27 results about "Copper thin film" patented technology

The invention discloses a low-frequency double-nonlinear quasi-zero-stiffness energy harvesting vibration isolator, and belongs to the technical field of nonlinear vibration control and energy harvesting. Comprising a supporting frame, an upper platform and a lower platform are horizontally installed on the supporting frame, and two vertical optical shafts are symmetrically installed and penetrate through the upper platform and the lower platform; the loading platform is used for bearing a vibration-isolated object and is mounted on the upper platform; the nonlinear negative stiffness structure is a bionic skeleton X-type mechanism arranged between the upper platform and the lower platform and provides negative stiffness restoring force; the non-linear positive stiffness structure is connected with the non-linear negative stiffness structure in parallel and provides restoring force which is non-linearly changed along with displacement; the energy harvesting unit comprises a copper film arranged on the inner side face of the supporting frame and a polytetrafluoroethylene film arranged on the outer side face of the upper platform, and the copper film and the polytetrafluoroethylene film form a friction nanometer generator. The problems that in the prior art, energy harvesting and ultralow-frequency vibration isolation energy harvesting cannot be carried out in a wider working frequency band are solved, and the vibration isolation energy harvesting efficiency can be effectively improved.

A surface plasmon resonance sensor system includes a sensor plate having a quartz glass substrate and a copper film sputtered onto the substrate and annealed for about two hours. A quartz prism is attached to a surface of the sensor plate, and a microfluidics unit containing carrier fluid is attached to the opposite surface. A target analyte reservoir is connected through a pump to inject target analytes into the microfluidics unit. A binder is attached to the copper film and binds to target analytes. A laser transmits a beam into the quartz prism at an incident angle that generates surface plasmons resonating with the copper film and reflects a phase shifted laser beam. Receive optics and a charge coupled device convert the phase shifted beam to electrical signals. A computing unit processes the electrical signals to compute refractive index changes based on phase shifts to indicate target analyte detection.

This application provides a method for preparing gallium oxide (GaO) with enhanced ultraviolet absorbance and a GaO material prepared according to this method. First, a GaO thin film capable of generating ultraviolet absorption is grown on a substrate by magnetron sputtering. The GaO thin film is then annealed. Next, a copper thin film is grown on the GaO thin film by magnetron sputtering, followed by rapid annealing, causing the copper film to crack into copper nanoparticles under heat. This preparation method utilizes copper nanoparticles to enhance the ultraviolet absorption performance of GaO. The process steps are simple and easy to operate, thus effectively reducing the preparation cost. Furthermore, the GaO material prepared by this method shows a significant improvement in ultraviolet absorbance.

The invention provides a method for adjusting the steady-state pipe diameter of a self-crimping inductor. The method comprises the steps of cleaning a substrate slice, depositing a germanium sacrificial layer, depositing a dual-frequency silicon nitride stress layer and depositing an aluminum oxide protection layer. The first photoetching and the reactive ion etching define a mesa structure, the second photoetching forms a metal conductive layer, and the third photoetching and the reactive ion etching define an etching window. In the step of forming the metal conducting layer through secondary photoetching, HMDS and negative photoresist are spin-coated on the surface of the high-frequency silicon nitride stress layer of the unit substrate, and overlay alignment, exposure and development are carried out by using a second mask plate designed with a width continuous or quasi-continuous progressive increase type plane pattern, namely a hollow pattern. Then, depositing a layer of copper film on the surface of the whole substrate by adopting electron beam evaporation equipment to form a metal conductive layer; and finally, stripping operation is carried out by utilizing photoresist removing liquid, and the region with the negative photoresist and the copper film covering the region are removed, so that a firmly attached copper conductive layer pattern with a specific cross section shape is formed in the region without the photoresist.

The invention discloses a preparation method of a copper single crystal wafer, the copper single crystal wafer prepared by the method and application of the copper single crystal wafer. The preparation method of the copper single crystal wafer comprises the following steps: performing oxygen plasma pretreatment on the surface of a sapphire single crystal wafer of which the crystal face orientation is a c face; depositing a copper film on the surface of the pretreated sapphire single crystal wafer; and annealing the copper thin film. According to the preparation method, the surface of the sapphire single crystal wafer with the crystal face orientation being the c face is pretreated through the oxygen plasma, hydroxyl termination of the sapphire surface is changed into oxygen termination, and therefore the dominant orientation of sputtering copper crystal grains is changed into OR-2 from OR-1; in the high-temperature annealing recrystallization process, OR-1 crystal grains with extremely low density begin to form and rapidly swallow OR-2 crystal grains around, and finally a large-size twin-crystal-free OR-1 oriented Cu (111) single crystal wafer is formed. The preparation method provided by the invention has good repeatability and amplification performance, and can realize batch preparation of Cu (111) single crystal wafers of 4-8 inches and epitaxial growth of high-quality graphene single crystal wafers.

The invention provides a method for adjusting a curling gap of a self-curling inductor. The method comprises the steps of cleaning a substrate slice, depositing a germanium sacrificial layer, depositing a dual-frequency silicon nitride stress layer and depositing an aluminum oxide protection layer. The first photoetching and the reactive ion etching define a mesa structure, the second photoetching forms a metal conductive layer, and the third photoetching and the reactive ion etching define an etching window. In the step of forming the metal conducting layer through secondary photoetching, HMDS and negative photoresist are spin-coated on the surface of the high-frequency silicon nitride stress layer of the unit substrate, and overlay alignment, exposure and development are carried out by using a second mask plate which is provided with a locally widened plane pattern, namely a hollow pattern, designed at a predetermined front half part contact position. And then, depositing a layer of copper film on the surface of the whole substrate by adopting electron beam evaporation equipment to form a metal conductive layer. According to the invention, the curling gap can be independently or flexibly adjusted, and the limitation that the stress is changed only by changing all materials or the curling gap is controlled through the thickness in the prior art is broken through.

The invention discloses a simulation method for preparing an aluminum-tin-copper film through magnetron sputtering and a related device, and relates to the technical field of analogue simulation, the method comprises the following steps: simulating a process of bombarding an aluminum-tin-copper alloy target material by argon ions according to a preset energy range of the argon ions to obtain sputtering atom data; based on the sputtering atom data, simulating the process of moving aluminum atoms, tin atoms and copper atoms from a target surface to a matrix by utilizing a constructed target three-dimensional model of magnetron sputtering equipment to obtain data of the atoms reaching the matrix; preprocessing the copper substrate in the constructed simulation box to obtain a target molecular dynamics simulation system; and determining deposition parameters according to the atom arrival matrix data, and performing aluminum-tin-copper film deposition process simulation and relaxation treatment on the target molecular dynamics simulation system based on the deposition parameters to obtain a microstructure model of the aluminum-tin-copper film. The simulation method is provided for process development and optimization of magnetron sputtering preparation of the high-performance aluminum-tin-copper thin film.

The invention provides a preparation method of a memristor based on nanometer laser direct writing, and relates to the technical field of memristor preparation. An adhesion layer and a copper film are deposited on a high-resistance silicon substrate by adopting a direct current magnetron sputtering method; forming an electrode pattern on the copper film through a photoetching process; constructing a metal-oxide-metal bridging structure in an unetched region between the electrode patterns by adopting a nano laser direct writing technology; and performing electroforming processing on the device after laser processing, and activating the memristive behavior.

The invention relates to the technical field of vacuum coating deposition and metal material surface treatment, and discloses a magnetron sputtering deposition preparation method and application of a turbine rotor blade surface quasi wall surface shear force sensor. According to the method, an insulating layer is sprayed or deposited on the surface of the turbine rotor blade to achieve the electrical isolation effect, and then cleaning, ion beam bombardment and vacuum drying are sequentially conducted to activate a deposition interface; the method comprises the following steps: designing and assembling a flexible mask based on blade curved surface morphology data, and depositing a nickel or platinum thin film in situ in a mask opening limiting area by adopting magnetron sputtering to form a substrate-free thin film quasi-wall surface shearing force sensitive element; after the wire mask is replaced, a copper film is sputtered in situ to form a film-coated wire which is electrically connected with the sensitive element in a lap joint manner; and finally, carrying out electrical continuity detection and insulation integrity detection on the prepared quasi wall surface shearing force sensitive element and the coated wire. Substrate step disturbance can be eliminated, film-substrate combination and high-temperature service stability are improved, and the method is suitable for turbine boundary layer shear stress testing.

The present application relates to a method for improving the three-point bending strength of neodymium-iron-boron by grain boundary diffusion. The method is as follows: polishing and cutting the surface of a neodymium-iron-boron magnet blank, then ultrasonic cleaning in a degreasing agent solution, followed by acid pickling, water washing and drying to obtain a dry neodymium-iron-boron base material; placing the neodymium-iron-boron base material in a copper plating solution and applying current to carry out copper plating to obtain a copper-coated neodymium-iron-boron base material; physically vapor depositing a heavy rare earth terbium film on the surface of the copper-coated neodymium-iron-boron base material in a direction parallel to the easy magnetization axis to obtain a terbium-copper-coated neodymium-iron-boron base material; and then sequentially carrying out heat treatment and tempering treatment under vacuum conditions. The present application coats a copper film on the neodymium-iron-boron base material by electroplating, then physically vapor deposits a heavy rare earth element terbium on the copper-coated neodymium-iron-boron base material in a direction parallel to the easy magnetization axis, carries out grain boundary diffusion heat treatment, and obtains excellent comprehensive magnetic properties while improving the three-point bending strength of neodymium-iron-boron.

The invention relates to a method for manufacturing a microwave circuit board with a metal covered edge, which is mainly used for manufacturing a resistor with a thin film. A pattern circuit is manufactured by using an alkaline etching process, so that the manufacturing process requirement of the metal covered edge is met; for the resistive film layer, the resistive film layer is firstly subjected to oxidation activation treatment through the liquid medicine, then the unnecessary resistive film layer is removed through the liquid medicine, etching of the pattern circuit and etching of the resistive film layer are separated, the resistive film layer is easier to remove after oxidation activation, and even for a microwave circuit board with a thick-surface copper design and a dense circuit design, the etching of the pattern circuit and the etching of the resistive film layer are not influenced. The resistive film layer can also be etched clean; according to a resistive film block in the method, windowing and surface processing are carried out together in a solder resist process and a process wire position for protection, a conductor copper thin film is etched together with the process wire position after surface treatment, a resistive film layer is exposed to obtain a resistor, and finally a layer of solder resist is coated for protection. The treatment mode that the resistance plate cannot be mechanically ground in the prior art is broken, and the surface treatment surface quality and the resistance value yield are improved.

The application belongs to the technical field of photoelectric catalytic material preparation, and specifically provides a copper bismuthate / copper oxide conformal morphology heterojunction film and a preparation method thereof. The preparation method comprises the following steps: preparing a bismuth oxyiodide film, placing the bismuth oxyiodide film in a copper source solution, depositing for a certain time, sintering to obtain a pure-phase copper bismuthate film; preparing a copper nanocrystal solution through laser beam irradiation, dissolving thiourea molecules in the copper nanocrystal solution to obtain a mixed solution; spin-coating the mixed solution on the outer surface of the pure-phase copper bismuthate film, placing the pure-phase copper bismuthate film on a hot table for drying, placing the pure-phase copper bismuthate film in the copper source solution, depositing for a certain time again, sintering again to obtain a copper oxide second phase attached to the outer surface of the pure-phase copper bismuthate film, and obtaining the copper bismuthate / copper oxide conformal morphology heterojunction film. The pure-phase copper bismuthate film and the copper oxide second phase are obtained through two-time electrodeposition in sequence, the preparation process is simple and easy to control, and the surface dynamics and the surface carrier extraction efficiency of the prepared film are greatly improved.

The present application relates to the technical field of vacuum coating deposition and metal material surface treatment, and discloses a method for preparing a quasi-wall shear stress sensor on the surface of a turbine rotor blade by magnetron sputtering deposition and application. The method sprays or deposits an insulating layer on the surface of the turbine rotor blade to achieve an electrical isolation effect, and then sequentially performs cleaning, ion beam bombardment and vacuum drying to activate the deposition interface; a flexible mask is designed and assembled based on the blade surface topography data, and a nickel or platinum thin film is deposited in situ in the mask opening limited area by magnetron sputtering to form a substrate-free thin film quasi-wall shear stress sensitive element; after replacing the wire mask, a copper thin film is sputtered in situ to form a plated wire electrically connected to the sensitive element; finally, the prepared quasi-wall shear stress sensitive element and plated wire are subjected to electrical continuity detection and insulation integrity detection. The present application can eliminate substrate step disturbance, improve film-substrate adhesion and high-temperature service stability, and is suitable for turbine boundary layer shear stress testing.

This invention discloses a high-oxidation-resistant copper thin film and its preparation method, relating to the field of current collector technology. The method includes the following steps: Step 1: Prepare a magnetron sputtering device and use a copper circuit assembly for power transmission and grounding; Step 2: Use a single-crystal copper target to perform magnetron sputtering on both sides of the base film to deposit a copper seed layer; thus obtaining a high-oxidation-resistant copper thin film; the single-crystal copper target has a Cu(111) crystal plane, a purity of 99.99%, and a thickness of 9.8~10.2 mm; the copper circuit assembly includes a wire and a grounding platform, both made of single-crystal copper, with the single-crystal copper having a Cu(111) crystal plane or a close-packed crystal plane with an atomic density difference of ≤5% from the Cu(111) crystal plane. The high-oxidation-resistant copper thin film prepared by this invention exhibits excellent oxidation resistance.

The application provides a packaging structure of a high-voltage chip, which comprises a high-voltage chip, a first copper pad connected to the back surface of the high-voltage chip, a first external pin connected to the first copper pad, a second external pin connected to the active surface of the high-voltage chip, a copper film layer arranged between the high-voltage chip and the first copper pad, and the high-voltage chip being connected to the first copper pad through the copper film layer; a package body is arranged, and the high-voltage chip, the first copper pad, the first external pin, the second external pin and the copper film layer are arranged in the package body, and the first external pin and the second external pin are exposed on the outer surface of the package body.

The application belongs to the technical field of semiconductor photoelectrocatalytic functional materials, and particularly relates to a copper bismuthate-based composite thin film electrode material, a preparation method and application thereof. The application adopts a spin-coating-annealing-calcination process to construct a copper bismuthate thin film layer on a conductive substrate, and realizes the sequential loading of cadmium sulfide, noble metal or oxide thereof on the copper bismuthate thin film layer through chemical bath deposition and impregnation and calcination. The copper bismuthate thin film layer and the cadmium sulfide layer form a p-n heterojunction structure, and an electrocatalytic layer of noble metal is introduced on the surface of the p-n heterojunction, so as to enhance the interface charge transport process and improve the surface reaction kinetics. The copper bismuthate-based composite thin film electrode material not only has a simple preparation process, but also has high photoelectrocatalytic activity and cycle stability, so as to realize the efficient degradation of organic pollutants and has high application prospect.

Disclosed is a negative electrode current collector including a copper thin film on which peaks and valleys are formed, and metal particles which are disposed in at least a portion of the valleys, have a higher standard reduction potential than a lithium ion, and are configured to form a solid solution with lithium (Li).

The invention discloses a preparation method of a purple fluorescent material. The preparation method comprises the following steps: firstly, putting a metal target material and a material growth substrate into a magnetron sputtering system; the magnetron sputtering system is vacuumized; argon is input into a sputtering system, and the pressure of the sputtering system is increased by regulating and controlling a valve control device; then, direct-current voltage is applied to the metal target material, magnetron sputtering is carried out, and an alloy film is obtained on the substrate; and adding an iodine source into the alloy film to obtain the aluminum-doped cuprous iodide. The aluminum element is uniformly distributed in the copper film by a magnetron sputtering method to form the copper alloy film containing aluminum. The aluminum element is introduced into the cuprous iodide thin film, so that the growth of cuprous iodide crystal grains is promoted, and the phase change of cuprous iodide is also caused. The fluorescent material reacts with iodine through metal at room temperature, the method is simple, the requirement on experimental conditions is low, and the cost is low.

A transparent conductive film comprising a first layer and a second layer, wherein: the second layer is directly laminated on the first layer; the second layer includes an HTB thin film that is a thin film of hexagonal tungsten bronze; and at least a part of the first layer is epitaxially bonded to the HTB thin film of the second layer.

As shown in the exploded view, this product is constructed by sandwiching a coil made of wound copper thin film between two cores that share the same central axis as the coil (see dashed line). The lead wires from the coil to the outside are fixed to the coil with fixing screws via washers. This product is constructed by housing this coil and core as a single unit in a case, and is incorporated into electronic equipment as a reactor.

A method of depositing a copper thin film inside a TGV using atomic layer sputtering epitaxy (ASE) is characterized in that the copper thin film is homogeneously deposited on the inside and surface of the TGV using an ASE process, and the copper thin film is deposited so that the upper and lower electrical resistances of the TGV are less than or equal to 0.1 Ω.

The invention relates to a self-powered wearable fetal movement monitoring device based on a magnetorheological elastomer and a use method of the self-powered wearable fetal movement monitoring device, and belongs to the technical field of sensor monitoring. The invention aims to solve the problems that in the existing fetal movement monitoring technology, a sensor is poor in attachment to the abdominal wall, needs external power supply, is susceptible to electromagnetic interference, cannot distinguish pregnant woman and fetal movement signals, and is difficult to associate and analyze the relationship between pregnant woman movement and fetal movement. The core of the technical scheme is that a flexible friction nano sensor based on a magnetorheological elastomer is adopted, and the sensor is composed of a skin-friendly latex film, a microstructure friction layer, a porous elastic supporting layer and a bottom flexible copper film with electrode and electromagnetic shielding functions; fetus activity signals are separated through a multi-sensor triangular layout and a signal compensation algorithm, and motion correlation analysis and self power supply are achieved by integrating an insole type energy collector. Long-term, continuous and accurate fetal movement monitoring can be achieved, comfort and safety are improved, and an effective means is provided for clinical and family monitoring.

The invention provides an advanced process control method, a preparation method and manufacturing equipment of a copper film, and the advanced process control method comprises the steps: obtaining the oxidation thickness of copper oxide generated by the reaction of copper in an aerobic atmosphere, and building a relation curve between the oxidation thickness of the copper oxide and the oxidation time; obtaining the second thickness of the reduced copper oxide after the reaction of the copper oxide and the reducing gas under the condition of the first temperature and the first flow, and establishing a relation curve of the reduction thickness and the reduction time of the copper oxide; and determining the actual thickness of the copper oxide according to the relation curve of the oxidation thickness and the oxidation time, and determining the reaction time of the copper oxide with the actual thickness and the reducing gas according to the relation curve of the reduction thickness and the reduction time, so that the copper oxide with the actual thickness is completely reduced. According to the method, the problem of excessive treatment caused by fixed prolonging of annealing time in a traditional process can be thoroughly solved, and gas waste caused by excessive processes is avoided.

The present invention relates to a method for dry etching a copper thin film by using plasma processing, and the technical subject matter is a method for dry etching a copper thin film by using plasma etching, the method having an XHy type second etching gas supplied in order to increase the reactivity between hydrogen atoms and copper chloride (CuClx), which is generated during copper thin film etching using an AClb type first etching gas.

This invention discloses a welding apparatus and method for suppressing the loss of reinforcing phases in Al-Mg-Li alloy lap joints. The method includes: 1. Mechanically grinding, cleaning, and vacuum drying the Al-Mg-Li alloy base material; 2. Processing a serrated surface array on the lap joint surface of the Al-Mg-Li alloy base material; 3. Using a pulsed laser to press a pure copper film onto the serrated surface array of the Al-Mg-Li alloy base material; 4. Clamping two Al-Mg-Li alloy base materials on a welding worktable and preheating the worktable; 5. After preheating, using a defocused laser to cyclically heat the lap joint area of ​​the Al-Mg-Li alloy base material, while simultaneously applying synchronous cyclic pressure to the lap joint area using rollers; 6. After welding, removing the weldment to complete the Al-Mg-Li alloy lap welding. This welding method effectively solves the problem of deterioration of the joint's mechanical properties caused by the burning of light elements during the laser welding of Al-Mg-Li alloys.

The negative electrode current collector according to the present invention includes a copper thin film having peaks and valleys formed thereon, and metal particles disposed in at least some of the valleys, the metal particles having a higher standard reduction potential than lithium ions and capable of forming a solid solution with lithium (Li).

The present invention relates to a method for dry etching of a copper thin film using a plasma process, characterized in that: in the method for dry etching of a copper thin film using a plasma etching process, a copper thin film is etched by a plasma etching process; an XHy-type second etching gas is supplied in order to improve the degree of reactivity between hydrogen atoms and copper chloride (CuClx) generated during etching of a copper thin film using an AClb-type first etching gas.