The invention relates to an n-Ge-i-Ge-p-Si structural
waveguide-type photoelectric
detector based on an LRC technology and a manufacturing method. The method comprises the following steps of manufacturing a
SOI substrate;
etching and forming a
waveguide area, a
coupling structure and a device poriton on a top layer Si layer surface respectively; growing a Ge material on a surface of the device portion and manufacturing a
protection layer; heating a whole substrate, using a
laser technology to crystallize the whole substrate, cooling and making the Ge material form a
crystallization Ge layer, and removing the
protection layer; growing a first Ge layer and a second Ge layer on a
crystallization Ge layer surface; manufacturing a
passivation layer on the whole substrate, using a selective
etching technology to etch the
passivation layer so as to form a P-type
contact hole on the top layer Si layer surface and an N-type
contact hole on a second Ge layer surface; and depositing
metal in theP-type and N-type contact holes and completing
interconnection so as to finally form the photoelectric
detector. In the invention, by using the photoelectric
detector, dark currents can be reduced, aconflict of a high speed response and
quantum efficiency in a vertical light-entering-type
optical detector is overcome, simultaneously a high speed and high
quantum efficiency are guaranteed.