16 results about "Polycrystalline copper" patented technology

The application relates to a method for preparing textured copper by graphene directional control, and relates to the field of metal matrix composites, and comprises the following steps: 1) substrate preparation; 2) graphene induced growth; and 3) texture growth. The method for preparing textured copper by graphene directional control successfully induces copper grains to grow along the (111) plane preferential orientation by using the high matching property of graphene and copper lattices, and prepares dense (111) strong texture copper material. By greatly reducing the number of grain boundaries and reducing electron scattering, the material effectively breaks through the conductivity limit of polycrystalline copper, and the conductivity can reach more than 103% IACS, close to the level of single crystal copper, solves the problem that the conductivity of traditional polycrystalline copper is limited, the process flow is simple, the controllability is strong, and the method is easy to realize large-scale production. The obtained textured copper material not only has excellent electrical properties, but also has good mechanical strength, and can meet the strict requirements of high-end fields such as power transmission, electronic packaging and aerospace for high-conductivity and high-performance copper materials.

The invention discloses a preparation method of a polycrystalline-to-single crystal copper foil through efficient hydrogen enhanced etching. The preparation method comprises the following steps: 1, sequentially soaking a rolled polycrystalline copper foil in an acid solution of acetone and an acid solution of absolute ethyl alcohol; 2, ultrasonically cleaning the copper foil in deionized water, and blow-drying the surface by adopting inert gas; 3, cutting the rolled polycrystalline copper foil into a regular shape, flatly laying the rolled polycrystalline copper foil on the quartz plate, repeating the step, putting the quartz plate into the tubular furnace, and ensuring that oxygen in a pipeline is completely removed; 4, under the normal pressure, inert gas output is kept in the tubular furnace, a temperature rising program is set, hydrogen is introduced when the temperature reaches the copper foil annealing temperature, and finally high-quality single crystal Cu (111) is stably obtained; the method has the advantages that a traditional electrolytic copper foil preparation link is completely omitted, the hydrogen etching time is prolonged in a CVD tubular furnace under normal pressure, the hydrogen flow is increased, selective etching of hydrogen to grain boundary high-energy defects is enhanced, abnormal growth of grains and thorough swallowing of the grain boundary are promoted, and the large-area single crystal Cu (111) with the single crystal rate larger than 99% is obtained.

The invention provides a rapid and continuous preparation method of a single crystal copper foil. The method comprises the following steps: firstly, rolling the polycrystalline copper foil to generate internal stress in the copper foil, then enabling the rolled copper foil to sequentially pass through a temperature gradient area and a constant temperature area in a reducing atmosphere or an inert atmosphere, and increasing the temperature of the temperature gradient area along the advancing direction of the copper foil, and forming a plurality of abnormal crystal grains with the same orientation under the combined action of the temperature gradient and the internal stress, and growing and splicing the plurality of abnormal crystal grains with the same orientation in the constant-temperature region to obtain the single-crystal copper foil. When the method is used for preparing the single-crystallized copper foil, the preparation speed is not limited by the grain boundary migration rate, the efficiency is high, and the prepared single-crystallized copper foil is large in size and is prepared continuously.

The invention provides a method for epitaxial growth of a gallium nitride epitaxial wafer based on a selective area of an amorphous substrate and the gallium nitride epitaxial wafer. The gallium nitride epitaxial wafer comprises an amorphous substrate, a polycrystalline copper film, a silicon oxide layer and a gallium nitride layer which are arranged in a stacked mode. The polycrystalline copper film has an orientation [111]; the gallium nitride layer has [002] orientation. According to the gallium nitride epitaxial wafer provided by the invention, the combination of the amorphous substrate and the polycrystalline copper film is used as the substrate, a traditional single-crystal substrate and an over-thick copper substrate are replaced, the annealing time is shortened, meanwhile, the flatness and mechanical properties of the substrate are ensured by the amorphous substrate, the growth quality of the gallium nitride layer is improved, and large-scale popularization and application are facilitated.

A purification method for a copper foil, which belongs to the field of material purification. The purification method for a copper foil comprises: placing an assembly in a central temperature zone of a tubular furnace, and annealing same for at least 5 h in a mixed atmosphere of an inert gas and hydrogen under the condition that the temperature of the central temperature zone is maintained at 1050-1070° C., so as to obtain a purified single-crystal copper foil, wherein the assembly is composed of a polycrystalline copper foil containing impurities and a carrier supporting the polycrystalline copper foil, the polycrystalline copper foil is a rolled copper foil, the flow of the inert gas is 500-600 sccm, and the flow of the hydrogen is 30-100 sccm. The purification method can not only directly purify an industrial polycrystalline copper foil and alleviate the problems of an existing purification method being high in terms of energy consumption and high in terms of preparation difficulty, but also convert the industrial polycrystalline copper foil into a single crystal and improve the product performance.

A method of forming an integrated circuit (IC) package includes electroplating a seed layer in a first electroplating process to form a polycrystalline copper layer of a bond pad structure of an IC structure over an active circuit region of the IC structure. The method also including electroplating over the polycrystalline copper layer in a second electroplating process, different than the first electroplating process, to form a nanotwin copper layer of the bond pad structure. The method further including attaching a bond wire to the nanotwin copper layer of the bond pad structure to form a copper-to-copper bond between the bond wire and the nanotwin copper layer of the bond pad structure.

The invention relates to a preparation method of a high-conductivity polycrystalline copper wire, which comprises the following steps: S1, placing a polycrystalline copper wire with the diameter of 50-2000 microns in a chemical vapor deposition system, and growing a graphene film on the surface of the polycrystalline copper wire at the growth temperature of 350-650 DEG C; and S2, packaging the polycrystalline copper wire on which the graphene film grows by using metal to form a packaging metal layer, thereby preparing the high-conductivity polycrystalline copper wire. According to the method, preparation of the ultrahigh-conductivity copper wire is achieved, the application field of the copper wire can be expanded, and the method has great significance in achieving wide application of the copper wire in the field of microelectronics.

Example packages comprise a semiconductor die including a device side having circuitry; a metal member coupled to the device side; a copper member having a bottom surface coupled to the metal member and a top surface opposite the bottom surface, the copper member including at the top surface a nanotwin copper portion having a thickness between 0.5 microns and 3 microns, the copper member including a polycrystalline copper portion contacting the nanotwin copper portion and extending to the bottom surface, the nanotwin copper portion comprising a twin boundary separating a first region having a first grain structure from a second region having a second grain structure; a wire bond coupled directly to the nanotwin copper portion of the copper member, the wire bond contacting multiple regions of the nanotwin copper portion; and a mold compound covering the semiconductor die, the metal member, the copper member, and the wire bond.

The invention relates to a selectively formed bond pad structure. A method of forming an integrated circuit (IC) package includes electroplating a seed layer (206) in a first electroplating process (1300) to form a polycrystalline copper layer (208) of a bond pad structure (102) of an IC structure (100) over an active circuit region of the IC structure (100). The method also includes electroplating over the polycrystalline copper layer (208) in a second electroplating process (1900) different from the first electroplating process (1300) to form a nano-twin copper layer (210) of the bond pad structure (102). The method further includes attaching a bond wire (126) to the nano-twin copper layer (210) of the bond pad structure (102) to form a copper-to-copper bond between the bond wire (126) and the nano-twin copper layer (210) of the bond pad structure (102).

The application provides a wide-temperature-range super-elastic polycrystalline copper-aluminum-manganese alloy additive manufacturing method, which comprises the following steps: step 1, pretreating copper-aluminum-manganese raw materials; step 2, weighing the required mass of the pretreated copper-aluminum-manganese raw materials according to a fixed component proportion; step 3, electric arc smelting the copper-aluminum-manganese raw materials after component proportioning to obtain copper-aluminum-manganese alloy ingots; step 4, atomizing the copper-aluminum-manganese alloy ingots to obtain copper-aluminum-manganese alloy powder; step 5, 3D printing and in-situ secondary melting the copper-aluminum-manganese alloy powder, and wire cutting the copper-aluminum-manganese alloy sample after printing; and step 6, stress relief heat treatment of the copper-aluminum-manganese alloy sample to obtain a polycrystalline copper-aluminum-manganese alloy. The application can prepare a polycrystalline copper-aluminum-manganese alloy with excellent super-elasticity without solid solution treatment through component design and laser additive manufacturing method, and the alloy has controllable morphology, small grain size, uniform composition and favorable texture, and has large super-elastic strain and complete reverse phase transition.

The invention provides a preparation method of single crystal graphene, which comprises the following steps: placing a metal foil in a graphene growth container, and placing the graphene growth container in an atmosphere heating furnace; the graphene growth container is a closed container and is provided with an air inlet hole and an air outlet hole, and atmosphere in the atmosphere heating furnace can flow through an inner cavity of the graphene growth container through the air inlet hole and the air outlet hole; the total opening area of the air inlet hole and the total opening area of the air outlet hole are both 0.0075 mm < 2 >-0.19 mm < 2 >; the large-size single crystal graphene can be prepared by using the polycrystalline copper foil, and the problem that the single crystal copper foil is expensive is avoided. The copper foil can be used for experiments after being simply wiped with alcohol, and tedious steps such as ultrasonic cleaning, acid pickling and electrolytic polishing are avoided. The steps of oxidizing and forming the closed space are easy to operate, the repeatability is good, the single crystal graphene can be stably grown, and large-scale production is easy to carry out.

The invention relates to the technical field of high-entropy alloy performance, and discloses a method for exploring performance change of a high-entropy alloy in quasi-static loading and dynamic loading, and the method comprises the following steps: model construction: constructing a FeCrNiAl high-entropy alloy model, a model with random grain orientation and a high-entropy grain boundary modified nano columnar polycrystalline copper model by using lamps software; simulating a quasi-static loading process by adopting an MD method, and analyzing quasi-static loading data by utilizing ovito and origin software; dynamic loading simulation is conducted, wherein dynamic loading is simulated through an MD method, and dynamic loading data are analyzed through ovito and origin software; and respectively carrying out uniaxial compression on the constructed model with the random grain orientation by using lamps. According to the method, the influence of single factors such as the element ratio, the strain rate and the temperature on the performance of the FeCrNiAl-series high-entropy alloy is researched, meanwhile, interaction is also considered, and therefore the problem that limitation may be generated due to the fact that the influence of one or more factors is often researched in an existing high-entropy alloy exploration method in an isolated mode is solved.

Disclosed is a continuous preparation method of a large-area (100) single-crystal copper foil, a poly-crystal copper foil is connected to a reel-to-reel device, a carbon-based substrate is placed below the copper foil, and the large-area (100) single-crystal copper foil is prepared by applying a stress in a heat treatment process in a reducing / protective atmosphere under an environment with a temperature gradient. According to the invention, the stress is applied to the copper foil for the first time, and strain energy of the copper foil is accurately regulated and controlled, so as to make the strain energy become a main influence factor of grain boundary migration and lattice rotation, so that the strain energy in a growth process of the single-crystal copper foil is controlled to be dominant, and the large-area (100) single-crystal copper foil is controllably prepared through heat treatment in the reducing atmosphere.

Disclosed is a continuous preparation method of a large-area (100) single-crystal copper foil, a poly-crystal copper foil is connected to a reel-to-reel device, a carbon-based substrate is placed below the copper foil, and the large-area (100) single-crystal copper foil is prepared by applying a stress in a heat treatment process in a reducing / protective atmosphere under an environment with a temperature gradient. According to the invention, the stress is applied to the copper foil for the first time, and strain energy of the copper foil is accurately regulated and controlled, so as to make the strain energy become a main influence factor of grain boundary migration and lattice rotation, so that the strain energy in a growth process of the single-crystal copper foil is controlled to be dominant, and the large-area (100) single-crystal copper foil is controllably prepared through heat treatment in the reducing atmosphere.

The invention discloses a preparation method of single crystal copper for an Nb3Sn superconducting wire, which comprises the following steps of: adding a copper ingot into a graphite boat, starting a heating program to purify the copper ingot, putting the purified copper ingot into a graphite crucible to melt, heating a copper melt and keeping the temperature, clamping a seed crystal on a seed crystal rod, enabling the seed crystal to descend to the liquid level of the copper melt, and cooling to obtain the single crystal copper for the Nb3Sn superconducting wire. And the seed rod is communicated with a water cooling unit and is lifted upwards, and high-purity single crystal copper is obtained after demolding. According to the application, the problems of high loss and insufficient uniformity of the Nb3Sn superconducting wire in the application process of the existing polycrystalline copper are solved.

The invention discloses a large-size single crystal copper foil and a preparation method and application thereof, and belongs to the field of graphene film preparation. The preparation method of the single crystal copper foil comprises the following steps: placing a polycrystal copper foil in an area with a plurality of temperature areas which are connected in sequence, and sequentially carrying out gradient heating annealing, flat annealing and isothermal annealing to obtain the single crystal copper foil. Aiming at the large-size single-crystal copper foil suitable for growing a large-size single-crystal graphene film through a CVD method, a temperature gradient annealing method is improved, temperature gradient annealing is changed into gradient heating annealing, and the steps of flat temperature annealing and isothermal annealing are added; the invention develops a preparation method of a large-size single crystal copper foil suitable for growing a large-size single crystal graphene film by a CVD (Chemical Vapor Deposition) method. The large-size single crystal copper foil is simple in preparation process and can be produced on a large scale.