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Preparation method of wafer-level single crystal copper foil and preparation method of structured graphene

A wafer-level, copper foil technology

Active Publication Date: 2021-03-19
SHENZHEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] In view of the above-mentioned deficiencies in the prior art, the object of the present invention is to provide a method for preparing wafer-level single crystal copper foil and a method for preparing structured graphene, aiming to solve how to efficiently Problems in preparing large-area single-crystal copper

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  • Preparation method of wafer-level single crystal copper foil and preparation method of structured graphene
  • Preparation method of wafer-level single crystal copper foil and preparation method of structured graphene
  • Preparation method of wafer-level single crystal copper foil and preparation method of structured graphene

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Embodiment 1

[0065] This embodiment provides a method for rapidly preparing single-crystal copper foil and highly regular graphene from suspended polycrystalline copper foil with notches through high-temperature annealing.

[0066] 1), the preparation method of described Cu(111), comprises the steps:

[0067] Select polycrystalline copper foil with a size of 6cm*3cm and a thickness of 0.08mm.

[0068] Make a cut at the suspended boundary of the polycrystalline copper foil with a depth of 3mm and a width of 20mm.

[0069] Soak the cut polycrystalline copper foil in acetic acid for 10 minutes, rinse thoroughly with deionized water at least three times, and blow dry with a nitrogen gun.

[0070] Select the quartz support, the upper surface of which is a plane with a width of 1.5mm and a length of 15mm, and the height of the support is 25mm; place the folded half of the polycrystalline copper foil on the plane of the quartz support, and hang the other half of the polycrystalline copper foil w...

Embodiment 2

[0080] A method for rapidly preparing single-crystal copper foil and highly regular graphene from suspended polycrystalline copper foil with cutouts through high-temperature annealing.

[0081] 1), taking the Cu(146) preparation method as an example, comprising the following steps:

[0082] Select polycrystalline copper foil with a size of 6cm*3cm and a thickness of 0.08mm.

[0083] Make a cut at the suspended boundary of the polycrystalline copper foil with a depth of 3 mm and a width of 10 mm.

[0084] Soak the cut polycrystalline copper foil in acetic acid for 10 minutes, rinse thoroughly with deionized water at least three times, and blow dry with a nitrogen gun.

[0085] Select the quartz support, the upper surface of which is 1.5mm wide, 15mm long, and the height of the support is 25mm; half of the folded polycrystalline copper foil with a cut is placed flat on the plane of the quartz support to support the copper foil, and the polycrystalline copper with a cut The oth...

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Abstract

The invention discloses a preparation method of a wafer-level single crystal copper foil and a preparation method of structured graphene. The preparation method of the wafer-level single crystal copper foil comprises the steps of carrying out notch treatment on the edge of a polycrystalline copper foil to obtain the polycrystalline copper foil with a notch; and carrying out annealing treatment onthe polycrystalline copper foil with the notch in a hydrogen atmosphere to obtain the single crystal copper foil. The preparation method of the wafer-level single crystal copper foil has the characteristics of simple process, high efficiency, rapidness and energy conservation, and can be used for rapidly preparing single crystal copper with large area, high single crystal degree and high flatness.

Description

technical field [0001] The invention relates to the field of chemistry, in particular to a preparation method of a wafer-level single crystal copper foil and a preparation method of regular graphene. Background technique [0002] The grain boundaries of copper contain a high density of dislocations and point defects, and electron scattering at the grain boundaries significantly degrades the electronic properties. The electrical properties of single crystal copper without grain boundaries are significantly stronger than those of polycrystalline copper. [0003] Conventional methods for preparing crystal-plane (111) single crystal copper foils or copper films are high temperature annealing of polycrystalline copper or deposition of copper films on single crystal inorganic substrates. [0004] Among them, for the copper thin film deposition method, a single crystal inorganic substrate is required as the epitaxial substrate for preparing single crystal metal; in addition, after...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B1/02C30B29/02C01B32/186C01B32/188
CPCC30B1/02C30B29/02C01B32/186C01B32/188
Inventor 李瑛李莉陈智苏陈良田冰冰
Owner SHENZHEN UNIV
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