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62results about How to "Balance injection" patented technology

Triphenyl phosphorus oxide-based thermal excitation delayed fluorescent blue light guest material and its preparation method and use

The invention relates to a fluorescent blue light guest material and its preparation method and use and especially relates to a triphenyl phosphorus oxide-based thermal excitation delayed fluorescent blue light guest material and its preparation method and use. The triphenyl phosphorus oxide-based thermal excitation delayed fluorescent blue light guest material solves the problem that because of large difference of an electron donor and an acceptor, when the electron donor is increased, guest emission wavelength produces red shift so that stable and efficient blue guest luminescence cannot be realized. The blue light guest material has a structural formula shown in the description. The preparation method comprises 1, preparing PXZPhBr, PXZPhBr, PTZPhBr and DMACPhBr, 2, mixing the products obtained through the step 1 and tetrahydrofuran, adding n-butyllithium and diphenylphosphinous chloride into the mixture, adding hydrogen peroxide into the mixture, carrying out stirring and carrying out chromatography and recrystallization. The triphenyl phosphorus oxide-based thermal excitation delayed fluorescent blue light guest material is used for preparation of a thermal excitation delayed fluorescent electroluminescent device. The material utilizes short-axis modification strategy, effectively keeps a matrix triplet state energy level, has a donor-acceptor (D-A)-type molecular structure and balances carrier injection and transmission. The preparation method belongs to the field of fluorescent material preparation.
Owner:HEILONGJIANG UNIV

Controllable asymmetric doping potential barrier nano silicon based luminous device and method for producing the same

The invention relates to an nc-Si based luminescent device based on a controllable asymmetric quantum well structure doping with voltage barrier and a preparation method thereof, which belongs to the technical field of nano-electronics and nano-photoelectronic device material. The luminescent device is deposited with an amorphous carborundum thin film doping with boron as a cavity barrier layer on a semiconductor substrate; the cavity barrier layer is deposited with an nc-Si film which is generated by the anneal of an amorphous silicon film and is used as a luminescent active layer; the luminescent active layer is deposited with an amorphous silicon dioxide thin film doping with phosphor which is used as an electronic barrier layer; the electronic barrier layer is deposited with a conductive film which is left with an optical window and used as the cathode of the luminescent device, while the back side of the semiconductor substrate is deposited with a conductive film which is used as the anode of the luminescent device. The technical process of the invention relates to that a multi-layer film with the quantum well structure is prepared; then annealing and crystallization are processed and the electrodes of the device are prepared. The luminescent device has the advantages of high efficient and balanced current carrier injection structure and the Si / SiO2 luminescent system, which provides the possibility of the realization of a high efficient Si-based luminescent device.
Owner:NANJING UNIV

Triphenylamine substituted-vinyl modified phenanthroimidazole compound, preparation method thereof and application of compound as electroluminescent device

ActiveCN109705041AEfficient launchEnhance aggregation-induced luminescence effectOrganic chemistrySolid-state devicesQuantum yieldGreen-light
The invention discloses a triphenylamine substituted-vinyl modified phenanthroimidazole compound, a preparation method thereof and an application of the compound as an electroluminescent device. The structural general formula of the compound is shown in a formula (I), wherein R is hydrogen or phenyl. According to the invention, excellent characteristics of phenanthroimidazole materials and triphenylamine substituted-vinyl are adopted, meanwhile, a donor and a receptor are connected through the vinyl, and the pi electron ionization region can be effectively improved, so that carrier injection and transmission are more balanced, then fluorescence quantum efficiency is improved, and high-fluorescence quantum efficiency of a solid-state thin film under an aggregation state is achieved; and meanwhile, blue-green light can be efficiently emitted in an organic solvent, and organic luminescent small molecules with good carrier transmission capability and high fluorescence quantum yield under aaggregation state are synthesized. The compound provided by the invention can be used as a luminescent material to be widely applied to organic luminescent devices, in particular to the stable and efficient organic electroluminescent devices.
Owner:GUANGDONG UNIV OF TECH

Device for improving luminous efficiency of silicon nitride-based thin-film light-emitting diode and preparation method of device

InactiveCN103474541AInhibit excessive injectionBalance injectionSemiconductor devicesSilicon thin filmControllability
The invention discloses a device for improving the luminous efficiency of a silicon nitride-based thin-film light-emitting diode and a preparation method of the device, and belongs to the technical field of semiconductor luminescent devices. The preparation method mainly comprises the following steps: a p-Si layer is used as a hole-injection layer, and an ultrathin noncrystalline silicon thin film is deposited on the hole-injection layer; a silicon nitride-based thin film is deposited on the ultrathin noncrystalline silicon thin film to serve as a light-emitting active layer; the ultrathin noncrystalline silicon thin film is placed in an annealing furnace to be subjected to dehydrogenation annealing and steady state high temperature annealing in sequence, so that the ultrathin noncrystalline silicon thin film is converted into a nanometer silicon thin film; then, an AZO transparent conducting thin film provided with an optical window is deposited on the silicon nitride-based light-emitting active layer. The device for improving the luminous efficiency of the silicon nitride-based thin-film light-emitting diode and the preparation method of the device mainly have the advantages that ultrathin nanometer silicon is used as a hole blocking layer in the device to effectively restrain hole carriers from being injected excessively, therefore, balanced injection of electrons and holes is promoted, and the luminous efficiency of the device is improved. The preparation process is simple, good in controllability, and compatible with a current microelectronic process.
Owner:HANSHAN NORMAL UNIV

Bipolar small molecular light-emitting material based on aromatic heterocyclo-2-S,S-dioxydibenzothiophene unit, and preparation method and application thereof

ActiveCN106867520ARich opticsRich in electricityOrganic chemistrySolid-state devicesElectricitySolubility
The invention discloses a bipolar small molecular light-emitting material based on an aromatic heterocyclo-2-S,S-dioxydibenzothiophene unit, and a preparation method and application thereof. The preparation method comprises the following step: performing Suzuki coupling reaction on an aromatic heterocyclo-2-S,S-dioxydibenzothiophene monomer and a borate monomer containing an Ar structure to obtain the bipolar small molecular light-emitting material based on an aromatic heterocyclo-2-S,S-dioxydibenzothiophene unit. The bipolar small molecular light-emitting material disclosed by the invention has solubility, film forming property and film morphology stability, also has favorable electron and hole transmission performance, and can balance carrier injection and transmission to realize effective compounding of more excitons; a light-emitting layer based on the material can avoid the phenomenon of mixing with a hole/electron transmission layer interface, thereby improving the light-emitting efficiency of a device; and the light-emitting layer based on the material dose not need to be subjected to annealing treatment during preparation of the electroluminescent device, thereby ensuring that the preparation process is simple.
Owner:东莞阿尔达新材料科技有限公司

Dibenzo-heterocyclic compound and preparation method and applications thereof

The invention discloses a dibenzo-heterocyclic compound, which has a structure represented by the formula (I). The LUMO energy level of the dibenzo-heterocyclic compound is low, the dibenzo-heterocyclic compound can be well matched with an electron transport material, and the electron injection and transportation are promoted. The dibenzo-heterocyclic compound has a good hole transport performance, is capable of balancing the ratio of electrons / holes in a luminous layer when being used as a luminous layer material, increases the compounding probability, and improves the luminous efficiency. Due to the spatial configuration of the dibenzo-heterocyclic compound, molecule stacking is avoided, the generation of high energy exciton generated by energy transmission between molecules is prevented, annihilation of exciton is inhibited, and the roll-off is inhibited. At the same time, the dibenzo-heterocyclic compound has good thermal stability and is capable of efficiently and stably emittingblue light. The invention also discloses an organic electroluminescent device, at least one functional layer of the device comprises the dibenzo-heterocyclic compound, and the blue light device has the advantages of high blue light luminous efficiency and low work voltage.
Owner:NINGBO LUMILAN NEW MATERIAL CO LTD +1

Fluorinated triphenylamine electro-material and application thereof

InactiveCN102875390AImprove thermal stabilityThe glass transition temperature range varies widelyAmino preparation from aminesSolid-state devicesFull width at half maximumAniline
The invention discloses a fluorinated triphenylamine electro-material and an application thereof; according to the material, through the change of the positions and the numbers of hole transporting moieties of strong electron-withdrawing groups of fluorine or trifluoromethyl at periphery of triphenylamine, the energy of the highest occupied molecular orbital, the energy of the lowest unoccupied molecular orbital, the charge transport capacity, photophysical properties and thermal properties of the material are adjusted; thus balance between the injection and transport of holes and electrons is reached; most holes and electrons of the injected device are combined in a luminescent layer; therefore, the device structure is greatly simplified, and the device performance is improved. Meanwhile, through the modification of fluorine or trifluoromethyl, the luminescence property for blue and violet light of the material quite approaches the blue light chromaticity coordinate (CIE=(0.14, 0.08)) of the International Commission of Illumination (NTSC) the material also has a narrow spectrum full width at half maximum (FWHM); devices prepared by the material can not only effectively reduce device energy consumption, but also adjust the illuminant color of the device through radiation or energy transfer between a subject and an object.
Owner:XI AN JIAOTONG UNIV

Nano material, preparation method thereof and quantum dot light-emitting diode

The invention discloses a nano material, a preparation method thereof and a quantum dot light emitting diode. The nano material has a core-shell structure, and the core of the nano material comprises ZnO nano particles and metal elements doped in the ZnO nano particles; and the shell of the nanometer material comprises a metal oxide. By doping other metal elements in the zinc oxide nanoparticles and wrapping a layer of metal oxide shell, the energy level structure and the electron transmission efficiency of the whole nano material can be adjusted, so that the energy levels of the quantum dots and the nano material in the device are more matched, and the quantum dots and the nano material are more uniform. Transfer of electrons in the quantum dot light-emitting layer to the electron transport layer is reduced, and the electron-hole recombination efficiency of the quantum dot light-emitting layer is improved; electron hole injection of the device is more balanced, charge accumulation of the quantum dot light-emitting layer is reduced, Auger recombination is inhibited, and the radiative recombination efficiency of electron holes is improved; therefore, the zinc oxide nanoparticles are more stable, and the overall stability of the device is improved.
Owner:TCL CORPORATION

Fluorenyl aromatic phosphine oxide photoelectric material and preparation method thereof

The invention relates to a photoelectric material and a preparation method thereof, particularly to a fluorenyl aromatic phosphine oxide photoelectric material and a preparation method thereof, and aims at solving the problem that carrier injection transmission is unbalanced caused by the fact that aromatic hydrocarbon or arylamine functional groups with large conjugated structures are introduced into a fluorine system. The method includes preparing 2-bromine-(9,9-bis-(diphenylphosphine oxide) ) fluorine; and mixing the 2-bromine-(9,9-bis-(diphenylphosphine oxide) ) fluorine, tetrakis (triphenylphosphine) palladium, tetrabutylammonium bromide and borate and dissolving in tetrahydrofuran, adding in NaOH solution, and obtaining the photoelectric material after reaction, extraction, drying and column chromatography; or mixing the 2-bromine-(9,9-bis-(diphenylphosphine oxide) ) fluorine, carbazole, potassium carbonate, copper iodide and 18-crown-6-ether, adding in a high-temperature solvent, and obtaining the photoelectric material after reaction, extraction, drying and column chromatography. The power efficiency of the photoelectric material prepared through the method can reach 2.19lm/W when the material is used for preparing blue-ray fluorescent devices.
Owner:HEILONGJIANG UNIV

Trianiline thiofluorene unit-based blue light conjugated polymer, and preparation method and application thereof

The invention discloses a trianiline thiofluorene unit-based blue light conjugated polymer, and a preparation method and application thereof. Thiofluorene has a large band gap, so that great reductionof the highest occupied molecular orbital energy level of a polymer is easily caused by introducing the thiofluorene into the polymer; therefore, the injection and transmission balance of holes in anelectroluminescent device are affected. In order to find a balance point in the two aspects of injection and transmission of electrons / holes, the trianiline thiofluorene unit is designed and prepared; the trianiline thiofluorene unit has good hole transmission performance, so that the problem caused by introducing a thiofluorene unit into the main chain of the polymer can be effectively solved. Moreover, a long alkyl chain exists on the trianiline thiofluorene unit, so that the trianiline thiofluorene unit has good solubility; the conjugated polymer which is prepared through a Suzuki polymerization reaction is suitable for performing solution processing and printing displaying. The trianiline thiofluorene unit-based blue light conjugated polymer disclosed by the invention can be used fora light-emitting layer of an organic light emitting diode.
Owner:SOUTH CHINA UNIV OF TECH

Bipolar fluorescent material based on benzo five-membered heterocycle, preparation method of bipolar fluorescent material and organic electroluminescent device

PendingCN113861172AImproved unipolar characteristicsBalanced charge injectionSolid-state devicesSemiconductor/solid-state device manufacturingOrganic electroluminescenceFluorescent materials
The invention discloses a bipolar fluorescent material based on benzo five-membered heterocycle, a preparation method thereof and an organic electroluminescent device, the bipolar fluorescent material has the following structure: or in the structure, X and Y are independently selected from oxygen, sulfur, selenium, tellurium or nitrogen alkyl; R1-R4 are independently selected from hydrogen, deuterium or an alkyl chain; EG1-EG4 is an electrical group, and at least two of the EG1-EG4 are respectively selected from a fluorophore and an auxiliary group with polarity balanced with that of the fluorophore and are independently selected from hydrogen, deuterium or an alkyl chain. By introducing the auxiliary polar group, the unipolar characteristic of the material can be effectively improved, and charge injection is balanced. In addition, on the premise that the structure of a light-emitting area is not affected basically, the material structure is twisted, the material stacking effect is weakened, the aggregation quenching effect of a phosphor is reduced, the device stability and the adaptive doping concentration are improved, and regulation and control and yield improvement in the large-scale production process are facilitated.
Owner:PEKING UNIV SHENZHEN GRADUATE SCHOOL
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