Non-PEDOT: PSS inverted series quantum dot light emitting device and preparation method thereof

A quantum dot light-emitting and quantum dot technology, which is applied in the field of new display device manufacturing, can solve the problems of low device efficiency and repeatability, device stability influence and reduction, etc., to improve external quantum efficiency, improve stability, and simple process. Effect

Inactive Publication Date: 2019-04-26
SHANGHAI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The general inverted series QLED connects two electroluminescent units in series through PEDOT:PSS / zinc oxide nanoparticles as the connecting layer, but the PEDOT:PSS aqueous dispersion will seriously affect the stability of the device due to its hygroscopicity. In addition, PEDOT:PSS thin films are vulnerable to multilayer solution spin-coating process, resulting in low device efficiency and reproducibility
With the development of the display and lighting market towards high-efficiency and long-life light-emitting devices, QLED also faces the problem that the working life of the device will be significantly reduced due to Coulomb degradation and overheating under high current density.

Method used

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  • Non-PEDOT: PSS inverted series quantum dot light emitting device and preparation method thereof
  • Non-PEDOT: PSS inverted series quantum dot light emitting device and preparation method thereof
  • Non-PEDOT: PSS inverted series quantum dot light emitting device and preparation method thereof

Examples

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Embodiment 1

[0052] In this example, see figure 1 , a non-PEDOT:PSS inverted series quantum dot light-emitting device, from bottom to top, a base 1, a first light-emitting unit, a second light-emitting unit, and an anode 13 are formed into an inverted series light-emitting device structure, and the base 1 is provided with an ITO thin film cathode 2; The first light-emitting unit is composed of the first electron transport layer 3, the first quantum dot light-emitting layer 4, the first interface modification layer 5, the first hole transport layer 6 and the first hole injection layer 7 from bottom to top. Form the first light-emitting unit structure; the second light-emitting unit has a second interface modification layer 8, a second electron transport layer 9, a second quantum dot light-emitting layer 10, a second hole transport layer 11 and a second hole injection layer 12 The layers of each layer form the second light-emitting unit structure from bottom to top; the anode 13 is arranged ...

Embodiment 2

[0085] This embodiment is basically the same as Embodiment 1, especially in that:

[0086] In this embodiment, the first hole injection layer 7 is a PMA film with a thickness of 10nm; the second electron transport layer 9 is a zinc oxide film with a thickness of 65nm; the second interface modification layer 8 is made of metal The interface layer film, the thickness of the metal interface layer film is 5nm, and the metal interface layer film is a composite film of metal-metal shallow metal oxide gradient material with metal as the matrix, thereby forming a PMA film / metal interface layer film / zinc oxide A composite connection structure in the form of a sandwich composed of thin films connects two electroluminescence units in series. The metal interface layer film adopts nano-Al film, the metal Al interface layer film and its surface layer AlO x Oxide film formation Al:AlO x Gradient material composite film. The thickness of the ITO thin film cathode 2 is 150nm; the thickness ...

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Abstract

The invention provides a non-PEDOT: PSS inverted series quantum dot light emitting device and a preparation method thereof. A second interface modification layer is arranged between a first hole injection layer and a second electron transport layer to form a connecting layer composite structure connected with two electroluminescent units in series. The interface modification layer is additionallyarranged between the hole injection layer of one electroluminescent unit and the electron transport layer of the other electroluminescent unit, and the hole injection layer / the interface modificationlayer / the electron transport layer form the composite connection structure serving as a connecting layer to be connected with the two electroluminescent units in series, so that the quantum dot light-emitting device is suitable for four colors of red, yellow, green and blue, and can effectively improve the light emitting efficiency, brightness and prolong the service life.

Description

technical field [0001] The invention relates to a quantum dot light-emitting device and a preparation method thereof, in particular to an inverted quantum dot light-emitting device and a preparation method thereof, which are applied in the technical field of manufacturing new display devices. Background technique [0002] Quantum dot light-emitting diodes (QLEDs) have attracted much attention in the fields of new displays and solid-state lighting due to their unique advantages such as wide luminous color gamut, high color saturation, high brightness, high efficiency, and low-cost manufacturing, and have broad application value. [0003] The use of tandem structure is an effective method to improve the efficiency and lifetime of light-emitting diodes, and tandem quantum dot light-emitting devices have also received extensive attention. The general inverted series QLED connects two electroluminescent units in series through PEDOT:PSS / zinc oxide nanoparticles as the connecting ...

Claims

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Application Information

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IPC IPC(8): H01L51/50H01L51/56
CPCH10K50/115H10K50/131H10K71/00
Inventor 杨绪勇吴倩倩曹璠王胜王浩然
Owner SHANGHAI UNIV
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