Unlock instant, AI-driven research and patent intelligence for your innovation.
Preparation method of MXn film and application
What is Al technical title?
Al technical title is built by PatSnap Al team. It summarizes the technical point description of the patent document.
A thin film and dispersion technology, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of unsuitable QLED device film formation, complex preparation methods, and harsh environmental requirements, and achieve balanced injection. The method is simple, reliable, and safe. sex high effect
Active Publication Date: 2018-11-13
TCL CORPORATION
View PDF4 Cites 2 Cited by
Summary
Abstract
Description
Claims
Application Information
AI Technical Summary
This helps you quickly interpret patents by identifying the three key elements:
Problems solved by technology
Method used
Benefits of technology
Problems solved by technology
[0004] The object of the present invention is to provide a kind of MX n The preparation method of thin film and its application, aim at solving existing MX n The preparation method is complex, demanding on the environment, poor in safety, and not suitable for the preparation of films in the field of QLED devices
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more
Image
Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
Click on the blue label to locate the original text in one second.
Reading with bidirectional positioning of images and text.
Smart Image
Examples
Experimental program
Comparison scheme
Effect test
preparation example Construction
[0022] The embodiment of the present invention provides a MX n The film preparation method includes the following steps:
[0023] S01. Provide MX m Powder, the MX m The powder is dispersed in the solvent to obtain MX m Dispersions;
[0024] S02. In the MX m Add (NH 4 ) 2 X, stirring or ultrasonic processing until a clear mixed solution is obtained;
[0025] S03. Heat and stir the mixed solution to obtain a polysulfide precursor solution, and then deposit the film layer by solution processing;
[0026] S04. After the film is annealed at 80-120°C, it is heated at 250-300°C in a reducing or inertatmosphere to obtain MX n film,
[0027] Where the MX m , (NH 4 ) 2 X, in, X is at least one of S and Se; the MX m , MX n Where M is one of Mo, W, V, Nb, Ta, the MX m Among them, the value range of m is 2≤m≤3; the MX n Among them, the value range of n is 2≤n﹤3, and n≤m.
[0028] Specifically, in the above step S01, the MX m The powder is a metalsulfide powder, that is, M is one of Mo, W, V, Nb, an...
Embodiment 1
[0058] A preparation method of polysulfide precursor solution includes the following steps:
[0059] 10mmol MoS 3 Dissolve in 10ml water, add 10mmol(NH 4 ) 2 S, after stirring until it is completely dissolved, heat and stir at 60°C for 1 h, and mark its solution as M1.
Embodiment 2
[0061] A preparation method of polysulfide precursor solution includes the following steps:
[0062] 10mmol WS 3 Dissolve in 10ml water, add 10mmol(NH 4 ) 2 S, after stirring until it is completely dissolved, heat and stir at 60°C for 1 h, and mark its solution as W1.
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More
PUM
Property
Measurement
Unit
thickness
aaaaa
aaaaa
Login to View More
Abstract
The invention provides a preparation method of an MXn film. The method includes the following steps that: MXm powder is provided, the MXm powder is dispersed in a solvent, so that a MXm dispersion canbe obtained; (NH4)2X is added to the MXm dispersion, and an obtained mixture is stirred or subjected to ultrasonic treatment until a clear mixed solution is obtained; the mixed solution is heated andstirred, so that a polysulfide precursor solution can be obtained, and a film layer is deposited by means of a solution treatment method; and after the film layer is annealed at 80 to 120 DEG C, thefilm layer is subjected to heating treatment in a reducing or inertatmosphere at 250 to 300 DEG C, so that the MXn film can be obtained. According to the method of the invention, X in the MXm, (NH4)2X, and MX n is at least one material selected from S and Se; and M in the MXm and MXn is a material selected from Mo, W, V, Nb and Ta; the value of m in the MXm is larger than or equal to 2 and is smaller than or equal to 3; and the value of n in the MXn is larger than or equal to 2 and is smaller than 3; and n is smaller than or equal to m.
Description
Technical field [0001] The invention belongs to the technical field of flat panel displays, and in particular relates to an MX n Film preparation method and its application. Background technique [0002] Quantum dot light-emitting diodes (QLEDs) have the advantages of narrow FWHM (FWHM), adjustable colors, and can be prepared by solution methods, making them a strong competitor of next-generation display technology. In order to better promote the application of QLED devices, researchers have carried out research on QLED devices from different perspectives. Some scholars have studied quantum dots (QDs) and their light-emitting layers, hole transport layers (HTL), electron transport layers (ETL) and electrodes starting from the layer structure and materials of QLED devices; some scholars have combined the structure of QLED devices , Performance and stability are studied. In these studies, the stability of QLED devices has become the focus of commercial concern. At present, in QL...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More
Application Information
Patent Timeline
Application Date:The date an application was filed.
Publication Date:The date a patent or application was officially published.
First Publication Date:The earliest publication date of a patent with the same application number.
Issue Date:Publication date of the patent grant document.
PCT Entry Date:The Entry date of PCT National Phase.
Estimated Expiry Date:The statutory expiry date of a patent right according to the Patent Law, and it is the longest term of protection that the patent right can achieve without the termination of the patent right due to other reasons(Term extension factor has been taken into account ).
Invalid Date:Actual expiry date is based on effective date or publication date of legal transaction data of invalid patent.
Login to View More 
