Preparation method of copper/graphene composite material

A composite material and graphene technology, applied in the field of materials science, can solve the problems of poor graphene dispersion and interface bonding, and achieve the effects of low cost, convenient operation and simple preparation method

Active Publication Date: 2018-02-16
UNIV OF SHANGHAI FOR SCI & TECH
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Problems solved by technology

[0005] The object of the present invention is to provide a kind of preparation method of copper/graphene composite material, and the preparation method of described this co

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  • Preparation method of copper/graphene composite material
  • Preparation method of copper/graphene composite material

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Embodiment Construction

[0024] Such as figure 1 Shown, the invention provides a kind of preparation method of copper / graphene composite material,

[0025] Step 1: Use acetone, ethanol, and deionized water to ultrasonically clean the rolled copper foil with a size of 20mm*20mm*0.03mm for 10 minutes each, then use hydrochloric acid with a volume fraction of 25% to ultrasonically clean the copper foil for 10 minutes, and finally use ethanol Ultrasonic cleaning copper foil three times for 5 minutes each.

[0026] Step 2: Electrochemical polishing is an effective means to improve the quality of the metal surface. In this experiment, the copper foil treated in step 1 was polished. The electrochemical polishing power supply used is an electrochemical workstation, the polishing voltage is 10V, the polishing time is 40s, the sensitivity is selected as 1.0×e-0001, and the ratio of the polishing solution is deionized water: phosphoric acid: ethanol: isopropanol: urea =100mL:50mL:50mL:10mL:1g, the anode is con...

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Abstract

The invention provides a preparation method of a copper/graphene composite material. The preparation method comprises the steps: firstly, preparing a graphene thin film on a rolled copper foil after cleaning and polishing by a chemical vapor deposition method, plating a SiO2/Si sheet with a layer of copper film with the thickness of 400-700 nm by a magnetron sputtering coater, and preparing a copper film/SiO2/Si sample; then, transferring the graphene thin film prepared by the chemical vapor deposition method to the surface of the copper film/SiO2/Si sample by a corrosion substrate method, toprepare a graphene/copper film/SiO2/Si sample; secondly, carrying out magnetron sputtering of the surface of the graphene thin film/copper film/SiO2/Si sample with a layer of copper film with the thickness of 450-550 nm, to obtain a copper film/graphene/copper film/SiO2/Si sample; finally, transferring the graphene thin film prepared by the chemical vapor deposition method to the surface of the composite material; and preparing and transferring graphene and sputtering copper thin films repeatedly, and finally obtaining the nanosandwich composite material with four layers of copper films and three layers of graphene thin films. The preparation method is simple, convenient to operate and low in cost, and has good application prospect.

Description

technical field [0001] The invention belongs to the field of materials science, and relates to a composite material, in particular to a preparation method of a copper / graphene composite material. Background technique [0002] Graphene is a new type of two-dimensional monoatomic layer atomic crystal formed by sp2 hybridization of carbon atoms, which has many peculiar properties such as physics, chemistry and machinery. In particular, graphene has excellent mechanical properties. Its Young's modulus is about 1TPa, and its strength is about 130180 GPa equivalent to that of single-walled carbon nanotubes. It is one of the strongest materials found in the world. In recent years, many researchers have studied graphene in many aspects, and the application of graphene has broad prospects. Although graphene has extensive and meaningful application progress in many fields, the research and application of graphene-based composite materials is still relatively small. [0003] The ex...

Claims

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Application Information

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IPC IPC(8): C01B32/186C01B32/194B32B37/02C23C16/01C23C16/26C23C14/16C23C14/35C23C28/00
CPCB32B37/02C23C14/165C23C14/35C23C16/01C23C16/26C23C28/322C23C28/34C23C28/40
Inventor 张柯宋瑞利刘平李伟陈小红马凤仓何代华刘新宽
Owner UNIV OF SHANGHAI FOR SCI & TECH
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