The invention discloses an ultraviolet LED element and a fabricated method of AlGaN base sapphire substrate, relates to the technical field of microelectronics and mainly solves the problem of low emergent light efficiency. The ultraviolet LED element comprises a low-temperature AlN nucleating layer, a high-temperature AlN nucleating layer, an intrinsic AlGaN epitaxial layer, an n-AlGaN barrier layer, an active zone, a p-AlGaN barrier layer, a low Al component p-type AlGaN layer, a p-type GaN cap layer, and a window zone arranged at the p-type GaN cap layer, which are sequentially arranged from top to bottom. The ultraviolet LED element etches the p-AlGaN cap layer until the p-AlGaN with low Al component by a drying method to form the column emergent light window, and then etches the p-AlGaN cap layer until the p-AlGaN with low Al component by a wetting method so as to change the column emergent light window into a similar hemispheric window, can make the material surface of the window be coarsened while increasing the emergent pore diameter of the window, and greatly improves the power and the efficiency of emergent light. The invention has simple process, good repetitiveness and high reliability, and can be used to occasions of water treatment, medical treatment and biomedicine, and the white light illumination.