362results about How to "Reduce compressive stress" patented technology

Apparatus, systems and methods for improving strength of a thin glass member for an electronic device are disclosed. In one embodiment, the glass member can have improved strength characteristics in accordance with a predetermined stress profile. The predetermined stress profile can be formed through multiple stages of chemical strengthening. The stages can, for example, have a first ion exchange stage where larger ions are exchanged into the glass member, and a second ion exchange stage where some of the larger ions are exchanged out from the glass member. In one embodiment, the glass member can pertain to a glass cover for a housing for an electronic device. The glass cover can be provided over or integrated with a display.

A chemically toughened ultrathin glass is provided. The glass has a thickness less than 500 μm and a surface compressive layer having a depth of at most 30 μm. The toughened ultrathin glass sheet is more flexible and has extraordinary thermal shock resistance with the glass being easier to handle for processing.

A bidirectional converter circuit includes a voltage source which provides an input voltage, an energy storage set connected to the voltage source and receives the input voltage, a switch set connected to the energy storage set, wherein the switch set includes a first switch and a second switch; an operating switch set connected to the switch set, wherein the operating switch set includes a first operating switch, a second operating switch, a third operating switch and a fourth operating switch. The bidirectional converter further includes a blocking capacitor set and a (input/output) capacitor set. Wherein, the blocking capacitor set is connected to the switch set and the operating switch set. The first operating switch and the second operating switch are driven complementarily with the first switch, and the third operating switch and the fourth operating switch are driven complementarily with the second switch.

A coated chemically strengthened flexible thin glass includes a coating of an adhesive layer in the form of a silicon mixed oxide layer, which contains or consists of a silicon oxide layer in combination with at least one oxide of aluminum, tin, magnesium, phosphorus, cerium, zirconium, titanium, cesium, barium, strontium, niobium, zinc, or boron, and magnesium fluoride, such as at least aluminum oxide.

A semiconductor device according to the present invention includes a semiconductor substrate, and an interlayer dielectric film, formed on the semiconductor substrate, having a multilayer structure of a compressive stress film and a tensile stress film.

Methods for attaching a subgasket to an ionomer membrane, wherein the methods provide for the precise location of the subgasket relative to the other component edges of the fuel cell, such as the catalyst layers, so as provide the functionality required to extend the ionomer membrane life and prevent damage to the ionomer membrane during the assembly process.

The method provided by the invention comprises the following steps: a machine body, a walking part, a lifting part, a reciprocating pounding part and the like are arranged; a pounding guide element and the like are arranged on a pounding guide device; pounding heads are arranged at two ends of the pounding guide element, so that a power pounding element drives the pounding guide element; the reciprocating pounding part is arranged on the lifting part; the lifting part is arranged on the machine body; and the walking part drives the machine body to move ahead and retreats so as not to turn the machine body to excavate and drop materials forward and backward. Equipment provided by the invention comprises the machine body, the walking part, the lifting part, the reciprocating pounding part and the like; the reciprocating pounding part comprises the pounding guide device, the pounding driving device and the like; the pounding heads are both arranged at two ends of the pounding guide element; the pounding driving device comprises the power pounding element and the like; the power pounding element drives the pounding guide element to move in a reciprocating mode; the pounding guide element drives the pounding heads to pound; the reciprocating pounding part is arranged on the lifting part; the lifting part is arranged on the machine body; the walking part drives the machine body to move ahead and retreat so as not to turn the machine body to excavate and drop materials forward and backward.

The invention discloses an internal high pressure forming die and method of an elbow T-branch pipe, relates to an internal high pressure forming die and method of a T-branch pipe, and aims to solve the problems that the bottom of a main cavity of an existing internal high pressure forming die is not provided with storage bins, and therefore the bottom of the formed T-branch pipe is compressed, deformed, and then seriously thickened. The die is characterized in that a branch pipe cavity communicated with a main cavity is formed in the top of the main cavity, and two storage bins are arranged at the bottom of the main cavity. The method includes the steps that firstly, the diameter D of the main cavity is determined; secondly, the diameter and the depth of the storage bins are determined; thirdly, a pipe blank is placed in a cavity of a lower die; fourthly, the two ends of the pipe blank are sealed through a first punch and a second punch; fifthly, internal pressure is injected; sixthly, the first punch and the second punch move towards the middle through external force for feed supplement, and extruded materials flow into the storage bins and the branch pipe cavity after the pipe fitting blank bulges; seventhly, the die is opened, and a part is taken out; eighthly, the process section of the part is cut off, and then bent and formed elbow T-branch pipe is obtained. The internal high pressure forming die and method are used for forming of the T-branch pipe.

Metal fuses in semiconductor devices may be formed on the basis of additional mechanisms for obtaining superior electromigration in the fuse bodies. To this end, the compressive stress caused by the current-induced metal diffusion may be restricted or reduced in the fuse body, for instance, by providing a stress buffer region and/or by providing a dedicated metal agglomeration region. The concept may be applied to the metallization system and may also be used in the device level, when fabricating the metal fuse in combination with high-k metal gate electrode structures.

Methods of fabricating semiconductor devices are provided. An NMOS transistor and a PMOS transistor are provided on a substrate. The NMOS transistor is positioned on an NMOS region of the substrate and the PMOS transistor is positioned on a PMOS region of the substrate. A first insulating layer is provided on the NMOS transistor. The first insulating layer has a first compressive stress. A second insulating layer is provided on the PMOS transistor. The second insulating layer has a second compressive stress and a stress relief ratio higher than a stress relief ratio of the first insulating layer. A thermal treatment process is performed on the first insulating layer and the second insulating layer such that the second compressive stress of the second insulating layer is lower than the first compressive stress of the first insulating layer. Related devices are also provided.

By forming a cap layer on a dielectric barrier layer of a low-k dielectric material stack, the interaction of UV radiation during the generation of pores in the low-k dielectric material may be significantly reduced. In some illustrative embodiments, the cap layer may comprise titanium oxide and/or vanadium oxide which may provide a high degree of reflectivity and absorption, respectively. The layer thickness of the cap layer may be 10 nm or significantly less, thereby reducing any adverse influence on the overall performance of the resulting layer stack.

The invention provides a multi-quantum-well structure and a light-emitting diode with the multi-quantum-well structure. The light-emitting area of the light-emitting diode is provided with at least one quantum well structure comprising a first protection layer, a first transitional layer on the first protection layer, a quantum well layer on the first transitional layer, a second transitional layer on the quantum well layer, a second protection layer on the second transitional layer and a quantum base layer on the second protection layer.

The invention discloses a vertical-type spiral particle waste heat recycling device and method for sintering waste heat generation. A device body is sequentially provided with a prestoring segment, a chute segment, a cooling segment and a lower conical segment from top to bottom. The device body is internally provided with an air supply body. The air supply body is a cylinder and is hollow. The top of the air supply body is provided with a pointed cone. The upper portion of the air supply body is provided with four cross-shaped supporting rods. The outer ends of the four supporting rods are fixedly connected with the chute segment. A heat exchange cavity is formed between the air supply body and a tank body of the cooling segment. The outer side of the middle of the air supply body is provided with a spiral discharging channel. The periphery of the upper portion of the spiral discharging channel is connected with the cooling segment. The lower portion of the air supply body is provided with an upward-inclined cross-shaped air channel. The cross-shaped air channel is connected with the lower portion of the lower conical segment. The bottom of the lower conical segment is provided with a bulkhead gate. A closed-type vibrating feeder is arranged below the bulkhead gate. The vertical-type spiral particle waste heat recycling device meets the specific requirement of sintering ore for a cooling device and is high in controllability, the service life of the vertical-type spiral particle waste heat recycling device is prolonged, gas resistance is reduced, flow and temperature uniformity are improved, and the waste heat utilization rate is improved.

A photomask blank has a light-shielding film composed of at least two layers on a transparent substrate. The light-shielding film includes a light-shielding layer made of a material mainly containing tantalum nitride and further containing xenon and a front-surface antireflection layer formed on the light-shielding layer and made of a material mainly containing tantalum oxide and further containing argon.

The present invention is one new kind of short stay rod type tension string truss. The shuttle-shaped truss has serial short stay rods connected rigidly to the nodes in the lower string; shaft bracket with bearing and shaft fixed to the lower ends of the short stay rods, steel cable pressed on the shaft and with two ends fixed to the end seat nodes separately of the shuttle-shaped truss while in its tensile state. There are arced notch in center of the shaft for the steel cable to contact with, and reinforcing boards between the short stay rods and the shuttle-shaped truss and between the short stay rods and the shaft bracket. The short stay rods are 0.3-2.0 m long. The present invention has the advantages of less steel consumption, simple structure, low cost, high performance, easy construction, etc.

A hydrogen permeable structure includes a base material (1) including porous ceramic, and a hydrogen permeable film (2) formed on the base material (1), including palladium (Pd) and at least one element other than palladium and having an amount of hydrogen dissolution at a prescribed temperature smaller than that of palladium alone. The hydrogen permeable film (2) is formed on the surface of the porous ceramic base by a physical vapor deposition technique after any pin holes in the surface of the base have been filled with a porous oxide material.

The present invention provides a semiconductor device includes: an element isolation region configured to be formed in a semiconductor substrate; a P-type field effect transistor configured to be formed in a first element formation region of the semiconductor substrate for which isolation by the element isolation region is carried out; an N-type substrate region configured to be formed in the semiconductor substrate for which isolation by the element isolation region is carried out, arsenic being ion-implanted into the N-type substrate region; a nickel silicide layer configured to be formed on the N-type substrate region; a first insulating film configured to cover the P-type field effect transistor and have compressive stress; and a second insulating film configured to cover the N-type substrate region and have tensile stress or compressive stress lower than the compressive stress of the first insulating film.

The invention relates to a self-contained lower limb walking aid, which consists of waist support frames, thigh support rods, calf support rods, foot support plates, hip joint rotating pairs, knee joint rotating pairs, ankle joint rotating pairs, hip joint driving mechanisms, knee joint driving mechanisms, thigh fastening belts, and calf fastening belts, which are arranged symmetrically left and right. The invention has the advantages that: the self-contained lower limb walking aid has a scientific and reasonable structural design, can assist crural paralysis patients in standing and walking, is stable in operation, reliable in support, easy to manufacture and low in cost, is a walking aid with higher innovativeness, and has wide market prospect.

The invention provides a fused salt for chemically enhancing medium-aluminum and high-aluminum silicate glass. The fused salt comprises the following compositions: KNO3, KOH, KCl and K2CO3, wherein a mass ratio of KOH to K2CO3 in the fused salt is 0.05-0.4; a mass ratio of KCl to K2CO3 is 0.075-1.0; and a mass ratio of KNO3 to K2CO3 is 100:(1.0-4.0). The invention further provides a method for performing chemically toughened enhancement by using the fused salt for chemical enhancing of medium-aluminum and high-aluminum silicate glass. The fused salt formula disclosed by the invention indicates a formula composition range suitable for chemical enhancing of the medium-aluminum and high-aluminum glass. According to the formula, corrosion on the glass surface can be avoided, and the chemically enhanced glass has high transmittance; and meanwhile, due to the formula disclosed by the invention, the surface stress and stress layer depth of the chemically enhanced glass can be greatly improved.