Structure of improving gallium nitride base high electronic mobility transistor property and producing method

Abstract

A structure is for increasing performance of transistors of GaN base high electronic movability includes: a sapphire substrate, a SiC2 substrate or a silicon substrate, a high resistance semi-insulation GaN buffer layer processed on the substrate, a high movability GaN channel layer processed on the buffer layer, a thin ALN plug-in layer processed on the channel layer to increase the integrated performance of the transistor materials of GaN base high electronic movability, a n-type doped or un-purpose doped ALGaN barrier layer processed on the thin ALN plug-in layer.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, in particular to a structure and a manufacturing method for improving the performance of gallium nitride-based high electron mobility transistors (AlGaN / GaN HEMTs). Background technique [0002] The aluminum gallium nitride / gallium nitride (AlGaN / GaN) high electron mobility transistor structure formed by III-V gallium nitride (GaN) and its compound semiconductor materials is used in high-temperature, high-frequency, high-power, radiation-resistant microwave devices and circuits The field has a very important application prospect, mainly because the semiconductor materials that make up the AlGaN / GaN heterostructure have a large band gap, a high breakdown electric field, good chemical stability and strong radiation resistance, and also because GaN materials have high electron saturation drift velocity and peak drift velocity, more importantly because a two-dimensional electron gas with high ...

AI Technical Summary

Problems solved by technology

At present, the most convincing reason for the formation of the current collapse effect of AlGaN / GaN HEMT devices is the virtual gate model, that is, under the radio frequency signal, the channel electrons are captured by the trap center on the surface of the AlGaN barrier layer, resulting in a decrease in the channel electron concentration. decrease, and the surface state captures electrons to form a virtual gate, modulating the channel current, further causing the channel current to decrease, forming a current collapse

Images