53 results about "Copper thin film" patented technology

The invention discloses a low-frequency double-nonlinear quasi-zero-stiffness energy harvesting vibration isolator, and belongs to the technical field of nonlinear vibration control and energy harvesting. Comprising a supporting frame, an upper platform and a lower platform are horizontally installed on the supporting frame, and two vertical optical shafts are symmetrically installed and penetrate through the upper platform and the lower platform; the loading platform is used for bearing a vibration-isolated object and is mounted on the upper platform; the nonlinear negative stiffness structure is a bionic skeleton X-type mechanism arranged between the upper platform and the lower platform and provides negative stiffness restoring force; the non-linear positive stiffness structure is connected with the non-linear negative stiffness structure in parallel and provides restoring force which is non-linearly changed along with displacement; the energy harvesting unit comprises a copper film arranged on the inner side face of the supporting frame and a polytetrafluoroethylene film arranged on the outer side face of the upper platform, and the copper film and the polytetrafluoroethylene film form a friction nanometer generator. The problems that in the prior art, energy harvesting and ultralow-frequency vibration isolation energy harvesting cannot be carried out in a wider working frequency band are solved, and the vibration isolation energy harvesting efficiency can be effectively improved.

A surface plasmon resonance sensor system includes a sensor plate having a quartz glass substrate and a copper film sputtered onto the substrate and annealed for about two hours. A quartz prism is attached to a surface of the sensor plate, and a microfluidics unit containing carrier fluid is attached to the opposite surface. A target analyte reservoir is connected through a pump to inject target analytes into the microfluidics unit. A binder is attached to the copper film and binds to target analytes. A laser transmits a beam into the quartz prism at an incident angle that generates surface plasmons resonating with the copper film and reflects a phase shifted laser beam. Receive optics and a charge coupled device convert the phase shifted beam to electrical signals. A computing unit processes the electrical signals to compute refractive index changes based on phase shifts to indicate target analyte detection.

The invention discloses a coating process of a glass packaging substrate and the glass packaging substrate, and the coating process comprises the following steps: selecting a magnetron sputtering instrument, installing a nickel chromium target material and a copper target material, and placing the glass substrate on a plating rack of the magnetron sputtering instrument; sequentially starting a mechanical pump and a molecular pump to vacuumize the vacuum cavity; sequentially carrying out direct-current magnetron sputtering on a nickel chromium bonding layer and a copper film layer on the surface of the glass substrate; and after the processed product is taken out, the vacuum cavity is kept in a vacuum state and is shut down. A direct-current sputtering metallization method is adopted, the nickel chromium bonding layer is sputtered on the glass substrate, then the copper film layer is sputtered on the nickel chromium bonding layer, the bonding strength of the copper film metal layer and the glass substrate can be improved, the surface of the metal layer is smooth, the organization structure is meticulous, and the conductivity is good; and the product quality and reliability of the semiconductor and microelectronic packaging glass substrate are improved.

The invention discloses a three-dimensional force flexible tactile sensor and a preparation method thereof, the three-dimensional force flexible tactile sensor comprises a layered structure, a top electrode layer and a bottom electrode layer, the top electrode layer comprises a second PET substrate and a top copper electrode, the top copper electrode is installed below the second PET substrate, the top copper electrode is a square common electrode, a copper film with the thickness of 0.006 mm is adopted, the side length is 20 mm, and the thickness of the top copper electrode is 20 mm; the top copper electrode is connected with an external lead through a conductive adhesive; the elastic dielectric layer is located below the top electrode layer and is made of an Ecoflex00-30 material, the elastic dielectric layer comprises micro circular truncated cone structures arranged in an array mode, the height of each micro circular truncated cone is 0.9 mm, and the interval between every two micro circular truncated cones is 1 mm; and the bottom electrode layer comprises a first PET substrate and a bottom copper electrode. The sensor has the advantages of high sensitivity, wide temperature range stability, lightness, thinness, easiness in integration and three-dimensional force synchronous decoupling, and is simple in preparation process and low in cost.

This application provides a method for preparing gallium oxide (GaO) with enhanced ultraviolet absorbance and a GaO material prepared according to this method. First, a GaO thin film capable of generating ultraviolet absorption is grown on a substrate by magnetron sputtering. The GaO thin film is then annealed. Next, a copper thin film is grown on the GaO thin film by magnetron sputtering, followed by rapid annealing, causing the copper film to crack into copper nanoparticles under heat. This preparation method utilizes copper nanoparticles to enhance the ultraviolet absorption performance of GaO. The process steps are simple and easy to operate, thus effectively reducing the preparation cost. Furthermore, the GaO material prepared by this method shows a significant improvement in ultraviolet absorbance.

The invention discloses an electrode stripping and positioning transfer method assisted by a metal copper film sacrificial layer. The preparation method comprises the following steps: (1) evaporating a copper film with the thickness of 120nm on a blank silicon substrate; (2) manufacturing an electrode pattern to be transferred on the surface of the silicon / copper substrate; (3) arranging a supporting layer on the silicon / copper / electrode; (4) stripping the copper / electrode / support layer from the surface of the silicon substrate; (5) etching copper to obtain an electrode / support layer; (6) transferring the electrode / support layer to the target substrate and tightly attaching the electrode / support layer to the target substrate; and (7) removing the supporting layer from the target substrate. The preparation method is simple, short in time and high in success rate. The prepared electrode can be used for transferring various target substrates and materials, the problem of electrode preparation of organic solvent sensitive materials is solved, and the device performance is better.

The invention discloses an aluminum-silicon-copper-zinc coated steel plate with antibacterial performance and a manufacturing method thereof, and belongs to the field of hot dipping. The method comprises the following steps: (a) carrying out alkali washing, electrolytic degreasing, continuous annealing, hot dipping, air knife purging and cooling after plating on a cold-rolled substrate to form an aluminum-silicon coating steel plate; (b) depositing a copper film and a zinc film on the surface of the aluminum-silicon coated steel plate by using a magnetron sputtering coating technology to obtain an aluminum-silicon coated steel plate with the copper film and the zinc film; and (c) heating the aluminum-silicon coating steel plate with the copper film and the zinc film in a vacuum heating furnace, so that the coating and the surface film are fully diffused, and the aluminum-silicon-copper-zinc coating steel plate with the antibacterial property is prepared. According to the preparation method, a Cu system and a Zn system are jointly used as main antibacterial substances, and by means of a high-temperature diffusion mechanism, a deposition and diffusion two-step method is carried out on an aluminum-silicon coating steel plate, so that the composite coating is prepared.

The utility model relates to the technical field of electric heating films, and discloses a high-temperature-resistant electric heating film which comprises a planar heating body, current capacitance absorption layers are fixedly arranged on the upper end face and the lower end face of the planar heating body respectively, and protective layer mechanisms are fixedly arranged on the end faces of the opposite sides of the two current capacitance absorption layers respectively. The two protection layer mechanisms comprise two wear-resistant layers, two polyester film layers, two carbon fiber layers and two copper film layers, the two current capacitance absorption layers comprise two absorption layer bodies and four connecting pieces, and edge strips are fixedly arranged at the positions, close to the front sides and the rear sides, of the upper end faces and the lower end faces of the two absorption layer bodies. According to the electric heating film, the protective layer mechanism is composed of the wear-resistant layer, the polyester film layer, the carbon fiber layer and the copper film layer, the wear resistance of the surface of the protective layer is improved through the wear-resistant layer, and the polyester film layer, the carbon fiber layer and the copper film layer are matched, so that the electric heating film is higher in high temperature resistance and longer in service life.

The invention provides a copper seed layer and a preparation method and application thereof, and relates to the technical field of semiconductor packaging, and according to the preparation method provided by the invention, deposition of a copper film is carried out by adopting a three-step method during deposition. The method comprises the following steps of: 1, depositing a high-hydrogen-content copper film layer on the surface of a glass substrate as a bottommost layer to reduce the damage to the surface of a sample and improve the compactness of the film; the second step is a normal copper film layer, and the deposition rate of the copper film is increased; and the third step is hydrogen glow modification for removing weak bonds on the surface of the thin film and amidino substances which are not completely reacted with the copper precursor, so that the compactness of the outer copper thin film is improved, and a good seed layer thin film is provided for subsequent copper electroplating.

The invention discloses a graphene-copper co-deposition device, which comprises a metal deposition unit, a copper deposition unit, a copper deposition unit and a copper deposition unit, the graphene deposition unit is used for realizing graphene growth and deposition; and a sample transfer unit; wherein the metal deposition unit and the graphene deposition unit are located in the same deposition chamber, the sample transmission unit is used for realizing controllable transmission of a sample between the sample introduction chamber and the deposition chamber, and the graphene-copper co-deposition device can realize independent deposition and co-deposition of graphene and copper. According to the graphene-copper co-deposition device provided by the invention, a prepared copper film material has ultrahigh graphene content and improved conductivity, the conductivity even reaches up to 110% IACS (International Annealed Copper Standard), the copper film material has relatively high fusing current, and the device remarkably improves the conductivity of a copper film.

The invention provides a method for adjusting the steady-state pipe diameter of a self-crimping inductor. The method comprises the steps of cleaning a substrate slice, depositing a germanium sacrificial layer, depositing a dual-frequency silicon nitride stress layer and depositing an aluminum oxide protection layer. The first photoetching and the reactive ion etching define a mesa structure, the second photoetching forms a metal conductive layer, and the third photoetching and the reactive ion etching define an etching window. In the step of forming the metal conducting layer through secondary photoetching, HMDS and negative photoresist are spin-coated on the surface of the high-frequency silicon nitride stress layer of the unit substrate, and overlay alignment, exposure and development are carried out by using a second mask plate designed with a width continuous or quasi-continuous progressive increase type plane pattern, namely a hollow pattern. Then, depositing a layer of copper film on the surface of the whole substrate by adopting electron beam evaporation equipment to form a metal conductive layer; and finally, stripping operation is carried out by utilizing photoresist removing liquid, and the region with the negative photoresist and the copper film covering the region are removed, so that a firmly attached copper conductive layer pattern with a specific cross section shape is formed in the region without the photoresist.

The invention discloses a preparation method of a cuprous iodide transparent film, which comprises the following steps: taking a silicon and ITO (Indium Tin Oxide) conductive film as a substrate, and obtaining a copper film on the surface of the substrate by a magnetron sputtering method; then spin-coating a polymethyl methacrylate (PMMA) film on the surface; and after iodination, the PMMA film is dissolved with acetone to remove the PMMA film, and the CuI film is obtained. The amount of iodine reacting with copper is blocked by spin-coating the film on the copper surface, the reaction rate is reduced, and the film quality is improved. The CuI film prepared by the invention has the advantages of continuity, compactness, high surface brightness and weak light diffusion. The method is simple and low in cost, and industrial production can be realized.

The invention discloses a preparation method of a copper single crystal wafer, the copper single crystal wafer prepared by the method and application of the copper single crystal wafer. The preparation method of the copper single crystal wafer comprises the following steps: performing oxygen plasma pretreatment on the surface of a sapphire single crystal wafer of which the crystal face orientation is a c face; depositing a copper film on the surface of the pretreated sapphire single crystal wafer; and annealing the copper thin film. According to the preparation method, the surface of the sapphire single crystal wafer with the crystal face orientation being the c face is pretreated through the oxygen plasma, hydroxyl termination of the sapphire surface is changed into oxygen termination, and therefore the dominant orientation of sputtering copper crystal grains is changed into OR-2 from OR-1; in the high-temperature annealing recrystallization process, OR-1 crystal grains with extremely low density begin to form and rapidly swallow OR-2 crystal grains around, and finally a large-size twin-crystal-free OR-1 oriented Cu (111) single crystal wafer is formed. The preparation method provided by the invention has good repeatability and amplification performance, and can realize batch preparation of Cu (111) single crystal wafers of 4-8 inches and epitaxial growth of high-quality graphene single crystal wafers.

The invention provides a method for adjusting a curling gap of a self-curling inductor. The method comprises the steps of cleaning a substrate slice, depositing a germanium sacrificial layer, depositing a dual-frequency silicon nitride stress layer and depositing an aluminum oxide protection layer. The first photoetching and the reactive ion etching define a mesa structure, the second photoetching forms a metal conductive layer, and the third photoetching and the reactive ion etching define an etching window. In the step of forming the metal conducting layer through secondary photoetching, HMDS and negative photoresist are spin-coated on the surface of the high-frequency silicon nitride stress layer of the unit substrate, and overlay alignment, exposure and development are carried out by using a second mask plate which is provided with a locally widened plane pattern, namely a hollow pattern, designed at a predetermined front half part contact position. And then, depositing a layer of copper film on the surface of the whole substrate by adopting electron beam evaporation equipment to form a metal conductive layer. According to the invention, the curling gap can be independently or flexibly adjusted, and the limitation that the stress is changed only by changing all materials or the curling gap is controlled through the thickness in the prior art is broken through.

The invention discloses a T-shaped coaxial thermocouple preparation method and a T-shaped coaxial thermocouple, and the method comprises the steps: S1, enabling a constantan wire to be immersed in and pulled out of an insulating slurry for many times, so as to enable the insulating slurry to be uniformly attached to the surface of the constantan wire; s2, obtaining an insulating layer on the surface of the constantan wire through a preset curing mode; s3, depositing a copper film layer on the insulating layer; s4, a constantan wire is welded to the lower end face of the constantan wire, and electric conduction is formed between the copper wire and the copper thin film in a conductive adhesive bonding mode; and S5, removing the insulating layer formed on the upper end surface of the constantan wire, and coating the outer diameter edge of the constantan wire with a conductive adhesive to enable the constantan wire to be electrically conducted with the copper film, thereby obtaining the T-shaped coaxial thermocouple. According to the preparation method of the T-shaped coaxial thermocouple and the T-shaped coaxial thermocouple provided by the invention, a high transient heat flow sensor which can be used for a shock tunnel heat measurement test is realized by utilizing a relatively low-cost thermocouple material and a mature process, and the consistency and the accuracy of a heat measurement result of the sensor are improved.

The invention provides a trenchless pushing stress detection device and method, which are applied to the technical field of pipe-jacking pushing force measurement devices, and the key points of the technical scheme are that the device comprises a reaction wall and a pipe end thick plate; uniformly distributed cylinder barrels are arranged at one end of the reaction wall, piston rods are slidably connected to the inner walls of the cylinder barrels, jacking front ends are fixedly connected to one ends of the piston rods, and first lock catches are arranged at one ends of outer rings of the jacking front ends; compared with the prior art, the device has the technical effects that the pressure detection assembly utilizes the cooperative deformation of the flexible support plate and the liquid crystal fluid, and combines the optical signal reflection principle of a window, so that the visual and real-time monitoring of the jacking force distribution is realized, and the problem that the response of a traditional detection device to a complex stress state is lagged is solved; the power generation assembly adopts a friction electrification structure of a copper film and a polytetrafluoroethylene film, and can continuously supply power to a storage battery and a super capacitor without an external power supply, so that the stability and environmental adaptability of the device in long-term operation are ensured.

The present invention relates to the technical field of cuprous oxide film preparation, and in particular to a method for improving the grain size of cuprous oxide films and its application. The method comprises placing a cleaned quartz glass sheet into the coating chamber of a magnetron sputtering apparatus, evacuating the chamber, and heating the quartz glass sheet to a set temperature; introducing a flow protective atmosphere into the chamber, and using a DC power supply and a high-purity silver target to sputter a silver thin film buffer layer on the quartz glass sheet, so that a buffer layer silver film is obtained on the quartz glass sheet; then using a high-purity copper target to sputter a cuprous oxide film on the silver film: introducing oxygen to start sputtering; after completion, the gas is discharged, the chamber is opened, and the obtained product is taken out. The method proposed by the present invention uses magnetron sputtering coating technology to prepare a buffer layer silver film on a substrate, which can improve the crystallinity of the cuprous oxide film, reduce defects, and significantly improve the grain size of the cuprous oxide film. In addition, the method of the present invention can reduce the preparation cost of large-grain cuprous oxide films.

The invention discloses a simulation method for preparing an aluminum-tin-copper film through magnetron sputtering and a related device, and relates to the technical field of analogue simulation, the method comprises the following steps: simulating a process of bombarding an aluminum-tin-copper alloy target material by argon ions according to a preset energy range of the argon ions to obtain sputtering atom data; based on the sputtering atom data, simulating the process of moving aluminum atoms, tin atoms and copper atoms from a target surface to a matrix by utilizing a constructed target three-dimensional model of magnetron sputtering equipment to obtain data of the atoms reaching the matrix; preprocessing the copper substrate in the constructed simulation box to obtain a target molecular dynamics simulation system; and determining deposition parameters according to the atom arrival matrix data, and performing aluminum-tin-copper film deposition process simulation and relaxation treatment on the target molecular dynamics simulation system based on the deposition parameters to obtain a microstructure model of the aluminum-tin-copper film. The simulation method is provided for process development and optimization of magnetron sputtering preparation of the high-performance aluminum-tin-copper thin film.

The invention provides a preparation method of a memristor based on nanometer laser direct writing, and relates to the technical field of memristor preparation. An adhesion layer and a copper film are deposited on a high-resistance silicon substrate by adopting a direct current magnetron sputtering method; forming an electrode pattern on the copper film through a photoetching process; constructing a metal-oxide-metal bridging structure in an unetched region between the electrode patterns by adopting a nano laser direct writing technology; and performing electroforming processing on the device after laser processing, and activating the memristive behavior.

The invention relates to the technical field of vacuum coating deposition and metal material surface treatment, and discloses a magnetron sputtering deposition preparation method and application of a turbine rotor blade surface quasi wall surface shear force sensor. According to the method, an insulating layer is sprayed or deposited on the surface of the turbine rotor blade to achieve the electrical isolation effect, and then cleaning, ion beam bombardment and vacuum drying are sequentially conducted to activate a deposition interface; the method comprises the following steps: designing and assembling a flexible mask based on blade curved surface morphology data, and depositing a nickel or platinum thin film in situ in a mask opening limiting area by adopting magnetron sputtering to form a substrate-free thin film quasi-wall surface shearing force sensitive element; after the wire mask is replaced, a copper film is sputtered in situ to form a film-coated wire which is electrically connected with the sensitive element in a lap joint manner; and finally, carrying out electrical continuity detection and insulation integrity detection on the prepared quasi wall surface shearing force sensitive element and the coated wire. Substrate step disturbance can be eliminated, film-substrate combination and high-temperature service stability are improved, and the method is suitable for turbine boundary layer shear stress testing.

The invention discloses a method for representing the thickness of a metal film on the surface of a metal substrate through an oscillator, and the method comprises the steps: obtaining the thickness response data of the copper film on the surface of a double-layer metal substrate material through the oscillator based on known metal copper films with different thicknesses and the double-layer metal substrate material; and fitting a mathematical equation between the copper film thickness and the output data of the oscillator through a least square method algorithm. When a copper film with an unknown thickness is measured, firstly, a copper film material with a known thickness is used for calibration, an output value of a current oscillator is recorded, then data of the copper film with the known thickness is substituted into a fitting equation, and an output value of the fitting equation is solved; subtracting the current output value of the oscillator from the output value of the equation to obtain the difference value of the tiny drift; substituting the difference value into the fitting function to generate a new fitting equation after the tiny drift is eliminated; and finally, substituting the oscillator data of the copper film to be detected into the new fitting equation to invert the thickness of the unknown copper film.

The present application relates to a method for improving the three-point bending strength of neodymium-iron-boron by grain boundary diffusion. The method is as follows: polishing and cutting the surface of a neodymium-iron-boron magnet blank, then ultrasonic cleaning in a degreasing agent solution, followed by acid pickling, water washing and drying to obtain a dry neodymium-iron-boron base material; placing the neodymium-iron-boron base material in a copper plating solution and applying current to carry out copper plating to obtain a copper-coated neodymium-iron-boron base material; physically vapor depositing a heavy rare earth terbium film on the surface of the copper-coated neodymium-iron-boron base material in a direction parallel to the easy magnetization axis to obtain a terbium-copper-coated neodymium-iron-boron base material; and then sequentially carrying out heat treatment and tempering treatment under vacuum conditions. The present application coats a copper film on the neodymium-iron-boron base material by electroplating, then physically vapor deposits a heavy rare earth element terbium on the copper-coated neodymium-iron-boron base material in a direction parallel to the easy magnetization axis, carries out grain boundary diffusion heat treatment, and obtains excellent comprehensive magnetic properties while improving the three-point bending strength of neodymium-iron-boron.

The invention relates to a method for manufacturing a microwave circuit board with a metal covered edge, which is mainly used for manufacturing a resistor with a thin film. A pattern circuit is manufactured by using an alkaline etching process, so that the manufacturing process requirement of the metal covered edge is met; for the resistive film layer, the resistive film layer is firstly subjected to oxidation activation treatment through the liquid medicine, then the unnecessary resistive film layer is removed through the liquid medicine, etching of the pattern circuit and etching of the resistive film layer are separated, the resistive film layer is easier to remove after oxidation activation, and even for a microwave circuit board with a thick-surface copper design and a dense circuit design, the etching of the pattern circuit and the etching of the resistive film layer are not influenced. The resistive film layer can also be etched clean; according to a resistive film block in the method, windowing and surface processing are carried out together in a solder resist process and a process wire position for protection, a conductor copper thin film is etched together with the process wire position after surface treatment, a resistive film layer is exposed to obtain a resistor, and finally a layer of solder resist is coated for protection. The treatment mode that the resistance plate cannot be mechanically ground in the prior art is broken, and the surface treatment surface quality and the resistance value yield are improved.

The present disclosure provides a copper-coated aluminum wire material including an aluminum wire material and a copper thin film coating the aluminum wire material that a space factor of the thin copper film is in the range of 0.2% to 4%.

The application belongs to the technical field of photoelectric catalytic material preparation, and specifically provides a copper bismuthate / copper oxide conformal morphology heterojunction film and a preparation method thereof. The preparation method comprises the following steps: preparing a bismuth oxyiodide film, placing the bismuth oxyiodide film in a copper source solution, depositing for a certain time, sintering to obtain a pure-phase copper bismuthate film; preparing a copper nanocrystal solution through laser beam irradiation, dissolving thiourea molecules in the copper nanocrystal solution to obtain a mixed solution; spin-coating the mixed solution on the outer surface of the pure-phase copper bismuthate film, placing the pure-phase copper bismuthate film on a hot table for drying, placing the pure-phase copper bismuthate film in the copper source solution, depositing for a certain time again, sintering again to obtain a copper oxide second phase attached to the outer surface of the pure-phase copper bismuthate film, and obtaining the copper bismuthate / copper oxide conformal morphology heterojunction film. The pure-phase copper bismuthate film and the copper oxide second phase are obtained through two-time electrodeposition in sequence, the preparation process is simple and easy to control, and the surface dynamics and the surface carrier extraction efficiency of the prepared film are greatly improved.

The present application relates to the technical field of vacuum coating deposition and metal material surface treatment, and discloses a method for preparing a quasi-wall shear stress sensor on the surface of a turbine rotor blade by magnetron sputtering deposition and application. The method sprays or deposits an insulating layer on the surface of the turbine rotor blade to achieve an electrical isolation effect, and then sequentially performs cleaning, ion beam bombardment and vacuum drying to activate the deposition interface; a flexible mask is designed and assembled based on the blade surface topography data, and a nickel or platinum thin film is deposited in situ in the mask opening limited area by magnetron sputtering to form a substrate-free thin film quasi-wall shear stress sensitive element; after replacing the wire mask, a copper thin film is sputtered in situ to form a plated wire electrically connected to the sensitive element; finally, the prepared quasi-wall shear stress sensitive element and plated wire are subjected to electrical continuity detection and insulation integrity detection. The present application can eliminate substrate step disturbance, improve film-substrate adhesion and high-temperature service stability, and is suitable for turbine boundary layer shear stress testing.

This invention discloses a high-oxidation-resistant copper thin film and its preparation method, relating to the field of current collector technology. The method includes the following steps: Step 1: Prepare a magnetron sputtering device and use a copper circuit assembly for power transmission and grounding; Step 2: Use a single-crystal copper target to perform magnetron sputtering on both sides of the base film to deposit a copper seed layer; thus obtaining a high-oxidation-resistant copper thin film; the single-crystal copper target has a Cu(111) crystal plane, a purity of 99.99%, and a thickness of 9.8~10.2 mm; the copper circuit assembly includes a wire and a grounding platform, both made of single-crystal copper, with the single-crystal copper having a Cu(111) crystal plane or a close-packed crystal plane with an atomic density difference of ≤5% from the Cu(111) crystal plane. The high-oxidation-resistant copper thin film prepared by this invention exhibits excellent oxidation resistance.

The application provides a packaging structure of a high-voltage chip, which comprises a high-voltage chip, a first copper pad connected to the back surface of the high-voltage chip, a first external pin connected to the first copper pad, a second external pin connected to the active surface of the high-voltage chip, a copper film layer arranged between the high-voltage chip and the first copper pad, and the high-voltage chip being connected to the first copper pad through the copper film layer; a package body is arranged, and the high-voltage chip, the first copper pad, the first external pin, the second external pin and the copper film layer are arranged in the package body, and the first external pin and the second external pin are exposed on the outer surface of the package body.

The invention discloses an engineered myocardial tissue chip based on a flexible circuit board process and a preparation method thereof, the engineered myocardial tissue chip adopts the flexible circuit board process, a copper thin film is hot-pressed on a PET substrate layer, the copper thin film is patterned to obtain a copper wire layer, then a PET insulating layer is hot-pressed, a plurality of through holes are formed in the PET insulating layer, a gold electrode layer is deposited in the through holes to form a microelectrode array, and the engineered myocardial tissue chip is prepared. According to the method, the PET insulating layer is arranged on the surface of the MEA, the ordered fiber layer and the culture ring are manufactured on the PET insulating layer, low-cost and batch manufacturing of the MEA can be achieved, ordered fibers are integrated to simulate the natural growth environment of cells, meanwhile, the requirements for good biocompatibility, high light transmittance, high orientation and the like in myocardial cell culture are met, and the method is suitable for large-scale popularization and application. The method can be used for myocardial cell culture, electrophysiological signal monitoring, drug screening and the like.

The application belongs to the technical field of semiconductor photoelectrocatalytic functional materials, and particularly relates to a copper bismuthate-based composite thin film electrode material, a preparation method and application thereof. The application adopts a spin-coating-annealing-calcination process to construct a copper bismuthate thin film layer on a conductive substrate, and realizes the sequential loading of cadmium sulfide, noble metal or oxide thereof on the copper bismuthate thin film layer through chemical bath deposition and impregnation and calcination. The copper bismuthate thin film layer and the cadmium sulfide layer form a p-n heterojunction structure, and an electrocatalytic layer of noble metal is introduced on the surface of the p-n heterojunction, so as to enhance the interface charge transport process and improve the surface reaction kinetics. The copper bismuthate-based composite thin film electrode material not only has a simple preparation process, but also has high photoelectrocatalytic activity and cycle stability, so as to realize the efficient degradation of organic pollutants and has high application prospect.