75 results about "Copper thin film" patented technology

The invention provides a mixed bonding surface planarization process method of a wafer and chemical mechanical polishing equipment. The method comprises the following steps: controlling a grinding head to adsorb a first wafer to be subjected to surface planarization treatment, and grinding the first wafer on a first grinding pad to remove a copper film above a groove of the first wafer so as to obtain a second wafer; controlling the grinding head to move to a second grinding pad, and grinding the second wafer on the second grinding pad so as to remove the dielectric layer of the second wafer, the barrier layer above the dielectric layer and copper with the same thickness as the dielectric layer in the groove, and obtaining a third wafer with an exposed interface layer; controlling the grinding head to move to a third grinding pad, and grinding the third wafer on the third grinding pad, so that the surface height of the interface layer is the same as the surface height of the copper in the groove, and obtaining the wafer with the flattened surface; wherein the hardness of the third polishing pad is smaller than the hardness of the first polishing pad and the hardness of the second polishing pad. According to the invention, the wafer with a flat and smooth surface can be obtained.

The invention provides a phase-change temperature-control flame-retardant current collector and a preparation method and application thereof. The current collector comprises a conductive coating and a temperature-control flame-retardant layer, the conductive coating comprises a first conductive coating and a second conductive coating and is used for loading an active material and packaging the temperature-control flame-retardant layer, and the temperature-control flame-retardant layer is arranged between the first conductive coating and the second conductive coating; the temperature-control flame-retardant layer takes a porous copper film as a matrix, and the porous copper film is filled with a phase-change material and a flame retardant. According to the phase-change temperature-control flame-retardant current collector provided by the invention, the latent heat of the volume ratio is greater than 100J / cm < 3 >, the heat conductivity is greater than 150W / m.K, and the thickness is 10-50 microns, so that the problems of low space utilization rate, low loading capacity and low heat conductivity of a phase-change material in a current temperature-adjusting diaphragm and a temperature-adjusting electrode are well solved. In addition, the battery internal temperature control assembly has the characteristics of simple structure, high integration level and low cost, and the actual application requirement of the battery internal temperature control assembly is well met.

The invention discloses a vibration monitoring simulation system, which comprises a vibration exciter, a rotary workbench fixed on the vibration exciter and a plurality of vibration detection units, and the vibration detection units are arranged on the rotary workbench and comprise an acrylic bottom plate, an acrylic base plate, a plurality of vibration sensors and a plurality of vibration sensors, the first copper thin film layer is attached to the surface of the acrylic bottom plate; the PET film layer is attached to the upper surface of the first copper film layer; the PTFE thin film layer is attached to the upper surface of the PET thin film layer; the second copper thin film layer is attached to the upper surface of the PTFE thin film layer; the acrylic top plate block is arranged on the upper surface of the second copper film layer; and the at least three springs are connected with the acrylic bottom plate and the acrylic top plate block in a manner of mutually equally dividing included angles, one end of each spring is connected with the acrylic bottom plate, and the other end of each spring is connected with the acrylic top plate block.

The invention discloses a low-frequency double-nonlinear quasi-zero-stiffness energy harvesting vibration isolator, and belongs to the technical field of nonlinear vibration control and energy harvesting. Comprising a supporting frame, an upper platform and a lower platform are horizontally installed on the supporting frame, and two vertical optical shafts are symmetrically installed and penetrate through the upper platform and the lower platform; the loading platform is used for bearing a vibration-isolated object and is mounted on the upper platform; the nonlinear negative stiffness structure is a bionic skeleton X-type mechanism arranged between the upper platform and the lower platform and provides negative stiffness restoring force; the non-linear positive stiffness structure is connected with the non-linear negative stiffness structure in parallel and provides restoring force which is non-linearly changed along with displacement; the energy harvesting unit comprises a copper film arranged on the inner side face of the supporting frame and a polytetrafluoroethylene film arranged on the outer side face of the upper platform, and the copper film and the polytetrafluoroethylene film form a friction nanometer generator. The problems that in the prior art, energy harvesting and ultralow-frequency vibration isolation energy harvesting cannot be carried out in a wider working frequency band are solved, and the vibration isolation energy harvesting efficiency can be effectively improved.

The invention belongs to the technical field of preparation of photoelectric catalytic materials, and particularly provides a copper bismuthate / copper oxide conformal morphology heterojunction film and a preparation method thereof.The preparation method comprises the steps that a bismuth oxyiodide film is prepared and placed in a copper source solution, primary deposition is conducted for a certain time, and a pure-phase copper bismuthate film is obtained after sintering; a copper nanocrystal solution is prepared through laser beam irradiation, thiourea molecules are dissolved in the copper nanocrystal solution, and a mixed solution is obtained; spin-coating the mixed solution on the outer surface of a pure-phase copper bismuthate thin film, drying the thin film in a heating stage, placing the thin film in a copper source solution, carrying out secondary deposition for a certain time, and sintering again to obtain a copper oxide second phase attached to the outer surface of the pure-phase copper bismuthate thin film, so as to obtain a copper bismuthate / copper oxide conformal morphology heterojunction thin film; the pure-phase copper bismuthate film and the copper oxide second phase are obtained in sequence through two times of electro-deposition, and the preparation process is simple and easy to regulate and control; and the surface dynamics and the surface carrier extraction efficiency of the prepared thin film are greatly improved.

A surface plasmon resonance sensor system includes a sensor plate having a quartz glass substrate and a copper film sputtered onto the substrate and annealed for about two hours. A quartz prism is attached to a surface of the sensor plate, and a microfluidics unit containing carrier fluid is attached to the opposite surface. A target analyte reservoir is connected through a pump to inject target analytes into the microfluidics unit. A binder is attached to the copper film and binds to target analytes. A laser transmits a beam into the quartz prism at an incident angle that generates surface plasmons resonating with the copper film and reflects a phase shifted laser beam. Receive optics and a charge coupled device convert the phase shifted beam to electrical signals. A computing unit processes the electrical signals to compute refractive index changes based on phase shifts to indicate target analyte detection.

The invention discloses a coating process of a glass packaging substrate and the glass packaging substrate, and the coating process comprises the following steps: selecting a magnetron sputtering instrument, installing a nickel chromium target material and a copper target material, and placing the glass substrate on a plating rack of the magnetron sputtering instrument; sequentially starting a mechanical pump and a molecular pump to vacuumize the vacuum cavity; sequentially carrying out direct-current magnetron sputtering on a nickel chromium bonding layer and a copper film layer on the surface of the glass substrate; and after the processed product is taken out, the vacuum cavity is kept in a vacuum state and is shut down. A direct-current sputtering metallization method is adopted, the nickel chromium bonding layer is sputtered on the glass substrate, then the copper film layer is sputtered on the nickel chromium bonding layer, the bonding strength of the copper film metal layer and the glass substrate can be improved, the surface of the metal layer is smooth, the organization structure is meticulous, and the conductivity is good; and the product quality and reliability of the semiconductor and microelectronic packaging glass substrate are improved.

The invention discloses a three-dimensional force flexible tactile sensor and a preparation method thereof, the three-dimensional force flexible tactile sensor comprises a layered structure, a top electrode layer and a bottom electrode layer, the top electrode layer comprises a second PET substrate and a top copper electrode, the top copper electrode is installed below the second PET substrate, the top copper electrode is a square common electrode, a copper film with the thickness of 0.006 mm is adopted, the side length is 20 mm, and the thickness of the top copper electrode is 20 mm; the top copper electrode is connected with an external lead through a conductive adhesive; the elastic dielectric layer is located below the top electrode layer and is made of an Ecoflex00-30 material, the elastic dielectric layer comprises micro circular truncated cone structures arranged in an array mode, the height of each micro circular truncated cone is 0.9 mm, and the interval between every two micro circular truncated cones is 1 mm; and the bottom electrode layer comprises a first PET substrate and a bottom copper electrode. The sensor has the advantages of high sensitivity, wide temperature range stability, lightness, thinness, easiness in integration and three-dimensional force synchronous decoupling, and is simple in preparation process and low in cost.

This application provides a method for preparing gallium oxide (GaO) with enhanced ultraviolet absorbance and a GaO material prepared according to this method. First, a GaO thin film capable of generating ultraviolet absorption is grown on a substrate by magnetron sputtering. The GaO thin film is then annealed. Next, a copper thin film is grown on the GaO thin film by magnetron sputtering, followed by rapid annealing, causing the copper film to crack into copper nanoparticles under heat. This preparation method utilizes copper nanoparticles to enhance the ultraviolet absorption performance of GaO. The process steps are simple and easy to operate, thus effectively reducing the preparation cost. Furthermore, the GaO material prepared by this method shows a significant improvement in ultraviolet absorbance.

The invention discloses an electrode stripping and positioning transfer method assisted by a metal copper film sacrificial layer. The preparation method comprises the following steps: (1) evaporating a copper film with the thickness of 120nm on a blank silicon substrate; (2) manufacturing an electrode pattern to be transferred on the surface of the silicon / copper substrate; (3) arranging a supporting layer on the silicon / copper / electrode; (4) stripping the copper / electrode / support layer from the surface of the silicon substrate; (5) etching copper to obtain an electrode / support layer; (6) transferring the electrode / support layer to the target substrate and tightly attaching the electrode / support layer to the target substrate; and (7) removing the supporting layer from the target substrate. The preparation method is simple, short in time and high in success rate. The prepared electrode can be used for transferring various target substrates and materials, the problem of electrode preparation of organic solvent sensitive materials is solved, and the device performance is better.

The invention discloses an aluminum-silicon-copper-zinc coated steel plate with antibacterial performance and a manufacturing method thereof, and belongs to the field of hot dipping. The method comprises the following steps: (a) carrying out alkali washing, electrolytic degreasing, continuous annealing, hot dipping, air knife purging and cooling after plating on a cold-rolled substrate to form an aluminum-silicon coating steel plate; (b) depositing a copper film and a zinc film on the surface of the aluminum-silicon coated steel plate by using a magnetron sputtering coating technology to obtain an aluminum-silicon coated steel plate with the copper film and the zinc film; and (c) heating the aluminum-silicon coating steel plate with the copper film and the zinc film in a vacuum heating furnace, so that the coating and the surface film are fully diffused, and the aluminum-silicon-copper-zinc coating steel plate with the antibacterial property is prepared. According to the preparation method, a Cu system and a Zn system are jointly used as main antibacterial substances, and by means of a high-temperature diffusion mechanism, a deposition and diffusion two-step method is carried out on an aluminum-silicon coating steel plate, so that the composite coating is prepared.

The utility model relates to the technical field of electric heating films, and discloses a high-temperature-resistant electric heating film which comprises a planar heating body, current capacitance absorption layers are fixedly arranged on the upper end face and the lower end face of the planar heating body respectively, and protective layer mechanisms are fixedly arranged on the end faces of the opposite sides of the two current capacitance absorption layers respectively. The two protection layer mechanisms comprise two wear-resistant layers, two polyester film layers, two carbon fiber layers and two copper film layers, the two current capacitance absorption layers comprise two absorption layer bodies and four connecting pieces, and edge strips are fixedly arranged at the positions, close to the front sides and the rear sides, of the upper end faces and the lower end faces of the two absorption layer bodies. According to the electric heating film, the protective layer mechanism is composed of the wear-resistant layer, the polyester film layer, the carbon fiber layer and the copper film layer, the wear resistance of the surface of the protective layer is improved through the wear-resistant layer, and the polyester film layer, the carbon fiber layer and the copper film layer are matched, so that the electric heating film is higher in high temperature resistance and longer in service life.

The invention provides a copper seed layer and a preparation method and application thereof, and relates to the technical field of semiconductor packaging, and according to the preparation method provided by the invention, deposition of a copper film is carried out by adopting a three-step method during deposition. The method comprises the following steps of: 1, depositing a high-hydrogen-content copper film layer on the surface of a glass substrate as a bottommost layer to reduce the damage to the surface of a sample and improve the compactness of the film; the second step is a normal copper film layer, and the deposition rate of the copper film is increased; and the third step is hydrogen glow modification for removing weak bonds on the surface of the thin film and amidino substances which are not completely reacted with the copper precursor, so that the compactness of the outer copper thin film is improved, and a good seed layer thin film is provided for subsequent copper electroplating.

Disclosed in the present invention is a laser-induced forward transfer method for forming a highly-conductive metal structure, comprising the following steps: A, preparing a metal transfer film and a receptor substrate; B, applying transfer laser to the metal transfer film, and depositing at the top of the receptor substrate to form an intermediate structure; and C, heating the intermediate structure to 800℃ or above, and cooling same to obtain a metal transfer structure, the metal transfer film comprising a transparent substrate and a transfer metal layer which are attached to each other, the transfer metal layer comprising copper and silver, the silver content of the transfer metal layer being 5-95%, the transfer metal layer at least comprising two transfer films, the transfer film in contact with the inner surface of the transparent substrate being a copper film or a copper alloy film, and the copper content of the copper alloy film being ≥70%. The present solution provides the transfer method which additionally provides a thermal annealing step in the transfer method and optimizes the layer structure of the transfer metal layer used for metal transfer, thus helping to obtain metal transfer structures having low porosity and low resistivity.

The invention discloses a graphene-copper co-deposition device, which comprises a metal deposition unit, a copper deposition unit, a copper deposition unit and a copper deposition unit, the graphene deposition unit is used for realizing graphene growth and deposition; and a sample transfer unit; wherein the metal deposition unit and the graphene deposition unit are located in the same deposition chamber, the sample transmission unit is used for realizing controllable transmission of a sample between the sample introduction chamber and the deposition chamber, and the graphene-copper co-deposition device can realize independent deposition and co-deposition of graphene and copper. According to the graphene-copper co-deposition device provided by the invention, a prepared copper film material has ultrahigh graphene content and improved conductivity, the conductivity even reaches up to 110% IACS (International Annealed Copper Standard), the copper film material has relatively high fusing current, and the device remarkably improves the conductivity of a copper film.

The present disclosure relates to a copper film with nano-pores on the surface, a preparation method and application thereof, which comprises the following steps: S1, connecting a copper film to be treated to a first electrode of a pulse power supply and placing it in an electrolyte containing Cu 2+ ; the electrolyte has a polar plate connected to a second electrode of the pulse power supply, and the second electrode is opposite in polarity to the first electrode; S2, controlling the pulse power supply to alternately output a forward pulse current and a reverse pulse current to obtain the copper film with nano-pores on the surface. The above method can be directly performed on a sample to be treated for use, without the need for growth control or performance on a substrate with nano-structures, and has low process cost and short preparation time. The prepared copper film can be applied in the fields of flexible printed circuits, lithium ion battery current collectors, solar cells, etc.

The invention relates to a flexible constantan thin film thermoelectric device with high power density and a preparation method and application thereof, the flexible constantan thin film device is formed by connecting a plurality of n-type constantan thin film supporting legs in series through copper wires, and the n-type constantan thin film supporting legs are composed of Cu55Ni42Mn3. Compared with the prior art, the preparation of the flexible thermoelectric thin film device utilizes the constantan metal bond connection characteristic, the constantan thin film material with the micron-order thickness is obtained through the rolling technology, the texture orientation with the optimal elastic modulus and the high dislocation density are achieved, the flexible thermoelectric thin film device has the excellent flexibility and elasticity, the preparation technology is simple, and the preparation cost is low. The assembled 10-leg flexible thermoelectric thin film device is far superior to a currently reported flexible thermoelectric device in the aspects of power density and bending flexibility. The metal film thermoelectric device overcomes the inherent rigidity of an inorganic thermoelectric material, has the characteristic of high power factor of constantan, and shows that the metal material has potential in the aspect of application of the flexible thermoelectric device.

The invention provides a method for adjusting the steady-state pipe diameter of a self-crimping inductor. The method comprises the steps of cleaning a substrate slice, depositing a germanium sacrificial layer, depositing a dual-frequency silicon nitride stress layer and depositing an aluminum oxide protection layer. The first photoetching and the reactive ion etching define a mesa structure, the second photoetching forms a metal conductive layer, and the third photoetching and the reactive ion etching define an etching window. In the step of forming the metal conducting layer through secondary photoetching, HMDS and negative photoresist are spin-coated on the surface of the high-frequency silicon nitride stress layer of the unit substrate, and overlay alignment, exposure and development are carried out by using a second mask plate designed with a width continuous or quasi-continuous progressive increase type plane pattern, namely a hollow pattern. Then, depositing a layer of copper film on the surface of the whole substrate by adopting electron beam evaporation equipment to form a metal conductive layer; and finally, stripping operation is carried out by utilizing photoresist removing liquid, and the region with the negative photoresist and the copper film covering the region are removed, so that a firmly attached copper conductive layer pattern with a specific cross section shape is formed in the region without the photoresist.

The invention discloses a preparation method of a cuprous iodide transparent film, which comprises the following steps: taking a silicon and ITO (Indium Tin Oxide) conductive film as a substrate, and obtaining a copper film on the surface of the substrate by a magnetron sputtering method; then spin-coating a polymethyl methacrylate (PMMA) film on the surface; and after iodination, the PMMA film is dissolved with acetone to remove the PMMA film, and the CuI film is obtained. The amount of iodine reacting with copper is blocked by spin-coating the film on the copper surface, the reaction rate is reduced, and the film quality is improved. The CuI film prepared by the invention has the advantages of continuity, compactness, high surface brightness and weak light diffusion. The method is simple and low in cost, and industrial production can be realized.

The invention discloses a preparation method of a copper single crystal wafer, the copper single crystal wafer prepared by the method and application of the copper single crystal wafer. The preparation method of the copper single crystal wafer comprises the following steps: performing oxygen plasma pretreatment on the surface of a sapphire single crystal wafer of which the crystal face orientation is a c face; depositing a copper film on the surface of the pretreated sapphire single crystal wafer; and annealing the copper thin film. According to the preparation method, the surface of the sapphire single crystal wafer with the crystal face orientation being the c face is pretreated through the oxygen plasma, hydroxyl termination of the sapphire surface is changed into oxygen termination, and therefore the dominant orientation of sputtering copper crystal grains is changed into OR-2 from OR-1; in the high-temperature annealing recrystallization process, OR-1 crystal grains with extremely low density begin to form and rapidly swallow OR-2 crystal grains around, and finally a large-size twin-crystal-free OR-1 oriented Cu (111) single crystal wafer is formed. The preparation method provided by the invention has good repeatability and amplification performance, and can realize batch preparation of Cu (111) single crystal wafers of 4-8 inches and epitaxial growth of high-quality graphene single crystal wafers.

The invention discloses a preparation method of an HJT photovoltaic cell electro-coppering electrode seed layer, which adopts a CuNi target as a sputtering target material, introduces metallic nickel and controls the proportion of nickel, creatively adopts a novel CuNi seed layer film as a heterojunction cell electro-coppering seed layer, the CuNi seed layer film has good conductivity, and can be used for preparing an electro-coppering electrode seed layer. The CuNi seed layer film and the TCO film have good bonding strength, are easy to etch, do not have a corrosion expansion phenomenon, are matched with the etching rate of a copper film, have good acid resistance, have good matching degree with a copper electroplating solution, have good contact characteristics with the TCO film on the bottom layer in the electroplating solution, and are low in contact resistance; and the photoelectric conversion efficiency of the heterojunction solar cell can be effectively improved.

The invention provides a method for adjusting a curling gap of a self-curling inductor. The method comprises the steps of cleaning a substrate slice, depositing a germanium sacrificial layer, depositing a dual-frequency silicon nitride stress layer and depositing an aluminum oxide protection layer. The first photoetching and the reactive ion etching define a mesa structure, the second photoetching forms a metal conductive layer, and the third photoetching and the reactive ion etching define an etching window. In the step of forming the metal conducting layer through secondary photoetching, HMDS and negative photoresist are spin-coated on the surface of the high-frequency silicon nitride stress layer of the unit substrate, and overlay alignment, exposure and development are carried out by using a second mask plate which is provided with a locally widened plane pattern, namely a hollow pattern, designed at a predetermined front half part contact position. And then, depositing a layer of copper film on the surface of the whole substrate by adopting electron beam evaporation equipment to form a metal conductive layer. According to the invention, the curling gap can be independently or flexibly adjusted, and the limitation that the stress is changed only by changing all materials or the curling gap is controlled through the thickness in the prior art is broken through.

The present invention relates to a single-crystal copper thin film and a single-crystal copper thin film semiconductor, which utilize a phenomenon in which holes, rather than electrons, become carriers when a grain boundary (GB) is removed from a copper thin film having a thickness of 200 nm or less. More specifically, the present invention relates to a copper thin film and a single-crystal copper thin film semiconductor, of which electrical properties change to resemble those of a p-type semiconductor under certain conditions. In the single-crystal thin film having a suppressed grain boundary, according to the present invention, a single-crystal copper thin film having a nonlinear hole effect and a hole carrier dominant transport phenomenon includes a single-crystal copper thin film having a thickness of 200 nm or less, wherein the grain boundary is suppressed.

To provide a coil or the like capable of improving efficiency as wireless power transmission even when a high frequency current is used.SOLUTION: A transmission coil TC1 for non-contact power transmission includes a power transmission loop coil TL11 wound from the outer peripheral side to the inner peripheral side of the power transmission loop coil TC1, and a power transmission loop coil TL12 wound from the inner circumference side to the outer circumference side, and the overall shape of the power transmission loop coil TL11 and the power transmission loop coil TL12 in a plan view is the same quadrangle as each other. The position seen from the center of a copper thin film wire TL111 and a copper thin film wire TL112 constituting the power transmission loop coil TL11 and the position seen from the center of the copper thin film wire TL121 and the copper thin film wire TL122 constituting the power transmission loop coil TL12 match in a plan view.SELECTED DRAWING: Figure 4

The present invention relates to a composite hole transport layer and its application in perovskite solar cells, wherein the composite hole transport layer is obtained by compounding 2,9,16,23-tetra-tert-butylphthalocyanine copper (II) film and MeO-2PACz film, wherein the surface of the MeO-2PACz film is in contact with the perovskite film. The present invention uses 2,9,16,23-tetra-tert-butylphthalocyanine copper (II) film and MeO-2PACz film as a hole transport layer to increase the transmittance of light, effectively improve the photocurrent of the battery, and optimize the interface with the perovskite film, improve the compactness and grain size of the perovskite film, so that the efficiency of the perovskite solar cell is significantly improved, and the thermal stability and light stability of the perovskite solar cell are also significantly improved. After 500 hours of 85°C thermal stability test or one sunlight light stability test, the battery can still maintain more than 90% of the initial efficiency.

The invention discloses a T-shaped coaxial thermocouple preparation method and a T-shaped coaxial thermocouple, and the method comprises the steps: S1, enabling a constantan wire to be immersed in and pulled out of an insulating slurry for many times, so as to enable the insulating slurry to be uniformly attached to the surface of the constantan wire; s2, obtaining an insulating layer on the surface of the constantan wire through a preset curing mode; s3, depositing a copper film layer on the insulating layer; s4, a constantan wire is welded to the lower end face of the constantan wire, and electric conduction is formed between the copper wire and the copper thin film in a conductive adhesive bonding mode; and S5, removing the insulating layer formed on the upper end surface of the constantan wire, and coating the outer diameter edge of the constantan wire with a conductive adhesive to enable the constantan wire to be electrically conducted with the copper film, thereby obtaining the T-shaped coaxial thermocouple. According to the preparation method of the T-shaped coaxial thermocouple and the T-shaped coaxial thermocouple provided by the invention, a high transient heat flow sensor which can be used for a shock tunnel heat measurement test is realized by utilizing a relatively low-cost thermocouple material and a mature process, and the consistency and the accuracy of a heat measurement result of the sensor are improved.

The invention provides a trenchless pushing stress detection device and method, which are applied to the technical field of pipe-jacking pushing force measurement devices, and the key points of the technical scheme are that the device comprises a reaction wall and a pipe end thick plate; uniformly distributed cylinder barrels are arranged at one end of the reaction wall, piston rods are slidably connected to the inner walls of the cylinder barrels, jacking front ends are fixedly connected to one ends of the piston rods, and first lock catches are arranged at one ends of outer rings of the jacking front ends; compared with the prior art, the device has the technical effects that the pressure detection assembly utilizes the cooperative deformation of the flexible support plate and the liquid crystal fluid, and combines the optical signal reflection principle of a window, so that the visual and real-time monitoring of the jacking force distribution is realized, and the problem that the response of a traditional detection device to a complex stress state is lagged is solved; the power generation assembly adopts a friction electrification structure of a copper film and a polytetrafluoroethylene film, and can continuously supply power to a storage battery and a super capacitor without an external power supply, so that the stability and environmental adaptability of the device in long-term operation are ensured.

The present invention relates to the technical field of cuprous oxide film preparation, and in particular to a method for improving the grain size of cuprous oxide films and its application. The method comprises placing a cleaned quartz glass sheet into the coating chamber of a magnetron sputtering apparatus, evacuating the chamber, and heating the quartz glass sheet to a set temperature; introducing a flow protective atmosphere into the chamber, and using a DC power supply and a high-purity silver target to sputter a silver thin film buffer layer on the quartz glass sheet, so that a buffer layer silver film is obtained on the quartz glass sheet; then using a high-purity copper target to sputter a cuprous oxide film on the silver film: introducing oxygen to start sputtering; after completion, the gas is discharged, the chamber is opened, and the obtained product is taken out. The method proposed by the present invention uses magnetron sputtering coating technology to prepare a buffer layer silver film on a substrate, which can improve the crystallinity of the cuprous oxide film, reduce defects, and significantly improve the grain size of the cuprous oxide film. In addition, the method of the present invention can reduce the preparation cost of large-grain cuprous oxide films.

The present disclosure relates to a rechargeable battery module, a method of manufacturing the same, and a system therefor. The rechargeable battery module may include: a plurality of battery cells stacked in a first direction; a bus bar holder configured to at least partially cover the plurality of battery cells while exposing electrode terminals of the plurality of battery cells upward; a bus bar connecting the electrode terminals of the plurality of battery cells exposed by a bus bar support portion of the bus bar holder; a flexible printed circuit (FPC) forming an exposure hole in a vertical direction perpendicular to the first direction, the flexible printed circuit being disposed on and electrically connected to the bus bar to expose a copper thin film portion of the flexible printed circuit in a direction toward the bus bar; and a metal tab inserted inside the flexible printed circuit, the metal tab being electrically connected to a surface of the copper thin film portion and being exposed outward through the exposure hole.

The invention discloses a simulation method for preparing an aluminum-tin-copper film through magnetron sputtering and a related device, and relates to the technical field of analogue simulation, the method comprises the following steps: simulating a process of bombarding an aluminum-tin-copper alloy target material by argon ions according to a preset energy range of the argon ions to obtain sputtering atom data; based on the sputtering atom data, simulating the process of moving aluminum atoms, tin atoms and copper atoms from a target surface to a matrix by utilizing a constructed target three-dimensional model of magnetron sputtering equipment to obtain data of the atoms reaching the matrix; preprocessing the copper substrate in the constructed simulation box to obtain a target molecular dynamics simulation system; and determining deposition parameters according to the atom arrival matrix data, and performing aluminum-tin-copper film deposition process simulation and relaxation treatment on the target molecular dynamics simulation system based on the deposition parameters to obtain a microstructure model of the aluminum-tin-copper film. The simulation method is provided for process development and optimization of magnetron sputtering preparation of the high-performance aluminum-tin-copper thin film.