12 results about "Polycrystalline copper" patented technology

The invention discloses a preparation method of a polycrystalline-to-single crystal copper foil through efficient hydrogen enhanced etching. The preparation method comprises the following steps: 1, sequentially soaking a rolled polycrystalline copper foil in an acid solution of acetone and an acid solution of absolute ethyl alcohol; 2, ultrasonically cleaning the copper foil in deionized water, and blow-drying the surface by adopting inert gas; 3, cutting the rolled polycrystalline copper foil into a regular shape, flatly laying the rolled polycrystalline copper foil on the quartz plate, repeating the step, putting the quartz plate into the tubular furnace, and ensuring that oxygen in a pipeline is completely removed; 4, under the normal pressure, inert gas output is kept in the tubular furnace, a temperature rising program is set, hydrogen is introduced when the temperature reaches the copper foil annealing temperature, and finally high-quality single crystal Cu (111) is stably obtained; the method has the advantages that a traditional electrolytic copper foil preparation link is completely omitted, the hydrogen etching time is prolonged in a CVD tubular furnace under normal pressure, the hydrogen flow is increased, selective etching of hydrogen to grain boundary high-energy defects is enhanced, abnormal growth of grains and thorough swallowing of the grain boundary are promoted, and the large-area single crystal Cu (111) with the single crystal rate larger than 99% is obtained.

The invention provides a method for epitaxial growth of a gallium nitride epitaxial wafer based on a selective area of an amorphous substrate and the gallium nitride epitaxial wafer. The gallium nitride epitaxial wafer comprises an amorphous substrate, a polycrystalline copper film, a silicon oxide layer and a gallium nitride layer which are arranged in a stacked mode. The polycrystalline copper film has an orientation [111]; the gallium nitride layer has [002] orientation. According to the gallium nitride epitaxial wafer provided by the invention, the combination of the amorphous substrate and the polycrystalline copper film is used as the substrate, a traditional single-crystal substrate and an over-thick copper substrate are replaced, the annealing time is shortened, meanwhile, the flatness and mechanical properties of the substrate are ensured by the amorphous substrate, the growth quality of the gallium nitride layer is improved, and large-scale popularization and application are facilitated.

A purification method for a copper foil, which belongs to the field of material purification. The purification method for a copper foil comprises: placing an assembly in a central temperature zone of a tubular furnace, and annealing same for at least 5 h in a mixed atmosphere of an inert gas and hydrogen under the condition that the temperature of the central temperature zone is maintained at 1050-1070° C., so as to obtain a purified single-crystal copper foil, wherein the assembly is composed of a polycrystalline copper foil containing impurities and a carrier supporting the polycrystalline copper foil, the polycrystalline copper foil is a rolled copper foil, the flow of the inert gas is 500-600 sccm, and the flow of the hydrogen is 30-100 sccm. The purification method can not only directly purify an industrial polycrystalline copper foil and alleviate the problems of an existing purification method being high in terms of energy consumption and high in terms of preparation difficulty, but also convert the industrial polycrystalline copper foil into a single crystal and improve the product performance.

A method of forming an integrated circuit (IC) package includes electroplating a seed layer in a first electroplating process to form a polycrystalline copper layer of a bond pad structure of an IC structure over an active circuit region of the IC structure. The method also including electroplating over the polycrystalline copper layer in a second electroplating process, different than the first electroplating process, to form a nanotwin copper layer of the bond pad structure. The method further including attaching a bond wire to the nanotwin copper layer of the bond pad structure to form a copper-to-copper bond between the bond wire and the nanotwin copper layer of the bond pad structure.

The invention relates to a preparation method of a high-conductivity polycrystalline copper wire, which comprises the following steps: S1, placing a polycrystalline copper wire with the diameter of 50-2000 microns in a chemical vapor deposition system, and growing a graphene film on the surface of the polycrystalline copper wire at the growth temperature of 350-650 DEG C; and S2, packaging the polycrystalline copper wire on which the graphene film grows by using metal to form a packaging metal layer, thereby preparing the high-conductivity polycrystalline copper wire. According to the method, preparation of the ultrahigh-conductivity copper wire is achieved, the application field of the copper wire can be expanded, and the method has great significance in achieving wide application of the copper wire in the field of microelectronics.

Example packages comprise a semiconductor die including a device side having circuitry; a metal member coupled to the device side; a copper member having a bottom surface coupled to the metal member and a top surface opposite the bottom surface, the copper member including at the top surface a nanotwin copper portion having a thickness between 0.5 microns and 3 microns, the copper member including a polycrystalline copper portion contacting the nanotwin copper portion and extending to the bottom surface, the nanotwin copper portion comprising a twin boundary separating a first region having a first grain structure from a second region having a second grain structure; a wire bond coupled directly to the nanotwin copper portion of the copper member, the wire bond contacting multiple regions of the nanotwin copper portion; and a mold compound covering the semiconductor die, the metal member, the copper member, and the wire bond.

The invention relates to a selectively formed bond pad structure. A method of forming an integrated circuit (IC) package includes electroplating a seed layer (206) in a first electroplating process (1300) to form a polycrystalline copper layer (208) of a bond pad structure (102) of an IC structure (100) over an active circuit region of the IC structure (100). The method also includes electroplating over the polycrystalline copper layer (208) in a second electroplating process (1900) different from the first electroplating process (1300) to form a nano-twin copper layer (210) of the bond pad structure (102). The method further includes attaching a bond wire (126) to the nano-twin copper layer (210) of the bond pad structure (102) to form a copper-to-copper bond between the bond wire (126) and the nano-twin copper layer (210) of the bond pad structure (102).

The application provides a wide-temperature-range super-elastic polycrystalline copper-aluminum-manganese alloy additive manufacturing method, which comprises the following steps: step 1, pretreating copper-aluminum-manganese raw materials; step 2, weighing the required mass of the pretreated copper-aluminum-manganese raw materials according to a fixed component proportion; step 3, electric arc smelting the copper-aluminum-manganese raw materials after component proportioning to obtain copper-aluminum-manganese alloy ingots; step 4, atomizing the copper-aluminum-manganese alloy ingots to obtain copper-aluminum-manganese alloy powder; step 5, 3D printing and in-situ secondary melting the copper-aluminum-manganese alloy powder, and wire cutting the copper-aluminum-manganese alloy sample after printing; and step 6, stress relief heat treatment of the copper-aluminum-manganese alloy sample to obtain a polycrystalline copper-aluminum-manganese alloy. The application can prepare a polycrystalline copper-aluminum-manganese alloy with excellent super-elasticity without solid solution treatment through component design and laser additive manufacturing method, and the alloy has controllable morphology, small grain size, uniform composition and favorable texture, and has large super-elastic strain and complete reverse phase transition.

Disclosed is a continuous preparation method of a large-area (100) single-crystal copper foil, a poly-crystal copper foil is connected to a reel-to-reel device, a carbon-based substrate is placed below the copper foil, and the large-area (100) single-crystal copper foil is prepared by applying a stress in a heat treatment process in a reducing / protective atmosphere under an environment with a temperature gradient. According to the invention, the stress is applied to the copper foil for the first time, and strain energy of the copper foil is accurately regulated and controlled, so as to make the strain energy become a main influence factor of grain boundary migration and lattice rotation, so that the strain energy in a growth process of the single-crystal copper foil is controlled to be dominant, and the large-area (100) single-crystal copper foil is controllably prepared through heat treatment in the reducing atmosphere.

Disclosed is a continuous preparation method of a large-area (100) single-crystal copper foil, a poly-crystal copper foil is connected to a reel-to-reel device, a carbon-based substrate is placed below the copper foil, and the large-area (100) single-crystal copper foil is prepared by applying a stress in a heat treatment process in a reducing / protective atmosphere under an environment with a temperature gradient. According to the invention, the stress is applied to the copper foil for the first time, and strain energy of the copper foil is accurately regulated and controlled, so as to make the strain energy become a main influence factor of grain boundary migration and lattice rotation, so that the strain energy in a growth process of the single-crystal copper foil is controlled to be dominant, and the large-area (100) single-crystal copper foil is controllably prepared through heat treatment in the reducing atmosphere.

The invention discloses a preparation method of single crystal copper for an Nb3Sn superconducting wire, which comprises the following steps of: adding a copper ingot into a graphite boat, starting a heating program to purify the copper ingot, putting the purified copper ingot into a graphite crucible to melt, heating a copper melt and keeping the temperature, clamping a seed crystal on a seed crystal rod, enabling the seed crystal to descend to the liquid level of the copper melt, and cooling to obtain the single crystal copper for the Nb3Sn superconducting wire. And the seed rod is communicated with a water cooling unit and is lifted upwards, and high-purity single crystal copper is obtained after demolding. According to the application, the problems of high loss and insufficient uniformity of the Nb3Sn superconducting wire in the application process of the existing polycrystalline copper are solved.

The invention discloses a large-size single crystal copper foil and a preparation method and application thereof, and belongs to the field of graphene film preparation. The preparation method of the single crystal copper foil comprises the following steps: placing a polycrystal copper foil in an area with a plurality of temperature areas which are connected in sequence, and sequentially carrying out gradient heating annealing, flat annealing and isothermal annealing to obtain the single crystal copper foil. Aiming at the large-size single-crystal copper foil suitable for growing a large-size single-crystal graphene film through a CVD method, a temperature gradient annealing method is improved, temperature gradient annealing is changed into gradient heating annealing, and the steps of flat temperature annealing and isothermal annealing are added; the invention develops a preparation method of a large-size single crystal copper foil suitable for growing a large-size single crystal graphene film by a CVD (Chemical Vapor Deposition) method. The large-size single crystal copper foil is simple in preparation process and can be produced on a large scale.