6 results about "Polycrystalline copper" patented technology

The invention discloses a preparation method of a polycrystalline-to-single crystal copper foil through efficient hydrogen enhanced etching. The preparation method comprises the following steps: 1, sequentially soaking a rolled polycrystalline copper foil in an acid solution of acetone and an acid solution of absolute ethyl alcohol; 2, ultrasonically cleaning the copper foil in deionized water, and blow-drying the surface by adopting inert gas; 3, cutting the rolled polycrystalline copper foil into a regular shape, flatly laying the rolled polycrystalline copper foil on the quartz plate, repeating the step, putting the quartz plate into the tubular furnace, and ensuring that oxygen in a pipeline is completely removed; 4, under the normal pressure, inert gas output is kept in the tubular furnace, a temperature rising program is set, hydrogen is introduced when the temperature reaches the copper foil annealing temperature, and finally high-quality single crystal Cu (111) is stably obtained; the method has the advantages that a traditional electrolytic copper foil preparation link is completely omitted, the hydrogen etching time is prolonged in a CVD tubular furnace under normal pressure, the hydrogen flow is increased, selective etching of hydrogen to grain boundary high-energy defects is enhanced, abnormal growth of grains and thorough swallowing of the grain boundary are promoted, and the large-area single crystal Cu (111) with the single crystal rate larger than 99% is obtained.

A purification method for a copper foil, which belongs to the field of material purification. The purification method for a copper foil comprises: placing an assembly in a central temperature zone of a tubular furnace, and annealing same for at least 5 h in a mixed atmosphere of an inert gas and hydrogen under the condition that the temperature of the central temperature zone is maintained at 1050-1070° C., so as to obtain a purified single-crystal copper foil, wherein the assembly is composed of a polycrystalline copper foil containing impurities and a carrier supporting the polycrystalline copper foil, the polycrystalline copper foil is a rolled copper foil, the flow of the inert gas is 500-600 sccm, and the flow of the hydrogen is 30-100 sccm. The purification method can not only directly purify an industrial polycrystalline copper foil and alleviate the problems of an existing purification method being high in terms of energy consumption and high in terms of preparation difficulty, but also convert the industrial polycrystalline copper foil into a single crystal and improve the product performance.

A method of forming an integrated circuit (IC) package includes electroplating a seed layer in a first electroplating process to form a polycrystalline copper layer of a bond pad structure of an IC structure over an active circuit region of the IC structure. The method also including electroplating over the polycrystalline copper layer in a second electroplating process, different than the first electroplating process, to form a nanotwin copper layer of the bond pad structure. The method further including attaching a bond wire to the nanotwin copper layer of the bond pad structure to form a copper-to-copper bond between the bond wire and the nanotwin copper layer of the bond pad structure.

The invention relates to a selectively formed bond pad structure. A method of forming an integrated circuit (IC) package includes electroplating a seed layer (206) in a first electroplating process (1300) to form a polycrystalline copper layer (208) of a bond pad structure (102) of an IC structure (100) over an active circuit region of the IC structure (100). The method also includes electroplating over the polycrystalline copper layer (208) in a second electroplating process (1900) different from the first electroplating process (1300) to form a nano-twin copper layer (210) of the bond pad structure (102). The method further includes attaching a bond wire (126) to the nano-twin copper layer (210) of the bond pad structure (102) to form a copper-to-copper bond between the bond wire (126) and the nano-twin copper layer (210) of the bond pad structure (102).

The application provides a wide-temperature-range super-elastic polycrystalline copper-aluminum-manganese alloy additive manufacturing method, which comprises the following steps: step 1, pretreating copper-aluminum-manganese raw materials; step 2, weighing the required mass of the pretreated copper-aluminum-manganese raw materials according to a fixed component proportion; step 3, electric arc smelting the copper-aluminum-manganese raw materials after component proportioning to obtain copper-aluminum-manganese alloy ingots; step 4, atomizing the copper-aluminum-manganese alloy ingots to obtain copper-aluminum-manganese alloy powder; step 5, 3D printing and in-situ secondary melting the copper-aluminum-manganese alloy powder, and wire cutting the copper-aluminum-manganese alloy sample after printing; and step 6, stress relief heat treatment of the copper-aluminum-manganese alloy sample to obtain a polycrystalline copper-aluminum-manganese alloy. The application can prepare a polycrystalline copper-aluminum-manganese alloy with excellent super-elasticity without solid solution treatment through component design and laser additive manufacturing method, and the alloy has controllable morphology, small grain size, uniform composition and favorable texture, and has large super-elastic strain and complete reverse phase transition.

The invention discloses a preparation method of single crystal copper for an Nb3Sn superconducting wire, which comprises the following steps of: adding a copper ingot into a graphite boat, starting a heating program to purify the copper ingot, putting the purified copper ingot into a graphite crucible to melt, heating a copper melt and keeping the temperature, clamping a seed crystal on a seed crystal rod, enabling the seed crystal to descend to the liquid level of the copper melt, and cooling to obtain the single crystal copper for the Nb3Sn superconducting wire. And the seed rod is communicated with a water cooling unit and is lifted upwards, and high-purity single crystal copper is obtained after demolding. According to the application, the problems of high loss and insufficient uniformity of the Nb3Sn superconducting wire in the application process of the existing polycrystalline copper are solved.