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Preparation method of high-quality large-size monocrystal graphene

A single-crystal graphene, large-size technology, applied in the preparation of high-quality large-size single-crystal graphene, the field of preparing high-quality large-size single-crystal graphene, can solve the problem that graphene is prone to defects, affecting mobility and conductivity and other problems, to achieve the effect of low cost, large size and easy operation

Active Publication Date: 2014-03-19
INST OF METAL RESEARCH - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Moreover, graphene is prone to defects during nucleation and growth
These greatly affect the mobility and conductivity

Method used

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  • Preparation method of high-quality large-size monocrystal graphene
  • Preparation method of high-quality large-size monocrystal graphene
  • Preparation method of high-quality large-size monocrystal graphene

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0029] Such as figure 1 As shown, the present invention adopts a horizontal reaction furnace to grow graphene, and the two ends of the horizontal reaction furnace are respectively provided with a gas inlet 1 and a gas outlet 4, and the metal substrate 2 (platinum in this embodiment) is placed in the high temperature zone of the horizontal reaction furnace. The thermocouple 3 is located in the high temperature zone of the horizontal reactor to monitor the reaction temperature in real time. First, the polycrystalline platinum sheet (thickness 180 μm, length×width=20mm×16mm) was ultrasonically cleaned in acetone, water and ethanol for 40 minutes respectively. After cleaning, the platinum sheet was placed in a high-temperature furnace and annealed at 1100° C. for 10 hours to make the single grain reach the millimeter level (the size of the single grain in this embodiment is specifically 1 mm to 5 mm). Then, place the annealed platinum sheet in the central area of ​​a horizontal r...

Embodiment 2

[0032] Such as figure 1 As shown, the present invention adopts a horizontal reaction furnace to grow graphene, and the two ends of the horizontal reaction furnace are respectively provided with a gas inlet 1 and a gas outlet 4, and the metal substrate 2 (platinum in this embodiment) is placed in the high temperature zone of the horizontal reaction furnace. The thermocouple 3 is located in the high temperature zone of the horizontal reactor to monitor the reaction temperature in real time. First, the polycrystalline platinum sheet (thickness 180 μm, length×width=5cm×5cm) was ultrasonically cleaned in acetone, water and ethanol for 40 minutes respectively. After cleaning, the platinum sheet was placed in a high-temperature furnace and annealed at 1100° C. for 10 hours to make the single grain reach the millimeter level (the size of the single grain in this embodiment is specifically 1 mm to 5 mm). Then, place the annealed platinum sheet in the central area of ​​a horizontal rea...

Embodiment 3

[0035] Such as figure 1 As shown, the present invention adopts a horizontal reaction furnace to grow graphene, and the two ends of the horizontal reaction furnace are respectively provided with a gas inlet 1 and a gas outlet 4, and the metal substrate 2 (copper in this embodiment) is placed in the high temperature zone of the horizontal reaction furnace. The thermocouple 3 is located in the high temperature zone of the horizontal reactor to monitor the reaction temperature in real time. First, a polycrystalline copper sheet (thickness 25 μm, length × width = 5 cm × 5 cm) was ultrasonically cleaned in acetone, water, and ethanol for 40 minutes. After cleaning, the copper sheet was placed in a high-temperature furnace and annealed at 1083° C. for 10 hours to make the individual grains reach the millimeter level (the size of the individual grains in this embodiment is specifically 1 mm to 5 mm). Then, the annealed copper sheet is placed in the central area of ​​a horizontal reac...

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Abstract

The invention relates to a novel graphene material and a chemical vapor deposition (CVD) preparation technology, and in particular relates to a preparation method of high-quality large-size monocrystal graphene, suitable for preparing high-quality large-size monocrystal graphene. The preparation method comprises the steps of: based on a chemical vapor deposition technology, in the presence of a carrier gas containing hydrogen, carrying out heat treatment on a metal substrate (copper, platinum and other metals) by taking a hydrocarbon compound as a carbon source, and carrying out catalytic cracking at a high temperature by virtue of the carbon source gas, so as to grow the monocrystal graphene; etching graphene by regulating concentrations of hydrogen and carbon source, so as to greatly reduce distribution density of the monocrystal graphene; and regulating a reaction atmosphere again to grow monocrystal graphene again, and carrying out the growth operations several times in the same way, so as to finally obtain the high-quality large-size monocrystal graphene. The high-quality inch-grade monocrystal graphene disclosed by the invention lays the foundation for application in a nano-electronic component, a transparent conductive film, a display, a solar cell electrode, a gas sensor, a thin-film electronic component and other photoelectric fields.

Description

Technical field: [0001] The invention relates to a new graphene material and its chemical vapor deposition (CVD) preparation technology, specifically a method for preparing high-quality large-size single-crystal graphene, which is suitable for preparing high-quality large-size single-crystal graphene. Background technique: [0002] Graphene is a single-layer carbon atom crystal tightly packed into a two-dimensional honeycomb crystal structure, and is the basic unit for constructing other dimensional carbon materials (such as zero-dimensional fullerene, one-dimensional carbon nanotubes, and three-dimensional graphite). This strictly two-dimensional atomic crystal material has excellent electrical, thermal and mechanical properties, such as: its electron mobility is as high as 200,000 cm at room temperature 2 / V·s, thermal conductivity up to 5000W·m -1 ·K -1 , Young's modulus up to 1TPa. The excellent performance of graphene makes it expected to be widely used in the fields...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/02C30B25/00
Inventor 任文才马腾成会明
Owner INST OF METAL RESEARCH - CHINESE ACAD OF SCI
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