Light-emitting field-effect transistor with dielectric layer/quantum dot/dielectric layer structure and preparation method thereof

A field-effect transistor and quantum dot light-emitting technology, which is applied in the fields of electric solid-state devices, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems of unfavorable hole injection into the quantum dot light-emitting layer, reducing the light-emitting performance of the device, and deteriorating the light-emitting efficiency of the device. , to achieve the effect of reducing trap density, improving injection efficiency and low cost

Active Publication Date: 2022-01-07
SHANGHAI UNIV
View PDF7 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] However, in a typical multilayer heterojunction light emitting field effect transistor, the carrier injection electrodes (source and drain) are deposited on top of the carrier transport layer, because there is an Large potential barrier or poor interface contact, carriers cannot be injected into the light-emitting layer through the charge transport layer and can only stay in the top charge transport layer for transport, thereby reducing the light-emitting performance of the device
The commonly used hole transport layer material PEDOT:PSS is a water-soluble hole transp

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Light-emitting field-effect transistor with dielectric layer/quantum dot/dielectric layer structure and preparation method thereof
  • Light-emitting field-effect transistor with dielectric layer/quantum dot/dielectric layer structure and preparation method thereof
  • Light-emitting field-effect transistor with dielectric layer/quantum dot/dielectric layer structure and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035] In this example, see figure 1 , a light-emitting field-effect transistor with a dielectric layer / quantum dot / dielectric layer structure, in which a gate 1, an insulating layer 2, an electron transport layer 3, a first dielectric layer 4, and a quantum dot light-emitting layer are sequentially arranged from bottom to top layer 5, second dielectric layer 6, hole transport layer 7, source / drain 8;

[0036] The thickness of the gate 1 is 150nm, and the gate 1 is made of ITO conductive glass;

[0037] The insulating layer 2 has a thickness of 150nm, and the insulating layer 2 is made of aluminum oxide (Al 2 o 3 )film;

[0038] The electron transport layer 3 has a thickness of 70nm, and the electron transport layer 3 is made of zinc oxide nanoparticles into a zinc oxide film;

[0039] The thickness of the first dielectric layer 4 is 3 nm, and the first dielectric layer 4 adopts a methyl ammonium bromide (MABr) film;

[0040] The quantum dot luminescent layer 5 has a thic...

Embodiment 2

[0065] This embodiment is basically the same as Embodiment 1, especially in that:

[0066] In this example, see figure 1 , a light-emitting field-effect transistor with a dielectric layer / quantum dot / dielectric layer structure, in which a gate 1, an insulating layer 2, an electron transport layer 3, a first dielectric layer 4, and a quantum dot light-emitting layer are sequentially arranged from bottom to top layer 5, second dielectric layer 6, hole transport layer 7, source / drain 8;

[0067] The thickness of the gate 1 is 100nm, and the gate 1 is made of ITO conductive glass;

[0068] The insulating layer 2 has a thickness of 140nm, and the insulating layer 2 is made of aluminum oxide (Al 2 o 3 )film;

[0069] The electron transport layer 3 has a thickness of 60nm, and the electron transport layer 3 is made of zinc oxide nanoparticles into a zinc oxide film;

[0070] The thickness of the first dielectric layer 4 is 1 nm, and the first dielectric layer 4 adopts a methyl a...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to view more

Abstract

The invention discloses a light-emitting field effect transistor with a dielectric layer/quantum dot/dielectric layer structure and a preparation method thereof. A grid, an insulating layer, an electron transport layer, a first dielectric layer, Quantum dot light-emitting layer, second dielectric layer, hole transport layer, source/drain, the first dielectric layer modifies the interface between the electron transport layer and the quantum dot light-emitting layer, and the second dielectric layer modifies the interface between the quantum dot light-emitting layer and the hole Cave transport layer interface. Modifying the interface between the quantum dot light-emitting layer and the hole transport layer through a dielectric layer not only reduces the hole injection barrier between the hole transport layer and the light-emitting layer, but also reduces the pinholes in the light-emitting layer, improves the hole injection efficiency, and reduces the Non-radiative recombination significantly improves the luminous efficiency of light-emitting field-effect transistors. The invention also uses a dielectric layer to modify the interface between the electron transport layer and the quantum dot light-emitting layer, which can reduce the trap density inside the electron transport layer and inhibit non-radiative recombination, thereby further improving the luminous efficiency of the device.

Description

technical field [0001] The invention relates to a light-emitting field-effect transistor and a preparation method thereof, in particular to a quantum dot light-emitting transistor and a preparation method thereof, which are applied in the technical field of semiconductor material preparation technology. Background technique [0002] Light-emitting field-effect transistors are considered to be new display devices with great development prospects because of their special photoelectric properties, both the switching capability of field-effect transistors and the electroluminescence characteristics of light-emitting diodes. Compared with traditional optoelectronic devices, light-emitting field-effect transistors are a relatively new device structure, which has important scientific research value in studying the transport characteristics of carriers and the luminescence of excitons. At the same time, because the light-emitting transistor has the characteristics of high current de...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L51/50H01L51/52H01L51/56
CPCH10K50/115H10K50/16H10K50/15H10K50/30H10K71/00
Inventor 杨绪勇孔令媚丁星伟吴家龙
Owner SHANGHAI UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap