55results about How to "Improve interface features" patented technology

A reinforced perfluoro ion exchange film is composed of at least two layers of ionic film, which prepared from perfluoro ion exchange resin and fused together without interface, at least one layer of perfluoro polymer mesh as reinforcing material and the perfluoro polymer microfibres added to said filming resin. It is prepared through sequential coating. Its advantages are low film resistance, high electric current efficiency, and high mechanical strength and size stability.

The invention discloses a transmission-type GaN ultraviolet photocathode based on a composition graded buffer layer, the cathode consists of a double-polished c surface sapphire substrate, an AlxGa1-xN composition graded buffer layer, a p-type GaN emission layer and a Cs or Cs/O active coating from bottom to top; the AlxGa1-xN composition graded buffer layer consists of n unit layers, wherein n is greater than or equal to 3 and is less than or equal to 10; and Al composition in each layer of the n unit layers from bottom to top meets the need that x1)x2)... xn is less than or equal to 1 and is greater than or equal to 0.The buffer layer of the transmission-type GaN ultraviolet photocathode is designed and prepared by adopting the AlxGa1-xN in which the Al component content decreases gradually from 1 to 0, and growth interface stress between buffer a material and an emitting material is reduced by utilizing the composition graded mode, thus improving the interface characteristics of the transmission-type GaN ultraviolet photocathode, reducing the photoelectronic interface recombination rate and finally enhancing the photoemission quantum efficiency of the GaN ultraviolet photocathode.

A perfluorinated ion exchange membrane fusing-casting reinforced film includes reinforced substrate and ion change layer. Said reinforced substrate is a perfluorinated polymer biaxially oriented film. Said ion change layer is formed by solution casting method, having the perfluorinated ion exchange resin containing sulfonic acid group and/or carboxylic acid group as film forming resin. The film without abrupt interface between the ion exchange layers is formed by the means of solution casting and program coating so as to make the ion exchange group concentration between the ion exchange layers and different ion exchange layers achieve molecule horizontal combination and greatly improve the interface compatibility. The ion exchange membrane has a lower film resistor, a higher current efficiency, a high film planeness, extremely good mechanical strength and dimensional stability. The invention also provides producing method thereof.

The invention discloses a lithium-ion battery negative pole piece, and a preparation method and the application thereof. The surface of the base of the negative pole piece is coated with a coating which is prepared by a composite coating material; the composite coating material mainly comprises the following components in parts by weight: 20 to 40 parts of inorganic particles, 0.2 to 0.6 part of bonding agent, 4 to 8 parts of organic particles with swelling property, 0.4 to 0.8 part of plasticizer and 60 to 66 parts of solvent. Compared with the prior art, a novel bi-layer electrode material is adopted; an inorganic-organic protective layer is added on the basis of the conventional electrode material, so that the mechanical strength and the thermal stability of the battery are improved; the contact between a negative pole and a positive pole can be avoided under extreme conditions; therefore, a combustion phenomenon is avoided. Compared with the technology of a separation membrane which adopts an organic-inorganic layer, the purpose can be achieved by only coating a layer of coating at one end of the negative pole of the bi-layer electrode; the coating process is simplified; the cost is saved.

The invention relates to abandoned garlic residues which are chosen, refrigerated, stored, grinded, pulverized, vacuum cold dried and micronized, the effective ingredients are not be destroyed and lost definitely, the obtained submicron powder improves bioavailability, effects and range of application of the product for large superficial area and high tensiometric property, can be widely used in compound feed, feed additive and additive premix of marine products such as fowl and livestock.

The present invention relates to a blue-green sensitive transmission-type GaAlAs cathode of Al compositional gradient gradual change which is sensitive to blue-green light. The cathode is formed by a Corning 7056# glass substrate, a SiO2 protection layer, a Si3N4 anti-reflection layer, a Ga1-x1Alx1As window layer with Al constant composition, a Ga1-x2Alx2As emission layer with Al compositional gradient gradual change and a Cs/O activation layer arranged from down to up. The blue-green sensitive transmission-type GaAlAs cathode of Al compositional gradient gradual change prepares the blue-green sensitive negative electron affinity transmission-type GaAlAs photoelectric cathode based on the Ga1-xAlxAs ternary compound Al/Ga composition control technology, the III-V group compound material epitaxy technology, the photoelectric cathode module preparation technology and the ultrahigh vacuum laser technology, combines an electron multiplier to form a blue-green detector, and can be applied to the fields of sea detection, seabed imaging and the like.

The invention provides preparation methods of a SiC device gate dielectric layer and a SiC device structure. The preparation method of a gate dielectric layer includes the following steps: providing a SiC substrate, and placing the SiC substrate in an ALD reaction chamber; heating the ALD reaction chamber to a temperature suitable for the growth of a gate dielectric layer to be formed subsequently; and forming a gate dielectric layer on the surface of the SiC substrate through an ALD process. According to the technical scheme, Si atoms in a SiC epitaxial wafer are not consumed in the growth process of the gate dielectric layer, so that the phenomenon of C group aggregation at the interface of a gate dielectric film and SiC is avoided, and the interface property is improved. The gate dielectric layer is formed through an ALD technology, the thermal budget is low, and the device preparation process is simplified. The gate dielectric layer formed through the ALD technology has the advantages of high critical breakdown strength, low leakage and high dielectric constant. The strength of electric field introduced to the gate dielectric film can be greatly reduced, and breakdown of the gate dielectric can be avoided.

The invention discloses a low-loss, high-temperature and lead-free capacitor material and a preparation method thereof. The material is a two-phase complex formed by Bi(Mg<0.5> Ti<0.5>) O<3> and (Ba<0.8> Sr<0.2>)<(1-x)>Ce<2x/3>TiO<3>, 0<x<0.4, and x is a mole fraction. (Ba<0.8> Sr<0.2>)<(1-x)>Ce<2x/3>TiO<3> particles are coated with Bi(Mg<0.5> Ti<0.5>) O<3> powder through the gel process, and the molar ratio of Bi(Mg<0.5> Ti<0.5>) O<3> to (Ba<0.8> Sr<0.2>)<(1-x)>Ce<2x/3>TiO<3> is 0.5 to 1.5. The low-loss, high-temperature and lead-free capacitor material is good in temperature stability, and has low losses of a wide temperature area and a high dielectric constant.

The invention belongs to the micro-nano manufacturing related technical fields and discloses a magnesium-doped titanium dioxide based perovskite solar cell and a preparation method thereof. The methodincludes steps: (1) cleaning a conductive substrate; (2) adopting a water bath method for deposition of a rutile-phase magnesium-doped titanium dioxide film on the conductive substrate, and annealingat 100-120 DEG C to form a photo-anode; (4) performing spin coating of perovskite precursor solution on the surface of the photo-anode to obtain a photo-absorption layer; (5) performing evaporation of a copper phthalocyanine layer on the surface of the photo-absorption layer to form a hole transport layer; (6) adopting a silk-screen printing commercial carbon blade for film formation to form a carbon counter electrode layer on the hole transport layer. Production cost is reduced, cell performances and stability are remarkably improved, and large-scale commercial cell production is benefited.

The invention relates to a nitride semiconductor structure and a semiconductor light-emitting component. The nitride semiconductor structure is mainly characterized in that a stress control layer is arranged between a light-emitting layer and a p-type carrier barrier layer, the p-type carrier barrier layer is made of materials expressed by AlxGa1-xN, the x is larger than zero and smaller than one, the stress control layer is made of materials expressed by AlxInyGa1-x-yN, the x is larger than zero and smaller than one, the y is larger than zero and smaller than one, a sum of the x and the y is larger than zero and smaller than one, the light-emitting layer is of a multi-quantum-well structure formed by a plurality of alternated and stacked well layers and barrier layers, and one well layer is arranged between every two barrier layers. The semiconductor light-emitting component at least comprises the nitride semiconductor structure, an n-type electrode and a p-type electrode, and the n-type electrode and the p-type electrode supply power energy in a matched mode. In this way, the crystalline quality degradation problem, caused by lattice mismatching, of the p-type carrier barrier layer and the light-emitting layer can be solved through the stress control layer; meanwhile, compression stress caused by material differences and borne by the well layers can be reduced.

The invention discloses a multi-epitaxy super junction power MOSFET structure and a use method, and relates to the technical field of semiconductor field effect transistors. The multi-epitaxy super junction power MOSFET structure comprises an N-type substrate and a shell, the substrate is arranged in the shell, and the top end of the N-type substrate is fixedly connected with a first epitaxial layer; the top end of the first epitaxial layer is fixedly connected with a second epitaxial layer, two grooves are formed in the top end of the first epitaxial layer, and two through grooves are formed in the middle of the second epitaxial layer. According to the present invention, the N-type substrate is arranged, the first epitaxial layer is formed on the surface of the N-type substrate by means of an epitaxial process, the top end of the first epitaxial layer is etched to form the two grooves, a gate oxide layer is formed in the middle of the surface of the second epitaxial layer, and a polycrystalline silicon grid electrode is formed on the surface of the gate oxide layer, so that the design of double-layer epitaxy or even multi-layer epitaxy can be realized, the breakdown voltage and performance of an MOSFET can be greatly improved, the ideal resistivity matching exists between two layers or multiple layers, and the interface characteristics of the multiple stacked epitaxial layers can be improved.

The invention provides a method of preparing a silicon carbide MOSFET gate dielectric layer. The method comprises the following steps of: providing a SiC substrate, and placing the SiC substrate in anALD reaction chamber, raising the temperature of the ALD reaction chamber, sequentially and circularly growing a SiO2 film and an Al2O3 film on the surface of the SiC substrate by adopting an ALD process to form a gate dielectric layer, and performing annealing processing on the formed gate dielectric layer in an oxygen atmosphere. In the growth process of the gate dielectric layer, Si atoms in the SiC epitaxial wafer are not consumed, so that the phenomenon of C group aggregation at the interface of the gate dielectric layer and SiC is avoided, and the interface characteristic is improved; the gate dielectric layer is formed by using the ALD technology, the thermal budget is low, and the device preparation process is simplified; the gate dielectric layer formed by the ALD technology hasthe characteristics of high SiO2 breakdown strength, wide forbidden band width, high thermal stability and high Al2O3 dielectric constant at the same time, the electric field intensity introduced intothe gate dielectric film can be greatly reduced, gate dielectric breakdown is avoided, and gate leakage current is inhibited.

The invention provides a top gate type oxide array substrate and a preparation method thereof. The top gate type oxide array substrate comprises a substrate, a shading layer, a buffer layer, an activelayer, an etching barrier layer, a gate insulating layer, a gate layer, an interlayer insulating layer, a source and drain layer, a passivation layer and a pixel electrode layer which are stacked insequence, according to the preparation method, a silicon oxide film layer of which the film quality is close to that of a gate insulating layer is prepared on an active layer to serve as an etching barrier layer, patterning processing is carried out on the etching barrier layer and the active layer together, then the etching barrier layer is etched along with the gate insulating layer, and a parton a channel region of the active layer is reserved; by means of the protection of the etching barrier layer, the active layer is prevented from being eroded or damaged by chemicals in the yellow light and photoresist stripping process, the interface characteristic of the oxide active layer and the gate insulating layer is improved, and then the performance of the top gate type oxide array substrate is improved.

The invention provides an NPN type transverse GaN/SiGe HBT device structure. The structure comprises a sapphire substrate, wherein a SiON oxide layer is formed on a surface of the sapphire substrate;an emitter region, a base region and a collector region which have the same thickness and different widths are formed on the surface of the SiON oxide layer from left to right; N-type doped GaN layersare deposited in the emitter region and the collector region; a P-type doped Si1-rGer layer of which a Ge component is gradually increased from left to right grows in the base region, and r is greater than 0 and less than 1; and electrode leading-out layers of an emitting electrode, a base electrode and a collecting electrode correspondingly grow on the surfaces of the emitting region, the base region and the collector region, all the electrodes are made of the same metal silicide, and the adjacent electrode regions are insulated and isolated through isolation oxide layers. The invention further provides a manufacturing method of the device structure. In the invention, an interface characteristic of a GaN layer and a SiGe layer can be improved, electron mobility of the base region is improved, transition time of the base region is reduced, a frequency of the device is improved, frequency characteristics are more excellent, and meanwhile, a switching speed and a cut-off frequency of the device can be improved by utilizing a metal silicide layer.

The invention belongs to the technical field of lithium metal interface modification, and discloses a lithium negative electrode coated with a LiF film as well as a preparation method and applicationof the lithium negative electrode. The lithium negative electrode coated with the LiF film is prepared by the following steps: dissolving a fluorinating agent in a polar aprotic organic solvent, and preheating at 25-300 DEG C in an inert atmosphere under a sealed condition to prepare a fluorinating agent solution; putting the polished lithium sheet into a fluorinating agent solution, and reactingat 25-300 DEG C in an inert atmosphere; and cleaning with an organic solution, and drying at 50-150 DEG C to obtain the product. The fluorinating agent is used for fluorinating the lithium negative electrode, the LiF film is generated on the surface of the lithium negative electrode in situ, surface impurities are removed by the organic solvent after the reaction is finished to obtain the compactlithium negative electrode coated with the LiF film, and the LiF film effectively improves the interface characteristic of the lithium negative electrode, and inhibits the generation of lithium dendrites. And the coulombic efficiency and the cycling stability of the lithium negative electrode in the charging and discharging process are improved.

The invention discloses a nylon 66 composite material for a connecting rod sleeve. The nylon 66 composite material is prepared from raw material components such as a PA66 base material, carbon fiber,an interfacial compatibilizer, a dispersant, a chain extender, carbon black, an anti-wear agent and an additive; the obtained nylon 66 composite material is light in specific weight, has very strong designability, not only is easy to mould, but also is uniform in material after moulding, and has various significantly improved properties in lubricity, wear resistance, impact resistance, high temperature resistance, corrosion resistance, ageing resistance and the like. In addition, by a preparation method of the nylon 66 composite material, provided by the invention, the raw material mixing sequence is clarified, and especially after the carbon fiber is mixed with the specific interfacial compatibilizer and the matching dispersant in a dry state, melt extrusion is performed through a single-screw extruder and then feeding is performed through a side feed port, so that processing damage such as surface burring and easy tearing and layering due to addition of the carbon fiber is solved, performance advantages of the carbon fiber are fully played, the preparation limitation is broken through, and thus the high strength and the high performance of the nylon 66 composite material are guaranteed.