Flexible charge trap storage based on oxidized graphene

Abstract

The invention belongs to the technical field of semiconductor devices and particularly relates to a flexible charge trap storage based on oxidized graphene and a preparation method thereof. According to the flexible charge trap storage and the preparation method, the storage relies on the three-layer structure of an existing charge trap storage, namely, the tunneling layer/charge trap layer/control gate dielectric layer structure, a flexible substrate is utilized as a substrate, and the oxidized graphene is adopted to replace the traditional charge trap layer. The method comprises the specific preparation steps of using a low-temperature atomic layer deposition method, firstly, depositing the dielectric tunneling layer on the flexible substrate, coating the flexible substrate with the oxidized graphene in a rotating mode under the indoor temperature situation, and then, similarly adopting the low-temperature atomic layer deposition technology to grow and control the gate dielectrics. The flexible charge trap storage and the preparation method have the advantages that the low-temperature atomic layer deposition technology and the process of coating the flexible substrate with the oxidized graphene at the indoor temperature in the rotating mode are used, the characteristics of the oxidized graphene is utilized, window erasing is ensured, meanwhile, the process thermal budget is greatly reduced, and practical and reliable schemes are provided for flexible electronic devices in future.

Description

technical field [0001] The invention belongs to the technical field of semiconductor devices, and in particular relates to a flexible charge trap memory. Background technique [0002] With the development of integrated circuits, people's demand for semiconductor devices is not limited to the increase in performance, but extends to more aspects. For example, flexible devices can be folded and curled. This feature makes it possible for applications in complex environments. [0003] One of the difficulties encountered in the development of flexible electronic devices is that flexible organic substrates cannot withstand high temperatures, so the necessary thermal budget in the device manufacturing process must be reduced. So the tunneling layer, the charge trapping layer, and the blocking layer must be grown at an appropriate lower temperature. Although the use of all organic materials can solve some of the problems, the performance of organic materials is not stable and is e...

AI Technical Summary

Problems solved by technology

Although all organic materials can solve some problems, the performance of organic materials is unstable and easily affected by the environment

The performance of the device is bound to be severely affected by the

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