Nitride semiconductor structure and semiconductor light-emitting component

Abstract

The invention relates to a nitride semiconductor structure and a semiconductor light-emitting component. The nitride semiconductor structure is mainly characterized in that a light-emitting layer is arranged between an N-type semiconductor layer and a P-type semiconductor layer, and a quaternary carrier active layer is arranged between the light-emitting layer and the P-type semiconductor layer and is made of AlxInyGa1-x-yN, wherein the x and the y are numerical values meeting the conditions that the x is larger than zero and smaller than one, the y is larger than zero and smaller than one, and a sum of the x and the y is larger than zero and smaller than one. The semiconductor light-emitting component is characterized in that the nitride semiconductor structure, an N-type electrode and a P-type electrode are arranged on a substrate, and the N-type electrode and the P-type electrode supply power energy in a matched mode. In this way, compared with a publicly-known P-AlGaN electronic barrier layer, the nitride semiconductor structure and the semiconductor light-emitting component can improve the multi-quantum-well structure entered effect of electron holes, and meanwhile the aim that electrons are prevented from entering the P-type semiconductor layer by restraining electron escaping is achieved; the electron and electron hole combination rate is increased, and the light-emitting efficiency is further improved.

Description

technical field [0001] The present invention relates to a nitride semiconductor structure and a semiconductor light-emitting element, in particular to an aluminum indium gallium nitride Al x In y Ga 1-x-y The invention relates to a nitride semiconductor structure of a quaternary carrier active layer of N and a semiconductor light-emitting element, belonging to the technical field of semiconductors. Background technique [0002] In recent years, due to the advancement of epitaxy and process technology, light-emitting diodes have become one of the most promising solid-state lighting sources; among them, light-emitting diodes with gallium nitride (GaN) as the main manufacturing material have now become solid-state lighting (Solid- Statelighting (SSL) is one of the important components in the construction; gallium nitride LED has become one of the latest optoelectronic semiconductor materials due to its small size, no mercury pollution, high luminous efficiency and long life, ...

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Problems solved by technology

[0005] The existing electron blocking layer is formed of a P-type AlGaN layer with a relatively large energy gap, thereby preventing electrons injected from the N-type semiconductor layer from overflowing into the P-type semiconductor layer, so that the electrons can be effectively confined in the quantum well layer , to improve the internal quantum efficiency of light-emitting diodes; however, although the electron blocking layer of P-AlGaN has a relatively large energy gap to prevent electron overflow, it also leads to a relatively poor effect of hole injection into the light-emitting layer; moreover , because the multiple quantum well structure is generally formed by the quantum well layer of InGaN and the quantum barrier layer of GaN, but in essence, the electron blocking layer of P-AlGaN and the quantum barrier layer of GaN have a very high lattice mismatch , so that the InGaN quantum well layer will be seriously affected by compressive stress due to lattice mismatch, and this compressive stress changes the energy band structure of each quantum well layer, so that the electrons and holes in the quantum well layer Spatially separated from each other, resulting in a reduction in the luminous efficiency of the light-emitting diode; moreover, the above-mentioned compressive stress will also deteriorate the interface characteristics between the adjacent GaN quantum barrier layer and the InGaN quantum well layer, thereby losing carriers at the interface, and also Affects the luminous efficiency of light-emitting diodes

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