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Copper-doped perovskite thin film, in-situ preparation method and hole-transport-layer-free solar cell device

An in-situ preparation and perovskite technology, which is applied in the direction of electrical solid devices, electrical components, semiconductor devices, etc., can solve the problems of high cost, high cost of hole transport layer, low photoelectric conversion efficiency of perovskite solar cells, etc. , to achieve the effect of reducing energy consumption, reducing cost, and the preparation method is simple and controllable

Active Publication Date: 2017-06-13
XUCHANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] In view of the deficiencies in the prior art: the photoelectric conversion efficiency of perovskite solar cells is not high, the cost is high, especially the problem that the cost of the hole transport layer is high, the technical problem to be solved by the present invention is to provide a copper-lead content ratio composed of copper Copper-doped perovskite film gradually decreasing from the surface to the bottom of the doped perovskite film, and a solar cell comprising the copper-doped perovskite film

Method used

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  • Copper-doped perovskite thin film, in-situ preparation method and hole-transport-layer-free solar cell device
  • Copper-doped perovskite thin film, in-situ preparation method and hole-transport-layer-free solar cell device
  • Copper-doped perovskite thin film, in-situ preparation method and hole-transport-layer-free solar cell device

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Effect test

Embodiment 1

[0052] (1) Substrate cleaning: Clean the ITO glass ultrasonically with detergent for 30 minutes, then rinse it with deionized water, then ultrasonically clean it with acetone for 30 minutes, then ultrasonically clean it with absolute ethanol for 30 minutes, and finally dry it with a nitrogen gun and use ultraviolet light to clean it. Irradiate for 2 minutes;

[0053] (2) Cuprous iodide: Use vacuum evaporation technology to vapor-deposit a 10nm-thick elemental copper film on the cleaned ITO conductive glass, then add elemental iodine particles in a closed container, and then deposit the ITO conductive glass with a copper film Put it in and keep it at 25°C for 1-5min until the copper reacts completely;

[0054] (3) Copper-doped perovskite layer: Under oxygen-barrier and anhydrous conditions such as a glove box, take lead acetate and CH with a molar ratio of 1:3 3 NH 3 I was dissolved in N,N-dimethylformamide to prepare 1mol / L CH 3 NH 3 PB 3 solution, the CH 3 NH 3 PB 3 T...

Embodiment 2

[0057] (1) Substrate cleaning: Clean the ITO glass ultrasonically with detergent for 30 minutes, then rinse it with deionized water, then ultrasonically clean it with acetone for 30 minutes, then ultrasonically clean it with absolute ethanol for 30 minutes, and finally dry it with a nitrogen gun and use ultraviolet light to clean it. Irradiate for 2 minutes;

[0058] (2) Cuprous iodide: Use vacuum evaporation technology to vapor-deposit a 20nm-thick elemental copper film on the cleaned ITO conductive glass, add elemental iodine particles into the airtight container, and then conduct the ITO of the deposited copper film Put the glass in and keep it at 25°C for 1-5min until the copper reacts completely;

[0059] (3) Copper-doped perovskite layer: under the condition of oxygen barrier and anhydrous, take lead acetate and CH with a molar ratio of 1:3 3 NH 3 I was dissolved in N,N-dimethylformamide to prepare 1mol / L CH 3 NH 3 PB 3 solution, the CH 3 NH 3 PB 3 The solution w...

Embodiment 3

[0062] (1) Substrate cleaning: Clean the ITO glass ultrasonically with detergent for 30 minutes, then rinse it with deionized water, then ultrasonically clean it with acetone for 30 minutes, then ultrasonically clean it with absolute ethanol for 30 minutes, and finally dry it with a nitrogen gun and use ultraviolet light to clean it. Irradiate for 2 minutes;

[0063] (2) Cuprous iodide: Use vacuum evaporation technology to vapor-deposit a 30nm-thick elemental copper film on the cleaned ITO conductive glass, add elemental iodine particles into the airtight container, and then conduct the ITO of the deposited copper film Put the glass in and keep it at 25°C for 1-5min until the copper reacts completely;

[0064] (3) Copper-doped perovskite layer: under the condition of oxygen barrier and anhydrous, take lead acetate and CH with a molar ratio of 1:3 3 NH 3 I was dissolved in N,N-dimethylformamide to prepare 1mol / L CH 3 NH 3 PB 3 solution, the CH 3 NH 3 PB 3 The solution w...

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Abstract

The invention relates to a copper-doped perovskite thin film, an in-situ preparation method and a hole-transport-layer-free solar cell device. According to the copper-doped perovskite thin film, copper is doped in perovskite lattices in situ, and content of copper and lead is gradually reduced from the surface to the bottom of the copper-doped perovskite thin film. The in-situ preparation method includes the following steps that 1, a copper thin film is deposited, wherein firstly, the copper thin film is deposited on a substrate material; 2, copper iodide is prepared, wherein the deposited copper thin film reacts with iodine in a closed container, and a copper iodide thin film is obtained; 3, perovskite is prepared, wherein perovskite is prepared on the obtained copper iodide thin film in an in-situ spin-coating mode, and the copper-doped perovskite thin film is prepared in situ through annealing treatment. A solar cell does not need a hole transport layer, the cost is low, and the photoelectric conversion efficiency is high.

Description

technical field [0001] The invention belongs to the technical field of photoelectric materials, and in particular relates to a copper-doped perovskite thin film, an in-situ preparation method and a solar cell device without a hole transport layer. Background technique [0002] In recent years, perovskite solar cells have attracted widespread attention due to their excellent photoelectric conversion performance and huge market application potential. With the development of perovskite solar cell technology, the photoelectric conversion efficiency of solar cell devices based on perovskite materials has reached as high as 22%. [0003] The structures of perovskite solar cells that have been reported so far mainly include: substrate material / electron transport layer / perovskite / hole transport layer / metal electrode. However, in order to improve the battery efficiency as much as possible, the expensive spiro-OMeTAD is mostly used as the hole transport layer. [0004] Now many rese...

Claims

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Application Information

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IPC IPC(8): H01L51/42H01L51/46H01L51/44H01L51/48
CPCH10K71/10H10K85/00H10K30/10H10K30/80Y02E10/549
Inventor 郑直路凯雷岩齐瑞娟刘江杨晓刚赵超亮刘松子宋皓
Owner XUCHANG UNIV
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