Structure of improving gallium nitride base high electronic mobility transistor property and producing method

Abstract

A structure is for increasing performance of transistors of GaN base high electronic movability includes: a sapphire substrate, a SiC2 substrate or a silicon substrate, a high resistance semi-insulation GaN buffer layer processed on the substrate, a high movability GaN channel layer processed on the buffer layer, a thin ALN plug-in layer processed on the channel layer to increase the integrated performance of the transistor materials of GaN base high electronic movability, a n-type doped or un-purpose doped ALGaN barrier layer processed on the thin ALN plug-in layer.

Description

technical field

[0001] The invention belongs to the technical field of semiconductors, in particular to a structure and a manufacturing method for improving the performance of gallium nitride-based high electron mobility transistors (AlGaN / GaN HEMTs). Background technique

[0002] The aluminum gallium nitride / gallium nitride (AlGaN / GaN) high electron mobility transistor structure formed by III-V gallium nitride (GaN) and its compound semiconductor materials is used in high-temperature, high-frequency, high-power, radiation-resistant microwave devices and circuits The field has a very important application prospect, mainly because the semiconductor materials that make up the AlGaN / GaN heterostructure have a large band gap, a high breakdown electric field, good chemical stability and strong radiation resistance, and also because GaN materials have high electron saturation drift velocity and peak drift velocity, more importantly because a two-dimensional electron gas with high ...

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