Resistive random access memory unit-based logic arithmetic unit and method for realizing binary Boolean logic operation

A technology of resistive memory and logic operation, applied in the field of logic operators, can solve problems such as hindering the practical process of resistive memory base logic circuit

Active Publication Date: 2018-04-03
NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Although a universal method to implement some binary logic operations based on a single resistive memory cell operated with dual voltage polarity has been proposed and proved, there is no method to impl

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  • Resistive random access memory unit-based logic arithmetic unit and method for realizing binary Boolean logic operation
  • Resistive random access memory unit-based logic arithmetic unit and method for realizing binary Boolean logic operation
  • Resistive random access memory unit-based logic arithmetic unit and method for realizing binary Boolean logic operation

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Embodiment 1

[0080] In this embodiment, the resistive memory unit includes a first electrode ( T1 ), a second electrode ( T2 ) and an intermediate layer, and the intermediate layer is located between T1 and T2 . T1 material is Ta, T2 material is Pt, middle layer material is Ta 2 o 5 , forming Ta / Ta 2 o 5 / Pt three-layer film device, its preparation process is as follows:

[0081] First, the Pt(120nm) / Ti / SiO 2 / Si substrate deposited 10nm thick Ta 2 o 5 film. During the deposition process, a small part of the substrate needs to be shielded so that this part is not covered by Ta 2 o 5 Covered with a thin film, it is reserved for subsequent testing as a second electrode.

[0082] Secondly, in Ta 2 o 5 A layer of photoresist is spin-coated on the film, and combined with ultraviolet exposure and development processes, multiple holes with a diameter of 50 μm are obtained on the photoresist layer.

[0083] Finally, a 60nm-thick Ta film was deposited by DC magnetron sputtering, and the...

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Abstract

The invention provides a resistive random access memory unit-based logic arithmetic unit. The logic arithmetic unit is formed by connecting a resistive random access memory unit and a switch in series. The logic arithmetic unit is simple in structure, skillful in design and low in fabrication cost; by designing logic operation rules, all 16 binary Boolean logic operations can be finished under thecondition of not exceeding three writing operations; and logic operation results can be automatically and nonvolatilely stored in the resistive random access memory unit, so that data processing andstorage functions can be integrated, a practical process of a resistive random access memory base logic circuit can be greatly promoted, and the logic arithmetic unit is of important significance fordevelopment of the resistive random access memory base logic circuit.

Description

technical field [0001] The invention relates to the technical field of logic operators, in particular to a logic operator based on a resistive storage unit, and a method for realizing binary Boolean logic operations by using the logic operator. Background technique [0002] Logic circuits are the core components of current computers for data processing. The logic circuit based on the traditional CMOS process is about to reach its physical limit of miniaturization, and has complex structure, single function and high energy consumption. Therefore, new logic circuits based on new materials, new structures and new devices are receiving increasing attention. [0003] Resistive memory is a promising next-generation non-volatile memory. It has the advantages of simple structure, easy integration, fast erasing and writing speed, and low operating power consumption, which makes the logic circuit based on resistive memory better than the traditional one in terms of comprehensive perf...

Claims

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Application Information

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IPC IPC(8): G11C13/00H03K19/20
CPCG11C13/0007H03K19/20
Inventor 高双李润伟刘钢
Owner NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
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