51 results about "Constant composition" patented technology

A porous organosilicate glass (OSG) film: Si_vO_wC_xH_yF_z, where v+w+x+y+z=100%, v is 10 to 35 atomic %, w is 10 to 65 atomic %, x is 5 to 30 atomic %, y is 10 to 50 atomic % and z is 0 to 15 atomic %, has a silicate network with carbon bonds as methyl groups (Si—CH₃) and contains pores with diameter less than 3 nm equivalent spherical diameter and dielectric constant less than 2.7. A preliminary film is deposited by a chemical vapor deposition method from organosilane and/or organosiloxane precursors, and independent pore-forming precursors. Porogen precursors form pores within the preliminary film and are subsequently removed to provide the porous film. Compositions, film forming kits, include organosilane and/or organosiloxane compounds containing at least one Si—H bond and porogen precursors of hydrocarbons containing alcohol, ether, carbonyl, carboxylic acid, ester, nitro, primary amine, secondary amine, and/or tertiary amine functionality or combinations.

The present invention provides an electrochemical system and process for the production of very high purity hydride gases and the feed product streams including these hydride gases at constant composition over extended periods of time. The processes and apparatuses of the invention can employ a lined pressure vessel (1) within which resides an electrochemical cell including cathode (2) and anode (3) material. The hydride gas produced within the vessel exits through port (4) to a manifold which contains automatic valve (8) to allow exit of the hydride gas. The hydride gas passes through one or more filters (7). The gas finally exits the manifold through a pressure regulator (6) to the point where it is utilized in semiconductor fabrication. A source of gas (11) for mixing with the hydride gas is also included.

Epoxy compositions exhibiting low viscosity in the uncured state and low coefficient of thermal expansion in the cured state are provided. Also provided are processes for making the epoxy compositions. The low dielectric constant compositions are well-suited for use in multi-layer printed circuit boards. The desired properties are achieved by employment of a bimodal distribution of nano-scale fillers in the epoxy compositions.

A method of fabricating semiconductor heterostructures including the steps of: (a) positioning a silicon wafer in a suitable environment and (b) processing the silicon substrate by applying several processing steps. A first optional processing step includes growing a graded buffer layer on a silicon substrate by low-energy plasma-enhanced chemical vapor deposition (LEPECVD). A second processing step includes growing a constant composition buffer layer by LEPECVD. A third processing step includes subjecting the surface of the strain-relaxed buffer layer to a deposition process for a period of time and under prescribed conditions, in order to grow at least one additional layer. Subsequently, devices may be processed from the grown layer stack by using a prescribed sequence of steps including non-standard CMOS processes.

Disclosed is a method for fabricating a CuInS₂ thin film by metal-organic chemical vapor deposition (MOCVD). The method comprises fabricating a copper thin film by depositing an asymmetric copper precursor on a substrate by MOCVD and fabricating a CuInS₂ thin film by depositing an indium-sulfur-containing precursor on the copper thin film by MOCVD. The method enables fabrication of a CuInS₂ thin film with a constant composition even under vacuum as well as an argon (Ar) atmosphere. Disclosed is further a CuInS₂ thin film fabricated by the method. Disclosed is further a method for fabricating an In₂S₃ thin film for a window of a solar cell via deposition of an indium-sulfur-containing precursor on the CuInS₂ thin film by MOCVD. Disclosed further is an In₂S₃ thin film fabricated by the method. The In₂S₃ thin film is useful for a substitute for CdS conventionally used for windows of solar cells and contributes to simplification in fabrication process of solar cells.

Vapor-liquid-solid growth of nanowires is tailored to achieve complex one-dimensional material geometries using phase diagrams determined for nanoscale materials. Segmented one-dimensional nanowires having constant composition display locally variable electronic band structures that are determined by the diameter of the nanowires. The unique electrical and optical properties of the segmented nanowires are exploited to form electronic and optoelectronic devices. Using gold-germanium as a model system, in situ transmission electron microscopy establishes, for nanometer-sized Au—Ge alloy drops at the tips of Ge nanowires (NWs), the parts of the phase diagram that determine their temperature-dependent equilibrium composition. The nanoscale phase diagram is then used to determine the exchange of material between the NW and the drop. The phase diagram for the nanoscale drop deviates significantly from that of the bulk alloy.

Compositions and processes for the preparation of printed circuits from epoxy compositions are provided. The epoxy compositions exhibit low viscosity in the uncured state and low coefficient of thermal expansion in the cured state. The low dielectric constant compositions of the invention are well-suited for use in multi-layer printed circuit boards.

A method of fabrication of barrier diode based infrared detectors, utilizing the growth of unstrained, not relaxed III-V compound semiconductor material layers having a lattice constant over 6 Angstrom, is provided. The growth is performed by the means of Molecular Beam Epitaxy (MBE) or Metal-Organic Vapor Phase Epitaxy (MOVPE). The method comprises the use of bulk crystalline substrates and the growth of a transitional layer of GaInAsSb with graded composition, followed by an optional thick layer of GaInAsSb of constant composition, lattice matched to the said III-V compound semiconductor material layers, the said optional layer of GaInAsSb of constant composition serving as a virtual substrate. The method provides high crystalline quality layers suitable for semiconductor device fabrication that can effectively interact with electromagnetic radiation of the mid-infrared spectral range with a wavelength between about 2 micrometers to about 16 micrometers.

An oriented ferroelectric thin-film device includes a substrate, a conductive thin-film disposed on the substrate, and a ferroelectric thin-film disposed on the conductive thin-film, wherein the conductive thin-film comprises a polycrystalline conductive material, the ferroelectric thin-film comprises a Pb-containing perovskite oxide and includes a first ferroelectric sub-layer and a second ferroelectric sub-layer, the first ferroelectric sub-layer is disposed on the conductive thin-film and has a composition changing in the thickness direction, and the second ferroelectric sub-layer is disposed on the first ferroelectric sub-layer and has a constant composition. The ferroelectric thin-film is oriented in a uniaxial direction such that the c-axis is perpendicular to the substrate. A method for manufacturing the oriented ferroelectric thin-film device includes the steps of forming a polycrystalline conductive thin-film on a substrate, and forming a ferroelectric thin-film on the polycrystalline conductive thin-film.

The high dielectric constant composite material includes at least one of PAQR or its derivative as the high dielectric constant stuffing in 10-80 wt% and at least one kind of polymer material as the basic material in 20-90 wt%. The high dielectric constant composite material has high stability, good machining performance, and dielectric constant as high as 30,000, and may be used in superhigh capacity capacitor, computer chip, micro electromechanical system, simulating device, natural energy source utilization, and other fields.

The present invention provides a plastic magnet precursor which can be supplied to a step of molding a plastic magnet at a constant composition without requiring a kneading step in which a resin is melted and sheared. Through injection molding using the precursor, a plastic magnet having little deterioration of magnetic properties and a small variation in quality is obtained. The plastic magnet precursor according to the present invention includes an Nd—Fe—B isotropic magnet powder (1) and a ferrite anisotropic magnet powder subjected to a coating treatment with a titanate coupling agent (4), and a thermoplastic resin powder (2) is adhered around the magnet powder (1) to form a powder shape.

A camera apparatus for capturing a picture image or a dynamic image of a constant composition without relation to a slope of a camera apparatus and a capturing method thereof are provided. The capturing method includes converting an image input through a lens into at least one of a picture image and a dynamic image, determining whether an operation mode of the camera apparatus corresponds to a fixed composition mode, and cropping at least a part of the at least one of the picture image and dynamic image having a preset composition and storing the least a part of the at least one of the picture image and the dynamic image if the operation mode corresponds to the fixed composition mode.

The present invention relates to a blue-green sensitive transmission-type GaAlAs cathode of Al compositional gradient gradual change which is sensitive to blue-green light. The cathode is formed by a Corning 7056# glass substrate, a SiO2 protection layer, a Si3N4 anti-reflection layer, a Ga1-x1Alx1As window layer with Al constant composition, a Ga1-x2Alx2As emission layer with Al compositional gradient gradual change and a Cs/O activation layer arranged from down to up. The blue-green sensitive transmission-type GaAlAs cathode of Al compositional gradient gradual change prepares the blue-green sensitive negative electron affinity transmission-type GaAlAs photoelectric cathode based on the Ga1-xAlxAs ternary compound Al/Ga composition control technology, the III-V group compound material epitaxy technology, the photoelectric cathode module preparation technology and the ultrahigh vacuum laser technology, combines an electron multiplier to form a blue-green detector, and can be applied to the fields of sea detection, seabed imaging and the like.

A tire having at least one reinforcement ply formed of reinforcement elements embedded in vulcanized rubber, characterized in that the reinforcement elements for said ply are individually coated in a rubber mix (B, B₁), referred to as “coating mix”, having a given composition and physical properties, the reinforcement elements arranged parallel to each other being covered on one face by a first rubber layer (A, A₁), referred to as “first calendering layer”, of constant composition and properties, whereas the elements are covered on the opposite face by a second rubber calendering layer (C, D), of composition and properties which are variable according to the meridian position on the ply within the tire.

Low dielectric compositions and methods of use thereof in integrated circuits are disclosed. The low dielectric compositions are derived from carbosilane polymers and oligomers containing imbedded sila- or disilacyclobutane rings and, after heating to induce cross-linking, may be used as an interlayer dielectric as well as a capping layer within an integrated circuit.

A semiconductor substrate, a field effect transistor, a method of forming a SiGe layer and a method of forming a strained Si layer using the same, and a method of manufacturing a field effect transistor are provided, which enable the threading dislocation density of the SiGe layer to be reduced and the surface roughness to be minimized. On top of a Si substrate 1 is provided a SiGe buffer layer 2, 12 constructed of a plurality of laminated layers comprising alternating layers of a SiGe gradient composition layer 2a, 12a in which the Ge composition ratio increases gradually from the Ge composition ratio of the base material, and a SiGe constant composition layer 2b, 12b which is provided on top of the gradient composition layer and in which the Ge composition ratio is equal to that of the upper surface of the gradient composition layer.