Resistive random access memory unit-based logic arithmetic unit and method for realizing binary Boolean logic operation
Patent Information
- Authority / Receiving Office
- CN Β· China
- Current Assignee / Owner
- NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
- Publication Date
- 2018-04-03
Smart Images

Figure 1 
Figure 2 
Figure 3
Abstract
Description
technical field
[0001] The invention relates to the technical field of logic operators, in particular to a logic operator based on a resistive storage unit, and a method for realizing binary Boolean logic operations by using the logic operator. Background technique
[0002] Logic circuits are the core components of current computers for data processing. The logic circuit based on the traditional CMOS process is about to reach its physical limit of miniaturization, and has complex structure, single function and high energy consumption. Therefore, new logic circuits based on new materials, new structures and new devices are receiving increasing attention.
[0003] Resistive memory is a promising next-generation non-volatile memory. It has the advantages of simple structure, easy integration, fast erasing and writing speed, and low operating power consumption, which makes the logic circuit based on resistive memory better than the traditional one in terms of comprehensive perf...