Nitride semiconductor structure and semiconductor light-emitting component

Abstract

The invention relates to a nitride semiconductor structure and a semiconductor light-emitting component. The nitride semiconductor structure is mainly characterized in that a stress control layer is arranged between a light-emitting layer and a p-type carrier barrier layer, the p-type carrier barrier layer is made of materials expressed by AlxGa1-xN, the x is larger than zero and smaller than one, the stress control layer is made of materials expressed by AlxInyGa1-x-yN, the x is larger than zero and smaller than one, the y is larger than zero and smaller than one, a sum of the x and the y is larger than zero and smaller than one, the light-emitting layer is of a multi-quantum-well structure formed by a plurality of alternated and stacked well layers and barrier layers, and one well layer is arranged between every two barrier layers. The semiconductor light-emitting component at least comprises the nitride semiconductor structure, an n-type electrode and a p-type electrode, and the n-type electrode and the p-type electrode supply power energy in a matched mode. In this way, the crystalline quality degradation problem, caused by lattice mismatching, of the p-type carrier barrier layer and the light-emitting layer can be solved through the stress control layer; meanwhile, compression stress caused by material differences and borne by the well layers can be reduced.

Description

technical field

[0001] The present invention relates to a nitride semiconductor structure and a semiconductor light-emitting element, in particular to a kind of aluminum alloy arranged between the light-emitting layer and the p-type carrier blocking layer. x In y Ga 1-x-y The invention relates to a nitride semiconductor structure and a semiconductor light-emitting element of a stress control layer composed of N materials, belonging to the field of semiconductor technology. Background technique

[0002] In recent years, the application of light-emitting diodes has become more and more extensive, and has become an indispensable and important component in daily life; and light-emitting diodes are expected to replace today's lighting equipment and become the solid-state lighting components of the new generation in the future. Light-emitting diodes with high efficiency and higher power will be the future trend; nitride LEDs have become one of the latest emerging optoelectronic ...

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