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Preparation method of wafer-level single crystal copper foil and preparation method of structured graphene
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A wafer-level, copper foil technology
Active Publication Date: 2021-03-19
SHENZHEN UNIV
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[0007] In view of the above-mentioned deficiencies in the prior art, the object of the present invention is to provide a method for preparing wafer-level single crystal copper foil and a method for preparing structured graphene, aiming to solve how to efficiently Problems in preparing large-area single-crystal copper
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Embodiment 1
[0065] This embodiment provides a method for rapidly preparing single-crystal copper foil and highly regular graphene from suspended polycrystalline copper foil with notches through high-temperature annealing.
[0066] 1), the preparation method of described Cu(111), comprises the steps:
[0067] Select polycrystalline copper foil with a size of 6cm*3cm and a thickness of 0.08mm.
[0068] Make a cut at the suspended boundary of the polycrystalline copper foil with a depth of 3mm and a width of 20mm.
[0069] Soak the cut polycrystalline copper foil in acetic acid for 10 minutes, rinse thoroughly with deionized water at least three times, and blow dry with a nitrogen gun.
[0070] Select the quartz support, the upper surface of which is a plane with a width of 1.5mm and a length of 15mm, and the height of the support is 25mm; place the folded half of the polycrystalline copper foil on the plane of the quartz support, and hang the other half of the polycrystalline copper foil w...
Embodiment 2
[0080] A method for rapidly preparing single-crystal copper foil and highly regular graphene from suspended polycrystalline copper foil with cutouts through high-temperature annealing.
[0081] 1), taking the Cu(146) preparation method as an example, comprising the following steps:
[0082] Select polycrystalline copper foil with a size of 6cm*3cm and a thickness of 0.08mm.
[0083] Make a cut at the suspended boundary of the polycrystalline copper foil with a depth of 3 mm and a width of 10 mm.
[0084] Soak the cut polycrystalline copper foil in acetic acid for 10 minutes, rinse thoroughly with deionized water at least three times, and blow dry with a nitrogen gun.
[0085] Select the quartz support, the upper surface of which is 1.5mm wide, 15mm long, and the height of the support is 25mm; half of the folded polycrystalline copper foil with a cut is placed flat on the plane of the quartz support to support the copper foil, and the polycrystalline copper with a cut The oth...
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technical field [0001] The invention relates to the field of chemistry, in particular to a preparation method of a wafer-level single crystal copper foil and a preparation method of regular graphene. Background technique [0002] The grain boundaries of copper contain a high density of dislocations and point defects, and electron scattering at the grain boundaries significantly degrades the electronic properties. The electrical properties of single crystal copper without grain boundaries are significantly stronger than those of polycrystalline copper. [0003] Conventional methods for preparing crystal-plane (111) single crystal copper foils or copper films are high temperature annealing of polycrystalline copper or deposition of copper films on single crystal inorganic substrates. [0004] Among them, for the copper thin film deposition method, a single crystal inorganic substrate is required as the epitaxial substrate for preparing single crystal metal; in addition, after...
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