250 results about "Copper thin film" patented technology

The invention discloses a method for preparing a graphite alkyne film. The method comprises that: a copper sheet or any one substrate the surface of which is covered with a copper film layer is used as a substrate; 6-alkynyl-benzene is subjected to coupling reaction in a solvent under the catalytic action of the copper to obtain the graphite alkyne film on the surface of the substrate. The method for preparing the graphite alkyne film, which is provided by the invention, has simple and convenient process, and can carry out large-scale preparation of the graphite alkyne film on the surface of the copper sheet or the substrate any surface of which is covered with the copper. The electrical conductivity of the graphite alkyne film is 2.516*10-4S/m. The film has uniform surface, can exist stably in the air, is a semiconductor with similar performances with silicon, and has potential application prospect in the fields of catalysis, electron, semiconductor, energy, material and the like.

An insulated organic copolymer is provided, having the excellent mechanical strength and deposition property at an interface contacting the lower base or the upper layer of the inorganic insulation film, and the effective dielectric constant is low as the whole film, which is suitable as the interlayer insulation film that separates the multi-layer copper wirings of the semiconductor device. The organosiloxane copolymer film is obtained by the polymerization of the cyclosiloxane and the straight-chain siloxane as the raw materials by the plasma excitation of both. At the interfaces contacting the inorganic insulation films, the interface layers having a film quality that is intricate and excellent in deposition property are prepared whereby the main component of the film composition is the straight-chain siloxane. The inner section of the copolymer film mixes the cyclosiloxane component having pores surrounded by the cyclosiloxane backbone and the straight-chain siloxane components, has the network structure layer relatively suppressing the density, and has the composition changing in the thickness direction whereby the multi-layer wirings embedding the copper thin film is formed.

A semiconductor surface cleaning agent containing a compound the molecule of which has a nitrogen atom having an unshared electron pair and used for cleaning the surface of a semiconductor on which copper wiring is provided, and a method for cleaning the surface of a semiconductor characterized by treating the surface of a semiconductor on which copper wiring is provided with such a cleaning agent. The cleaning agent does not corrode the copper wiring (copper thin film) on the semiconductor and SiO₂ of the interlayer insulating film, does not impair the flatness of the surface, and is effective in removing CuO and particles adhering to the surface of the Cu-CMP step.

Copper (I) amidinate precursors for forming copper thin films in the manufacture of semiconductor devices, and a method of depositing the copper (I) amidinate precursors on substrates using chemical vapor deposition or atomic layer deposition processes.

The invention relates to a method for preparing a nano porous copper thin film material by magnetron sputtering. The method takes a commercial copper foil as a base body material and takes high-purity copper target and aluminum target as sputtering materials; magnetron sputtering equipment is a preparation tool; a nano porous copper thin film is obtained by sputtering a copper-aluminum thin film through a glow discharge principle, and dealloying and corroding to remove an active component aluminum after annealing and alloying. The method provided by the invention is a two-step reaction method, the problems in the prior art that steps for carrying out smelting, ball milling and melt spinning on alloy auxiliary materials are complicated and consumed time is long are solved, and steps of a preparation process are simplified; a nano porous structure of nano porous copper is obtained and the size of the thin film is controllable; the obtained structure is better than a nano porous copper powder sample obtained by a traditional method; furthermore, an application range of the nano porous copper is enlarged and the nano porous copper has a commercial prospect.

Disclosed is a method for fabricating a CuInS₂ thin film by metal-organic chemical vapor deposition (MOCVD). The method comprises fabricating a copper thin film by depositing an asymmetric copper precursor on a substrate by MOCVD and fabricating a CuInS₂ thin film by depositing an indium-sulfur-containing precursor on the copper thin film by MOCVD. The method enables fabrication of a CuInS₂ thin film with a constant composition even under vacuum as well as an argon (Ar) atmosphere. Disclosed is further a CuInS₂ thin film fabricated by the method. Disclosed is further a method for fabricating an In₂S₃ thin film for a window of a solar cell via deposition of an indium-sulfur-containing precursor on the CuInS₂ thin film by MOCVD. Disclosed further is an In₂S₃ thin film fabricated by the method. The In₂S₃ thin film is useful for a substitute for CdS conventionally used for windows of solar cells and contributes to simplification in fabrication process of solar cells.

A resin composition which contains at least constituent elements (A)-(E) described below and wherein the epoxy resin (A) contains 80-100% by mass of a bifunctional epoxy resin and component (D) is contained in an amount of 60-85% by mass relative to 100% by mass of the total mass of the resin composition. This resin composition does not substantially contain a solvent and is in a liquid state at room temperature. (A) an epoxy rein (B) an amine-based curing agent (C) an accelerator that has at least one functional group selected from among a dimethylureide group, an imidazole group and a tertiary amino group (D) silica particles (E) a silane coupling agent Provided is a resin composition which has excellent curability at low temperatures and a sufficiently low linear expansion coefficient after curing. This resin composition does not suffer from warping in cases where applied to a copper thin film and molded, and does not suffer from separation or cracks even if a substrate obtained therefrom is bent. Also provided is a semiconductor mounting substrate which is obtained by molding the resin composition.

A laminated metal thin plate produced by electrodeposition is composed of a plurality of metal layers provided by at least two kinds of materials different in composition from each other. The laminated metal thin plate includes a first layer excellent in mechanical characteristics and/or chemical resistance and a second layer excellent in electrical characteristics such as electrical conductivity. The first and the second layers are adhered to each other in atomic level directly at their interface, with composition gradient at their interface, or with an adherence buffer layer such as a copper thin film interposed therebetween. The first layer is at first deposited on an electrode substrate. The second layer is deposited on the first layer. Deposition is repeatedly carried out in such a way that the first layers on opposite sides of the second layer are equal in thickness. Finally, the electrode substrate is dissolved and removed.

A volatile copper aminoalkoxide complex of formula (I) can form a copper thin film having an improved quality by metal organic chemical vapor deposition (MOCVD):

wherein, R¹, R², R³ and R⁴ are each independently C_1-4 alkyl optionally carrying one or more fluorine substituents; and m is an integer in the range of 1 to 3.

The invention discloses an improved nano porous copper thin film. The surface of nano porous copper is modified by a single layer of graphene. The invention further provides a preparation method of the improved nano porous copper thin film. The preparation method comprises the following steps: placing a target material of manganese and a target material of copper manganese alloy at a target position in the cavity of a magnetic-control sputtering film-preparing instrument; fixing a monocrystalline silicon wafer to a tray right above the target position, vacuumizing, setting sputtering conditions, and opening the target material of pure manganese to start sputtering, so as to prepare a pure-manganese thin film on the silicon wafer; opening the target material of the copper manganese alloy to start sputtering, and forming a layer of copper manganese alloy thin film on the pure-manganese thin film; corroding the copper manganese alloy thin film so as to obtain the nano porous copper thin film; steeping and washing the prepared nano porous copper thin film so as to remove hydrochloric acid residual liquid on the surface; placing the clean nano porous copper thin film in graphene gel for soaking; removing the graphene gel floating on the surface so as to obtain the nano porous copper thin film compounded with the graphene. The nano porous copper thin film disclosed by the invention has the electrochemical cycling properties of high specific capacity and stability.

The invention provides a broadband perfect absorber based on a metallic film-core shell plasma structure. The broadband perfect absorber comprises a substrate, the broadband perfect absorber is of a multi-layered structure arranged on the substrate, a metallic film layer and a core shell nano-particle film layer are sequentially arranged from the substrate up, the core shell nano-particle film layer is composed of core shell particles with local surface plasma resonance characteristics, and the core shell particles are constituted by taking precious metals as cores and semiconductors as shells. The invention further provides a preparation method of the broadband perfect absorber. The broadband perfect absorber is simple in structure and optional in substrate, the metallic film can be a gold thin film, a silver thin film, a copper thin film and the like, liquid-liquid interface is used for self-assembling into a film, the operation is convenient, the area is controllable, the broadbandperfect absorber is suitable for a plurality of compounds of the precious metals and the semiconductors, and the manufacturing cost is low.

A method of depositing thin films comprising tantalum, tantalum nitride, and copper for barrier films and seed layers within high aspect ratio openings used for copper interconnects. The barrier films and seed layers are deposited at extremely low temperature conditions wherein the wafer stage temperature of the sputter source is chilled to about -70° C. to about 0° C. Most preferably, the present invention is practiced using a hollow cathode magnetron. The resulting tantalum and/or tantalum nitride barrier films and copper seed layers are superior in surface smoothness, grain size and uniformity such that subsequent filling of the high aspect ratio opening is substantially void-free.

The invention provides a preparation method of a copper/graphene composite material. The preparation method comprises the steps: firstly, preparing a graphene thin film on a rolled copper foil after cleaning and polishing by a chemical vapor deposition method, plating a SiO2/Si sheet with a layer of copper film with the thickness of 400-700 nm by a magnetron sputtering coater, and preparing a copper film/SiO2/Si sample; then, transferring the graphene thin film prepared by the chemical vapor deposition method to the surface of the copper film/SiO2/Si sample by a corrosion substrate method, toprepare a graphene/copper film/SiO2/Si sample; secondly, carrying out magnetron sputtering of the surface of the graphene thin film/copper film/SiO2/Si sample with a layer of copper film with the thickness of 450-550 nm, to obtain a copper film/graphene/copper film/SiO2/Si sample; finally, transferring the graphene thin film prepared by the chemical vapor deposition method to the surface of the composite material; and preparing and transferring graphene and sputtering copper thin films repeatedly, and finally obtaining the nanosandwich composite material with four layers of copper films and three layers of graphene thin films. The preparation method is simple, convenient to operate and low in cost, and has good application prospect.

The invention relates to a copper-doped perovskite thin film, an in-situ preparation method and a hole-transport-layer-free solar cell device. According to the copper-doped perovskite thin film, copper is doped in perovskite lattices in situ, and content of copper and lead is gradually reduced from the surface to the bottom of the copper-doped perovskite thin film. The in-situ preparation method includes the following steps that 1, a copper thin film is deposited, wherein firstly, the copper thin film is deposited on a substrate material; 2, copper iodide is prepared, wherein the deposited copper thin film reacts with iodine in a closed container, and a copper iodide thin film is obtained; 3, perovskite is prepared, wherein perovskite is prepared on the obtained copper iodide thin film in an in-situ spin-coating mode, and the copper-doped perovskite thin film is prepared in situ through annealing treatment. A solar cell does not need a hole transport layer, the cost is low, and the photoelectric conversion efficiency is high.

The present invention relates to a flexible printed circuit board which has extremely high adhesion performance and on which very fine circuit patterns can be formed by etching, and to a method for producing the same. In the present invention, in the flexible printed circuit board wherein a copper thin film made of copper or an alloy containing primarily copper is directly formed on at least one side of a plastic film substrate, and copper is formed further on the copper thin film by the electrolytic plating method, the above-mentioned copper thin film has a two-layer structure in which a layer including at least a crystalline structure is formed on the surface side thereof, and the X-ray relative intensity ratio between crystal lattice plane indices (200)/(111) in the above-mentioned crystalline structure is 0.1 or less.

The invention discloses a nano twin crystal copper thin film material and a preparation method and application thereof. The copper thin film material comprises a nano twin crystallization hierarchical structure, and the thickness ratio of the hierarchical structure in a copper thin film is larger than or equal to 90%. The hierarchical structure is composed of nano twin crystallization columnar crystals and nano twin crystallization equiaxed crystals, the thickness ratio of the nano twin crystallization equiaxed crystals in the hierarchical structure is larger than that of the nano twin crystallization columnar crystals in the hierarchical structure, and the nano twin crystallization equiaxed crystals are randomly distributed in the twin crystal lamellar direction. The nano twin crystal copper thin film material has the characteristics of excellent strength, ductility and mechanical isotropy, and can meet the requirement of a copper interconnection material for mechanical service performance.

In a method for forming a Cu thin film on a substrate including a Cu-CVD step of forming a first copper film on predetermined surface of a substrate by a CVD process and a plating step of further forming a second copper film on the first copper film by an electrolytic copper plating process using the first copper film as an electrode, a modifying step for modifying the first copper film by exposing it in an active atmosphere is interposed between the Cu-CVD step and the plating step. Thereby, fine voids can be effectively prevented from being formed in the vicinity of the interface between the first copper film and the second copper film.

Disclosed is an electrode film which does not exfoliate from, or diffuse into, an oxide semiconductor or an oxide thin film. An electrode layer comprises a highly adhesive barrier film being a Cu—Mg—Al thin film and a copper thin film; and an oxide semiconductor and an oxide thin film contact with the highly adhesive barrier film. With the highly adhesive barrier film having magnesium in a range of at least 0.5 at % but at most 5 at % and aluminum at least 5 at % but at most 15 at % when the total number of atoms of copper, magnesium, and aluminum is 100 at %, the highly adhesive barrier film has both adhesion and barrier properties. The electrode layer is suitable because a source electrode layer and a drain electrode layer contact the oxide semiconductor layer. A stopper layer having an oxide may be provided on a layer under the electrode layer.

The invention relates to a heat sink material, in particular to a heat sink material applied to micro-nano-scale power devices such as micro-nano optoelectronic devices and a preparation method of the heat sink material. The heat sink material comprises three or more copper film layers and three or more graphene layers, wherein the copper film layers and the graphene layers are combined together in an alternative mode. According to the heat sink material and the preparation method thereof, the multilayer stacking structure of copper/graphene is adopted, and the composite heat sink material with the multi-stacking layers of copper/graphene is obtained by preparing the copper films and graphene alternatively. The superhigh heat conductivity characteristic of graphene is utilized, graphene is directly grown on the copper film layers, the problem that graphene of a planar structure cannot be directly applied to heat sink materials is solved, and high heat conductivity can be achieved; meanwhile, the heat sink material has very high processibility through combination of graphene and copper.