Resistive random access memory unit-based logic arithmetic unit and method for realizing binary Boolean logic operation

A technology of resistive memory and logic operation, applied in the field of logic operators, can solve problems such as hindering the practical process of resistive memory base logic circuit
CN107871518AActive Publication Date: 2018-04-03NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI

Patent Information

Authority / Receiving Office
CN Β· China
Current Assignee / Owner
NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
Publication Date
2018-04-03

Smart Images

  • Figure 1
    Figure 1
  • Figure 2
    Figure 2
  • Figure 3
    Figure 3
Patent Text Reader

Abstract

The invention provides a resistive random access memory unit-based logic arithmetic unit. The logic arithmetic unit is formed by connecting a resistive random access memory unit and a switch in series. The logic arithmetic unit is simple in structure, skillful in design and low in fabrication cost; by designing logic operation rules, all 16 binary Boolean logic operations can be finished under thecondition of not exceeding three writing operations; and logic operation results can be automatically and nonvolatilely stored in the resistive random access memory unit, so that data processing andstorage functions can be integrated, a practical process of a resistive random access memory base logic circuit can be greatly promoted, and the logic arithmetic unit is of important significance fordevelopment of the resistive random access memory base logic circuit.
Need to check novelty before this filing date? Find Prior Art

Description

technical field

[0001] The invention relates to the technical field of logic operators, in particular to a logic operator based on a resistive storage unit, and a method for realizing binary Boolean logic operations by using the logic operator. Background technique

[0002] Logic circuits are the core components of current computers for data processing. The logic circuit based on the traditional CMOS process is about to reach its physical limit of miniaturization, and has complex structure, single function and high energy consumption. Therefore, new logic circuits based on new materials, new structures and new devices are receiving increasing attention.

[0003] Resistive memory is a promising next-generation non-volatile memory. It has the advantages of simple structure, easy integration, fast erasing and writing speed, and low operating power consumption, which makes the logic circuit based on resistive memory better than the traditional one in terms of comprehensive perf...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More