41 results about "Polycrystalline copper" patented technology

The invention relates to monocrystalline copper, and specifically relates to a method utilizing crystal merging growth to prepare monocrystalline copper strips. Utilization of polycrystalline copper strips which can gradually merge and grow at a sufficiently high temperature, grain boundary areas can be gradually centralized together due to the merging growth process, when the grain boundary areas are large enough or two large enough crystals meet each other, an area which cannot be converted into a monocrystalline is formed; through a method of step-by-step continuous heating, the area which is not converted into the monocrystalline always remains relatively small size, at the same time, the part which is not converted into the monocrystalline is avoided from generating anisotropy by an ultrasonic vibration effect, and a continuous single-crystal strip area is eventually obtained by heating to grow for enough time.

The invention discloses a preparation method of millimeter-scale monolayer monocrystalline graphene based on a polycrystalline copper foil and belongs to the technical field of thin film graphene material preparation. The preparation method includes: in an atmosphere with argon, hydrogen and oxygen, heating a copper foil; utilizing methane for catalytic cracking on the surface of the copper foil;growing on the inner wall of a rectangular box to form large-size monolayer monocrystalline graphene. Complex pretreatment of the copper foil is not needed, and the surface of the copper foil can be simply cleaned by only using anhydrous alcohol, so that introduction of new impurities is avoided. Pre-oxidation treatment of the copper foil is not needed, and monocrystalline growth of graphene can be realized by controlling flow of oxygen and pressure intensity in a CVD reaction cavity in the process of preparing graphene. On the premise that optimal oxygen flow parameters are utilized, growth time of monocrystalline graphene is controlled by controlling lasting time of methane to regulate size of monocrystalline graphene.

The invention discloses a preparation method of bulk single crystal copper, and the method comprises the following steps of: (1) carrying out high-temperature annealing treatment on a polycrystallinecopper blank below a melting point to obtain equiaxed grain polycrystalline copper; (2) carrying out extrusion molding on the equiaxed grain polycrystalline copper blank annealed in the step (1) to obtain a polycrystalline copper assembly; and (3) carrying out annealing treatment on the polycrystalline copper assembly subjected to extrusion molding in the step (2) again at a high temperature to obtain the bulk single crystal copper. According to the preparation method of the bulk single crystal copper, large-size single crystal copper is prepared through a non-melting method. According to themethod, pre-extrusion treatment is utilized, and then high-temperature annealing is carried out to prepare the bulk single crystal copper bar. The method is simple in process, easy to control, low incost and easy to popularize on a large scale.

The invention discloses a method for preparing bulk monocrystalline copper, which comprises the following steps: (1) annealing a polycrystalline copper blank at a high temperature below the melting point to obtain polycrystalline copper with equiaxed grains; (2) performing the step ( 1) extruding equiaxed grain polycrystalline copper billets after annealing to obtain polycrystalline copper aggregates; (3) annealing the polycrystalline copper aggregates extruded in step (2) at high temperature again to obtain Bulk single crystal copper. The invention discloses a method for preparing large block single crystal copper, which prepares large size single crystal copper through a non-melting method. The method utilizes pre-extrusion treatment, followed by high-temperature annealing to prepare bulk single-crystal copper rods. The invention has the advantages of simple process, easy control, low cost and easy large-scale popularization.

The invention discloses a silver copper nano alloy electro-catalyst and a laser gas phase deposition method thereof. The silver copper nano alloy electro-catalyst is obtained by depositing on a titanium sheet via a laser gas phase deposition method by taking the titanium sheet as a substrate and taking silver copper alloy as a target. The mole ratio of silver to copper in the silver copper nano alloy electro-catalyst is 4 to 1; the structure morphology of the silver copper nano alloy electro-catalyst is nanocrystalline and non-crystalline, and the nanocrystalline is embedded into the non-crystalline; or the structure morphology of the silver copper nano alloy electro-catalyst consists of nanocrystalline or multi-crystalline, wherein the nanocrystalline is a solid solution of a silver and copper face-centered cubic structure, the non-crystalline is metal copper, and the multi-crystalline is multi-crystalline copper. According to the silver copper nano alloy electro-catalyst and the laser gas phase deposition method, the oxygen reduction reaction catalytic effect is superior, and the preparation cost is low.

Polycrystalline materials are prepared by electrodeposition of a precursor material that is subsequently heat-treated to induce at least a threefold increase in the grain size of the material to yield a relatively high fraction of ‘special’ low Σ grain boundaries and a randomized crystallographic texture. The precursor metallic material has sufficient purity and a fine-grained microstructure (e.g., an average grain size of 4 nm to 5 pm). The resulting metallic material is suited to the fabrication of articles requiring high mechanical or physical isotropy and / or resistance to grain boundary-mediated deformation or degradation mechanisms.

The invention provides a preparation method of a large-size Cu(100) single-crystal copper foil. The method comprises the step that a polycrystalline copper foil doped with metallic elements serves as the raw material, and single-crystal Cu(100) with a super-large size is prepared through a special annealing technology. The preparation method of the large-size Cu(100) single-crystal copper foil solves the problem that the single-crystal Cu(100) is high in price, and preparation of the Cu(100) single-crystal copper foil is achieved through the very simple method.

The invention discloses a method for preparing a large-area monocrystal Cu (111). The method comprises is characterized in that a polycrystalline copper foil is treated several times to obtain the monocrystal Cu (111); every treatment successively comprises polishing and annealing; and the treatment frequency is not less than 3, and specifically is 3 or 4. The crystal faces of the copper foil obtained by the method are all (111) faces, and the area of the monocrystal Cu (111) is limited only by the size of a preparation container, so the method realizes large-area preparation of the monocrystal Cu, and has great application values.

The invention provides a large-size single crystal copper foil preparation method, wherein a polycrystalline copper foil is used as a raw material, one end is cut into a tip, and the large-size singlecrystal copper foil is prepared by using a special annealing process. According to the present invention, with the method, the problem of the high price of the single crystal copper foil is solved; and the preparation of the large-size single crystal copper foil is achieved through the simple method.

The invention belongs to the technical field of single crystal copper production, and particularly relates to a single crystal copper growth process which comprises the steps of heating, specifically, taking 4-6 parts of polycrystalline copper, pressing 4-6 parts of polycrystalline copper through a pressing tool, placing the pressed polycrystalline copper in a crucible, putting the crucible filled with the polycrystalline copper into a high-temperature descending furnace, continuously heating the high-temperature descending furnace until the temperature of the high-temperature descending furnace is increased to 1150-1350 DEG C, and then vacuumizing the interior of the high-temperature descending furnace until the pressure of the interior of the high-temperature descending furnace is 0.001-0.002 Pa; and conducting heat preservation, specifically, and when the temperature reaches the range of 1150-1350 DEG C, injecting inert protective gas into the high-temperature descending furnace. According to the specific production method of the single crystal copper, in the heat preservation process, protection is conducted through the inert protective gas, a temperature field is simulated through a computer, descending is controlled through a parameter program, sequential crystallization is conducted through a Bridgman-Stockbarger method, not only is the production cost reduced, but also the difficulty is reduced, and the preparation purity of the single crystal is increased.

The invention belongs to the technical field of materials, and particularly relates to a preparation method of single crystal copper. According to the preparation method of the single crystal copper, polycrystalline copper is placed in a graphite container to be subjected to annealing treatment, various impurities such as quartz slag and dust particles in the annealing treatment process are isolated outside the graphite container through the confinement space effect of the graphite container, and therefore impurity pollution caused by the impurities to the obtained single crystal copper is avoided; the surface cleanliness and the preparation efficiency of the obtained single crystal copper are greatly improved, the large-size single crystal copper can be obtained, and the obtained single crystal copper has more excellent performance. The preparation method provided by the invention is simple to operate, does not need to carry out complex and diverse surface pretreatment on the polycrystalline copper, and is favorable for realizing industrial preparation of the single crystal copper.

The invention discloses a method for preparing wafer-level single crystal copper foil and a method for preparing regular graphene. The preparation method of the wafer-level single crystal copper foil includes: performing notching treatment on the edge of the polycrystalline copper foil to obtain a polycrystalline copper foil with a notch; performing the polycrystalline copper foil with a notch under a hydrogen atmosphere Annealing treatment to obtain the single crystal copper foil. The preparation method of the wafer-level single crystal copper foil of the present invention has the characteristics of simple process, high efficiency, fast energy saving, and can rapidly prepare single crystal copper with large area, high single crystal degree and high flatness.

The present invention provides a method for using graphene to determining copper substrate surface crystal orientation. The method at least comprises: 1) providing a copper substrate with growing chemical vapor deposition (CVD) graphene, wherein the wrinkle region exists in the graphene; 2) placing the obtained copper substrate in an oxidizing atmosphere to oxidize, wherein the copper substrate positioned below the wrinkle region is preferentially oxidized to form oxidation stripes; and 3) according to the distribution condition of the oxidation stripes on the copper substrate surface, judging the copper substrate surface crystal orientation. According to the present invention, the determination method has characteristics of high repeatability, simpleness, easy performing, and low cost. With the method of the present invention, the surface crystal orientation distribution condition of the polycrystalline copper substrate with the graphene growing through the chemical vapor deposition can be easily known.

The invention provides a preparation method of meter-scale large single crystal high-index copper foil. The method uses commercial polycrystalline copper foil as a raw material, and prepares Cu(112) and Cu(113) by using a process of pre-oxidation protection and then annealing. , Cu(122), Cu(123), Cu(133), Cu(223), Cu(233), Cu(355) and other high-index surfaces and a series of meter-scale large single crystal high-index surface copper foils. The method proposed by the present invention solves the problems of Cu(112), Cu(113), Cu(122), Cu(123), Cu(133), Cu(223), Cu(233), Cu(355) and other high Due to the high price and preparation cost of index-faced single crystal copper foil and the lack of product supply in the market, through a very simple method, high-quality meter-level large single crystal Cu(112), Cu(113), Cu(122), Macro-production of Cu(123), Cu(133), Cu(223), Cu(233), Cu(355) and other high-index copper foils.

The invention provides a method for reducing circuit losses based on single crystal copper. The single crystal copper is formed by the growth of one grain and thus has no grain boundary and less lattice imperfection. Compared to polycrystalline copper, the single crystal copper has better electrical conductivity and transmission characteristics, and thus has an excellent effect of reducing energyloss. The method for reducing circuit loss based on single crystal copper, includes, but not limited to, using the single crystal copper as a material for manufacturing high-frequency cables, wires and integrated circuits, so as to reduce energy loss and high-frequency signal transmission loss of the circuit.