligand replacement and the obtained product is applied to a filmed quantum dot layer after heat treatment during the preparation of the quantum dot light emitting diode device. Because of thepolar coordination groups (amino groups, mercapto groups and phosphorus groups) of lone pair electrons, a larger interface dipole is introduced, the hole injection barrier is reduced, the hole electron flow is balanced, and the device performance is improved. The surface defects of the quantum dot film are passivated, and exciton quenching is reduced. The method has the characteristics of wide applicability, high efficiency and simplicity.
Owner:SOUTH CHINA UNIV OF TECH
Organic light-emitting device
InactiveCN105514291AReduce the number of evaporation sourcesReduce in quantitySolid-state devicesSemiconductor/solid-state device manufacturingOrganic light emitting deviceHost material
The invention relates to an organic light-emitting device (OLED). The hole transport layer used by the OLED comprises a first hole material layer, a transition layer formed by a first hole transport material and a second hole transport material, and a second hole material layer, wherein the first hole material layer, the transition layer, and the second hole material layer are stacked. The first hole material layer is arranged close to a first electrode layer. The dosage concentration of the second hole transport material in the transition layer is gradually increased along the direction far from the first hole transport material layer. An energy level difference between the HOMO of the second hole transport material HTL2 and the HOMO of the host material of a light-emitting layer is less than 0.5eV, namely HTL2HOMO-HOSTHUMO is less than or equal to 0.5eV. The energy gap Eg of the HTL2 is over 0.3eV greater than that of the light-emitting host, namely HTL2Eg-HOSTEg is less than or equal to 0.3eV. The energy gap of the host material of the light-emitting layer is from 2.5 to 3.5eV. The hole transport layer forms continuous concentration gradient structure by using the evaporation of a linear evaporator source so as to reduce the number of evaporation chamber evaporation sources and greatly reduce hole injection barrier. Therefore, the voltage of the device can be obviously decreased and efficiency is increased.
Owner:GUAN YEOLIGHT TECH CO LTD
Top-emitting organic light-emitting diode (OLED) device anode structure and preparation technology thereof
ActiveCN103219472AIncreased versatilityImprove reflectivitySolid-state devicesSemiconductor/solid-state device manufacturingPhysical chemistryThin membrane
The invention relates to the technical field of organic light-emitting diode manufacturing, in particular to preparation of a top-emitting organic light-emitting diode (OLED) device anode structure. The top-emitting OLED device anode structure is characterized in that four layers of thin films cover a substrate, a base compatible layer, a middle reflectivity layer, a energy level matching layer and an anode modifying layer are respectively arranged on the substrate from bottom to top, multifunctionality of an anode is achieved through adoption of the design of a multi-layer thin film structure, light-emitting efficiency of a top-emitting OLED device is obviously improved, and the service life of the top-emitting OLED device is obviously prolonged. Furthermore, due to the fact that the anode is prepared by materials which are not prone to occurrence of element diffusion, probability of occurrence of shot circuit of device pixels due to the element diffusion is reduced. Due to adoption of metallic simple substance or alloy or metallic compound, raw materials can be easily obtained and are low in price, and thin film preparation methods are various.
Owner:YUNNAN NORTH OLIGHTEK OPTO ELECTRONICS TECH
Low-roll-off quasi-two-dimensional perovskite light emitting diode and preparation method thereof
ActiveCN111192971ASolve the problem of serious efficiency roll-offImprove luminous efficiencySolid-state devicesSemiconductor/solid-state device manufacturingElectron holeElectron transporting layer
The invention discloses a low-roll-off quasi-two-dimensional perovskite light-emitting diode and a preparation method thereof. The low-roll-off quasi-two-dimensional perovskite light-emitting diode issequentially provided with a cathode, a hole transport layer, a hole transport layer and light-emitting layer interface modification layer, a perovskite light-emitting layer, a light-emitting layer and electron transport interface modification layer, an electron transport layer, an electron injection layer and an anode from bottom to top. By modifying the interface of the hole transport layer andthe perovskite light-emitting layer, the hole injection barrier between the hole layer and the light-emitting layer is reduced, the hole injection efficiency is improved, the hole layer can be prevented from quenching the perovskite layer, and the light-emitting efficiency of the perovskite layer is improved. The interface of the perovskite light-emitting layer and the electron transport layer isalso modified, so that the defect state of the perovskite surface can be passivated, the film quality of the light-emitting layer is improved, non-radiative recombination is inhibited, and the light-emitting efficiency of the device is further improved.
Owner:SHANGHAI UNIV
Organic light emitting apparatus and organic light emitting device
ActiveCN108963093AReduce the lighting voltageImprove efficiencySolid-state devicesSemiconductor/solid-state device manufacturingOrganic light emitting deviceCharge carrier
The invention relates to the technical field of display, and discloses an organic light emitting device and an organic light emitting apparatus. The organic light emitting device comprises a first electrode layer, carrier function layers, a light emitting layer and a second electrode layer which are stacked together. At least one carrier function layer near the light emitting layer is doped with materials in the light emitting layer. The setting of the carrier function layers is helpful to improve carrier mobility. High carrier mobility can effectively reduce the turn-on voltage of the deviceand improve the power efficiency of the device. As at least one carrier function layer near the light emitting layer is doped with materials in the light emitting layer, the matching degree between the energy level of the light emitting layer and the energy level of the carrier function layer near the light emitting layer is improved, the energy level difference between the light emitting layer and the carrier function layer is reduced, the injection barrier of carriers is reduced, and therefore, the turn-on voltage of the organic light emitting device is reduced.
Owner:YUNGU GUAN TECH CO LTD
Inverted blue light quantum-dot thin film electroluminescence device and manufacturing method thereof
InactiveCN105895816AReduce the driving voltageHigh Direct Injection MechanismSolid-state devicesSemiconductor/solid-state device manufacturingElectronic transmissionElectricity
An inverted blue light quantum-dot thin film electroluminescence device disclosed by the present invention comprises a substrate, a cathode, an electronic transmission layer, a blue light quantum-dot luminescent layer, hole transport layers and an anode which are laminated orderly, and the hole transport layers comprise a third hole transport layer, a second hole transport layer and a first hole transport layer which are laminated orderly. The thickness of the third hole transport layer is between 5 nm and 10 nm, and the HOMO energy level of the second hole transport layer is greater than the HOMO energy level of the first hole transport layer, thereby forming the ladder-like potential barrier between the blue light quantum-dot luminescent layer and the anode, improving the hole-injection ability of the hole transport layers gradually, and satisfying the hole injection requirement of the blue light quantum-dot thin film electroluminescence device. The electroluminescence device of the present invention is low in hole injection barrier and high in carrier direct injection mechanism and luminous efficiency. The present invention also provides a method for preparing the above inverted blue light quantum-dot thin film electroluminescence device.
Owner:SHANGHAI UNIV
Stacked organic light emitting device and preparation method thereof
InactiveCN104037329AAvoid reflectionsEnhanced electron transport capabilitiesSolid-state devicesSemiconductor/solid-state device manufacturingVanadium dioxidePhenanthroline
The invention relates to a stacked organic light emitting device and a preparation method thereof. The stacked organic light emitting device comprises an anode, a first light emitting unit, a charge generating layer, a second light emitting unit and a cathode which are sequentially stacked. The charge generating layer is formed by doping an electron transport material and a hole transport material in a metal oxide. The electron transport material is 4,7-diphenyl-1,10-phenanthroline, 1,2,4-triazole derivative or 2-(4'-tert-butytphenyl)-5-(4'-biphenylyl)-1,3,4-oxadiazole. The hole transport material is 2,3,5,6-tetrafluoro-7,7,8,8,-tetracyano-quinodimethane, 4,4,4-tri(naphthyl-1-phenyl-ammonium)triphenylamine or dinaphthyl-N,N'-diphenyl-4,4'-benzidine. The metal oxide is tantalum pentoxide, niobium pentoxide or vanadium dioxide. The light emitting efficiency of the stacked organic light emitting device is high.
Owner:OCEANS KING LIGHTING SCI&TECH CO LTD +2
Quantum dot light-emitting diode and preparation method thereof
InactiveCN105514290ASimple structureLower hole injection barrierSolid-state devicesSemiconductor/solid-state device manufacturingHole injection layerWork function
The invention discloses a quantum dot light-emitting diode and a preparation method thereof. The quantum dot light-emitting diode comprises a substrate, an anode layer, a hole injection functional layer, a quantum dot light-emitting layer, an electron transport layer and a cathode layer; a perfluorinated ion polymer is led into a hole injection layer or a hole transport layer, so that the hole injection functional layer can be formed. According to the quantum dot light-emitting diode and the preparation method thereof of the invention, the perfluorinated ion polymer is led into the hole injection layer or the hole transport layer, so that a work function gradually changed hole injection layer or hole transport layer can be formed, and therefore, a hole injection barrier at an interface can be reduced, and hole injection can be improved; and the structure of the device can be simplified, the use of a multilayer structure can be avoided, and therefore, hole injection can be improved, and preparation cost can be saved.
Owner:TCL CORPORATION
Organic electroluminescent component and manufacturing method thereof
InactiveCN104576954AEasy to prepareEasy to operateSolid-state devicesSemiconductor/solid-state device manufacturingHole injection layerCopper fluoride
An organic electroluminescent component comprises a conductive anode substrate, and a hole injection layer, a hole transmission layer, a luminescent layer, an electron transmission layer and a cathode which are sequentially laminated on an anode layer of the conductive anode substrate, wherein the hole injection layer comprises a first hole injection auxiliary layer laminated on the anode layer and a second hole injection auxiliary layer laminated on the first hole injection auxiliary layer; the first hole injection auxiliary layer is made of copper oxide, cuprous oxide, copper fluoride or cuprous fluoride; the second hole injection auxiliary layer is made of nickel oxide. The organic electroluminescent component uses two hole injection auxiliary layers, so that the hole injection efficiency is improved and further the luminescent efficiency of the organic electroluminescent component is improved. The invention further provides a manufacturing method of the organic electroluminescent component.
Owner:OCEANS KING LIGHTING SCI&TECH CO LTD +2
Quantum dot light-emitting diode and preparation method thereof
ActiveCN111384258ALower hole injection barrierImprove hole injection efficiencySolid-state devicesSemiconductor/solid-state device manufacturingPhysicsOrganic molecules
The invention belongs to the technical field of display, and particularly relates to a quantum dot light emitting diode and a preparation method thereof. A quantum dot light-emitting diode comprises an anode, a cathode and a quantum dot light-emitting layer located between the anode and the cathode; a material layer composed of organic molecules is arranged between the anode and the quantum dot light-emitting layer, and the organic molecules contain electron withdrawing groups. The material layer composed of the electron withdrawing group-containing organic molecules can reduce the hole injection barrier from the anode to the quantum dot material, thereby improving the hole injection efficiency of the device, enabling the injection of holes and electrons to be more balanced, and finally improving the performance of the device.
Owner:TCL CORPORATION
Quantum dot light-emitting diode and preparation method thereof
ActiveCN111384256AIncrease the number ofImprove injection efficiencySolid-state devicesSemiconductor/solid-state device manufacturingParticle physicsHole transport layer
The invention provides a quantum dot light-emitting diode. The quantum dot light-emitting diode comprises an anode and a cathode which are oppositely arranged, a quantum dot light-emitting layer arranged between the anode and the cathode, and a hole function lamination layer arranged between the anode and the quantum dot light-emitting layer, wherein the hole function lamination layer comprises ahole injection layer, a hole transport layer arranged on the hole injection layer and an interface layer arranged between the hole injection layer and the hole transport layer, the hole injection layer is arranged adjacent to the anode, and the material of the hole injection layer contains a transition metal oxide; the hole transport layer is arranged adjacent to the quantum dot light-emitting layer, and the material of the hole transport layer contains an organic hole transport material; and the interface layer is made of a graphene material.
Owner:TCL CORPORATION
Method for preparing low-voltage driving organic light-emitting diode in p-i-n structure by solution method
ActiveCN109585698AReduce the driving voltageImprove transmission performanceSolid-state devicesSemiconductor/solid-state device manufacturingLow voltageHole transport layer
Provided is a method for preparing a low-voltage driving organic light-emitting diode (OLED) in a p-i-n structure by a solution method. The OLED device is formed by superposing a transparent ITO glasssubstrate, a p-type doped transmission layer, a light-emitting layer, an n-type doped transmission layer, an electronic buffer layer and a metal back electrode. By introducing the composite materialPTAA: AgNWs into the OLED device, the transmission performance of the hole transport layer can be effectively improved, and the hole injection barrier is reduced, so that the driving voltage of the device is reduced; Preparation of PEI: SnS2-by solution process And the QDs are used as an electron transmission layer of the OLED device, so that the injection and transmission capabilities of electrons in the device are further improved. And finally, the light-emitting efficiency of the OLED device is effectively improved while the driving voltage of the device is reduced.
Owner:BINHAI IND RES INST OF TIANJIN UNIV CO LTD
Organic electroluminescent device and preparation method thereof
InactiveCN104576955AImprove luminous efficiencyImprove conductivitySolid-state devicesSemiconductor/solid-state device manufacturingElectronic transmissionCopper fluoride
The invention discloses an organic electroluminescent device. The organic electroluminescent device comprises a conductive anode substrate as well as a ,hole transport layer, a light-emitting layer, an electronic transmission layer and a cathode which are stacked on an anode layer of the conductive anode substrate in sequence, wherein the anode layer is made from indium tin oxide; materials of the hole transport layer comprise the organic hole transport material and a doping material doped in the organic hole transport material; the doping material is an oxide of copper or a fluoride of copper; the oxide of the copper is at least one of copper oxide and cuprous oxide; the fluoride of the copper is at least one of copper fluoride and cuprous fluoride; HOMO energy level of the organic hole transport layer is 5.0 eV-5.4 eV; a mass ratio of the doping material to the organic hole transport material is (5:100) to (30:100). The organic electroluminescent device is relatively high in light-emitting efficiency. The invention further provides a preparation method for the organic electroluminescent device.
Owner:OCEANS KING LIGHTING SCI&TECH CO LTD +2
Nickel oxide film and preparation method thereof, and quantum dot light emitting diode
InactiveCN110970534AHigh surface work functionIncrease electrostatic potential energySemiconductor devicesElectron holeQuantum dot
The invention discloses a nickel oxide film and a preparation method thereof, and a quantum dot light emitting diode, and the nickel oxide film comprises a nickel oxide film layer and a Cl-Ni bond connected to the surface of the nickel oxide film layer. The Cl-Ni bond combined on the surface of the nickel oxide film layer can improve the electrostatic potential energy of electrons on the surface of the nickel oxide film layer, so that the surface work function of the nickel oxide film is improved. When the nickel oxide thin film is applied to a quantum dot light emitting diode as a hole transport layer, the nickel oxide thin film with a relatively high surface work function can reduce a hole injection barrier between the nickel oxide thin film and the quantum dot light emitting layer, so that the light emitting efficiency of a QLED is improved; the Cl-Ni polar bond can also reduce the roughness of the surface of the nickel oxide thin film, so that deposition of the quantum dot light emitting layer is facilitated, interface defects between the hole transport layer and the quantum dot light emitting layer can be reduced, carrier transport traps and a non-radiative recombination center are reduced, and the light-emitting efficiency of the QLED is improved.
Owner:TCL CORPORATION
Anode structure and fabrication process of top emitting oled device
ActiveCN103219472BNot easy to spreadImprove adhesionSolid-state devicesSemiconductor/solid-state device manufacturingThin membraneEngineering
The invention relates to the technical field of organic light-emitting diode manufacturing, in particular to preparation of a top-emitting organic light-emitting diode (OLED) device anode structure. The top-emitting OLED device anode structure is characterized in that four layers of thin films cover a substrate, a base compatible layer, a middle reflectivity layer, a energy level matching layer and an anode modifying layer are respectively arranged on the substrate from bottom to top, multifunctionality of an anode is achieved through adoption of the design of a multi-layer thin film structure, light-emitting efficiency of a top-emitting OLED device is obviously improved, and the service life of the top-emitting OLED device is obviously prolonged. Furthermore, due to the fact that the anode is prepared by materials which are not prone to occurrence of element diffusion, probability of occurrence of shot circuit of device pixels due to the element diffusion is reduced. Due to adoption of metallic simple substance or alloy or metallic compound, raw materials can be easily obtained and are low in price, and thin film preparation methods are various.
Owner:YUNNAN NORTH OLIGHTEK OPTO ELECTRONICS TECH
Compound of general formula and application thereof
PendingCN110218175AImprove solubilityIncreasing the thicknessOrganic chemistrySolid-state devicesOrganic electroluminescenceSingle bond
The invention discloses a general formula compound with the following structure, wherein R1 is selected from C6-C30 aryl or fused ring aryl, C3-C30 heterocyclic aryl or fused ring heteroaryl; R2 and R3 are independently selected from hydrogen, C1-C12 alkyl, C1-C8 alkoxy, C6-C30 aryl or fused ring aryl, C3-C30 heterocyclic aryl or fused ring heteroaryl; M and n are each independently selected fromintegers of 1 to 4; L is selected from single bonds, or C1-C12 alkyl, C1-C8 alkoxy, C5-C30 arylene, C3-C30 heterocyclic arylene; Ar1 and Ar2 are independently selected from C6-C30 aryl or fused ring aryl respectively; Ar3 and Ar4 are independently selected from C6-C30 aryl or fused ring aryl, C3-C30 heterocyclic aryl or fused ring heteroaryl respectively. The invention also protects the organic electroluminescent device adopting the general formula compound. When the compound is used as a hole transport material in an OLED light emitting layer, the compound exhibits excellent device performance and stability.
Owner:BEIJING ETERNAL MATERIAL TECH +1
A method for preparing p-i-n structure low-voltage driving organic light-emitting diodes by solution method
ActiveCN109585698BReduce the driving voltageImprove transmission performanceSolid-state devicesSemiconductor/solid-state device manufacturingElectron holeElectron injection
A kind of solution method prepares the method for the low voltage driving organic light-emitting diode (OLED) of p-i-n structure, and this OLED device is made of transparent ITO glass substrate, p-type doped transmission layer, light-emitting layer, n-type doped transmission Layer, electron buffer layer and metal back electrode stacked composition. The invention introduces the composite material PTAA:AgNWs into the OLED device, which can effectively improve the transport performance of the hole transport layer and reduce the hole injection barrier, thereby reducing the driving voltage of the device; PEI:SnS is prepared by a solution method 2 ‑QDs serve as the electron transport layer of OLED devices, which further improves the electron injection and transport capabilities in the device. Finally, while reducing the device driving voltage, the luminous efficiency of the OLED device is effectively improved.
Owner:BINHAI IND RES INST OF TIANJIN UNIV CO LTD
Organic electroluminescence device and organic electroluminescence device
ActiveCN108963093BReduce the lighting voltageImprove efficiencySolid-state devicesSemiconductor/solid-state device manufacturingCharge carrier mobilityOrganic electroluminescence
Owner:YUNGU GUAN TECH CO LTD
Organic electroluminescent display device
InactiveCN101587941BIncrease luminous fluxLower hole injection barrierSolid-state devicesSemiconductor/solid-state device manufacturingOrganic layerLuminous flux
Owner:IRICO
Quantum dot light-emitting diode and preparation method thereof
ActiveCN111384256BIncrease the number ofImprove injection efficiencySolid-state devicesSemiconductor/solid-state device manufacturingPoint lightParticle physics
Owner:TCL CORPORATION
Modification method of hole transport material, light-emitting device and preparation method of light-emitting device
PendingCN113968960AImprove injection efficiencyImprove compound efficiencySolid-state devicesSemiconductor/solid-state device manufacturingValence bandElectron hole
The invention belongs to the technical field of display devices, and particularly relates to a modification method of a hole transport material. The method comprises the following steps: obtaining a polymer hole transport material; and modifying the polymer hole transport material with an acidic compound to obtain the modified hole transport material. According to the modification method of the hole transport material, the polymer hole transport material is modified by adopting the acidic compound, so that the work function of the polymer hole transport material is improved, the hole injection barrier in the hole transport layer is reduced, and the energy level difference of a valence band between the hole transport layer and the quantum dot light-emitting layer is reduced; therefore, the injection efficiency of holes in the quantum dot light-emitting layer is improved, the recombination efficiency of electrons and holes in the quantum dot light-emitting layer is improved, the light-emitting efficiency and stability of the light-emitting device are improved, and the service life is prolonged.
Owner:TCL CORPORATION
Transparent organic electroluminescent device and preparation method thereof
InactiveCN104518133AImprove visual effectsImprove transmittanceSolid-state devicesSemiconductor/solid-state device manufacturingLithiumHole injection layer
The invention discloses a transparent organic electroluminescent device. The transparent organic electroluminescent device comprises a glass substrate, an anode, a cavity implantation layer, a green luminescent layer, an electron injecting layer and a cathode. The anode comprises a first anode layer and a secodn anode layer which are sucessivley laminated on the surface of the glass substrate; the material of the first anode layer comes from at least one of (3-mercaptopropyl)trimethoxysilane, (3-mercaptoethyl)trimethoxysilane, (3-mercaptomethyl) trimethoxysilane and O,O,O-trimethyl-mercaptosilane; the material of the second anode layer comes from at least one of a magnesium-silver alloy, a lithium-aluminum alloy, barium and calcium; and the material of the cathode is indium tin oxide. According to the invention, through arranging an anode layer with a double-layer structure, the light emitting efficiency of an anode surface reaches more than 60% of the light emitting efficiency of a cathode surface, and the visual effect of the transparent organic electroluminescent device in actual application is improved. The invention further discloses a preparation method of a transparent organic electroluminescent device.
Owner:OCEANS KING LIGHTING SCI&TECH CO LTD +2
Quantum dot light-emitting diode and its preparation method
ActiveCN111384258BLower hole injection barrierImprove hole injection efficiencySolid-state devicesSemiconductor/solid-state device manufacturingElectron holeChemical physics
The invention belongs to the field of display technology, and in particular relates to a quantum dot light-emitting diode and a preparation method thereof. A quantum dot light-emitting diode, comprising an anode, a cathode, and a quantum dot light-emitting layer between the anode and the cathode, a material layer composed of organic molecules is arranged between the anode and the quantum dot light-emitting layer, the The above organic molecules contain electron-withdrawing groups. The material layer composed of organic molecules containing electron-withdrawing groups can reduce the hole injection barrier from the anode to the quantum dot material, thereby improving the hole injection efficiency of the device, making the injection of holes and electrons more balanced, and ultimately improving the performance of the device. performance.
Owner:TCL CORPORATION
A tandem white organic light emitting device
ActiveCN105304828BReduce in quantityReduce voltageSolid-state devicesSemiconductor/solid-state device manufacturingOrganic light emitting deviceConcentration gradient
The invention relates to a white organic light-emitting device in series, which includes a substrate, and a first electrode layer, a plurality of blue fluorescent light-emitting units, a plurality of charge generation layers, a plurality of phosphorescent light-emitting units and a second electrode layer are stacked, and the adjacent blue fluorescent light-emitting units An n-type charge generation layer made of an n-type material is arranged between the phosphorescent light-emitting unit; the phosphorescent light-emitting unit includes a first hole transport layer, a phosphorescent light-emitting layer and a first electron transport layer; the first hole The transport layer includes a first hole material layer, a transition layer and a second hole material layer; the first hole material layer is in contact with the n-type charge generation layer; the first hole material layer and the n-type The charge generation layers collectively constitute the charge generation layer. Since the material of the first hole transport layer is evaporated by a linear evaporation source to form a continuous concentration gradient structure, the number of evaporation sources in the evaporation chamber is reduced, and the hole injection barrier is greatly reduced, thereby significantly reducing the voltage of the device and improving efficiency.
Owner:GUAN YEOLIGHT TECH CO LTD
Organic electroluminescent device and organic electroluminescent apparatus
PendingCN111430556AReduce the lighting voltageLower the barrierSolid-state devicesSemiconductor/solid-state device manufacturingOrganic electroluminescenceMaterials science
The invention relates to the technical field of display, and discloses an organic light-emitting device and an organic electroluminescent apparatus. The organic electroluminescent device comprises a first electrode layer, a first carrier function layer, a light-emitting layer and a second electrode layer which are stacked in sequence, a P-doped layer is further arranged between the first carrier function layer and the light-emitting layer, and the P-doped layer is in direct contact with the light-emitting layer. Therefore, the energy level bending of the interface between the first carrier function layer and the light-emitting layer can be changed, the hole injection barrier at the interface between the first carrier function layer and the light-emitting layer is reduced, and the turn-on voltage of the organic electroluminescent device is effectively reduced. Specifically, when the organic electroluminescent device is applied, the turn-on voltage difference between the adjacent organicelectroluminescent devices can be reduced, so that the other organic electroluminescent devices cannot be lightened even if the generated carriers are migrated to the organic electroluminescent devices with other light-emitting colors through a common carrier functional layer, and the problem of color cast is solved.
Owner:YUNGU GUAN TECH CO LTD
Light-emitting field-effect transistor with dielectric layer/quantum dot/dielectric layer structure and preparation method thereof
ActiveCN111146351BReduce pinholesImprove injection efficiencySolid-state devicesSemiconductor/solid-state device manufacturingQuantum dotElectron transport layer
The invention discloses a light-emitting field effect transistor with a dielectric layer / quantum dot / dielectric layer structure and a preparation method thereof. A grid, an insulating layer, an electron transport layer, a first dielectric layer, Quantum dot light-emitting layer, second dielectric layer, hole transport layer, source / drain, the first dielectric layer modifies the interface between the electron transport layer and the quantum dot light-emitting layer, and the second dielectric layer modifies the interface between the quantum dot light-emitting layer and the hole Cave transport layer interface. Modifying the interface between the quantum dot light-emitting layer and the hole transport layer through a dielectric layer not only reduces the hole injection barrier between the hole transport layer and the light-emitting layer, but also reduces the pinholes in the light-emitting layer, improves the hole injection efficiency, and reduces the Non-radiative recombination significantly improves the luminous efficiency of light-emitting field-effect transistors. The invention also uses a dielectric layer to modify the interface between the electron transport layer and the quantum dot light-emitting layer, which can reduce the trap density inside the electron transport layer and inhibit non-radiative recombination, thereby further improving the luminous efficiency of the device.
Owner:SHANGHAI UNIV
Organic electroluminescence device and preparation method thereof
InactiveCN104659238AImprove conductivitySolution to short lifeSolid-state devicesSemiconductor/solid-state device manufacturingMetallic materialsElectron transfer
The invention discloses an organic electroluminescence device which comprises a glass substrate, a scattering layer, an anode, a hole injection layer, a hole transmission layer, a light emitting layer, an electron transfer layer, an electron injection layer and a cathode which are overlapped in sequence, wherein the scattering layer comprises a metal material, a hole transfer material and a light emitting material; the power function of the metal material is minus 2.0-minus 3.5eV; the hole transfer material is selected from at least one of 1,1-di[4-[N,N'-di(p-cresyl)amino]phenyl]cyclohexane, 4,4',4''-tri(carbazole-9-yl)triphenylamine and N,N'-(1-naphthyl)-N,N'-diphenyl-4,4'-benzidine. The organic electroluminescence device disclosed by the invention is relatively high in light emission efficiency. The invention further provides a preparation method of the organic electroluminescence device.
Owner:OCEANS KING LIGHTING SCI&TECH CO LTD +2
Organic light-emitting device and production method thereof
InactiveCN103972407ALower the barrierImprove hole injection efficiencySolid-state devicesSemiconductor/solid-state device manufacturingOrganic electroluminescenceMetal
The invention provides an organic light-emitting device. The organic light-emitting device comprises an anode, a hole injection layer, a first hole transport layer, a first light-emitting layer, a first electron transport layer, a charge generation layer, a second hole transport layer, a second light-emitting layer, a second electron transport layer, an electron injection layer and a cathode which are laminated sequentially. The charge generation layer comprises a metal oxide layer laminated on the surface of the first electron transport layer and a ternary doped layer formed on the surface of the metal oxide layer, the metal oxide layer is made of materials selected from at least one of molybdenum trioxide, tungsten trioxide and vanadium pentoxide, the ternary doped layer is made of materials including phthalocyanine compounds, metal and hole transport materials, a mass ratio between the metal and the phthalocyanine compounds in the ternary doped layer is 1:50-1:5, and a mass ration between the hole transport materials and the phthalocyanine compounds in the ternary doped layer is 1:1000-1:10. The organic light-emitting device is high in light emitting efficiency. The invention further provides a production method of the organic light-emitting device.
Owner:OCEANS KING LIGHTING SCI&TECH CO LTD +2
Low roll-off quasi-two-dimensional perovskite light-emitting diode and its preparation method
ActiveCN111192971BSolve the problem of serious efficiency roll-offImprove luminous efficiencySolid-state devicesSemiconductor/solid-state device manufacturingElectron holeLight-emitting diode
Owner:SHANGHAI UNIV
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