Light-emitting field-effect transistor with dielectric layer/quantum dot/dielectric layer structure and preparation method thereof

Abstract

The invention discloses a light-emitting field effect transistor with a dielectric layer / quantum dot / dielectric layer structure and a preparation method thereof. A grid, an insulating layer, an electron transport layer, a first dielectric layer, Quantum dot light-emitting layer, second dielectric layer, hole transport layer, source / drain, the first dielectric layer modifies the interface between the electron transport layer and the quantum dot light-emitting layer, and the second dielectric layer modifies the interface between the quantum dot light-emitting layer and the hole Cave transport layer interface. Modifying the interface between the quantum dot light-emitting layer and the hole transport layer through a dielectric layer not only reduces the hole injection barrier between the hole transport layer and the light-emitting layer, but also reduces the pinholes in the light-emitting layer, improves the hole injection efficiency, and reduces the Non-radiative recombination significantly improves the luminous efficiency of light-emitting field-effect transistors. The invention also uses a dielectric layer to modify the interface between the electron transport layer and the quantum dot light-emitting layer, which can reduce the trap density inside the electron transport layer and inhibit non-radiative recombination, thereby further improving the luminous efficiency of the device.

Description

technical field [0001] The invention relates to a light-emitting field-effect transistor and a preparation method thereof, in particular to a quantum dot light-emitting transistor and a preparation method thereof, which are applied in the technical field of semiconductor material preparation technology. Background technique [0002] Light-emitting field-effect transistors are considered to be new display devices with great development prospects because of their special photoelectric properties, both the switching capability of field-effect transistors and the electroluminescence characteristics of light-emitting diodes. Compared with traditional optoelectronic devices, light-emitting field-effect transistors are a relatively new device structure, which has important scientific research value in studying the transport characteristics of carriers and the luminescence of excitons. At the same time, because the light-emitting transistor has the characteristics of high current de...

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Problems solved by technology

[0003] However, in a typical multilayer heterojunction light emitting field effect transistor, the carrier injection electrodes (source and drain) are deposited on top of the carrier transport layer, because there is an Large potential barrier or poor interface contact, carriers cannot be injected into the light-emitting layer through the charge transport layer and can only stay in the top charge transport layer for transport, thereby reducing the light-emitting performance of the device

The commonly used hole transport layer material PEDOT:PSS is a water-soluble hole transport material, and direct spin coating on the quantum dots will destroy the quantum dot film. At the same time, there are large holes between the PEDOT:PSS and the quantum dot light-emitting layer. Injection barrier, which is not conducive to hole injection into the quantum dot light-emitting layer

In addition, the commonly used electron transport layer material ZnO has a high surface-to-volume ratio and a large number of surface defect states caused by oxygen vacancies, which will cause non-radiative recombination, thereby deteriorating the luminous efficiency of the device.

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