AlGaN-based multiple quantum well uv-LED device based on sapphire substrate and manufacturing method

Abstract

The invention discloses an AlGaN-based uv-LED device based on a sapphire substrate and a manufacturing method, relating to the technical field of micro-electronics. The device comprises a low-temperature AlN nucleating layer (2), a high-temperature AlN nucleating layer (3), an intrinsic AlGaN epitaxial layer (4), an n-AlGaN barrier layer (5), an active area (6), a p-AlGaN barrier layer (7), a low Al component p-shaped AlGaN layer (8), a p-shaped GaN capping layer (9) and a window area (10) arranged on the p-shaped GaN capping layer from bottom to top in sequence. The device etches the p-GaN capping layer to an electronic p-AlGaN barrier layer by a dry method to form a cylindrical emergent light window which is changed into a conical window by secondary wet etching, so that the emergent aperture of the window is enlarged and the spread distance of the emergent light is simultaneously shortened. Due to adopting the method of etching, the device coarsens the surface of the electronic p-AlGaN barrier layer, thus further improving the emitting efficiency of the emergent light. The device also has simple process, low cost, good repeatability and high reliability and can be used for water processing, medical treatment, biomedicine occasion and white light illumination.

Description

technical field [0001] The invention belongs to the technical field of microelectronics and relates to a semiconductor device, in particular to a method for realizing a novel AlGaN-based multi-quantum well uv-LED device, which can be used in the fields of water treatment, medical treatment, biomedicine and white light illumination. Background technique [0002] As an outstanding representative of the third-generation semiconductor materials, III-V compound semiconductor materials have many excellent characteristics, especially in optical applications. The alloy {Ga(Al,In)N} composed of Ga, Al, In, N Can cover the entire visible light region and near ultraviolet light region. Moreover, the group III nitrides with wurtzite structure have direct band gaps, which are very suitable for the application of optoelectronic devices. Especially in the ultraviolet region, the AlGaN-based multi-quantum well uv-LED has shown great advantages, and has become one of the hot spots in the de...

AI Technical Summary

Problems solved by technology

In 2004, a 250nm LED was produced. The maximum power of a 200μ×200μ chip is close to 0.6mW, but the external quantum efficiency is only 0.01%.

As the emission wavelength decreases, the bottom buffer layer absorbs more and more ultraviolet light, which seriously affects the output light power and external quantum efficiency.

At present, it is mainly to change the structure of the p-type electrode and the structure of the device. The existing technology for emitting light from the bottom still has great shortcomings. The quantum efficiency is too low; the second is that the crystal quality of the AlN buffer layer at the bottom is poor, resulting in an increase in the non-radiative recombination centers of the material and more absorption of ultraviolet light; the third is that the shape of the p-type electrode is relatively complicated, which often requires more technical requirements. High, which poses a problem for the repeatability of this process

Fourth, the complex electrode structure results in a higher turn-on voltage

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