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Preparation method of millimeter-scale monolayer monocrystalline graphene based on polycrystalline copper foil

A single crystal graphene, millimeter-scale technology, applied in the field of thin film graphene material preparation, can solve the problems of dirty copper foil surface, difficulty in controlling the cleaning degree and cleaning time of copper foil, and affecting the preparation of graphene, etc., to achieve uniform and The effect of uniform growth

Active Publication Date: 2018-08-21
SHAOXING UNIVERSITY
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

This method uses dilute hydrochloric acid to clean the copper foil. The cleaning degree and cleaning time of the copper foil are difficult to control, and after being corroded by dilute hydrochloric acid, the surface of the copper foil becomes dirty, and new impurities are easily introduced, which affects the subsequent preparation of graphene.
[0005] The present invention proposes a new preparation method, which can clean the copper foil surface without complex pretreatment of the copper foil, and at the same time realize millimeter-scale single-layer by controlling the oxygen flow rate and the air pressure of the CVD reaction chamber The growth of single crystal graphene overcomes the problem that copper foil pre-oxidation is difficult to quantify

Method used

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  • Preparation method of millimeter-scale monolayer monocrystalline graphene based on polycrystalline copper foil
  • Preparation method of millimeter-scale monolayer monocrystalline graphene based on polycrystalline copper foil
  • Preparation method of millimeter-scale monolayer monocrystalline graphene based on polycrystalline copper foil

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Embodiment

[0034] Embodiment: a kind of preparation method of millimeter-scale single-layer single-crystal graphene based on polycrystalline copper foil, such as figure 1 - As shown in Figure 4, the specific steps are:

[0035] (1) Pretreatment of copper foil:

[0036] Use Alfa Aesar's #46986 copper foil with a thickness of 0.025mm and a purity of 99.8%. At room temperature, clean the surface of the copper foil with absolute ethanol and dry it with dry nitrogen; cut the copper foil with scissors Form a rectangular diaphragm of 6.0cm*5.5cm, fold it into a closed rectangular box; then load the rectangular box into a high-temperature-resistant quartz tube with an inner diameter of 50mm, and place the quartz tube in the CVD reaction chamber. evacuate the body to an approximate vacuum state below 0.05Pa, and then continuously feed 600sccm argon, 100sccm hydrogen and 0.06sccm oxygen into the CVD reaction chamber until the pressure in the CVD reaction chamber reaches 460Pa, and continue to mai...

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Abstract

The invention discloses a preparation method of millimeter-scale monolayer monocrystalline graphene based on a polycrystalline copper foil and belongs to the technical field of thin film graphene material preparation. The preparation method includes: in an atmosphere with argon, hydrogen and oxygen, heating a copper foil; utilizing methane for catalytic cracking on the surface of the copper foil;growing on the inner wall of a rectangular box to form large-size monolayer monocrystalline graphene. Complex pretreatment of the copper foil is not needed, and the surface of the copper foil can be simply cleaned by only using anhydrous alcohol, so that introduction of new impurities is avoided. Pre-oxidation treatment of the copper foil is not needed, and monocrystalline growth of graphene can be realized by controlling flow of oxygen and pressure intensity in a CVD reaction cavity in the process of preparing graphene. On the premise that optimal oxygen flow parameters are utilized, growth time of monocrystalline graphene is controlled by controlling lasting time of methane to regulate size of monocrystalline graphene.

Description

technical field [0001] The invention belongs to the technical field of preparation of thin-film graphene materials, and in particular relates to a preparation method of millimeter-scale single-layer single-crystal graphene based on polycrystalline copper foil. Background technique [0002] Graphene is carbon atoms through SP 2 A two-dimensional material with a honeycomb structure formed by hybridization. This material has excellent electrical conductivity, heat transfer, light transmission and flexibility properties, so it is widely used in many applications typified by optoelectronic devices. In addition, under the premise of achieving graphene (especially graphene single crystal) bandgap regulation and fast, low-cost preparation, graphene may even replace traditional semiconductor materials such as silicon and germanium, and become the basic material of the next generation of information integration devices. . However, the various excellent properties of graphene can on...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B32/186
CPCC01B32/186C01B2204/02C01B2204/30
Inventor 窦卫东曹巧君施碧云裘剑锋
Owner SHAOXING UNIVERSITY
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