Nitride semiconductor structure and semiconductor light-emitting component

Abstract

The invention relates to a nitride semiconductor structure and a semiconductor light-emitting component. The nitride semiconductor structure is mainly characterized in that a light-emitting layer is arranged between an N-type semiconductor layer and a P-type semiconductor layer, and a quaternary carrier active layer is arranged between the light-emitting layer and the P-type semiconductor layer and is made of AlxInyGa1-x-yN, wherein the x and the y are numerical values meeting the conditions that the x is larger than zero and smaller than one, the y is larger than zero and smaller than one, and a sum of the x and the y is larger than zero and smaller than one. The semiconductor light-emitting component is characterized in that the nitride semiconductor structure, an N-type electrode and a P-type electrode are arranged on a substrate, and the N-type electrode and the P-type electrode supply power energy in a matched mode. In this way, compared with a publicly-known P-AlGaN electronic barrier layer, the nitride semiconductor structure and the semiconductor light-emitting component can improve the multi-quantum-well structure entered effect of electron holes, and meanwhile the aim that electrons are prevented from entering the P-type semiconductor layer by restraining electron escaping is achieved; the electron and electron hole combination rate is increased, and the light-emitting efficiency is further improved.

Description

technical field [0001] The present invention relates to a nitride semiconductor structure and a semiconductor light-emitting element, in particular to an aluminum indium gallium nitride Al x In y Ga 1-x-y The invention relates to a nitride semiconductor structure of a quaternary carrier active layer of N and a semiconductor light-emitting element, belonging to the technical field of semiconductors. Background technique [0002] In recent years, due to the advancement of epitaxy and process technology, light-emitting diodes have become one of the most promising solid-state lighting sources; among them, light-emitting diodes with gallium nitride (GaN) as the main manufacturing material have now become solid-state lighting (Solid- Statelighting (SSL) is one of the important components in the construction; gallium nitride LED has become one of the latest optoelectronic semiconductor materials due to its small size, no mercury pollution, high luminous efficiency and long life, ...

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Problems solved by technology

[0005] The existing electron blocking layer is formed of a P-type AlGaN layer with a relatively large energy gap, thereby preventing electrons injected from the N-type semiconductor layer from overflowing into the P-type semiconductor layer, so that the electrons can be effectively confined in the quantum well layer , to improve the internal quantum efficiency of light-emitting diodes; however, although the electron blocking layer of P-AlGaN has a relatively large energy gap to prevent electron overflow, it also leads to a relatively poor effect of hole injection into the light-emitting layer; moreover , because the multiple quantum well structure is generally formed by the quantum well layer of InGaN and the quantum barrier layer of GaN, but in essence, the ele

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