The invention relates to a novel
graphene material and a
chemical vapor deposition (CVD) preparation technology, and in particular relates to a preparation method of high-quality large-size monocrystal
graphene, suitable for preparing high-quality large-size monocrystal
graphene. The preparation method comprises the steps of: based on a
chemical vapor deposition technology, in the presence of a carrier gas containing
hydrogen, carrying out heat treatment on a
metal substrate (
copper,
platinum and other metals) by taking a
hydrocarbon compound as a
carbon source, and carrying out catalytic
cracking at a high temperature by virtue of the
carbon source gas, so as to grow the monocrystal graphene;
etching graphene by regulating concentrations of
hydrogen and
carbon source, so as to greatly reduce distribution density of the monocrystal graphene; and regulating a reaction
atmosphere again to grow monocrystal graphene again, and carrying out the growth operations several times in the same way, so as to finally obtain the high-quality large-size monocrystal graphene. The high-quality inch-grade monocrystal graphene disclosed by the invention lays the foundation for application in a nano-
electronic component, a transparent conductive film, a display, a
solar cell electrode, a gas sensor, a thin-film
electronic component and other photoelectric fields.