Improved nano porous copper thin film and preparation method thereof

A nanoporous copper and thin film technology, applied in the field of nanomaterials, can solve problems such as poor battery life, achieve and stabilize electrochemical cycle performance, simple operation process, and excellent performance

Inactive Publication Date: 2015-07-22
UNIV OF SHANGHAI FOR SCI & TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] Aiming at the above-mentioned technical problems in the prior art, the present invention provides an improved nanoporous copper film and its pr

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  • Improved nano porous copper thin film and preparation method thereof
  • Improved nano porous copper thin film and preparation method thereof
  • Improved nano porous copper thin film and preparation method thereof

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Embodiment Construction

[0027] Put the pure manganese target and the copper-manganese alloy target (the chemical composition is expressed in atomic %: Cu: 30; Mn: 70) into the target position in the chamber of the magnetron sputtering film forming instrument, and put the clean single crystal silicon Fix the film on the tray directly above the target position, close the chamber and start vacuuming, and the vacuum degree of the chamber is pumped to 1.5×10 -4 After Pa, set the sputtering conditions as sputtering power DC 50 W, Ar gas pressure 0.5 Pa. Turn on the pure manganese target to start sputtering, and stop the pure manganese sputtering after 10 minutes. At this time, a layer of pure manganese film is prepared on the silicon wafer with a thickness of 140 nm; then turn on the copper-manganese target and start sputtering, 50 minutes Finally stop the copper-manganese sputtering, at this time a layer of copper-manganese alloy film is formed on the pure manganese film with a thickness of 620 nm; the S...

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Abstract

The invention discloses an improved nano porous copper thin film. The surface of nano porous copper is modified by a single layer of graphene. The invention further provides a preparation method of the improved nano porous copper thin film. The preparation method comprises the following steps: placing a target material of manganese and a target material of copper manganese alloy at a target position in the cavity of a magnetic-control sputtering film-preparing instrument; fixing a monocrystalline silicon wafer to a tray right above the target position, vacuumizing, setting sputtering conditions, and opening the target material of pure manganese to start sputtering, so as to prepare a pure-manganese thin film on the silicon wafer; opening the target material of the copper manganese alloy to start sputtering, and forming a layer of copper manganese alloy thin film on the pure-manganese thin film; corroding the copper manganese alloy thin film so as to obtain the nano porous copper thin film; steeping and washing the prepared nano porous copper thin film so as to remove hydrochloric acid residual liquid on the surface; placing the clean nano porous copper thin film in graphene gel for soaking; removing the graphene gel floating on the surface so as to obtain the nano porous copper thin film compounded with the graphene. The nano porous copper thin film disclosed by the invention has the electrochemical cycling properties of high specific capacity and stability.

Description

technical field [0001] The invention belongs to the field of nanometer materials, in particular to a nanoporous copper film, in particular to an improved nanoporous copper film and a preparation method thereof. Background technique [0002] Due to their high specific surface area, high specific capacity, excellent electrochemical catalytic performance and stable cycle performance, nanoporous metal materials have attracted extensive attention in the field of electrochemistry, and are considered as potential electrode materials for new energy storage devices. The research results show that the electrochemical capacity of nanoporous metals is much larger than that of existing graphite materials, which has a dramatic improvement in the battery life, but its further promotion is greatly limited due to the high cost of raw materials and preparation process. . [0003] As far as the preparation technology of the original alloy thin film is concerned, it mainly includes the bulk al...

Claims

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Application Information

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IPC IPC(8): C23C14/35C23C14/16C23C14/58C23F1/02C23C24/00C23C28/00B32B3/24B32B15/04B32B9/04B82Y30/00B82Y40/00
Inventor 刘洁潘登
Owner UNIV OF SHANGHAI FOR SCI & TECH
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