558 results about "Full width at half maximum" patented technology

A ZnO-based transparent conductive film has practicable moisture resistance, desired characteristics of a transparent conductive film, and excellent economy. The transparent conductive film is produced by growing ZnO doped with a group III element oxide on a substrate and has a region with a crystal structure in which a c-axis grows along a plurality of different directions. The transparent conductive film produced by growing ZnO doped with a group III element oxide on a substrate has a ZnO (002) rocking curve full width at half maximum of about 13.5° or more.

ZnO is doped with a group III element oxide so that the ratio of the group III element oxide in the transparent conductive film is about 7% to about 40% by weight.

The transparent conductive film is formed on the substrate with a SiNx thin film provided therebetween.

The transparent conductive film is formed on the substrate by a thin film formation method with a bias voltage applied to the substrate.

A coated nanocrystal capable of light emission includes a substantially monodisperse nanoparticle selected from the group consisting of CdX, where x=S, Se, Te and an overcoating of ZnY, where Y=S, Se, uniformly deposited thereon, said coated nanoparticle characterized in that when irradiated the particles exhibit photoluminescence in a narrow spectral range of no greater than about 60 nm, and most preferably 40 nm, at full width half max (FWHM). The particle size of the nanocrystallite core is in the range of about 20 Å to about 125 Å, with a deviation of less than 10% in the core. The coated nanocrystal exhibits photoluminescence having quantum yields of greater than 30%.

A white light LED is described that uses an LED die that emits visible blue light in a wavelength range of about 450-470 nm. A red phosphor or quantum dot material converts some of the blue light to a visible red light having a peak wavelength between about 605-625 nm with a full-width-half-maximum (FWHM) less than 80 nm. A green phosphor or quantum dot material converts some of the blue light to a green light having a FWHM greater than 40 nm, wherein the combination of the blue light, red light, and green light produces a white light providing a color rendering of R_a,8>90 and a color temperature of between 2500K-5000K. Preferably, the red and green converting material do not saturate with an LED die output of 100 W/cm² and can reliably operate with an LED die junction temperature over 100 degrees C.

The magnetic tape device includes a TMR head (reproducing head); and a magnetic tape including a magnetic layer including ferromagnetic hexagonal ferrite powder, a binding agent, and fatty acid ester, in which an XRD intensity ratio obtained by an X-ray diffraction analysis of the magnetic layer by using an In-Plane method is 0.5 to 4.0, a vertical direction squareness ratio is 0.65 to 1.00, Ra measured regarding a surface of the magnetic layer is equal to or smaller than 2.0 nm, full widths at half maximum of spacing distribution measured by optical interferometry regarding the surface of the magnetic layer before and after performing a vacuum heating with respect to the magnetic tape are greater than 0 nm and equal to or smaller than 7.0 nm, and a difference between spacings before and after the vacuum heating is greater than 0 nm and equal to or smaller than 8.0 nm.

A semiconductor light-emitting device member excellent in transparency, light resistance, and heat resistance and capable of sealing a semiconductor light-emitting device without causing cracks and peeling even after a long-time use is provided. Therefore, a semiconductor light-emitting device member that comprises (1) in a solid Si-nuclear magnetic resonance spectrum, at least one peak selected from a group consisting of (i) peaks whose peak top position is in an area of a chemical shift of −40 ppm to 0 ppm inclusive, and whose full width at half maximum is 0.3 ppm to 3.0 ppm inclusive, and (ii) peaks whose peak top position is in an area of the chemical shift of −80 ppm or more and less than −40 ppm, and whose full width at half maximum is 0.3 ppm to 5.0 ppm inclusive, wherein (2) silicon content is 20 weight % or more and (3) silanol content is 0.1 weight % to 10 weight % inclusive is used.

Provided is a magnetic tape with the total thickness of a non-magnetic and magnetic layers is equal to or smaller than 0.60 μm, a C—H derived C concentration calculated from a C—H peak area ratio of C1s spectra by ESCA on the surface of the magnetic layer at a photoelectron take-off angle of 10 degrees is equal to or greater than 45 atom %, full widths at half maximum of spacing distribution measured by optical interferometry regarding the surface of the magnetic layer before and after vacuum heating with respect to the magnetic tape are respectively greater than 0 nm and equal to or smaller than 7.0 nm, and a difference between a spacing measured after the vacuum heating and a spacing measured before the vacuum heating is greater than 0 nm and equal to or smaller than 8.0 nm.

Provided is a magnetic tape in which a thickness of a back coating layer is equal to or smaller than 0.20 μm, a C—H derived C concentration calculated from a C—H peak area ratio of C1s spectra obtained by X-ray photoelectron spectroscopic analysis performed on the surface of the back coating layer at a photoelectron take-off angle of 10 degrees, is equal to or greater than 35 atom %, full widths at half maximum of spacing distribution measured by optical interferometry regarding the surface of the back coating layer before and after performing a vacuum heating with respect to the magnetic tape are respectively greater than 0 nm and equal to or smaller than 10.0 nm, and a difference between a spacing measured after performing the vacuum heating and a spacing measured before performing the vacuum heating is greater than 0 nm and equal to or smaller than 8.0 nm.

Provided is a magnetic tape in which the total thickness of a non-magnetic layer and a magnetic layer is equal to or smaller than 0.60 μm, the magnetic layer includes a timing-based servo pattern, the magnetic layer includes fatty acid ester, a full width at half maximum of spacing distribution measured by optical interferometry regarding the surface of the magnetic layer before performing vacuum heating with respect to the magnetic tape is greater than 0 nm and equal to or smaller than 7.0 nm, a full width at half maximum of spacing distribution measured after performing the vacuum heating is greater than 0 nm and equal to or smaller than 7.0 nm, and a difference between a spacing measured after performing the vacuum heating and a spacing measured before performing the vacuum heating is greater than 0 nm and equal to or smaller than 8.0 nm.

A lighting fixture for facilitating plant growth and a light emitting component. The fixture comprises a single light emission source LED device which provides at least two emission peaks in the wavelength range of 300-800 nm and at least one of the emission peaks has Full Width of Half Maximum (FWHM) at least 50 nm or higher. The emission peaks of the LED match well with a plant photosynthesis response spectrum and is therefore particularly suitable for high efficiency artificial lighting.

The magnetic tape device includes: a magnetic tape; and a reproducing head, in which the reproducing head is a TMR head, the magnetic tape includes a non-magnetic support, and a magnetic layer including ferromagnetic powder, a binding agent, and fatty acid ester on the non-magnetic support, a full width at half maximum of spacing distribution measured by optical interferometry regarding a surface of the magnetic layer before performing a vacuum heating with respect to the magnetic tape is greater than 0 nm and equal to or smaller than 7.0 nm, a full width at half maximum of spacing distribution measured after performing the vacuum heating is greater than 0 nm and equal to or smaller than 7.0 nm, and a difference between a spacing measured by optical interferometry regarding the surface of the magnetic layer after performing the vacuum heating with respect to the magnetic tape and a spacing measured before performing the vacuum heating is greater than 0 nm and equal to or smaller than 9.0 nm.

Provided is a magnetic tape in which an Ra measured regarding a surface of a magnetic layer is equal to or smaller than 1.8 nm, Int(110)/Int(114) of a hexagonal ferrite crystal structure obtained by an XRD analysis of the magnetic layer by using an In-Plane method is 0.5 to 4.0, a vertical squareness ratio of the magnetic tape is 0.65 to 1.00, full widths at half maximum of spacing distribution measured by optical interferometry regarding the surface of the back coating layer before and after performing a vacuum heating with respect to the magnetic tape are greater than 0 nm and equal to or smaller than 10.0 nm, and a difference between the spacings measured by optical interferometry regarding the surface of the back coating layer before and after performing the vacuum heating is greater than 0 nm and equal to or smaller than 8.0 nm.

The magnetic tape device includes a TMR head (servo head); and a magnetic tape including a magnetic layer including ferromagnetic hexagonal ferrite powder, a binding agent, and fatty acid ester, in which an XRD intensity ratio obtained by an X-ray diffraction analysis of the magnetic layer by using an In-Plane method is 0.5 to 4.0, a vertical direction squareness ratio is 0.65 to 1.00, Ra measured regarding a surface of the magnetic layer is equal to or smaller than 2.0 nm, full widths at half maximum of spacing distribution measured by optical interferometry regarding a surface of the magnetic layer before and after performing a vacuum heating with respect to the magnetic tape are greater than 0 nm and equal to or smaller than 7.0 nm, and a difference between spacings before and after the vacuum heating is greater than 0 nm and equal to or smaller than 8.0 nm.

The present invention relates to a phosphor that satisfies requirements (1) to (3):

• • (1) the phosphor satisfies Formula [2] and/or Formula [3]:

85≦{R₄₅₅(125)/R₄₅₅(25)}×100<110  [2]

92≦{R₄₀₅(100)/R₄₀₅(25)}×100<110  [3]

wherein R₄₅₅(125) represents an emission peak intensity when the phosphor is excited by light having a peak wavelength of 455 nm at 125° C.,

• • (2) the emission peak wavelength is in the range of 570 nm to 680 nm, and
  • (3) the full width at half maximum of an emission peak is 90 nm or less.

The phosphor of the present invention has a high luminous efficiency and emits light of orange to red with high luminance. The use of the phosphor makes it possible to produce a light-emitting device, an illumination apparatus, and an image display, having a high efficiency and excellent color rendering properties.

The invention discloses a high-yield preparing method for inorganic halogen perovskite fluorescent quantum dots at the room temperature. The fluorescent quantum dots are CsPbX3, wherein X is equal to AxB1-x and is larger than or equal to 0 and smaller than or equal to 1, and A and B are any one of Cl, Br and I. The method comprises the following steps that firstly, lead halide and cesium halide are dissolved into dimethyl formamide, surfactant oleylamine and oleic acid are added, the mixture is stirred until complete dissolution, and a precursor solution is obtained; secondly, the precursor solution is dripped into a poor solvent at the speed of 0.08-0.13 mL/s and stirred evenly at the uniform speed, and the inorganic halogen perovskite fluorescent quantum dots CsPbX3 are obtained. The preparing method is implemented at the room temperature, protection gas is not needed, equipment is simple, mass production can be achieved, and full visible light band shining can be achieved by selecting halogen and adjusting the proportion of halogen. The full width at half maximum of the inorganic halogen perovskite fluorescent quantum dots prepared through the preparing method ranges from 16 nm to 39 nm, the fluorescence quantum efficiency is close to 90%, and the inorganic halogen perovskite fluorescent quantum dots can be stably stored for more than three months, and can be used in the field of solar cells, lasers, light detectors, light-emitting diodes and the like.