Apparatus and method for depositing superior Ta (N) copper thin films for barrier and seed applications in semiconductor processing

Abstract

A method of depositing thin films comprising tantalum, tantalum nitride, and copper for barrier films and seed layers within high aspect ratio openings used for copper interconnects. The barrier films and seed layers are deposited at extremely low temperature conditions wherein the wafer stage temperature of the sputter source is chilled to about −70° C. to about 0° C. Most preferably, the present invention is practiced using a hollow cathode magnetron. The resulting tantalum and / or tantalum nitride barrier films and copper seed layers are superior in surface smoothness, grain size and uniformity such that subsequent filling of the high aspect ratio opening is substantially void-free.

Description

[0001]This application is a continuation of Ser. No. 09 / 491,853, filed Jan. 26, 2000, now U.S Pat. No. 6,541,371, which claims the benefit of U.S. Provisional Application No. 60 / 119,314 filed on Feb. 8, 1999.BACKGROUND OF THE INVENTION[0002]1. Field of the Invention[0003]The present invention relates to an apparatus and method for depositing tantalum (Ta) and tantalum nitride (TaN) barrier films, and copper (copper) thin films for applications in semiconductor processing. The preferred embodiment of this invention is related to U.S. Pat. No. 5,482,611 entitled “Physical Vapor Deposition Employing Ion Extraction From a Plasma” issued on Jan. 9, 1996 to Helmer et al., and assigned to the same assignee, Novellus Systems, Inc., and incorporated herein by reference in its entirety.[0004]2. Description of Related Art[0005]Tantalum and / or tantalum nitride for barrier liners and copper seed layers are being considered by all major manufacturers as the primary interconnect metals for applica...

AI Technical Summary

Problems solved by technology

This barrier layer prevents diffusion of copper into the semiconductor devices as copper diffusion is detrimental to the performance of the devices resulting in shorts.

Standard PVD techniques are proven to be inadequate for depositing films in narrow, high aspect ratio structures with necessary and sufficient step coverage.

However, many of he IPVD sources suffer from the fact that they cannot produce a sufficiently high density plasma that can adequately ionize the depositing metal species.

However, the use of RF bias on the wafer causes an increase in the wafer temperature.

An increase in temperature would degrade the quality of films such as t tantalum / tantalum nitride and copper resulting in decreased barrier performance and unsatisfactory copper fill as mentioned above.

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