Quantum dot light-emitting diode and preparation method thereof

A quantum dot light-emitting and diode technology, which is used in semiconductor/solid-state device manufacturing, electrical components, and electro-solid devices, etc., and can solve problems such as unbalanced carrier injection.

Active Publication Date: 2020-07-07
TCL CORPORATION
View PDF8 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to overcome the above-mentioned shortcomings of the prior art, provide a quantum dot light-

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Quantum dot light-emitting diode and preparation method thereof
  • Quantum dot light-emitting diode and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0029] On the other hand, the embodiment of the present invention also provides a method for preparing a quantum dot light-emitting diode, such as figure 2 shown, including the following steps:

[0030] S01: Provide a base;

[0031] S02: Prepare a material layer composed of organic molecules on the substrate; wherein, the organic molecules contain electron-withdrawing groups.

[0032]The preparation method of the quantum dot light-emitting diode provided by the embodiment of the present invention is simple in process and low in cost, and the device can be obtained by directly preparing a material layer composed of unique organic molecules on the substrate; the material in the final device obtained by the preparation method The layer is between the anode and the quantum dot light-emitting layer, and is a material layer made of organic molecules containing electron-withdrawing groups. Such organic molecules can increase the surface work function of the anode material and reduc...

Embodiment 1

[0044] A QLED light-emitting device, its structural schematic diagram is as follows figure 1 As shown, from bottom to top, it includes a substrate, an anode disposed on the substrate, a hole injection layer disposed on the anode, a hole transport layer disposed on the hole injection layer, and a hole transport layer disposed on the hole transport layer. A material layer composed of 4-nitrothiophenol, a quantum dot light-emitting layer disposed on the material layer, an electron transport layer disposed on the quantum dot light-emitting layer, a cathode disposed on the electron transport layer, disposed between the anode and the cathode encapsulation layer.

[0045] in,

[0046] In this embodiment, the substrate is a glass substrate;

[0047] In this embodiment, the anode is made of ITO with a thickness of 150 nm. To take out the ITO, first use a nitrogen gun to clear the large particles of dust on the surface, then use detergent, ultrapure water, and isopropanol to ultrason...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to view more

Abstract

The invention belongs to the technical field of display, and particularly relates to a quantum dot light emitting diode and a preparation method thereof. A quantum dot light-emitting diode comprises an anode, a cathode and a quantum dot light-emitting layer located between the anode and the cathode; a material layer composed of organic molecules is arranged between the anode and the quantum dot light-emitting layer, and the organic molecules contain electron withdrawing groups. The material layer composed of the electron withdrawing group-containing organic molecules can reduce the hole injection barrier from the anode to the quantum dot material, thereby improving the hole injection efficiency of the device, enabling the injection of holes and electrons to be more balanced, and finally improving the performance of the device.

Description

technical field [0001] The invention belongs to the field of display technology, and in particular relates to a quantum dot light-emitting diode and a preparation method thereof. Background technique [0002] Display technology has evolved from the early cathode ray tube (Cathode Ray Tube, CRT) to the liquid crystal display (Liquid Crystal Display, LCD) in the mid-1980s, the plasma display panel (PDP), and then to the current mainstream organic Light-emitting diodes (Organic Light Emitting Diode, OLED) and quantum dot light-emitting diodes (Quantum Dot Light Emitting Diode, QLED), display technology has completed a qualitative leap again and again. [0003] Quantum dot light-emitting diodes have great development potential in the field of display and lighting due to their advantages such as narrow half-peak width, high brightness, continuously adjustable luminescent color with the size of quantum dots, and solution method preparation. The display panel based on QLED covers ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L51/50H01L51/56
CPCH10K50/115H10K50/17H10K71/00H10K50/00
Inventor 眭俊谢相伟黄航苏亮田亚蒙
Owner TCL CORPORATION
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap