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A thin film and dispersion technology, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of unsuitable QLED device film formation, complex preparation methods, and harsh environmental requirements, and achieve balanced injection. The method is simple, reliable, and safe. sex high effect
Active Publication Date: 2018-11-13
TCL CORPORATION
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[0004] The object of the present invention is to provide a kind of MX n The preparation method of thin film and its application, aim at solving existing MX n The preparation method is complex, demanding on the environment, poor in safety, and not suitable for the preparation of films in the field of QLED devices
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[0022] The embodiment of the present invention provides a MX n The film preparation method includes the following steps:
[0023] S01. Provide MX m Powder, the MX m The powder is dispersed in the solvent to obtain MX m Dispersions;
[0024] S02. In the MX m Add (NH 4 ) 2 X, stirring or ultrasonic processing until a clear mixed solution is obtained;
[0025] S03. Heat and stir the mixed solution to obtain a polysulfide precursor solution, and then deposit the film layer by solution processing;
[0026] S04. After the film is annealed at 80-120°C, it is heated at 250-300°C in a reducing or inert atmosphere to obtain MX n film,
[0027] Where the MX m , (NH 4 ) 2 X, in, X is at least one of S and Se; the MX m , MX n Where M is one of Mo, W, V, Nb, Ta, the MX m Among them, the value range of m is 2≤m≤3; the MX n Among them, the value range of n is 2≤n﹤3, and n≤m.
[0028] Specifically, in the above step S01, the MX m The powder is a metal sulfide powder, that is, M is one of Mo, W, V, Nb, an...
Embodiment 1
[0058] A preparation method of polysulfide precursor solution includes the following steps:
[0059] 10mmol MoS 3 Dissolve in 10ml water, add 10mmol(NH 4 ) 2 S, after stirring until it is completely dissolved, heat and stir at 60°C for 1 h, and mark its solution as M1.
Embodiment 2
[0061] A preparation method of polysulfide precursor solution includes the following steps:
[0062] 10mmol WS 3 Dissolve in 10ml water, add 10mmol(NH 4 ) 2 S, after stirring until it is completely dissolved, heat and stir at 60°C for 1 h, and mark its solution as W1.
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Abstract
The invention provides a preparation method of an MXn film. The method includes the following steps that: MXm powder is provided, the MXm powder is dispersed in a solvent, so that a MXm dispersion canbe obtained; (NH4)2X is added to the MXm dispersion, and an obtained mixture is stirred or subjected to ultrasonic treatment until a clear mixed solution is obtained; the mixed solution is heated andstirred, so that a polysulfide precursor solution can be obtained, and a film layer is deposited by means of a solution treatment method; and after the film layer is annealed at 80 to 120 DEG C, thefilm layer is subjected to heating treatment in a reducing or inert atmosphere at 250 to 300 DEG C, so that the MXn film can be obtained. According to the method of the invention, X in the MXm, (NH4)2X, and MX n is at least one material selected from S and Se; and M in the MXm and MXn is a material selected from Mo, W, V, Nb and Ta; the value of m in the MXm is larger than or equal to 2 and is smaller than or equal to 3; and the value of n in the MXn is larger than or equal to 2 and is smaller than 3; and n is smaller than or equal to m.
Description
Technical field [0001] The invention belongs to the technical field of flat panel displays, and in particular relates to an MX n Film preparation method and its application. Background technique [0002] Quantum dot light-emitting diodes (QLEDs) have the advantages of narrow FWHM (FWHM), adjustable colors, and can be prepared by solution methods, making them a strong competitor of next-generation display technology. In order to better promote the application of QLED devices, researchers have carried out research on QLED devices from different perspectives. Some scholars have studied quantum dots (QDs) and their light-emitting layers, hole transport layers (HTL), electron transport layers (ETL) and electrodes starting from the layer structure and materials of QLED devices; some scholars have combined the structure of QLED devices , Performance and stability are studied. In these studies, the stability of QLED devices has become the focus of commercial concern. At present, in QL...
Claims
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