The invention discloses an AlGaN-based
multiple quantum well uv-LED device based on a
SiC substrate and a manufacturing method, relating to the technical field of micro-
electronics. The device comprises a low-temperature AlN nucleating layer (2), a high-temperature AlN nucleating layer (3), an intrinsic AlGaN epitaxial layer (4), an n-AlGaN
barrier layer (5), an active area (6), a p-AlGaN
barrier layer (7), a low Al component p-shaped AlGaN layer (8), a p-shaped GaN capping layer (9) and a window area (10) arranged on the p-shaped GaN capping layer from bottom to top in sequence. The device etches the p-GaN capping layer to an electronic p-AlGaN
barrier layer by a dry method to form a cylindrical emergent light window which is changed into a conical window by a secondary wet
etching, so that the emergent aperture of the window is enlarged and the spread distance of the emergent light is simultaneously shortened. Due to adopting the method of
etching, the device coarsens the surface of the electronic p-AlGaN barrier layer, thus further improving the emitting efficiency of the emergent light. In addition, the device has simple process, low cost, good
repeatability and high reliability and can be used for
water quality detection, medical probing, biopharming and
white light illumination.