Resistive random access memory unit-based logic arithmetic unit and method for realizing binary Boolean logic operation
A technology of resistive memory and logic operation, applied in the field of logic operators, can solve problems such as hindering the practical process of resistive memory base logic circuit
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[0080] In this embodiment, the resistive memory unit includes a first electrode ( T1 ), a second electrode ( T2 ) and an intermediate layer, and the intermediate layer is located between T1 and T2 . T1 material is Ta, T2 material is Pt, middle layer material is Ta 2 o 5 , forming Ta / Ta 2 o 5 / Pt three-layer film device, its preparation process is as follows:
[0081] First, the Pt(120nm) / Ti / SiO 2 / Si substrate deposited 10nm thick Ta 2 o 5 film. During the deposition process, a small part of the substrate needs to be shielded so that this part is not covered by Ta 2 o 5 Covered with a thin film, it is reserved for subsequent testing as a second electrode.
[0082] Secondly, in Ta 2 o 5 A layer of photoresist is spin-coated on the film, and combined with ultraviolet exposure and development processes, multiple holes with a diameter of 50 μm are obtained on the photoresist layer.
[0083] Finally, a 60nm-thick Ta film was deposited by DC magnetron sputtering, and the...
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