The invention relates to the technical field of
ceramic welding, in particular to a novel reaction
sintering boron carbide ceramic self-infiltration connection method. According to the method, the to-be-connected surfaces of the reactive
sintering boron carbide ceramics are polished to be consistent in roughness at the normal temperature and then pressed, the two reactive
sintering boron carbide ceramics can be successfully connected at the high temperature through
diffusion and interface reaction of residual
silicon of the reactive sintering
boron carbide ceramics, and the formed connecting layer mainly comprises three phases of Si, SiC and B12 (C, Si, B) 3; compared with the prior art, the method has the advantages that the adaptability between the connecting layer and the base material
boron carbide is good, almost most of the mechanical properties of the base material
boron carbide are reserved, in addition, many fine
silicon carbide phases are formed at the interface, and the
interface bonding is good, so that the connection of the reactive sintering boron carbide
ceramic is simply realized under the condition of not adding any middle layer, and the service life of the reactive sintering boron carbide ceramic is prolonged. And a connection interface is complete, defects such as air holes are few, and most of the bending strength is reserved.