24results about How to "Reduce compressive stress" patented technology

The invention relates to the technical field of semiconductor devices, in particular to an epitaxial structure of an LED quantum well and a growth method of the epitaxial structure. Comprising an active layer, the active layer is formed by periodically stacking a plurality of unit structures, each unit structure comprises a quantum well layer, a cover layer and a quantum barrier layer which grow in sequence, and the quantum well layer comprises a superlattice structure formed by an indium gallium nitride layer and a processing layer which grow alternately. The growth time of indium gallium nitrogen is short, the thickness of a single layer is 5%-15% of the thickness of traditional indium gallium nitrogen, the pressure stress borne by indium gallium nitrogen is greatly reduced, and the crystal quality of the quantum well is improved. Moreover, after the indium gallium nitrogen grows for a short time, the ammonia gas and indium are kept for treatment, so that the nitrogen vacancy defect can be reduced, the decomposition of indium in the indium gallium nitrogen can be reduced, and the defects in a quantum well are reduced. According to the invention, the crystal quality of the quantum well is obviously improved, and the luminous efficiency of an LED under low current density is obviously improved.

The invention relates to the technical field of rock-soil anchoring engineering, in particular to a tension-compression composite type anti-floating anchor rod which comprises a water stop ring, an oval bearing body, an end cap, a threaded steel bar, a first isolation sleeve and an assembly type support, the water stop ring is installed at a drilling hole opening, and the threaded steel bar is sequentially connected with the oval bearing body, the assembly type support and the end cap from top to bottom. The bottoms of the twisted steel bars are fixedly mounted in the end caps; the oval bearing body comprises a bearing plate and a bearing cap which are fixedly connected, through rib penetrating holes are formed in the bearing plate and the bearing cap, the horizontal section of the bearing plate is oval, and a convex face is arranged on the surface of the bearing plate; by using the oval bearing body, the pressure bearing area is reduced, and the accumulation risk of muck on the bearing body can be obviously reduced; the oval bearing body adopts the convex surface design, when part of muck falls into the drill hole and falls onto the end face of the oval bearing body, the muck easily slides off from the convex surface, and accumulation is avoided.

The invention belongs to the field of semiconductor materials, and particularly relates to a UVB LED epitaxial structure and a preparation method thereof. The UVB LED epitaxial structure sequentially comprises a plain film substrate, a PVDAlN layer, an AlN high-temperature layer, an Mg-doped AlN high-temperature layer, an AlGaN / AlN superlattice transition layer, an n-type AlGaN layer, an Al < x > Ga < 1-x > N / Al < y > Ga < 1-y > N multi-quantum well active layer, an Mg-doped p-type AlGaN barrier layer, an Mg-doped p-type AlGaN layer and an Mg-doped p-type GaN layer from top to bottom. According to the method, the AlN template is subjected to doping treatment through Mg, so that the in-plane lattice constant of the Mg-doped AlN template is increased, lattice mismatch and threading dislocation between the AlN template and the upper AlGaN layer are successfully improved, a low-internal-stress efficient UVB-LED is developed, and the optical performance of the UVB-LED is improved.

The invention relates to a high-bending-formability heterogeneous magnesium alloy multilayer composite plate and a preparation method thereof, the composite plate adopts a three-layer structure, and comprises a middle AZ31 alloy layer and magnesium rare earth alloy layers on the two sides of the middle AZ31 alloy layer. The preparation method comprises the following steps: (1) carrying out homogenization treatment on AZ31 alloy and magnesium rare earth alloy cast ingots, processing the cast ingots into cuboid blanks with preset sizes, and removing surface oxidation films at the same time; (2) the blanks are stacked according to the mode of magnesium rare earth, AZ31 and magnesium rare earth, and the blanks are heated to 330-370 DEG C; and (3) extruding by using a symmetric extrusion die to obtain the plate with a three-layer composite structure. A channel of the extrusion die is composed of an inlet section, a conical transition section and an outlet section, and the included angle of the conical transition section ranges from 70 degrees to 110 degrees. The tension and compression asymmetry in the bending process of the plate is weakened through the multi-layer heterostructure, and therefore the forming performance of the plate is remarkably improved. The prepared composite board is subjected to a bending performance test, and the result shows that the formability of the composite board is superior to that of a single alloy board.

The invention relates to a construction method for a large-span steel box girder of an overpass subway station. According to the hoisting scheme, after a segment is hoisted, the additional stress on an overpass station area is smaller than the foundation bearing capacity of the overpass station area through simulation calculation. According to the hoisting scheme, the number of the assembling support assemblies and the number of the sections of the steel box girders above the overcrossing station area and the installation area of the assembling support assemblies on the overcrossing station area are included; the assembling support assembly comprises a steel pipe support and a strip-shaped foundation. According to the hoisting scheme, an assembling support assembly is arranged on the installation area of the overpass station area, and then a crane carries out hoisting outside the overpass station area; the contact area between the strip-shaped foundation and the ground is increased, pressure stress is dispersed, the weight and length of each hoisting section are reduced by simulating and calculating the number of the assembly support assemblies and the sections in advance, the pressure stress of a steel beam on a subway top plate in the actual construction process is effectively reduced, and the construction efficiency is improved. The problem that a large-span steel box girder cannot be implemented due to overlarge load of a subway station roof is solved, and the engineering cost is reduced.

The present invention relates to the technical field of building materials (IPC classification number is C04B28 / 04), and in particular to a high-temperature resistant inorganic artificial stone and a preparation method thereof, comprising an inorganic artificial stone substrate and a high-temperature resistant heat-insulating coating coated on the surface of the inorganic artificial stone substrate. In the present invention, the simultaneous addition of fillers, coupling agents, and expansion agents can form chemical bonds between cement gel products and fibers, can enhance the bonding force between fibers and aggregates and cement, improve the flexural strength and toughness of the board, resist high-temperature deformation and cracking of the board, and the addition of thickeners makes the board have higher conjunctival strength and adhesion, can improve the density of the board, and improve the working performance of the board. The surface heat-resistant temperature of the prepared inorganic artificial stone can reach 300-400°C, which broadens the application range of the inorganic artificial stone.

The invention discloses a dry white wine preparation process, and relates to the technical field of wine production. A working table and a filling mechanism are matched to complete preparation of the dry white wine, and the filling mechanism is installed on the upper end face of the working table and comprises a linkage part which is arranged on the rear portion of the upper end face of the working table and used for linking a combined plug cover part and a centrifugal cleaning part. A second electric telescopic rod used for driving the annular plug to move downwards to further push the wooden plug so that the wooden plug can be completely plugged into a wine bottle opening is jointly and fixedly connected between the transverse section of the L-shaped plate and the annular plug. The bottle opening is effectively prevented from being broken and the wooden plug is effectively prevented from being damaged by plugging the wooden plug twice, the sealing performance and the storage quality are ensured, and a flexible brush strip of the centrifugal cleaning part is combined with a water column, so that the wine bottle is efficiently cleaned.

The utility model provides a combined type side bearing and a side bearing assembly. The combined type side bearing comprises a side bearing upper body and side bearing branches arranged on the two opposite sides of the side bearing upper body. Each side bearing branch comprises an inner side rubber body, a partition plate, an outer side rubber body and an end plate which are sequentially arranged in the direction away from the side bearing upper body and fixedly connected in sequence. In the direction away from the side bearing upper body, the inner side rubber body and the side bearing upper body are arranged in a staggered mode, the outer side rubber body and the inner side rubber body are arranged in a staggered mode, and the side bearing upper body, the inner side rubber body and the outer side rubber body are gradually lowered in the height direction. One side of the compression spring abuts against the side bearing upper body, and the other side of the compression spring abuts against a side bearing box used for containing the combined type side bearing. According to the technical scheme, after a vehicle body is completed, when the side bearing upper body is compressed downwards, the side bearing upper body extrudes the inner side rubber body and the outer side rubber body, then the end plate is extruded outwards, a longitudinal gap between the elastic side bearing and the side bearing box can be eliminated, and the performance of the side bearing is improved.

The present invention provides a tension-controllable upper pull rod scaffolding convenient for random inspection, comprising an upper hanging pull seat assembly A, a pull-tab closed hook pull rod assembly, an I-beam assembly F, and an arc flower basket assembly D; the pull-tab closed hook pull rod assembly comprises an upper pull-tab closed hook pull rod B and a lower pull-tab closed hook pull rod C; the upper hanging pull seat assembly A is connected to an anchor of a structural member under construction; the upper pull-tab closed hook pull rod B and the lower pull-tab closed hook pull rod C are respectively connected to the upper hanging pull seat assembly A and the I-beam assembly F to realize an openable and closable hook connection; the arc flower basket assembly D is connected between the upper pull-tab closed hook pull rod B and the lower pull-tab closed hook pull rod C to realize controllable tension of the upper pull frame. The present invention realizes a tension-controllable upper pull rod scaffolding convenient for random inspection.

The invention discloses an epitaxial structure, a preparation method thereof and a light-emitting diode, and belongs to the technical field of semiconductors. The epitaxial structure comprises a substrate, a light-emitting layer formed on the substrate, an N-type current expansion layer and a P-type current expansion layer which are formed on the two sides of the light-emitting layer, and an electron blocking layer formed between the light-emitting layer and the P-type current expansion layer. Wherein the light-emitting layer comprises at least one pair of quantum well layer In < x > Ga < 1-x > N and quantum barrier layer In < y > Ga < 1-y > N, and y < lt > is greater than or equal to 0; x < 1. The material components of the quantum well layer InxGa1-xN and the quantum barrier layer InyGa1-yN both comprise indium, gallium and nitrogen, so that lattice mismatch is reduced, compression stress caused by lattice mismatch is reduced, the piezoelectric polarization effect is weakened, meanwhile, the recombination efficiency of current carriers is improved, the external quantum efficiency is improved, and the performance of the light emitting diode is improved.

The utility model discloses a cylinder inner supporting assembly of a high-temperature electric heater, which comprises an electric heater cylinder, an electric heater internal part is arranged in the electric heater cylinder, a supporting ring plate is arranged on the inner circumferential side of the electric heater cylinder, a supporting rib plate connected with the electric heater cylinder is arranged at the bottom of the supporting ring plate, and a supporting rib plate is arranged on the supporting rib plate. An inner part supporting ring is arranged on the outer side of the electric heater inner part, a transition ring is arranged between the supporting ring plate and the inner part supporting ring, and ceramic fiber blankets and pressing rings are arranged at the connecting positions of the supporting ring plate and the transition ring and the connecting positions of the inner part supporting ring and the transition ring. The transition ring is additionally arranged between the supporting ring plate and the inner part supporting ring, so that the supporting ring plate is completely wrapped by the inner heat preservation layer, heat transferred to the supporting ring plate is reduced, the temperature of the supporting ring plate and the temperature of the cylinder body of the electric heater are reduced, the supporting ring plate and the shell of the cylinder body of the electric heater are made of the same material, the material selection difficulty is reduced, and the dissimilar steel welding problem is avoided.

The invention discloses a gallium nitride-based red light emitting diode epitaxial structure and preparation and application thereof. The epitaxial structure sequentially comprises a sapphire substrate, a low-temperature GaN nucleating layer, a high-temperature non-doped GaN buffer layer, an n-type GaN layer, a low-temperature GaN V-type layer, an In < x > < 1 > Ga < 1-x > < 1 > N / GaN stress release layer, an In < x > Ga < 1-x > N / In < y > Ga < 1-y > N multi-quantum well light-emitting layer structure MQW, a composite protection layer, a p-type Al < y > < 1 > Ga-y < 1 > N electron barrier layer, a high-temperature p-type GaN layer and a p-type InGaN contact layer from bottom to top. The problem that the quantum efficiency of an existing InGaN-based red light LED is very low is solved. According to the invention, a composite protection layer with a stress release effect is grown between a high indium (In) component red light active region and a high-temperature p-type layer. Compared with an LED sample without a composite protection layer, the internal quantum efficiency is remarkably improved, and the maximum internal quantum efficiency is up to 110%.

The embodiment of the utility model discloses an MEMS chip and an electronic device, the MEMS chip comprises a substrate, and a vibrating diaphragm, a support layer and a back pole plate which are arranged at the same side of the substrate, the vibrating diaphragm, the support layer and the back pole plate are sequentially laminated in the thickness direction of the substrate, the support layer comprises a first part and a second part filled in the first part, the expansion coefficient of the first part is smaller than that of the second part. According to the MEMS chip, the supporting layer is arranged, so that the overall stress state of the supporting layer can be improved, the total pressure stress of the side, provided with the vibrating diaphragm, of the substrate is reduced, and the overall warping state of the MEMS chip is improved. Compared with the prior art in which the warping mode of the MEMS chip is reduced by increasing the thickness of the back polar plate, the MEMS chip has the advantages that the original size of the MEMS chip is not changed, so that the whole chip becomes heavier and thicker, the heat conduction performance of the chip is not reduced, and the performance and the service life of an electronic element are not influenced.

The invention relates to a mixed section middle tower which comprises a steel tower column. The top end of the steel-concrete combined tower column is fixed with the bottom end of the steel tower column, and an upper joint surface is formed at the fixed part; and the top end of the concrete tower column is fixed with the bottom end of the steel-concrete combined tower column, and a lower joint surface is formed at the fixed part of the concrete tower column and the bottom end of the steel-concrete combined tower column. The upper portion of the tower column is of a steel structure, the middle of the tower column is of a steel-concrete combined structure, and the lower portion of the tower column is of a reinforced concrete structure. The tower column has the advantages that a force transmission anchoring structure is located in a main tower, durability is good, tower column outer contour transition is even and smooth, appearance is attractive, tower column size and rigidity balance is good, a combination section is relatively simple in structure, and construction is convenient and fast.

The utility model relates to an implant capable of relieving neck pressure, which comprises a main body, and the main body is divided into a blocking section, a neck section and a body section along the axial direction; the thread structure comprises a first thread and a second thread which are formed in the outer surface of the neck area and the outer surface of the body area respectively, the first thread is provided with a top face, a first cutting groove is formed in the top face in the spiral direction of the first thread, and a plurality of second cutting grooves are formed in the first thread in the axial direction; the depth of the second cutting groove is larger than that of the first cutting groove and smaller than the height of the first thread. And the blocking mechanism comprises a blocking groove annularly formed in the blocking section of the main body, and the blocking groove communicates with the thread groove of the first thread. By means of the arrangement, the first cutting groove and the second cutting groove are formed in the first thread, so that stress borne by bone tissue at the neck section is reduced, and meanwhile the blocking groove is matched to block germs and reduce the inflammation probability.

The utility model provides a prestressed concrete special-shaped precast pile. The prestressed concrete special-shaped precast pile comprises a pile body, an upper end plate and a lower end plate, the pile body is provided with at least one square pile section, at least two round pile sections and an expanded end section; the square pile sections and the circular pile sections are alternately arranged; the expanded end section is located on the lowermost layer. The prestressed concrete special-shaped precast pile is stable in structure, reasonable in design, large in contact area between the pile body and a soil layer, large in pile side friction resistance and capable of effectively improving bearing capacity and pulling resistance.

The utility model discloses an eccentric bolt, and relates to the field of eccentric bolts, the eccentric bolt comprises a bolt head, the bolt head is provided with threads, one end of the bolt head is fixedly provided with a head plate, the bolt head is provided with a circular groove, and the tail end of the bolt head is in threaded connection with a nut. On the basis of an existing bolt head, the circular groove is cut, so that the bolt head can be placed in the circular groove for installation and positioning, the nut is screwed at the tail end, overall installation and positioning can be completed, convenience and flexibility during installation can be achieved, and the installation efficiency is improved. Under the matching action of the first reinforcing teeth and the like on the first gasket, the contact area can be increased, the pressure stress of the pressure-bearing surface can be reduced, the surface of a connected piece is protected, meanwhile, the excellent durability is achieved, and under the strong vibration environment, the service life of the connected piece is prolonged. The anti-loose gasket can effectively keep the clamping force of the connecting piece, and bolt looseness caused by vibration is prevented.

The invention relates to an off-the-road tire which comprises a tire body, a steel wire ring and filling rubber, and the tire body comprises a main tire body and a turn-up tire body; at the bead toe, the main body tire body bypasses the bead ring to form a reversely extending turn-up tire body, and the bead toe is wrapped by the bead ring through the main body tire body and the turn-up tire body; filling rubber is filled between the turn-up tire body and the main tire body; and the end point of the turn-up tire body is not lower than the horizontal axis of the off-the-road tire. The tire performance is improved by optimizing the sidewall profile and the structure of the off-the-road tire, a turn-up endpoint extends to a position above a horizontal axis by researching a turn-up technology, and further, the invention further relates to structural improvement of filling rubber, so that the compression stress of a turn-up tire body is reduced, the durability of the tire is improved, and the service life of the off-the-road tire is prolonged. The service life of tires is prolonged.

The invention discloses a low-dielectric-absorption low-mismatch precision linear MIM capacitor and an integration technology. The integration technology comprises the following steps: 1) forming an active region and an isolation field oxygen region; and 2) forming a thick gate oxide layer and a thin gate oxide layer. And 3) depositing a polysilicon layer, and constructing a polysilicon gate of the MOS tube. And 4) completing photoetching injection of the source electrode and the drain electrode of the multi-mode gate oxide high-low voltage BiCMOS / CMOS. And 5) improving the flatness of the lower surface area of the metal film resistor through chemical mechanical planarization. And (6) sputtering a high-resistivity microcrystalline titanium film on the lower electrode of the metal MIM capacitor by a PVD (Physical Vapor Deposition) method. And (7) depositing PECVD (plasma enhanced chemical vapor deposition) silicon nitride (Si < x > N < y > Hz) on a metal MIM capacitor dielectric layer. And (8) sputtering a high-resistivity microcrystalline titanium film on the upper electrode of the metal MIM capacitor by a PVD (Physical Vapor Deposition) method. And 9) sputtering an aluminum-copper film layer and completing the etching processing of a metal connecting wire. According to the invention, the precision matching problem of the metal MIM capacitor is optimized, the packaging function density and the device density of the integrated circuit are improved, and the miniaturization and the light weight of the high-performance integrated circuit are promoted.

The present invention provides a monomer self-polymerization-assisted synthesis perovskite solar cell and a preparation method thereof, specifically, adding an easily polymerizable monomer to a cesium bromide aqueous solution, then spin-coating it on a lead bromide film loaded with a titanium dioxide mesoporous electronic layer, introducing a monomer self-polymerization-assisted grain growth strategy, synthesizing a perovskite film by a two-step spin coating method, and finally scraping a carbon electrode to assemble into a solar cell. The present invention adopts a two-step method that can accurately control the raw material ratio, uses monomer additive self-polymerization to regulate the perovskite crystallization speed, the electron-donating group of the monomer passivates the metal ion state defects of the perovskite, and the monomer self-polymerization provides space for the growth of grains, eliminates the stress generated during the annealing process of the perovskite film, and obtains a high-purity perovskite film with a large grain size, low defect state density, high energy level matching and low surface roughness, thereby improving the photovoltaic performance of the battery. The present invention has simple preparation steps, high repeatability, green economy, and commercial application prospects.

Some embodiments of the present disclosure provide a semiconductor device including a contact electrically connected to a Group III-V semiconductor body layer. The metal layer stack of the contact comprises a plurality of metal layers and a metal nitride cap layer located at the topmost layer of the metal layer stack, the plurality of metal layers comprise a metal bottom layer located at the bottommost layer and having a metal element, and the metal nitride cap layer has a nitride of the metal element. And the thickness of the metal bottom layer is greater than that of the metal nitride cover layer, so that the contact element can relieve the stress of the main body layer and reduce the risk of material fracture in the semiconductor device.

A window, a display device including the window, and an electronic device including the display device are disclosed. The window includes: a glass substrate; a folding region including: a first-1 portion foldable relative to a folding axis extending in a first direction and having a uniform thickness; and a non-folding region defined to be adjacent to (or adjacent to) the folding region in a second direction perpendicular to the first direction in the unfolded state of the window, and including: a second-1 portion having a thickness that increases with increasing distance from the first-1 portion.

The invention provides a fuel gas generator capable of adapting to high overload and a solid rocket ramjet engine, and relates to the technical field of solid rocket ramjet engines, the fuel gas generator comprises a shell filled with grains, and a gas outlet is formed in one end of the shell; a buffering assembly is further arranged and comprises an elastic part and a limiting part which are fixed to each other, the limiting part abuts against the inner wall of the end, close to the air outlet, of the shell, the elastic part is arranged on the side, away from the air outlet, of the limiting part and abuts against the grain, and the elastic part and the limiting part are jointly provided with a first channel; by arranging the elastic part and the limiting part, the limiting part limits the elastic part, the elastic part buffers the grain through elastic deformation, the first channel communicates with the space on one side of the grain and the air outlet and is used for igniting the grain and circulating fuel gas after launching, and the elastic part is pressed to deform into a closed plane structure; the first channel is cut off, meanwhile, the end face of the grain can be evenly stressed, compression stress borne by the grain is reduced, and the whole structure of the grain is prevented from being damaged.

The application relates to a defibrillator, comprising: an energy storage module comprising at least two energy storage devices; an energy storage selection module for selecting the energy storage devices of a charge-discharge circuit of the defibrillator according to an energy level; and a control module configured to: in a first energy level, control the energy storage selection module to connect a first preset at least one energy storage device to the charge-discharge circuit, the total energy storage capacity of the first preset energy storage device being a first energy storage capacity; and in a second energy level, control the energy storage selection module to connect a second preset at least one energy storage device to the charge-discharge circuit, the total energy storage capacity of the second preset energy storage device being a second energy storage capacity, the second energy storage capacity being greater than the first energy storage capacity; wherein the first energy level is in a first energy range, and the second energy level is in a second energy range. The defibrillator with a single energy storage structure in the related art cannot simultaneously meet the requirements of precise defibrillation in a low-energy scene and effective defibrillation in a high-energy scene, thereby affecting the defibrillation effect and reducing the defibrillation success rate.